Vishay IRK.136 SERIES, IRK.142 SERIES, IRK.162 SERIES Data Sheet

Bulletin I27117 rev. C 03/02

SERIES

IRK.136, .142, .162

THYRISTOR/DIODE and
THYRISTOR/THYRISTOR

Features

High Voltage
Electrically Isolated by DBC Ceramic ( Al2O3)
3500 V
Industrial Standard Package
High Surge Capability
Glass Passivated Chips
Modules uses High Voltage Power thyristor/diodes
in three Basic Configurations
Simple Mounting

UL E78996 approved

Isolating Voltage

RMS

Applications

DC Motor Control and Drives
Battery Charges
Welders
Power Converters
Lighting Control
Heat and Temperature Control

NEW INT-A-pak Power Modules

135 A
140 A
160 A

Major Ratings and Characteristics

Parameters IRK.136.. IRK.142.. IRK.162.. Units

I

T(AV)

@ T

C

I

T(RMS)

I

@ 50Hz 3200 4500 4870 A

TSM

@ 60Hz 3360 4712 5100 A

I2t @ 50Hz 51.5 102 119 KA2s

@ 60Hz 47 92.5 108 KA2s

2

I

√t 515.5 1013 1190 KA2√s

V

RRM

TJrange - 40 to 125 °C

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135 140 160 A

85 85 85 °C

300 310 355 A

400 to 1600 V

CASE STYLE NEW INT-A-PAK

1

IRK.136, .142, .162 Series

Bulletin I27117 rev. C 03/02

Electrical Specifications

Voltage Ratings

Type number Voltage V

Code peak reverse voltage peak reverse voltage @ 125°C

IRK.136 04 400 500 50

IRK.142 08 800 900

IRK.162 12 1200 1300

14 1400 1500

16 1600 1700

Forward Conduction

Parameter IRK.136 IRK.142 IRK.162 Units Conditions

Max. average on-state current 135 140 160 A 180° conduction, half sine wave

I

T(AV)

@ Case temperature 85 85 85 °C

I

Max. RMS on-state current 300 310 355 A as AC switch

T(RMS)

Maximum peak, one-cycle 3200 4500 4870 A t = 10ms No voltage

I

TSM

on-state, non-repetitive 3360 4712 5100 t = 8.3ms reapplied

surge current 2700 3785 4100 t = 10ms 100% V

2

I

t Maximum I2t for fusing 51.5 102 119 KA2s t = 10ms No voltage Initial TJ = TJ max.

2

√t Maximum I2√t for fusing 515.5 1013 1190 KA2√s t = 0.1 to 10ms, no voltage reapplied

I

V

Low level value of threshold 0.86 0.83 0.8 V (16.7% x π x I

(TO)1

T

voltage
High level value of threshold 1.05 1 0.98 (I > π x I

V

(TO)2

T

voltage
Low level value on-state 2.02 1.78 1.67 mΩ (16.7% x π x I

r

t1

slope resistance
High level value on-state 1.65 1.43 1.38 (I > π x I

r

t2

slope resistance

Maximum forward voltage drop 1.57 1.55 1.54 V I

V

TM

, Maximum repetitive V

RRM/VDRM

, Maximum non-repetitive I

RSM/VDSM

VVm A

2800 3963 4300 t = 8.3ms reapplied Sine half wave,

47 92.5 108 t = 8.3ms reapplied

36.5 71.6 84 t = 10ms 100% V

33.3 65.4 76.7 t = 8.3ms reapplied

(AV)

T

(AV)

T

= π x I

TM

RRM

RRM

< I < π x I

T(AV)

T(AV)

), @ TJ max.

< I < π x I

(AV)

T

T

), @ TJ max.

, TJ = 25°C, 180°conduction

T(AV)

RRM / IDRM

(AV)

), @ TJ max.

), @ TJ max.

Maximum holding current 200 mA Anode supply = 6V initial IT = 30A, TJ = 25°C

I

H

Maximum latching current 400 mA Anode supply = 6V resistive load = 1Ω

I

L

Gate pulse: 10V, 100µs, T

Switching

t

Typical delay time 1 TJ = 25oC Gate Current=1A dIg/dt=1A/µs

gd

tgrTypical rise time 2 µs TJ = 25oC Vd=0,67% V

tqTypical turn-off time 50 - 200 I

= 300 A; -dI/dt = 15 A/µs; T

TM

V

= 50 V; dV/dt = 20 V/µs; Gate 0 V, 100Ω

r

2

= 25°C

J

DRM

= TJ max

J

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IRK.136, .142, .162 Series

Bulletin I27117 rev. C 03/02

Blocking

I

Maximum peak reverse and 50 mA TJ = 125oC

RRM

off-state leakage current

I

DRM

RMS isolation voltage 3500 V 50Hz, circuit to base, all terminals shorted, t = 1s

V

INS

dV/dt critical rate of rise of off-state voltage 1000 V/µs T

Triggering

Parameter IRK.136 IRK.142 IRK.162 Units Conditions

P

Max. peak gate power 12 W tp ≤ 5ms, T

GM

Max. average gate power 3 W f=50Hz, TJ = TJ max.

P

G(AV)

Max. peak gate current 3 A tp ≤ 5ms, T

I

GM

Max. peak negative 10 V

-V

GT

gate voltage

V

Max. required DC gate 4 V TJ = - 40° C Anode supply = 6V, resistive

GT

voltage to trigger 2.5 T

1.7 T

I

Max. required DC gate 270 TJ = - 40° C Anode supply = 6V, resistive

GT

current to trigger 150 mA T

80 T

V

Max. gate voltage 0.3 V @ TJ = TJ max., rated V

GD

that will not trigger

I

Max. gate current 10 m A

GD

that will not trigger

di/

Max. rate of rise of 300 A/µs @ TJ = TJ max., I

dt

turned-on current

= TJ max., exponential to 67% rated V

J

= TJ max.

J

= TJ max.

J

= 25°C load; Ra = 1Ω

J

= TJ max.

J

= 25°C load; Ra = 1Ω

J

= TJ max.

J

= 400A rated V

TM

DRM

applied

DRM

DRM

applied

Thermal and Mechanical Specifications

Parameter IRK.136 IRK.142 IRK.162 Units Conditions

TJMax. junction operating -40 to 125 °C

temperature range

T

Max. storage temperature -40 to 150 °C

stg

range

R

Max. thermal resistance, 0.18 0.18 0.16 K/W DC operation, per junction

thJC

junction to case

R

Max. thermal resistance, 0.05 K/W Mounting surface smooth, flat and greased

thCS

case to heatsink Per module

T Mounting IAP to heatsink 4 to 6 Nm

torque ± 10% busbar to IAP 4 to 6

wt Approximate weight 200 (7.1) g(oz)

Case Style New Int-A-Pak

A mounting compound is recommended and
the torque should be rechecked after a period
of 3 hours to allow for the spread of the
compound. Lubricated threads.

∆R Conduction (per Junction)

(The following table shows the increment of thermal resistance R

Devices Units

Sinusoidal conduction @ TJ max. Rectangular conduction @ TJ max.

o

180o120

o

90

IRK.136 0.007 0.01 0.013 0.0155 0.017 0.009 0.012 0.014 0.015 0.017

IRK.142 0.0019 0.0019 0.0020 0.0020 0.0021 0.0018 0.0022 0.0023 0.0023 0.0020 K/W

IRK.162 0.0030 0.0031 0.0032 0.0033 0.0034 0.0029 0.0036 0.0039 0.0041 0.0040

when devices operate at different conduction angles than DC)

thJC

o

60

o

30

180

o

120

o

90

o

o

60

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o

30

3

IRK.136, .142, .162 Series

Bulletin I27117 rev. C 03/02

Ordering Information Table

Device Code

IRK T 162 / 16

Outline Table

1 2

3

4

1 - Module Type

2 - Circuit Configuration

3 - Current Rating: I

T(AV)

4 - Voltage Code: Code x 100 = V

RRM

Dimensions are in millimeters and [inches]

IRKT IRKH IRKL

1

2

3

5

7
6

4

NOTE: To order the Optional Hardware see Bulletin I27900

1

2

3

5
4

4

1

2

3

7
6

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