www.vishay.com
D2PAK (TO-263)
G
D
S
I2PAK (TO-262)
G
D
S
Available
Available
IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) 60
R
()V
DS(on)
Q
max. (nC) 35
g
Q
(nC) 7.1
gs
Q
(nC) 25
gd
Configuration Single
= 5 V 0.05
GS
G
N-Channel MOSFET
FEATURES
• Advanced process technology
• Surface mount (IRLZ34S, SiHLZ34S)
• Low-profile through-hole (IRLZ34L, SiHLZ34L)
• 175 °C operating temperature
• Fast switching
• Fully avalanche rated
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
D
Note
*
Thi s datasheet pro vi des information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
S
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are known for, provides the designer with
an extremely efficient and reliable device for use in a wide
variety of applications.
The D2PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application.
The through-hole version (IRLZ34L, SiHLZ34L) is available
for low-profile applications.
ORDERING INFORMATION
Package D2PAK (TO-263) I2PAK (TO-262)
Lead (Pb)-free and Halogen-free SiHLZ34S-GE3 -
Lead (Pb)-free IRLZ34SPbF IRLZ34LPbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
GS
at 5 V
C
= 100 °C 21
C
DS
± 10
GS
I
D
IDM 110
Linear Derating Factor 0.59 W/°C
Single Pulse Avalanche Energy
Maximum Power Dissipation T
Maximum Power Dissipation (PCB mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak temperature)
b
= 25 °C
e
c
d
C
TA = 25 °C 3.7
for 10 s 300
E
AS
P
D
dV/dt 4.5 V/ns
, T
J
stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 25 V, Starting TJ = 25 °C, L = 285 μH, Rg = 25 , IAS = 30 A (see fig. 12).
DD
c. I
30 A, dI/dt 200 A/μs, VDD VDS, TJ 175 °C.
SD
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
S16-0015-Rev. E, 18-Jan-16
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: hvm@vishay.com
1
60
30
128 mJ
88
-55 to +175
Document Number: 90418
V
AT
W
°C
IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L
www.vishay.com
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Maximum Junction-to-Ambient
(PCB mount)
a
Maximum Junction-to-Case (Drain) R
R
thJA
thJC
--40
--1.7
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.07 - V/°C
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
DS
GS(th)
V
GSS
DSS
DS(on)
fs
V
V
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Source Inductance L
iss
- 660 -
oss
- 170 -
rss
g
--7.1
gs
--25
gd
d(on)
r
-30-
d(off)
-56-
f
S
V
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
I
SM
SD
rr
rr
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IF = 30 A, dI/dt = 100 A/μs
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
VGS = 0, ID = 250 μA 60 - - V
VDS = VGS, ID = 250 μA 1.0 - 2.0 V
= ± 10 V - - ± 100 nA
GS
VDS = 60 V, VGS = 0 V - - 25
= 48 V, VGS = 0 V, TJ = 150 °C - - 250
V
DS
= 5 V ID = 18 A
GS
= 4 V ID = 15 A
GS
b
b
VDS = 25 V, ID = 18 A 12 - - S
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
= 30 A, VDS = 48 V,
I
= 5 V
GS
V
R
= 6 , RD = 1 , see fig. 10
g
D
see fig. 6 and 13
= 30 V, ID = 30 A,
DD
b
b
Between lead,
and center of die contact
D
G
S
TJ = 25 °C, IS = 30 A, VGS = 0 V
b
b
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Vishay Siliconix
°C/W
- - 0.05
- - 0.07
- 1600 -
--35
-14-
- 170 -
-7.5-nH
--30
--110
--1.6V
- 120 180 ns
- 700 1300 nC
μA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
A
S16-0015-Rev. E, 18-Jan-16
2
Document Number: 90418
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, T
= 175 °C
C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
S16-0015-Rev. E, 18-Jan-16
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
Document Number: 90418
www.vishay.com
IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
S16-0015-Rev. E, 18-Jan-16
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
4
Document Number: 90418
IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
R
D
V
GS
R
g
D.U.T.
5 V
+
-
V
DS
V
DD
www.vishay.com
Fig. 9 - Maximum Drain Current vs. Case Temperature
Vishay Siliconix
Fig. 10a - Switching Time Test Circuit
V
DS
90 %
10 %
V
GS
t
t
d(on)
r
Fig. 10b - Switching Time Waveforms
t
d(off)
t
f
S16-0015-Rev. E, 18-Jan-16
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
Document Number: 90418
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L
R
g
I
AS
0.01 W
t
p
D.U.T.
L
V
DS
+
-
V
DD
5 V
Var y t
p
to obtain
required I
AS
www.vishay.com
t
p
V
DS
I
AS
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
Vishay Siliconix
V
DS
V
DD
5 V
V
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
S16-0015-Rev. E, 18-Jan-16
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
G
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
Q
G
Q
GS
Q
GD
12 V
V
GS
50 kΩ
0.2 µF
3 mA
Charge
6
Current sampling resistors
For technical questions, contact: hvm@vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
0.3 µF
+
V
D.U.T.
I
G
I
DS
-
D
Document Number: 90418
www.vishay.com
P.W.
Period
dI/dt
Diode recovery
dV/dt
Ripple ≤ 5 %
Body diode forward drop
Re-applied
voltage
Reverse
recovery
current
Body diode forward
current
V
GS
= 10 Va
I
SD
Driver gate drive
D.U.T. l
SD
waveform
D.U.T. V
DS
waveform
Inductor current
D =
P.W.
Period
+
-
+
+
+
-
-
-
Peak Diode Recovery dV/dt Test Circuit
V
DD
• dV/dt controlled by R
g
• Driver same type as D.U.T.
•
I
SD
controlled by duty factor “D”
• D.U.T. - device under test
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
R
g
Note
a. V
GS
= 5 V for logic level devices
V
DD
IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L
Vishay Siliconix
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?90418
S16-0015-Rev. E, 18-Jan-16
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
.
7
For technical questions, contact: hvm@vishay.com
Document Number: 90418
I2PAK (TO-262) (HIGH VOLTAGE)
(Datum A)
E
L1
Package Information
Vishay Siliconix
A
A
B
c2
A
E
D
L2
0.010 A B
Lead tip
B
2 x e
M
Seating
plane
C
C
B
M
3 x b2
3 x b
L
A1
A
E1
Section A - A
Plating
c
b1, b3
(b, b2)
Section B - B and C - C
Scale: None
c
D1
Base
metal
c1
MILLIMETERS INCHES MILLIMETERS INCHES
DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D 8.38 9.65 0.330 0.380
A1 2.03 3.02 0.080 0.119 D1 6.86 - 0.270 -
b 0.51 0.99 0.020 0.039 E 9.65 10.67 0.380 0.420
b1 0.51 0.89 0.020 0.035 E1 6.22 - 0.245 -
b2 1.14 1.78 0.045 0.070 e 2.54 BSC 0.100 BSC
b3 1.14 1.73 0.045 0.068 L 13.46 14.10 0.530 0.555
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.065
c1 0.38 0.58 0.015 0.023 L2 3.56 3.71 0.140 0.146
c2 1.14 1.65 0.045 0.065
ECN: S-82442-Rev. A, 27-Oct-08
DWG: 5977
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outmost
extremes of the plastic body.
3. Thermal pad contour optional within dimension E, L1, D1, and E1.
4. Dimension b1 and c1 apply to base metal only.
Document Number: 91367 www.vishay.com
Revision: 27-Oct-08 1
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Revision: 13-Jun-16
1
Document Number: 91000
Loading...