Vishay IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Data Sheet
www.vishay.com
D2PAK (TO-263)
G
D
S
I2PAK (TO-262)
G
D
S
Available
Available
IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) 60
R
()V
DS(on)
Q
max. (nC) 35
g
Q
(nC) 7.1
gs
Q
(nC) 25
gd
Configuration Single
= 5 V 0.05
GS
G
N-Channel MOSFET
FEATURES
• Advanced process technology
• Surface mount (IRLZ34S, SiHLZ34S)
• Low-profile through-hole (IRLZ34L, SiHLZ34L)
• 175 °C operating temperature
• Fast switching
• Fully avalanche rated
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
D
Note
*
Thi s datasheet pro vi des information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
S
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are known for, provides the designer with
an extremely efficient and reliable device for use in a wide
variety of applications.
The D2PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application.
The through-hole version (IRLZ34L, SiHLZ34L) is available
for low-profile applications.
ORDERING INFORMATION
Package D2PAK (TO-263) I2PAK (TO-262)
Lead (Pb)-free and Halogen-free SiHLZ34S-GE3 -
Lead (Pb)-free IRLZ34SPbF IRLZ34LPbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
GS
at 5 V
C
= 100 °C 21
C
DS
± 10
GS
I
D
IDM 110
Linear Derating Factor 0.59 W/°C
Single Pulse Avalanche Energy
Maximum Power Dissipation T
Maximum Power Dissipation (PCB mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak temperature)
b
= 25 °C
e
c
d
C
TA = 25 °C 3.7
for 10 s 300
E
AS
P
D
dV/dt 4.5 V/ns
, T
J
stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 25 V, Starting TJ = 25 °C, L = 285 μH, Rg = 25 , IAS = 30 A (see fig. 12).
DD
c. I
30 A, dI/dt 200 A/μs, VDD VDS, TJ 175 °C.
SD
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
S16-0015-Rev. E, 18-Jan-16
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: hvm@vishay.com
1
60
30
128 mJ
88
-55 to +175
Document Number: 90418
V
AT
W
°C
IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L
www.vishay.com
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Maximum Junction-to-Ambient
(PCB mount)
a
Maximum Junction-to-Case (Drain) R
R
thJA
thJC
--40
--1.7
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.07 - V/°C
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
DS
GS(th)
V
GSS
DSS
DS(on)
fs
V
V
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Source Inductance L
iss
- 660 -
oss
- 170 -
rss
g
--7.1
gs
--25
gd
d(on)
r
-30-
d(off)
-56-
f
S
V
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
I
SM
SD
rr
rr
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IF = 30 A, dI/dt = 100 A/μs
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
VGS = 0, ID = 250 μA 60 - - V
VDS = VGS, ID = 250 μA 1.0 - 2.0 V
= ± 10 V - - ± 100 nA
GS
VDS = 60 V, VGS = 0 V - - 25
= 48 V, VGS = 0 V, TJ = 150 °C - - 250
V
DS
= 5 V ID = 18 A
GS
= 4 V ID = 15 A
GS
b
b
VDS = 25 V, ID = 18 A 12 - - S
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
= 30 A, VDS = 48 V,
I
= 5 V
GS
V
R
= 6 , RD = 1 , see fig. 10
g
D
see fig. 6 and 13
= 30 V, ID = 30 A,
DD
b
b
Between lead,
and center of die contact
D
G
S
TJ = 25 °C, IS = 30 A, VGS = 0 V
b
b
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Vishay Siliconix
°C/W
- - 0.05
- - 0.07
- 1600 -
--35
-14-
- 170 -
-7.5-nH
--30
--110
--1.6V
- 120 180 ns
- 700 1300 nC
μA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
A
S16-0015-Rev. E, 18-Jan-16
2
Document Number: 90418
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, T
= 175 °C
C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
S16-0015-Rev. E, 18-Jan-16
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
Document Number: 90418
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