Vishay IRLZ24, SiHLZ24 Data Sheet

N-Channel MOSFET

G

D

S

TO-220AB

G

D

S

Available

RoHS*

COMPLIANT

Power MOSFET

IRLZ24, SiHLZ24

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 60

()V

R

DS(on)

Q

(Max.) (nC) 18

g

Q

(nC) 4.5

gs

Q

(nC) 12

gd

Configuration Single

= 5.0 V 0.10

GS

FEATURES

• Dynamic dV/dt Rating

• Logic-Level Gate Drive

•R

DS(on)

• 175 °C Operating Temperature

•Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provides the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost
effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free

SnPb

IRLZ24PbF
SiHLZ24-E3
IRLZ24
SiHLZ24

Specified at VGS = 4 V and 5 V

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

Continuous Drain Current

Pulsed Drain Current

Linear Derating Factor 0.40 W/°C

Single Pulse Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range T

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= 25 V, starting TJ = 25 °C, L = 444 μH, Rg = 25  IAS = 17 A (see fig. 12).

DD

17 A, dI/dt 140 A/μs, VDD VDS, TJ 175 °C.

c. I

SD

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91326 www.vishay.com
S11-0520-Rev. D, 21-Mar-11 1

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

a

b

c

This datasheet is subject to change without notice.

VGS at 5.0 V

TC = 25 °C

= 100 °C 12

C

= 25 °C P

C

DS

± 10

GS

I

D

IDM 68

E

AS

D

dV/dt 4.5 V/ns

, T

J

stg

60

17

64.1 mJ

60 W

- 55 to + 175

d

10 lbf · in

1.1 N · m

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V

AT

°C

IRLZ24, SiHLZ24

S

D

G

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

-62

0.50 -

-2.5

°C/WCase-to-Sink, Flat, Greased Surface R

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.060 -

V

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

DS

GS(th)

V

GSS

DSS

DS(on)

fs

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

iss

- 360 -

oss

-53-

rss

g

--4.5

gs

--12

gd

d(on)

r

-23-

d(off)

-41-

f

D

Between lead,
6 mm (0.25") from
package and center of

Internal Source Inductance L

S

die contact

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

S

I

SM

SD

rr

rr

on

MOSFET symbol
showing the
integral reverse
p - n junction diode

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.

VGS = 0 V, ID = 250 μA 60 - -

VDS = VGS, ID = 250 μA 1.0 - 2.0 V

= 10 - - ± 100 nA

GS

VDS = 60 V, VGS = 0 V - - 25

V

= 48 V, VGS = 0 V, TJ = 150 °C - - 250

DS

= 5.0 V ID = 10 A

V

GS

V

= 4.0 V ID = 8.5 A

GS

VDS = 25 V, ID = 10 A

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

b

b

b

--0.10

--0.14

7.3 - -

- 870 -

--18

V

GS

= 5.0 V

ID = 17 A, VDS = 48 V,

see fig. 6 and 13

b

-11-

V

= 30 V, ID = 17 A,

DD

R

= 9.0 , RD = 1.7, see fig. 10

g

G

b

D

S

- 110 -

-4.5-

-7.5-

--17

--68

TJ = 25 °C, IS = 17 A, VGS = 0 V

TJ = 25 °C, IF = 17 A, dI/dt = 100 A/μs

b

--1.5V

- 110 260 ns

b

-0.491.5μC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

V

V/°C

μA



S

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

www.vishay.com Document Number: 91326
2 S11-0520-Rev. D, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

IRLZ24, SiHLZ24

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Vishay Siliconix

Fig. 3 - Typical Transfer Characteristics

Fig. 2 - Typical Output Characteristics, T

Document Number: 91326 www.vishay.com
S11-0520-Rev. D, 21-Mar-11 3

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

= 175 °C

C

This datasheet is subject to change without notice.

Fig. 4 - Normalized On-Resistance vs. Temperature

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