Vishay IRLIZ24G, SiHLIZ24G Data Sheet

Power MOSFET

IRLIZ24G, SiHLIZ24G

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 60

(Ω)V

R

DS(on)

Q

(Max.) (nC) 18

g

Q

(nC) 4.5

gs

Q

(nC) 12

gd

Configuration Single

= 5.0 V 0.10

GS

FEATURES

• Isolated Package

• High Voltage Isolation = 2.5 kV
f = 60 Hz)

• Sink to Lead Creepage Distance = 4.8 mm

• Logic-Level Gate Drive

•R

• Fast Switching

Specified at VGS = 4 V and 5 V

DS(on)

• Ease of Paralleling

• Lead (Pb)-free

TO-220 FULLPAK

D

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and

G

cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The molding compound used provides a high isolation

S

D

G

N-Channel MOSFET

S

capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.

ORDERING INFORMATION

Package TO-220 FULLPAK

Lead (Pb)-free

IRLIZ24GPbF
SiHLIZ24G-E3

(t = 60 s;

RMS

RoHS

COMPLIANT

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

Linear Derating Factor 0.24 W/°C

Single Pulse Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range T

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

= 25 V, starting TJ = 25 °C, L = 595 µH, RG = 25 Ω, IAS = 14 A (see fig. 12c).

b. V

DD

c. I

≤ 17 A, dI/dt ≤ 140 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.

SD

d. 1.6 mm from case.

Document Number: 91316 www.vishay.com
S09-0037-Rev. A, 19-Jan-09 1

a

b

c

at 5.0 V

GS

C

= 100 °C 10

C

= 25 °C P

C

DS

± 10

GS

I

D

IDM 56

E

AS

D

dV/dt 4.5 V/ns

, T

J

stg

60

14

100 mJ

37 W

- 55 to + 175

d

10 lbf · in

1.1 N · m

V

AT

°C

IRLIZ24G, SiHLIZ24G

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thJC

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.065 - V/°C

V

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Drain to Sink Capacitance C f = 1.0 MHz - 12 -

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

DS

GS(th)

V

GSS

DSS

DS(on)

fs

iss

- 360 -

oss

-53-

rss

g

--4.5

gs

--12

gd

d(on)

r

-23-

d(off)

-41-

f

D

V

V

GS

V

GS

V

GS

Between lead,
6 mm (0.25") from
package and center of

S

S

I

SM

SD

rr

rr

on

die contact

MOSFET symbol
showing the

integral reverse
p - n junction diode

TJ = 25 °C, IF = 17 A, dI/dt = 100 A/µs

-65

-4.1

°C/W

VGS = 0 V, ID = 250 µA 60 - - V

VDS = VGS, ID = 250 µA 1.0 - 2.0 V

= ± 10 V - - ± 100 nA

GS

VDS = 60 V, VGS = 0 V - - 25

= 48 V, VGS = 0 V, TJ = 150 °C - - 250

DS

= 5.0 V ID = 8.4 A

= 4.0 V ID = 7.0 A

VDS = 25 V, ID = 8.4 A

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

b

b

b

- - 0.10 Ω

- - 0.14 Ω

7.3 - - S

- 870 -

--18

= 17 A, VDS = 48 V,

I

= 5.0 V

D

see fig. 6 and 13

b

-11-

= 30 V, ID = 17 A,

V

DD

R

= 9.0 Ω, RD= 1.7 Ω,

G

see fig. 10

b

G

G

TJ = 25 °C, IS = 14 A, VGS = 0 V

D

S

D

S

b

- 110 -

-4.5-

-7.5-

--14

--56

--1.5V

- 130 260 ns

b

- 0.75 1.5 µC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

µA

pF

nC Gate-Source Charge Q

ns

nH

A

www.vishay.com Document Number: 91316
2 S09-0037-Rev. A, 19-Jan-09

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

IRLIZ24G, SiHLIZ24G

Vishay Siliconix

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, T

= 175 °C

C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91316 www.vishay.com
S09-0037-Rev. A, 19-Jan-09 3