Vishay IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L Data Sheet

D2PAK (TO-263)

I2PAK (TO-262)

IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) 60

()V

DS(on)

(Max.) (nC) 67

(nC) 18

(nC) 25

Configuration Single

= 10 V 0.028

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition

• Advanced Process Technology

• Surface Mount (IRFZ44S, SiHFZ44S)

•

Low-Profile Through-Hole (IRFZ44L, SiHFZ44L

• 175 °C Operating Temperature

•Fast Switching

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer

with an extermely efficient reliabel deviece for use in a wide variety of applications.

The D

PAK is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

N-Channel MOSFET

highest power capability and lowest possible on-resistance in any existing surface mount package. The D suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRFZ44L, SiHFZ44L) is available for low profile applications.

ORDERING INFORMATION

Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262) Lead (Pb)-free and Halogen-free SiHFZ44S-GE3 SiHFZ44STRR-GE3

Lead (Pb)-free

IRFZ44SPbF IRFZ44STRRPbF SiHFZ44S-E3 SiHFZ44STR-E3

Note

a. See device orientation.

SiHFZ44STRL-GE3

IRFZ44STRLPbF

SiHFZ44STL-E3

IRFZ44LPbF SiHFZ44L-E3

)

PAK is

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current Continuous Drain Current Pulsed Drain Current Linear Derating Factor 1.0 W/°C Single Pulse Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt Operating Junction and Storage Temperature Range T Soldering Recommendations (Peak Temperature

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V; starting TJ = 25 °C, L = 44 μH, Rg = 25 , IAS = 51 A (see fig. 12). c. ISD  51 A, dI/dt  250 A/μs, VDD  VDS, TJ  175 °C. d. 1.6 mm from case. e. Calculated continuous current based on maximum allowable junction temperature.

f. Uses IRFZ44, SiHFZ44 data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91293 S11-1063-Rev. C, 30-May-11 1

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

a, e

VGS ± 20

VGS at 10 V

= 25 °C

= 100 °C 36

IDM 200

c, f

= 25 °C

= 25 °C 150

) for 10 s 300

100 mJ

3.7 W

dV/dt 4.5 V/ns

, T

stg

- 55 to + 175 °C

www.vishay.com

This document is subject to change without notice.

www.vishay.com/doc?91000

IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient (PCB Mounted, steady-state)

Maximum Junction-to-Case R

Note

a. When mounted on 1” square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.06 - V/°C

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Source Inductance L

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. c. Uses IRFZ44, SiHFZ44 data and test conditions. d. Calculated continuous current based on maximum allowable junction temperature.

thJA

thJC

GS(th)

GSS

-40 °C/W

-1.0

VGS = 0, ID = 250 μA 60 - - V

VDS = VGS, ID = 250 μA 2.0 - 4.0 V

= ± 20 V - - ± 100 nA

VDS = 60 V, VGS = 0 V - - 25

DSS

VGS = 10 V ID = 31 A

DS(on)

iss

- 920 -

oss

- 170 -

rss

--18

--25

d(on)

-45-

d(off)

-92-

Between lead, and center of die contact - 7.5 -

= 48 V, VGS = 0 V, TJ = 150 °C - - 250

VDS = 25 V, ID = 31 A

VGS = 0 V,

= 25 V,

f = 1.0 MHz, see fig. 5

- - 0.028 

15 - - S

- 1900 -

--67

= 51 A, VDS = 48 V,

= 10 V

see fig. 6 and 13

-14-

= 30 V, ID = 51 A,

= 9.1 , RD = 0,55 ,

see fig. 10

MOSFET symbol showing the integral reverse

p - n junction diode

TJ = 25 °C, IS = 51 A, VGS = 0 V

TJ = 25 °C, IF = 51 A, dI/dt = 100 A/μs

b, d

- 110 -

--50

- - 200

--2.5V

- 120 180 ns

- 530 800 nC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

www.vishay.com Document Number: 91293 2 S11-1063-Rev. C, 30-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Vishay Siliconix

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91293 www.vishay.com S11-1063-Rev. C, 30-May-11 3

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This document is subject to change without notice.

www.vishay.com/doc?91000

+ 7 hidden pages