Bulletin I27102 rev. C 05/02
IRK. SERIES
SCR / SCR and SCR / DIODE
Features
High voltage
Electrically isolated base plate
3000 V
Industrial standard package
Simplified mechanical designs, rapid assembly
High surge capability
Large creepage distances
UL E78996 approved
isolating voltage
RMS
Description
This new IRK serie of MAGN-A-paks modules uses high
voltage power thyristor/thyristor and thyristor/diode in
seven basic configurations. The semiconductors are
electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. They
can be interconnected to form single phase or three
phase bridges or as AC-switches when modules are
connected in anti-parallel mode.
These modules are intended for general purpose applications such as battery chargers, welders and plating
equipment and where high voltage and high current are
required (motor drives, U.P.S., etc.).
MAGN-A-pak
Power Modules
170A
230A
250A
Major Ratings and Characteristics
Parameters IRK.170.. IRK.230.. IRK.250.. Units
I
@ 85°C 170 230 250 A
T(AV)
I
T(RMS)
I
@ 50Hz 5100 7500 8500 A
TSM
@ 60Hz 5350 7850 8900 A
I2t @ 50Hz 131 280 361 KA2s
@ 60Hz 119 256 330 KA2s
2
I
√t 1310 2800 3610 KA2√s
V
/ V
DRM
RRM
T
range -40 to 130
J
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377 510 555 A
Up to1600 Up to 2000 Up to1600 V
o
C
1
IRK.170, .230, .250 Series
Bulletin I27102 rev. C 05/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number Voltage V
Code repetitive peak reverse and peak reverse voltage @ 130°C
off-state blocking voltage
IRK.170- 08 800 900
IRK.250- 12 1200 1300
IRK.230- 08 800 900 50
04 400 500 50
14 1400 1500
16 1600 1700
12 1200 1300
16 1600 1700
18 1800 1900
20 2000 2100
On-state Conduction
Parameters IRK.170 IRK.230 IRK.250 Units Conditions
I
Maximum average on-state current 170 230 250 A 180o conduction, half sine wave
T(AV)
@ Case temperature 85 85 85
I
Maximum RMS on -state current 37 7 510 555 A as AC switch
T(RMS)
I
Maximum peak, one-cycle on-state, 5100 7500 8500 A t = 10ms No voltage
TSM
non-repetitive surge current 5350 7850 8900 t = 8.3ms reapplied
2
t Maximum I2t for fusing 131 28 0 361 KA2s t = 10ms No voltage initial TJ = TJ max
I
2
I
√t Maximum I2√t for fusing 1310 2800 3610 KA2√s t = 0.1 to 10ms, no voltage reapplied
V
Low level value of threshold voltage 0.89 1.03 0.97 V (16.7% x π x I
T(TO)1
High level value of threshold voltage 1.12 1.07 1.00 (I > π x I
V
T(TO)2
Low level on-state slope resistance 1.34 0.77 0.60 mΩ (16.7% x π x I
r
t1
High level on-state slope resistance 0.96 0.73 0.57 (I > π x I
r
t2
VTMMaximum on-state voltage drop 1.60 1.59 1.44 V
IHMaximum holding current 500 500 500 mA Anode supply=12V, initial IT=30A, TJ=25oC
Maximum latching current 1000 1000 1000 Anode supply=12V, resistive load=1Ω
I
L
RRMVDRM
, maximum V
, maximum non-repetitive I
RSM
VVm A
o
C
4300 6300 7150 t = 10ms 100% V
4500 6600 7500 t = 8.3ms reapplied Sinusoidal half wave,
119 256 330 t = 8.3ms reapplied
92.5 198 255 t = 10ms 100% V
84.4 181 233 t = 8.3ms reapplied
(AV)
T
(AV)
T
= π x I
I
TM
Av. power = V
gate pulse: 10V, 100µs, T
T(AV)
RRM
RRM
< I < π x I
T(AV)
), T
= TJ max.
J
< I < π x I
T(AV)
), T
= TJ max.
J
, T
= T
max., 180o conduction
J
J
x I
T(TO)
T(AV)
T(AV)
T(AV)
+ rf x (I
RRM IDRM
), T
= TJ max.
J
), TJ = TJ max.
T(RMS)
= 25°C
J
max
2
)
2
Switching
Parameters IRK.170 IRK.230 IRK.250 Units Conditions
t
Typical delay time 1.0 µsT
d
Typical rise time 2.0 Vd = 0,67% V
t
r
t
Typical turn-off time 50 - 150 µs
q
= 25oC, Gate Current=1A dI
J
DRM
I
= 300 A ; -dI/dt=15 A/µ s; TJ = TJ max ;
TM
g/dt
=1A/µs
Vr = 50 V; dV/dt = 20 V/µs ; Gate 0 V, 100 ohm
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IRK.170, .230, .250 Series
Bulletin I27102 rev. C 05/02
Blocking
Parameters IRK.170 IRK.230 IRK.250 Units Conditions
I
Max. peak reverse and off-state 50 mA T
RRM
leakage current
I
DRM
RMS isolation voltage 3000 V 50Hz, circuit to base, all termin. shorted, 25°C,1s
V
INS
dv/
Critical rate of rise of off-state voltage 1000 V/µsT
dt
Triggering
Parameters IRK.170 IRK.230 IRK.250 Units Conditions
I P
Maximum peak gate power 10.0 W tp ≤ 5ms, T
GM
Maximum average gate power 2.0 W f = 50Hz, TJ = TJ max.
P
G(AV)
Maximum peak gate current 3.0 A tp ≤ 5ms, T
+I
GM
-V
Max. peak negative gate voltage 5.0 V tp ≤ 5ms, T
GT
VGTMaximum required DC gate 4.0 V TJ = - 40oC Anode supply = 12V, resistive
voltage to trigger 3.0 V T
2.0 V T
I
Maximum required DC gate 350 mA TJ = - 40oC Anode supply = 12V, resistive
GT
current to trigger 200 mA T
100 mA T
V
Maximum gate voltage
GD
that will not trigger
Maximum gate current
I
GD
that will not trigger
Max rate of rise of
di/
dt
turned-on current
0.25 V @ TJ= TJ max., rated V
10.0 mA @ T
500 A/µs@ T
=TJ max.
J
= TJ max, exponential to 67% rated V
J
= TJ max.
J
= TJ max.
J
= TJ max.
J
o
= 25
C load ; Ra = 1Ω
J
= TJ max.
J
o
= 25
C load ; Ra = 1Ω
J
= TJ max.
J
applied
DRM
= TJ max., rated V
J
= TJ max., ITM = 400 A rated V
J
DRM
applied
DRM
DRM
applied
Thermal and Mechanical Specifications
Parameters IRK.170 IRK.230 IRK.250 Units Conditions
TJJunction operating temperature -40 to 130
T
Storage temperature range -40 to 150
stg
Maximum thermal resistance
R
thJC
junction to case
R
Thermal resistance, case to heatsink 0.02 0.02 0.02 K /W
thC-S
0.17 0.125 0.125 K /W Per junction, DC operation
T Mounting tourque ±10% A mounting compound is recommended and the
MAP to heatsink 4 to 6 Nm tourque should be rechecked after a period of
Busbar to MAP 4 to 6 Nm about 3 hours to allow for the spread of the
wt Approximate weight 500 g
17.8 oz
Case style MAGN-A-pak
o
C
o
C
Mounting surface flat, smooth and greased
(per module)
compound
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3
IRK.170, .230, .250 Series
Bulletin I27102 rev. C 05/02
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance R
Devices Units
IRK.170- 0.009 0.010 0.010 0.020 0.032 0.007 0.011 0.015 0.020 0.033 K/W
IRK.230- 0.009 0.010 0.010 0.020 0.032 0.007 0.011 0.015 0.020 0.033
IRK.250- 0.009 0.010 0.014 0.020 0.032 0.007 0.011 0.015 0.020 0.033
MAGN-A-paks Suitable for Current Source Inverters
Sinusoidal conduction @ TJ max. Rectangular conduction @ TJ max.
o
180o120
o
90
60
when devices operate at different conduction angles than DC)
thJC
o
o
30
180
o
120
o
o
90
o
60
o
30
Thyristor Diode I
V
DRM
V
RRM
V
RSM
V
RRM
V
RSM
170A 230A 250A
@ 85°C @ 85°C @ 85°C
T(AV)
/ I
F(AV)
@ T
C
1400 1500 2000 IRKH170-14D20 IRKH230-14D20 IRKH250-14D20
1400 1500 2000 IRKL170-14D20 IRKL230-14D20 IRKL250-14D20
1600 1700 2500 IRKH170-16D25 IRKH230-16D25 IRKH250-16D25
1600 1700 2500 IRKL170-16D25 IRKL230-16D25 IRKL250-16D25
1800 1900 2800 Not Available IRKH230-18D28 Not Available
1800 1900 2800 Not Available IRKL230-18D28 Not Available
2000 2100 3200 Not Available IRKH230-20D32 Not Available
2000 2100 3200 Not Available IRKL230-20D32 Not Available
For all other parameters and characteristics refer to standard IRKH... and IRKL... modules.
Application Notes
Current Source Inverters
Current-Source Inverters (also known as Sequentially
Commutated Inverters) use Phase Control (as opposed to Fast) Thyristors and Diodes.
3 x IRKL.. .
M
3 x IRKH...
3 x IRKT. . .
Current Source Inverter using 9 MAGN-A-paks
The advantages of Current Source Inverters lie in their
ease control, absence of large commutation inductances and limited fault currents.
Their simple construction, illustrated by the circuit on
the left, is further enhanced by the use of MAGN-Apaks which allow the power circuit of an Inverter to be
realised with 6 capacitors and 9 MAGN-A-paks all
mounted on just one heatsink.
The optimal design of Current Source Inverters requires the use of Diodes with blocking voltages greater
than those of the thyristors .
This departure from conventional half-bridge modules
is catered for by MAGN-A-pak range with Thyristors up
to 2000V and Diodes up to 3200V.
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Ordering Information Table
Device Code
1 - Module type
2 - Circuit configuration (See Outline Table)
3 - Current rating
4 - Voltage code: Code x 100 = V
5 - Current Source Inverters Types
Outline Table
IRK.170, .230, .250 Series
IRK T 250 - 14 D20
3
2
1
45
(See Voltage Ratings Table)
RRM
Bulletin I27102 rev. C 05/02
- All dimensions in millimeters (inches)
- Dimensions are nominal
- Full engineering drawings are available
- UL identification number for gate
and cathode wire: UL 1385
- UL identification number for package:
UL 94V0
IRKT...
IRKH...
IRKL...
IRKU...
IRKV...
NOTE: To order the Optional Hardware see Bulletin I27900
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on request
IRKK... IRKN...
5
IRK.170, .230, .250 Series
Bulletin I27102 rev. C 05/02
This product has been designed and qualified for Industrial Level.
Data and specifications subject to change without notice.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 05/02
6
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