Vishay SST111, SST112, SST113, J111, J112 Schematics
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PRODUCT SUMMARY
J/SST111 Series
Vishay Siliconix
N-Channel JFETs
J111 SST111
J112 SST112
J113 SST113
Part Number V
J/SST111
J/SST112 –1 to –5 50 5 4
J/SST113 v–3 100 5 4
(V)
r
GS(off)
–3 to –10 30 5 4
DS(on)
Max (W)
I
Typ (pA) tON Typ (ns)
D(off)
FEATURES BENEFITS APPLICATIONS
D Low On-Resistance: 111 < 30 W
D Fast Switching—tON: 4 ns
D Low Leakage: 5 pA
D Low Capacitance: 3 pF
D Low Insertion Loss
D Low Error Voltage
D High-Speed Analog Circuit Performance
D Negligible “Off-Error,” Excellent Accuracy
D Good Frequency Response, Low Glitches
D Eliminates Additional Buffering
D Analog Switches
D Choppers
D Sample-and-Hold
D Normally “On” Switches
D Current Limiters
DESCRIPTION
The J/SST111 series consists of all-purpose analog switches
designed to support a wide range of applications. The
J/SST113 are useful in a high-gain amplifier mode.
The J series, TO-226AA (TO-92) plastic package, provides
low cost, while the SST series, TO236 (SOT-23) package,
provides surface-mount capability. Both the J and SST series
are available in tape-and-reel for automated assembly (see
Packaging Information).
TO-226AA (TO-92)
For similar products in TO-206AA(TO-18) packaging, see the
2N/PN/SST4391 series, 2N4856A/4857A/4858A, and
2N5564/5565/5566 (duals) data sheets.
TO-236 (SOT-23)
D
S
G
1
2
3
Top View
J111
J112
J113
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage –35 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (
Storage Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . .
For applications information see AN105.
Document Number: 70232
S-04028—Rev. E, 04-Jun-01
1
/16” from case for 10 seconds) 300 _C. . . . . . . . . . . . . .
D
1
G
3
S
2
Top View
SST111 (C1)*
SST112 (C2)*
SST113 (C3)*
*Marking Code for TO-236
Power Dissipation
(TO-236) 350 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(TO-226AA) 360 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a. Derate 2.8 mW/_C above 25_C
a
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7-1
J/SST111 Series
-10
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Conditions TypaMin Max Min Max Min Max Unit
Static
J/SST111
Limits
J/SST112 J/SST113
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage V
Saturation Drain Current
Gate Reverse Current I
Gate Operating Current I
Drain Cutoff Current I
Drain-Source On-Resistance r
Gate-Source Forward Voltage V
b
V
(BR)GSS
Dynamic
Common-Source Forward
Transconductance
Common-Source
Output Conductance
Drain-Source On-Resistance r
Common-Source
Input Capacitance
Common-Source Reverse Transfer
Capacitance
Equivalent Input
Noise Voltage
GS(off)
I
DSS
GSS
G
D(off)
DS(on)
GS(F)
g
fs
g
os
ds(on)
C
iss
C
rss
e
n
IG = –1 mA , VDS = 0 V
VDS = 5 V, ID = 1 mA –3
VDS = 15 V, VGS = 0 V 20 5 2 mA
VGS = –15 V, VDS = 0 V –0.005 –1 –1 –1
TA = 125_C
VDG = 15 V, ID = 10 mA –5 pA
VDS = 5 V, VGS = –10 V 0.005 1 1 1
TA = 125_C
VGS = 0 V, VDS = 0.1 V 30 50 100
IG = 1 mA , VDS = 0 V 0.7 V
VDS = 20 V, ID = 1 mA
VDS = 20 V, ID = 1 mA
f = 1 kHz
VGS = 0 V, ID = 0 mA
f = 1 kHz
VDS = 0 V, VGS = -10 V
VDS = 0 V, VGS =
f = 1 MHz
VDG = 10 V, ID = 1 mA
f = 1 kHz
V
–55
–35 –35 –35
–10 –1 –5 –3
–3
3
6 mS
25
30 50 100
7 12 12 12
3 5 5 5
3
V
V
nA
nA
W
mS
W
pF
nV⁄
√Hz
Switching
t
Turn-On Time
Turn-Off Time
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NCB
b. Pulse test: PW v300 ms duty cycle v3%.
www.vishay.com
7-2
d(on)
t
d(off)
t
r
t
f
VDD = 10 V, V
VDD = 10 V, V
See Switching Circuit
GS(H)
GS(H)
= 0 V
= 0 V
2
2
6
15
Document Number: 70232
S-04028—Rev. E, 04-Jun-01
ns
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