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J107

Datasheet J106, J105, J107 Datasheet (VISHAY)

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PRODUCT SUMMARY
J105/106/107
Vishay Siliconix
N-Channel JFETs
J105 –4.5 to –10 3 10 14 J106 –2 to –6 6 10 14 J107 –0.5 to –4.5 8 10 14
GS(off)
(V)
r
DS(on)
Max ()
I
Typ (pA) tON Typ (ns)
D(off)
FEATURES BENEFITS APPLICATIONS
D Low On-Resistance: J105 < 3 D Fast Switching—tON: 14 ns D Low Leakage: 10 pA D Low Capacitance: 20 pF D Low Insertion Loss
D Low Error Voltage D High-Speed Analog Circuit Performance D Negligible “Off-Error,” Excellent Accuracy D Good Frequency Response D Eliminates Additional Buffering
D Analog Switches D Choppers D Sample-and-Hold D Normally “On” Switches D Current Limiters
DESCRIPTION
The J105/106/107 are high-performance JFET analog switches designed to offer low on-resistance and fast switching. r
<3 is guaranteed for the J105 making this
DS(on)
device the lowest of any commercially available JFET.
The low cost TO-226AA (TO-92) plastic package is available in a wide range of tape-and-reel options (see Packaging Information). For similar products in TO-206AC (TO-52) packaging, see the U290/291 data sheet.
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage –25 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . .
Document Number: 70230 S-04028—Rev. D, 04-Jun-01
D
S
G
TO-226AA
(TO-92)
1
2
3
Top View
Power Dissipation
Notes a. Derate 2.8 mW/_C above 25_C
a
350 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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7-1
J105/106/107
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Conditions TypaMin Max Min Max Min Max Unit
Static
Limits
J105 J106 J107
Gate-Source Breakdown Voltage
V
Gate-Source Cutoff Voltage V Saturation Drain Current
b
Gate Reverse Current I
Gate Operating Current
b
Drain Cutoff Current I
Drain-Source On-Resistance r Gate-Source Forward Voltage V
Dynamic
Common-Source Forward Transconductance
Common-Source Output Conductance
Drain-Source On-Resistance r
Common-Source Input Capacitance
Common-Source Reverse Transfer Capacitance
Equivalent Input Noise Voltage
b
b
(BR)GSS
GS(off)
I
DSS
GSS
I
G
D(off)
DS(on)
GS(F)
g
fs
g
os
ds(on)
C
iss
C
rss
e
n
IG = –1 A , VDS = 0 V
VDS = 5 V, ID = 1 A
–35 –25 –25 –25
–4.5 –10 –2 –6 –0.5 –4.5
VDS = 15 V, VGS = 0 V 500 200 100 mA
VGS = –15 V, VDS = 0 V –0.02 –3 –3 –3
TA = 125_C
–10 VDG = 10 V, ID = 25 mA –0.01 VDS = 5 V, VGS = –10 V 0.01 3 3 3
TA = 125_C
5
VGS = 0 V, ID = 1 mA 3 6 8
IG = 1 mA , VDS = 0 V 0.7 V
55
VDS = 10 V, ID = 25 mA
VDS = 10 V, ID = 25 mA
f = 1 kHz
VGS = 0 V, ID = 0 mA
f = 1 kHz
VDS = 0 V, VGS = 0 V
f = 1 MHz
VDS = 0 V, VGS = –10 V
f = 1 MHz
VDG = 10 V, ID = 25 mA
f = 1 kHz
5
3 6 8
120 160 160 160
20 35 35 35
3
V
V
nA
mS
pF
nV⁄
√Hz
Switching
t
Turn-On Time
Turn-Off Time
Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NVA b. Pulse test: PW v300 s duty cycle v3%.
d(on)
t
d(off)
t
r
t
f
VDD = 1.5 V, V
VDD = 1.5 V, V
See Switching Diagram
GS(H)
GS(H)
= 0 V
= 0 V
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7-2
6 8 5
ns
9
Document Number: 70230
S-04028—Rev. D, 04-Jun-01
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Drain Current
10
8
6 1.2
rDS @ ID = 10 mA, VGS = 0 V
@ VDS = 10 V, VGS = 0 V
I
DSS
r
DS
I
DSS
vs. Gate-Source Cutoff Voltage
2 .0
I
DSS
1.6 – Saturation Drain Current (mA)
20
16
12
On-Resistance vs. Drain Current
TA = 25_C
V
= –3 V
GS(off)
J105/106/107
Vishay Siliconix
4
– Drain-Source On-Resistance ( Ω )r
2
DS(on)
r
0
0 –6 –8 –10–2
10
V
GS(off)
On-Resistance vs. Temperature Output Characteristics
I
= 10 mA
D
r
changes X 0.7%/_C
DS
–4
– Gate-Source Cutoff Voltage (V) ID – Drain Current (mA)
8
– Drain-Source On-Resistance ( Ω )
DS(on)
6
4
2
V
GS(off)
= –3 V
–5 V
0
–55 25 125–15 85
–35 5 45 65 105
– Temperature (_C)
T
A
–8 V
0.8
0.4
0
8
– Drain-Source On-Resistance ( Ω )
DS(on)
r
4
–5 V
0
10 100 1000
500
V
= –5 V
GS(off)
400
300
200
– Drain Current (mA)
D
I
100
0
4
– Drain-Source Voltage (V)
V
DS
68210
–8 V
VGS= 0 V
–0.5 V
–1.0 V
–1.5 V
–2.0 V –2.5 V
–3.0 V
tr approximately independent of I VDD = 1.5 V, RG = 50
= –10 V
V
GS(L)
8
Switching Time (ns)
4
t
@ ID = 10 mA
d(on)
0
0 –8–4–2 –10
V
GS(off)
Document Number: 70230 S-04028—Rev. D, 04-Jun-01
Turn-On Switching Turn-Off Switching
D
20
t
independent of device V
d(off)
V
= 1.5 V, V
DD
GS(L)
= –10 V
GS(off
16
t
r
t
@ ID = 30 mA
d(on)
12
8
t
Switching Time (ns)
f
V
GS(off)
4
V
= –8 V
GS(off)
0
–6
– Gate-Source Cutoff Voltage (V) ID – Drain Current (mA)
0304010 50
20
)
t
d(off)
= –3 V
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7-3
J105/106/107
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
C (pF)
150
120
Capacitance vs. Gate-Source Voltage Transconductance vs. Drain Current
VDS = 0 V f = 1 MHz
90
C
iss
60
C
rss
30
0
0 –12 –16–8–4 –20
VGS – Gate-Source Voltage (V) ID – Drain Current (mA)
Output Conductance vs. Drain Current Noise Voltage vs. Frequency
20
V
V
= –5 V
GS(off)
10
TA = –55_C
1
125_C
= 10 V
DS
f = 1 kHz
25_C
200
V
GS(off)
100
TA = –55_C
10
– Forward Transconductance (mS)
fs
g
1
1 10 100
100
VDG = 10 V
)(– Noise Voltage
√
⁄ Hz
nVe
10
= –5 V
125_C
ID = 10 mA
VDS = 10 V f = 1 kHz
25_C
– Output Conductance (mS)g
os
g
0.1 1 10 100 10 100 1 k 100 k10 k
– Drain Current (mA) f – Frequency (Hz)
I
D
n
1
Forward Transconductance and Output Conductance
300
260
220
180
140
– Forward Transconductance (mS)
fs
100
vs. Gate-Source Cutoff Voltage
gfs and gos @ V
= 0 V, f = 1 kHz
V
GS
0 –6
V
GS(off)
30
= 10 V
DS
g
os
24
– Output Conductance (mS)gos – Output Conductance (mS)
g
fs
g
os
–8 –10–4–2
– Gate-Source Cutoff Voltage (V) VDG – Drain-Gate Voltage (V)
18
12
6
0
100 nA
10 nA
1 nA
100 pA
– Gate Leakage
G
I
10 pA
1 pA
TA = 125_C
TA = 25_C
012168420
Gate Leakage Current
I
@ 25_C
GSS
I
100 mA
@ 125_C
GSS
100 mA
25 mA
25 mA
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7-4
Document Number: 70230
S-04028—Rev. D, 04-Jun-01
SWITCHING TIME TEST CIRCUIT
J105/106/107
Vishay Siliconix
V
DD
J105 J106 J107
V
GS(L)
*
R
L
I
D(on)
*Non-inductive
–12V –7V –5V
     
28 mA 27 mA 26 mA
Input Pulse Sampling Scope
Rise Time < 1 ns Fall Time < 1 ns Pulse Width 100 ns PRF 1 MHz
Rise Time 0.4 ns Input Resistance 10 M Input Capacitance 1.5 pF
V
V
GS(H)
GS(L)
V
IN
Scope
1 k
51
51
R
L
OUT
Document Number: 70230 S-04028—Rev. D, 04-Jun-01
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7-5
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