Vishay IRLR014, IRLU014, SiHLR014, SiHLU014 Data Sheet
www.vishay.com
DPAK
(TO-252)
IPAK
(TO-251)
G
D
S
S
D
G
D
IRLR014, IRLU014, SiHLR014, SiHLU014
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) 60
R
()V
DS(on)
Q
(Max.) (nC) 8.4
g
Q
(nC) 3.5
gs
Q
(nC) 6.0
gd
Configuration Single
= 5.0 V 0.20
GS
FEATURES
• Dynamic dV/dt Rating
• Surface Mount (IRLR014, SiHLR014)
• Straight Lead (IRLU014, SiHLU014)
• Available in Tape and Reel
• Logic-Level Gate Drive
•R
Specified at VGS = 4 V and 5 V
DS(on)
• Fast Switching
D
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
G
S
N-Channel MOSFET
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRLU, SiHLU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)
Lead (Pb)-free and Halogen-free SiHLR014-GE3 - SiHLR014TRL-GE3 SiHLU014-GE3
Lead (Pb)-free
Note
a. See device orientation.
IRLR014PbF IRLR014TRPbF
SiHLR014-E3 SiHLR014T-E3
a
IRLR014TRLPbF
a
SiHLR014TL-E3
a
IRLU014PbF
a
SiHLU014-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current V
Pulsed Drain Current
a
Linear Derating Factor 0.20
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
e
b
Maximum Power Dissipation T
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
c
e
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak Temperature)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 25 V, starting TJ = 25 °C, L = 924 μH, Rg = 25 , IAS = 7.7 A (see fig. 12).
DD
c. I
10 A, dI/dt 90 A/μs, VDD VDS, TJ 150 °C.
SD
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
S13-0164-Rev. D, 04-Feb-13
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
at 5.0 V
GS
= 25 °C
C
TA = 25 °C 2.5
d
for 10 s 260
DS
± 10
GS
T
= 25 °C
C
= 100 °C 4.9
C
I
D
IDM 31
E
AS
P
D
dV/dt 4.5 V/ns
, T
J
stg
- 55 to + 150
1
60
7.7
0.020
W/°C
27.4 mJ
25
Document Number: 91321
V
AT
W
°C
IRLR014, IRLU014, SiHLR014, SiHLU014
D
G
S
D
G
www.vishay.com
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Ambient
(PCB Mount)
a
Maximum Junction-to-Case (Drain) R
thJA
R
thJA
thJC
- - 110
--50
--5.0
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.073 - V/°C
V
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
DS
GS(th)
V
GSS
DSS
V
DS(on)
fs
V
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
iss
- 170 -
oss
-42-
rss
g
--3.5
gs
--6.0
gd
d(on)
r
-17-
d(off)
-26-
f
D
S
V
Between lead,
6 mm (0.25") from
package and center of
die contact
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
I
SM
SD
rr
rr
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μs
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
VGS = 0 V, ID = 250 μA 60 - - V
VDS = VGS, ID = - 250 μA 1.0 - 2.0 V
= ± 10 V - - ± 100 nA
GS
VDS = 60 V, VGS = 0 V - - 25
V
= 48 V, VGS = 0 V, TJ = 125 °C - - 250
DS
= 5.0 V ID = 4.6 A
GS
= 4.0 V ID = 3.9 A
GS
b
b
VDS = 25 V, ID = 4.6 A 3.4 - - S
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
= 10 A, VDS = 48 V,
I
= 5.0 V
GS
V
R
= 12 , RD = 2.8 , see fig. 10
g
TJ = 25 °C, IS = 7.7 A, VGS = 0 V
D
see fig. 6 and 13
= 30 V, ID = 10 A,
DD
c
b
b
b
b
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Vishay Siliconix
°C/W
- - 0.20
- - 0.28
- 400 -
--8.4
-9.3-
- 110 -
-4.5-
-7.5-
--7.7
--31
--1.6V
- 65 130 ns
- 0.33 0.65 μC
μA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
A
S13-0164-Rev. D, 04-Feb-13
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: hvm@vishay.com
2
Document Number: 91321
IRLR014, IRLU014, SiHLR014, SiHLU014
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, T
= 150 °C
C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
S13-0164-Rev. D, 04-Feb-13
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
Document Number: 91321
www.vishay.com
IRLR014, IRLU014, SiHLR014, SiHLU014
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
S13-0164-Rev. D, 04-Feb-13
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
4
Document Number: 91321
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