Vishay IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Data Sheet

IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)			60
RDS(on) ( )		VGS = 10 V	0.018
Qg (Max.) (nC)			110
Qgs (nC)			29
Qgd (nC)			36
Configuration			Single
			D
I2PAK (TO-262)		D2PAK (TO-263)
		G
		G
	D S	D
G	D S	S
		S

			S
			N-Channel MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition

• Advanced Process Technology

• Dynamic dV/dt

• 175 °C Operating Temperature

• Fast Switching

•Fully Avalanche Rated

•Drop in Replacement of the IRFZ48, SiHFZ48 for Linear/Audio Applications

•Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2 W in a typical surface mount application.

ORDERING INFORMATION

Package	D2PAK (TO-263)	I2PAK (TO-262)
Lead (Pb)-free and Halogen-free	SiHFZ48RS-GE3	-
Lead (Pb)-free	IRFZ48RSPbF	IRFZ48RLPbF
Lead (Pb)-free	SiHFZ48RS-E3	SiHFZ48RL-E3
	SiHFZ48RS-E3	SiHFZ48RL-E3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER			SYMBOL	LIMIT	UNIT
Drain-Source Voltage			VDS	60	V
Gate-Source Voltage			VGS	± 20	V
Gate-Source Voltage			VGS	± 20
Continuous Drain Currente	VGS at 10 V	TC = 25 °C	ID	50
Continuous Drain Currente	VGS at 10 V	TC = 100 °C	ID	50	A
		TC = 100 °C		50	A
Pulsed Drain Currenta, e			IDM	290
Linear Derating Factor				1.3	W/°C
Single Pulse Avalanche Energyb, e			EAS	100	mJ
Maximum Power Dissipation	TC = 25 °C		PD	190	W
Peak Diode Recovery dV/dtc, e			dV/dt	4.5	V/ns
Operating Junction and Storage Temperature Range			TJ, Tstg	- 55 to + 175	°C
Soldering Recommendations (Peak Temperature)d	for 10 s			300d
Mounting Torque	6-32 or M3 screw			10	lbf · in
Mounting Torque	6-32 or M3 screw			1.1	N · m
				1.1	N · m

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.VDD = 25 V, Starting TJ = 25 °C, L = 22 μH, Rg = 25 , IAS = 72 A (see fig. 12).

c.ISD 72 A, dI/dt 200 A/μs, VDD VDS, TJ 175 °C.

d.1.6 mm from case.

e.Current limited by the package, (die current = 72 A).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91296	www.vishay.com
S11-1054-Rev. C, 30-May-11	1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER	SYMBOL	TYP.	MAX.	UNIT

Maximum Junction-to-Ambient	RthJA	-	62
Case-to-Sink, Flat, Greased Surface	RthCS	0.50	-	°C/W
Maximum Junction-to-Case (Drain)	RthJC	-	0.8

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

VDS Temperature Coefficient

VDS/TJ

Reference to 25 °C, ID = 1 mAc

0.60

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.0

4.0

Gate-Source Leakage

IGSS

VGS = ± 20 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 60 V, VGS = 0 V

μA

VDS = 48 V, VGS = 0 V, TJ = 150 °C

250

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 43 Ab

0.018

Forward Transconductance

gfs

VDS = 25 V, ID = 43 Ab

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

2400

Output Capacitance

Coss

VDS = 25 V,

1300

f = 1.0 MHz, see fig. 5c

Reverse Transfer Capacitance

Crss

190

Total Gate Charge

ID = 72 A, VDS = 48 V,

110

Gate-Source Charge

Qgs

VGS = 10 V

see fig. 6 and 13b, c

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

8.1

Rise Time

VDD = 30 V, ID = 72 A,

250

Turn-Off Delay Time

td(off)

Rg = 9.1 , RD = 0.34 , see fig. 10b, c

210

Fall Time

250

Internal Drain Inductance

Between lead,

4.5

6 mm (0.25") from

Internal Source Inductance

package and center of

7.5

die contact

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

50c

showing the

Pulsed Diode Forward Currenta

ISM

integral reverse

290

p - n junction diode

Body Diode Voltage

VSD

TJ = 25 °C, IS = 72 A, VGS = 0 Vb

2.0

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 72 A, dI/dt = 100 A/μsb, c

120

180

Body Diode Reverse Recovery Charge

Qrr

0.50

0.80

μC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width 300 μs; duty cycle 2 %.

c.Current limited by the package, (die current = 72 A).

www.vishay.com	Document Number: 91296
2	S11-1054-Rev. C, 30-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

<![if ! IE]> <![endif]>Resistance		2.5	ID = 72A
		2.0

<![if ! IE]> <![endif]>Drain-to-Source On	<![if ! IE]> <![endif]>(Normalized)	1.5
		1.0

<![if ! IE]> <![endif]>,		0.5
<![if ! IE]> <![endif]>DS(on)		0.5
<![if ! IE]> <![endif]>DS(on)								VGS = 10V
<![if ! IE]> <![endif]>R		0.0						VGS = 10V
		0.0		0	20	40	60	80 100 120 140 160 180
		-60 -40 -20		0	20	40	60	80 100 120 140 160 180
			T	, Junction Temperature (°C)
			J

Fig. 2 - Typical Output Characteristics	Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91296	www.vishay.com
S11-1054-Rev. C, 30-May-11	3

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

1000
		OPERATION IN THIS AREA LIMITED
		BY RDS(on)
		10us
<![if ! IE]> <![endif]>(A)
<![if ! IE]> <![endif]>Current	100	100us
		100us

<![if ! IE]> <![endif]>, Drain		1ms
<![if ! IE]> <![endif]>, Drain	10	10ms
<![if ! IE]> <![endif]>D	10


<![if ! IE]> <![endif]>I
		TC= 25 °C
		TJ = 175 °C

Single Pulse
1	1	10	100	1000
0.1

VDS , Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area

www.vishay.com	Document Number: 91296
4	S11-1054-Rev. C, 30-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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