Bulletin I27131 rev. G 10/02
IRK.41, .56 SERIES
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
Features
High Voltage
Industrial Standard Package
Thick Al metal die and double stick bonding
Thick copper baseplate
UL E78996 approved
3500V
isolating voltage
RMS
Mechanical Description
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage of
Direct Bonded Copper substrate with superior
mechanical ruggedness, thanks to the insertion of a
solid Copper baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of surface
roughness and improve thermal spread.
The Generation V of AAP module is manufactured
without hard mold, eliminating in this way any possible
direct stress on the leads.
ADD-A-pakTM GEN V Power Modules
Benefits
Up to 1600V
Full compatible TO-240AA
High Surge capability
Easy Mounting on heatsink
Al203 DBC insulator
Heatsink grounded
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.
45 A
60 A
Electrical Description
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
Major Ratings and Characteristics
Parameters IRK.41 IRK.56 Units
I
or I
T(AV)
F(AV)
@ 85°C
I
(*) 100 135 A
O(RMS)
I
@ 50Hz 850 1310 A
TSM
I
@ 60Hz 890 1370 A
FSM
I2t @ 50Hz 3.61 8.50 KA2s
@ 60Hz 3.30 7.82 KA2s
I2√t 36.1 85.0 KA2√s
V
range 400 to 1600 V
RRM
T
STG
T
J
(*) As AC switch.
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45 60 A
- 40 to 125
- 40 to125
o
C
o
C
1
IRK.41, .56 Series
Bulletin I27131 rev. G 10/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
V
, maximum V
RRM
Type number
Voltage repetitive non-repetitive peak off-state voltage, I
Code peak reverse voltage peak reverse voltage gate open circuit 125°C
-V V VmA
04 400 500 400
06 600 700 600
08 800 900 800
IRK.41/ .56 10 1000 1100 1000 15
12 1200 1300 1200
14 1400 1500 1400
16 1600 1700 1600
On-state Conduction
Parameters IRK.41 IRK.56 Units Conditions
I
Max. average on-state
T(AV)
current (Thyristors) 45 60 180
I
Maximum average 45 60 T
F(AV)
forward current (Diodes)
I
Max. continuous RMS
O(RMS
)
on-state current.
As AC switch
I
Max. peak, one cycle 850 1310 t=10ms No voltage
TSM
or non-repetitive on-state 890 1370 t=8.3ms reapplied
I
or forward current 715 1100 t=10ms 100% V
FSM
2
I
t Max. I2t for fusing 3.61 8.56 t=10ms No voltage
2
√t Max. I2√t for fusing (1) 36.1 85.6 KA2√s t=0.1 to 10ms, no voltage reapplied
I
Max. value of threshold 0.88 0.85 Low level (3)
V
T(TO)
voltage (2) 0.91 0.88 High level (4)
r
Max. value of on-state 5.90 3.53 Low level (3)
t
slope resistance (2) 5.74 3.41 High level (4)
V
Max. peak on-state or I
TM
VFMforward voltage I
di/dt Max. non-repetitive rate TJ = 25oC, from 0.67 V
of rise of turned on I
current t
IHMax. holding current 200
Max. latching current 400 TJ = 25oC, anode supply = 6V,resistive load
I
L
(1) I2t for time t
(4) I > π x I
AV
= I2√t
x √tx(2) Average power = V
x
100 135
750 1150 t=8.3ms reapplied
940 1450 t=10ms T
985 1520 t=8.3ms no voltage reapplied
3.30 7.82 t=8.3ms reapplied
2.56 6.05 t=10ms 100% V
2.33 5.53 t=8.3ms reapplied
4.42 10.05 t=10ms T
4.03 9.60 t=8.3ms no voltage reapplied
1.81 1.54 V
150 A/µs
x I
T(TO)
T(AV)
2
, maximum V
RSM
A
KA2s
V
mΩ
mA
+ r
x (I
t
T(RMS)
, max. repetitive I
DRM
o
conduction, half sine wave,
= 85oC
C
or
I
(RMS)
Sinusoidal
half wave,
RRM
Initial T
= 25oC,
J
Initial T
RRM
= 25oC,
J
TJ = TJ max
= TJ max
T
J
= π x I
TM
T(AV)
= π x I
FM
F(AV)
=π x I
T(AV)
, I
g
TM
< 0.5 µs, tp > 6 µs
r
T
= 25oC, anode supply = 6V,
J
DRM
= 500mA,
TJ = 25°C
,
resistive load, gate open circuit
2
)
(3) 16.7% x π x I
< I < π x I
AV
RRM
DRM
I
(RMS)
= TJ max.
J
= TJ max.
J
AV
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IRK.41, .56 Series
Bulletin I27131 rev. G 10/02
Triggering
Parameters IRK.41 IRK.56 Units Conditions
PGMMax. peak gate power 10 10
P
Max. average gate power 2.5 2.5
G(AV)
I
Max. peak gate current 2.5 2.5 A
GM
-V
Max. peak negative
GM
gate voltage
Max. gate voltage
V
GT
required to trigger
Max. gate current
I
GT
required to trigger
VGDMax. gate voltage
that will not trigger
I
Max. gate current
GD
that will not trigger
10
4.0 T
2.5 T
1.7 T
270 T
150 mA TJ = 25°C
80 T
0.25 V
6mA
Blocking
Parameters IRK.41 IRK.56 Units Conditions
I
Max. peak reverse and
RRM
I
off-state leakage current
DRM
at V
, V
RRM
DRM
V
RMS isolation voltage V
INS
dv/dt Max. critical rate of rise T
of off-state voltage (5) gate open circuit
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT41/16AS90.
15 mA T
2500 (1 min) 50 Hz, circuit to base, all terminals
3500 (1 sec) shorted
500 V/µs
Thermal and Mechanical Specifications
Parameters IRK.41 IRK.56 Units Conditions
TJJunction operating
temperature range
Storage temp. range - 40 to 125
T
stg
Max. internal thermal
R
thJC
resistance, junction 0.23 0.20 Per module, DC operation
to case
Typical thermal resistance
R
thCS
case to heatsink
T Mounting torque ± 10%
to heatsink 5
busbar 3
wt Approximate weight 110 (4) gr (oz)
Case style TO-240AA JEDEC
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance R
Devices Units
180
Sine half wave conduction Rect. wave conduction
o
120
o
IRK.41 0.11 0.13 0.17 0.23 0.34 0.09 0.14 0.18 0.23 0.34
IRK.56 0.09 0.11 0.13 0.18 0.27 0.07 0.11 0.14 0.19 0.28
- 40 to 125
0.1
when devices operate at different conduction angles than DC)
thJC
o
90
o
60
o
30
W
V
°C
K/W
Nm
180o120
= - 40°C
J
= 25°C
J
= 125°C
J
= - 40°C
J
= 125°C
J
T
= 125oC,
J
rated V
= 125oC,
T
J
rated V
= 125 oC, gate open circuit
J
= 125oC, linear to 0.67 V
J
DRM
DRM
applied
applied
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
DRM
Mounting surface flat, smooth and greased
A mounting compound is recommended
and the torque should be rechecked after a
period of 3 hours to allow for the spread of
the compound
o
o
90
o
60
o
30
,
°C/W
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3
IRK.41, .56 Series
Bulletin I27131 rev. G 10/02
Ordering Information Table
Device Code
IRK T 56 / 16 A S90
1
2 3
1 - Module type
2 - Circuit configuration (See Circuit Configuration table below)
3 - Current code * *
4 - Voltage code (See Voltage Ratings table)
5 - A : Gen V
6 - dv/dt code: S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
5
4
Outline Table
IRK.57 types
With no auxiliary cathode
6
* * Available with no auxiliary cathode.
To specify change: 41 to 42
56 to 57
e.g. : IRKT57/16A etc.
Dimensions are in millimeters and [inches]
IRKT IRKH IRKL
(4) (5)
(1)
~
+
(2)
-
(3)
K1G1
K2 G2
(7)
(6)
G1
(4) (5)
(1)
~
+
(2)
-
(3)
K1
NOTE: To order the Optional Hardware see Bulletin I27900
4
(1)
~
+
(2)
-
(3)
K2
(7)G2(6)
IRKN
G1
(4) (5)
(1)
-
+
(2)
+
(3)
K1
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IRK.41, .56 Series
Bulletin I27131 rev. G 10/02
130
IRK.41.. Series
R (DC) = 0.46 K/W
thJC
120
110
Conduction Angle
100
30°
60°
90°
90
80
Maximu m Allowable Case Temperature (°C)
0 1020304050
120°
180°
Average On-state Current (A)
130
IRK.41.. Series
R (DC) = 0.46 K/W
thJC
120
110
100
30°
60°
90°
90
80
Maximum Allowable Case Temperature (°C)
0 20406080
120°
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
70
180°
60
120°
50
40
30
20
10
Maximum Average On-state Power Loss (W)
90°
60°
30°
0
0 1020304050
Average On-state Current (A)
RMS Limit
Conduction A ngl e
IRK.41.. Series
Per Junction
T = 125°C
J
Fig. 3 - On-state Power Loss Characteristics
100
DC
180°
80
120°
90°
60°
30°
60
40
20
0
Maxi mum Averag e On-state Power Loss (W)
0 20406080
Average On-state Current (A)
Fig. 4 - On-state Power Loss Characteristics
Conduction Period
180°
DC
RMS Limit
Conduct ion Per iod
IRK.41.. Series
Per Junction
T = 125°C
J
800
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
700
600
500
400
IRK.41.. Series
Per Junction
300
Peak Half Si ne Wave On-state Current (A)
1 10 100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Initial T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
900
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
800
700
600
500
400
IRK.41.. Series
Per Junction
Peak Half Sine Wave On-state Current (A)
300
0.01 0.1 1
Pulse Train Duration (s)
No Voltage Reapplied
Rated V Reapplied
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
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Initial T = 125°C
J
RRM
5
IRK.41, .56 Series
Bulletin I27131 rev. G 10/02
140
180°
120
100
120°
90°
60°
30°
80
60
Conduction Angle
40
20
Maximum Total On-state Power Loss (W)
0
020
40
IRK.41.. Series
Per Module
T = 125°C
J
60
80
Total RMS Output Current (A)
Fig. 7 - On-state Power Loss Characteristics
350
300
250
200
180°
(Sine)
180°
(Rect)
150
100
2 x IRK.41.. Series
Single Phase Bridge
Maximum Total Power Loss (W)
50
0
020406080100
Connected
T = 125°C
J
Total Output Current (A)
Fig. 8 - On-state Power Loss Characteristics
0
0
.
3
.
0
5
.
7
K
K
/
W
/
W
1
K
/
W
1
.
5
K
/
W
2
K
/
W
3
K
/
W
5
K
/
W
0 20 40 60 80 100 120 140
100
R
K
/
t
h
W
S
A
=
0
.
1
K
/
W
D
e
l
t
a
R
Maximum Allowable Ambient Temperature (°C)
R
0
0
.
3
K
/
W
0
.
5
K
/
W
0
.
7
K
/
W
1
K
/
W
1
.
5
K
/
W
t
.
h
2
S
K
A
/
W
=
0
.
1
K
/
W
-
D
e
l
t
a
R
0 20 40 60 80 100 120 140
Maximum Allowable Ambient Temperature (°C)
500
450
400
350
300
250
120°
(Rect)
200
150
100
Maximum Total Power Loss (W)
50
0
0 20 40 60 80 100 120 140
3 x IRK.41.. Series
Three Phase B ridge
Connected
T = 125°C
J
Total Output Current (A)
0 20 40 60 80 100 120 140
Maximum Al l owable Ambient Te mp erature (°C)
R
t
h
S
A
=
0
.2
K/W
0
.
3
K
/
0
.
5
K
/
0
.
7
K
/
W
1
K
/
W
0
.
1
K
/
W
-
D
e
l
t
a
W
W
R
Fig. 9 - On-state Power Loss Characteristics
6
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IRK.41, .56 Series
Bulletin I27131 rev. G 10/02
130
120
110
100
90
80
70
Maximum Allowable Case Temperature (°C)
0 10203040506070
90
80
70
60
50
40
30
20
10
0
Maximum Average On-state Power Loss (W)
0 102030405060
IRK.56.. Series
R (DC) = 0.40 K/W
thJC
Conduction Angle
30°
60°
90°
120°
Average On-state Current (A)
180°
120°
90°
60°
30°
RMS Limit
Conduction An gle
IRK.56.. Series
Per Junction
T = 125°C
J
Average On-state Current (A)
Fig. 12 - On-state Power Loss Characteristics
180°
130
120
IRK.56.. Series
R (DC) = 0.40 K/W
thJC
110
Conduction Period
100
90
30°
60°
90°
120°
180°
DC
80
70
Maximum Allowable Case Temperature (°C)
0 20406080100
Average On-state Current (A)
Fig. 11 - Current Ratings CharacteristicsFig. 10 - Current Ratings Characteristics
120
100
80
60
40
20
Maximum Avera ge On-state P ower Loss (W)
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
IRK.56.. Series
Per Junction
T = 125°C
J
0
0 20 40 60 80 100
Aver age On-state Cur rent (A)
Fig. 13 - On-state Power Loss Characteristics
1200
At Any Rated Load Condition And With
Rated V Applied Following Surge.
1100
1000
900
800
700
600
IRK.56.. Series
Peak Half Sine Wave On-state Current (A)
Per Junction
500
1 10 100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
RRM
Initial T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Fig. 14 - Maximum Non-Repetitive Surge Current
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1400
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
1200
1000
800
600
IRK.56.. Series
Per Junction
Peak Half Sine Wave On-state Current (A)
400
0.01 0.1 1
Pulse Train Duration (s)
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
J
RRM
Fig. 15 - Maximum Non-Repetitive Surge Current
7
IRK.41, .56 Series
Bulletin I27131 rev. G 10/02
200
180
160
140
180°
120°
90°
60°
30°
120
100
80
Conduction Angle
60
40
20
Maximum Total On-state Power Loss (W)
0
0 20406080100120140
IRK.56.. Series
Per Modu le
T = 125°C
J
Total RMS Output Current (A)
Fig. 16 - On-state Power Loss Characteristics
450
400
350
300
250
200
180°
(Sine)
180°
(Rect)
150
100
Maximum Total Power Loss (W)
50
0
0 20406080100120140
2 x IRK.56.. Series
Single Phase Bridge
Connected
T = 125°C
J
Total Output Current (A)
Fig. 17 - On-state Power Loss Characteristics
0
.
3
K
0
.
4
K
/
W
0
.
5
K/
W
0
.
7
K
/
W
1
K
/
W
1
.
5
K
/
W
2
K
/
W
4
K
/
W
R
0
.
2
t
h
K
/
W
S
/
A
W
=
0
.
1
K
/
W
D
e
l
t
a
R
0 20406080100120140
Maximum Allowable Ambient Temperature (°C)
R
th
S
A
=
0
.
2
0
.
3
0
.
5
0
.
7
K
1
K
/
2
K
/
0
.
K
K
K
/
/
W
W
1
/
/
W
W
W
K
W
/
W
-
D
e
l
t
a
R
0 20406080100120140
Maximum Al lowable Ambient Temperature (°C)
600
R
th
S
A
500
400
120°
300
200
100
Maximum Total Power Loss (W)
0
0 20 40 60 80 100 120 140 160 180
(Rect)
3 x IRK.56.. Series
Three Phase Bridge
Connected
T = 125°C
J
Total Output Current (A)
0 20 40 60 80 100 120 140
Maximum Allowable Ambient Temperature (°C)
=
0
.
1
0
.
2
0
.
3
K
/
0
.
5
K
0
.
7
K
1
K
/
W
K
/
K
/
W
/
/
W
W
-
W
W
D
e
l
t
a
R
Fig. 18 - On-state Power Loss Characteristics
8
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IRK.41, .56 Series
Bulletin I27131 rev. G 10/02
1000
100
T = 25°C
J
10
T = 125°C
J
IRK.41.. Series
Instantaneous On-state Current (A)
1
01234567
Per Junction
Instantaneous On-state Vol tage (V)
1000
100
T = 25°C
J
10
T = 125°C
J
IRK.56.. Series
Instantaneous On-state Current (A)
1
0.5 1 1.5 2 2.5 3 3.5 4 4.5
Per Junction
Instan taneous On- state Voltage (V)
Fig. 19 - On-state Voltage Drop Characteristics Fig. 20 - On-state Voltage Drop Characteristics
500
450
400
IRK.41.. Series
IRK.56.. Series
T = 125 °C
J
I = 200 A
TM
350
300
250
200
150
100
10 20 30 40 50 60 70 80 90 100
Maximum Reverse Recov ery Charge - Qrr (µC)
Rate Of Fall Of On-state Current - di/dt (A/µs)
100 A
50 A
20 A
10 A
110
100
90
80
70
60
50
IRK.41.. Series
IRK.56.. Series
40
30
Maximum Reverse Recovery Current - Irr (A)
10 20 30 40 50 60 70 80 90 100
T = 125 °C
J
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 22 - Recovery Current CharacteristicsFig. 21 - Recovery Charge Characteristics
I = 200 A
TM
100 A
50 A
20 A
10 A
thJC
Transient Thermal Impe d an ce Z (K/W)
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1
Steady State Value:
R = 0 .46 K/W
thJC
R = 0 .40 K/W
thJC
(DC Operation)
IRK.41.. Series
0.1
IRK.56.. Series
Per Junction
0.01
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
Fig. 23 - Thermal Impedance Z
Characteristics
thJC
9
IRK.41, .56 Series
Bulletin I27131 rev. G 10/02
100
Rectangular gate pulse
a)Recommended load line f or
rated di/dt: 20 V, 30 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommend ed load li ne for
<= 30% rated di/dt: 20 V, 65 ohms
10
tr = 1 µs, tp >= 6 µs
1
Instanta neous Gate Voltage (V)
VGD
0.1
0.001 0.01 0.1 1 10 100 1000
IGD
(1) PGM = 100 W, tp = 500 µs
(2) P GM = 50 W, tp = 1 ms
(3) P GM = 20 W, tp = 2 5 ms
(4) P GM = 10 W, tp = 5 ms
(a)
(b)
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C
IRK.41../.56.. Series
Instantaneous Gate Current (A)
Frequency Limited by PG(AV )
Fig. 24 - Gate Characteristics
(4)
(2) (1)
(3)
This product has been designed and qualified for Industrial Level.
Data and specifications subject to change without notice.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 10/02
10
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