VISHAY J106, J105, J107 Datasheet

PRODUCT SUMMARY
J105/106/107
Vishay Siliconix
N-Channel JFETs
J105 –4.5 to –10 3 10 14 J106 –2 to –6 6 10 14 J107 –0.5 to –4.5 8 10 14
GS(off)
(V)
r
DS(on)
Max ()
I
Typ (pA) tON Typ (ns)
D(off)
FEATURES BENEFITS APPLICATIONS
D Low On-Resistance: J105 < 3 D Fast Switching—tON: 14 ns D Low Leakage: 10 pA D Low Capacitance: 20 pF D Low Insertion Loss
D Low Error Voltage D High-Speed Analog Circuit Performance D Negligible “Off-Error,” Excellent Accuracy D Good Frequency Response D Eliminates Additional Buffering
D Analog Switches D Choppers D Sample-and-Hold D Normally “On” Switches D Current Limiters
DESCRIPTION
The J105/106/107 are high-performance JFET analog switches designed to offer low on-resistance and fast switching. r
<3 is guaranteed for the J105 making this
DS(on)
device the lowest of any commercially available JFET.
The low cost TO-226AA (TO-92) plastic package is available in a wide range of tape-and-reel options (see Packaging Information). For similar products in TO-206AC (TO-52) packaging, see the U290/291 data sheet.
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage –25 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . .
Document Number: 70230 S-04028—Rev. D, 04-Jun-01
D
S
G
TO-226AA
(TO-92)
1
2
3
Top View
Power Dissipation
Notes a. Derate 2.8 mW/_C above 25_C
a
350 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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7-1
J105/106/107
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Conditions TypaMin Max Min Max Min Max Unit
Static
Limits
J105 J106 J107
Gate-Source Breakdown Voltage
V
Gate-Source Cutoff Voltage V Saturation Drain Current
b
Gate Reverse Current I
Gate Operating Current
b
Drain Cutoff Current I
Drain-Source On-Resistance r Gate-Source Forward Voltage V
Dynamic
Common-Source Forward Transconductance
Common-Source Output Conductance
Drain-Source On-Resistance r
Common-Source Input Capacitance
Common-Source Reverse Transfer Capacitance
Equivalent Input Noise Voltage
b
b
(BR)GSS
GS(off)
I
DSS
GSS
I
G
D(off)
DS(on)
GS(F)
g
fs
g
os
ds(on)
C
iss
C
rss
e
n
IG = –1 A , VDS = 0 V
VDS = 5 V, ID = 1 A
35 25 25 25
4.5 10 2 6 0.5 4.5
VDS = 15 V, VGS = 0 V 500 200 100 mA
VGS = –15 V, VDS = 0 V –0.02 –3 –3 –3
TA = 125_C
–10 VDG = 10 V, ID = 25 mA –0.01 VDS = 5 V, VGS = –10 V 0.01 3 3 3
TA = 125_C
5
VGS = 0 V, ID = 1 mA 3 6 8
IG = 1 mA , VDS = 0 V 0.7 V
55
VDS = 10 V, ID = 25 mA
VDS = 10 V, ID = 25 mA
f = 1 kHz
VGS = 0 V, ID = 0 mA
f = 1 kHz
VDS = 0 V, VGS = 0 V
f = 1 MHz
VDS = 0 V, VGS = –10 V
f = 1 MHz
VDG = 10 V, ID = 25 mA
f = 1 kHz
5
3 6 8
120 160 160 160
20 35 35 35
3
V
V
nA
mS
pF
nV
Hz
Switching
t
Turn-On Time
Turn-Off Time
Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NVA b. Pulse test: PW v300 s duty cycle v3%.
d(on)
t
d(off)
t
r
t
f
VDD = 1.5 V, V
VDD = 1.5 V, V
See Switching Diagram
GS(H)
GS(H)
= 0 V
= 0 V
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7-2
6 8 5
ns
9
Document Number: 70230
S-04028Rev. D, 04-Jun-01
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