Vishay IRLL110, SiHLL110 Data Sheet
www.vishay.com
N-Channel MOSFET
G
D
S
Available
IRLL110, SiHLL110
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) 100
R
()V
DS(on)
Q
(Max.) (nC) 6.1
g
Q
(nC) 2.6
gs
Q
(nC) 3.3
gd
Configuration Single
= 5.0 V 0.54
GS
FEATURES
• Surface mount
• Available in tape and reel
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Logic-level gate drive
•R
• Fast switching
• Material categorization: for definitions of compliance
specified at VGS = 4 V and 5 V
DS(on)
please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
SOT-223
D
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SOT-223 package is designed for surface-mounting
S
D
G
using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic
pick-and-place as with other SOT or SOIC packages but
Marking code: LB
has the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation of
greater than 1.25 W is possible in a typical surface mount
application.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free - SiHLL110TR-GE3
Lead (Pb)-free IRLL110PbF IRLL110TRPbF
Note
a. See device orientation.
SOT-223 SOT-223
Tube Tape and Reel
a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at 5.0 V
GS
C
= 100 °C 0.93
C
DS
± 10
GS
I
D
IDM 12
Linear Derating Factor 0.025
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak Temperature)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 25 V, starting TJ = 25 °C, L = 25 mH, Rg = 25 , IAS = 1.5 A (see fig. 12).
DD
c. I
5.6 A, dI/dt 75 A/μs, VDD VDS, TJ 150 °C.
SD
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
S15-1195-Rev. F, 25-May-15
e
b
a
a
= 25 °C
e
c
d
C
TA = 25 °C 2.0
for 10 s 300
E
AS
I
AR
E
AR
P
D
dV/dt 5.5 V/ns
, T
J
stg
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
100
1.5
0.017
50 mJ
1.5 A
0.31 mJ
3.1
-55 to +150
Document Number: 91320
V
AT
W/°C
W
°C
IRLL110, SiHLL110
D
S
G
S
D
G
www.vishay.com
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient
(PCB Mount)
a
Maximum Junction-to-Case (Drain) R
R
thJA
thJC
-60
-40
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.12 - V/°C
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
DS
GS(th)
V
GSS
DSS
V
DS(on)
fs
V
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
iss
-80-
oss
-15-
rss
g
--2.6
gs
--3.3
gd
d(on)
r
-16-
d(off)
-18-
f
D
V
Between lead,
6 mm (0.25") from
package and center of
Internal Source Inductance L
S
die contact
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
I
SM
SD
rr
rr
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/μs
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
VGS = 0 V, ID = 250 μA 100 - - V
VDS = VGS, ID = 250 μA 1.0 - 2.0 V
= ± 10 V - - ± 100 nA
GS
VDS = 100 V, VGS = 0 V - - 25
= 80 V, VGS = 0 V, TJ = 125 °C - - 250
V
DS
= 5.0 V ID = 0.90 A
GS
= 4.0 V ID = 0.75 A - - 0.76
GS
b
VDS = 25 V, ID = 0.90 A 0.57 - - S
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
= 5.6 A, VDS = 80 V,
I
= 5.0 V
GS
V
R
TJ = 25 °C, IS = 1.5 A, VGS = 0 V
D
see fig. 6 and 13
= 50 V, ID = 5.6 A,
DD
= 12 , RD = 8.4
g
b
b
b
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Vishay Siliconix
°C/W
- - 0.54
- 250 -
--6.1
-9.3-
-47-
-4.0-
-6.0-
--1.5
--12
--2.5V
- 110 130 ns
-0.500.65μC
μA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
A
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: hvm@vishay.com
S15-1195-Rev. F, 25-May-15
2
Document Number: 91320
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRLL110, SiHLL110
Vishay Siliconix
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
S15-1195-Rev. F, 25-May-15
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
Document Number: 91320
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