Vishay IRK. SERIES Data Sheet
Bulletin I27102 rev. C 05/02
IRK. SERIES
SCR / SCR and SCR / DIODE
Features
High voltage
Electrically isolated base plate
3000 V
Industrial standard package
Simplified mechanical designs, rapid assembly
High surge capability
Large creepage distances
UL E78996 approved
isolating voltage
RMS
Description
This new IRK serie of MAGN-A-paks modules uses high
voltage power thyristor/thyristor and thyristor/diode in
seven basic configurations. The semiconductors are
electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. They
can be interconnected to form single phase or three
phase bridges or as AC-switches when modules are
connected in anti-parallel mode.
These modules are intended for general purpose applications such as battery chargers, welders and plating
equipment and where high voltage and high current are
required (motor drives, U.P.S., etc.).
MAGN-A-pak
Power Modules
170A
230A
250A
Major Ratings and Characteristics
Parameters IRK.170.. IRK.230.. IRK.250.. Units
I
@ 85°C 170 230 250 A
T(AV)
I
T(RMS)
I
@ 50Hz 5100 7500 8500 A
TSM
@ 60Hz 5350 7850 8900 A
I2t @ 50Hz 131 280 361 KA2s
@ 60Hz 119 256 330 KA2s
2
I
√t 1310 2800 3610 KA2√s
V
/ V
DRM
RRM
T
range -40 to 130
J
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377 510 555 A
Up to1600 Up to 2000 Up to1600 V
o
C
1
IRK.170, .230, .250 Series
Bulletin I27102 rev. C 05/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number Voltage V
Code repetitive peak reverse and peak reverse voltage @ 130°C
off-state blocking voltage
IRK.170- 08 800 900
IRK.250- 12 1200 1300
IRK.230- 08 800 900 50
04 400 500 50
14 1400 1500
16 1600 1700
12 1200 1300
16 1600 1700
18 1800 1900
20 2000 2100
On-state Conduction
Parameters IRK.170 IRK.230 IRK.250 Units Conditions
I
Maximum average on-state current 170 230 250 A 180o conduction, half sine wave
T(AV)
@ Case temperature 85 85 85
I
Maximum RMS on -state current 37 7 510 555 A as AC switch
T(RMS)
I
Maximum peak, one-cycle on-state, 5100 7500 8500 A t = 10ms No voltage
TSM
non-repetitive surge current 5350 7850 8900 t = 8.3ms reapplied
2
t Maximum I2t for fusing 131 28 0 361 KA2s t = 10ms No voltage initial TJ = TJ max
I
2
I
√t Maximum I2√t for fusing 1310 2800 3610 KA2√s t = 0.1 to 10ms, no voltage reapplied
V
Low level value of threshold voltage 0.89 1.03 0.97 V (16.7% x π x I
T(TO)1
High level value of threshold voltage 1.12 1.07 1.00 (I > π x I
V
T(TO)2
Low level on-state slope resistance 1.34 0.77 0.60 mΩ (16.7% x π x I
r
t1
High level on-state slope resistance 0.96 0.73 0.57 (I > π x I
r
t2
VTMMaximum on-state voltage drop 1.60 1.59 1.44 V
IHMaximum holding current 500 500 500 mA Anode supply=12V, initial IT=30A, TJ=25oC
Maximum latching current 1000 1000 1000 Anode supply=12V, resistive load=1Ω
I
L
RRMVDRM
, maximum V
, maximum non-repetitive I
RSM
VVm A
o
C
4300 6300 7150 t = 10ms 100% V
4500 6600 7500 t = 8.3ms reapplied Sinusoidal half wave,
119 256 330 t = 8.3ms reapplied
92.5 198 255 t = 10ms 100% V
84.4 181 233 t = 8.3ms reapplied
(AV)
T
(AV)
T
= π x I
I
TM
Av. power = V
gate pulse: 10V, 100µs, T
T(AV)
RRM
RRM
< I < π x I
T(AV)
), T
= TJ max.
J
< I < π x I
T(AV)
), T
= TJ max.
J
, T
= T
max., 180o conduction
J
J
x I
T(TO)
T(AV)
T(AV)
T(AV)
+ rf x (I
RRM IDRM
), T
= TJ max.
J
), TJ = TJ max.
T(RMS)
= 25°C
J
max
2
)
2
Switching
Parameters IRK.170 IRK.230 IRK.250 Units Conditions
t
Typical delay time 1.0 µsT
d
Typical rise time 2.0 Vd = 0,67% V
t
r
t
Typical turn-off time 50 - 150 µs
q
= 25oC, Gate Current=1A dI
J
DRM
I
= 300 A ; -dI/dt=15 A/µ s; TJ = TJ max ;
TM
g/dt
=1A/µs
Vr = 50 V; dV/dt = 20 V/µs ; Gate 0 V, 100 ohm
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