Vishay IRFZ44R, SiHFZ44R Data Sheet

IRFZ44R, SiHFZ44R

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

VGS = 10 V

0.028

Qg (Max.) (nC)

Qgs (nC)

Qgd (nC)

Configuration

Single

TO-220AB

N-Channel MOSFET

FEATURES

• Advanced Process Technology

	• Ultra Low On-Resistance	Available
	• Ultra Low On-Resistance	RoHS*
	• Dynamic dV/dt Rating	RoHS*
	• 175 °C Operating Temperature	COMPLIANT
	• 175 °C Operating Temperature
	• Fast Switching
	• Fully Avalanche Rated

• Drop in Replacement of the IRFZ44, SiHFZ44 for Linear/Audio Applications

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

ORDERING INFORMATION
Package			TO-220AB

Lead (Pb)-free			IRFZ44RPbF

			SiHFZ44R-E3
			SiHFZ44R-E3

SnPb			IRFZ44R

			SiHFZ44R
			SiHFZ44R


ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER				SYMBOL	LIMIT		UNIT

Drain-Source Voltage				VDS	60		V
Gate-Source Voltage				VGS	± 20		V
Gate-Source Voltage				VGS	± 20
Continuous Drain Currente	VGS at 10 V	TC = 25 °C		ID	50
Continuous Drain Current	VGS at 10 V	TC = 100 °C		ID	36		A
Continuous Drain Current		TC = 100 °C			36		A
Pulsed Drain Currenta				IDM	200
Linear Derating Factor					1.0		W/°C

Single Pulse Avalanche Energyb				EAS	100		mJ
Maximum Power Dissipation	TC = 25 °C			PD	150		W
Peak Diode Recovery dV/dtc				dV/dt	4.5		V/ns
Operating Junction and Storage Temperature Range				TJ, Tstg	- 55 to + 175		°C
Soldering Recommendations (Peak Temperature)d	for 10 s				300
Mounting Torque	6-32 or M3 screw				10		lbf · in

					1.1		N · m
					1.1		N · m

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 44 μH, Rg = 25 Ω, IAS = 51 A (see fig. 12).
c. ISD ≤ 51 A, dV/dt ≤ 250 A/μs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
e. Current limited by the package, (die current = 51 A).
* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91292						www.vishay.com
S11-0517-Rev. B, 21-Mar-11						1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFZ44R, SiHFZ44R

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER	SYMBOL	TYP.	MAX.	UNIT

Maximum Junction-to-Ambient	RthJA	-	62
Case-to-Sink, Flat, Greased Surface	RthCS	0.50	-	°C/W
Maximum Junction-to-Case (Drain)	RthJC	-	1.0

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

VDS Temperature Coefficient

VDS/TJ

Reference to 25 °C, ID = 1 mA

0.060

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.0

4.0

Gate-Source Leakage

IGSS

VGS = ± 20

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 60 V, VGS = 0 V

μA

VDS = 48 V, VGS = 0 V, TJ = 150 °C

250

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 31 Ab

0.028

Forward Transconductance

gfs

VDS = 25 V, ID = 31 Ab

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

1900

Output Capacitance

Coss

VDS = 25 V,

920

f = 1.0 MHz, see fig. 5

Reverse Transfer Capacitance

Crss

170

Total Gate Charge

ID = 51 A, VDS = 48 V,

Gate-Source Charge

Qgs

VGS = 10 V

see fig. 6 and 13b

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

Rise Time

VDD = 30 V, ID = 51 A,

110

Turn-Off Delay Time

td(off)

Rg = 9.1 Ω, RD = 0.55 Ω, see fig. 10b

Fall Time

Internal Drain Inductance

Between lead,

4.5

6 mm (0.25") from

Internal Source Inductance

package and center of

7.5

die contact

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

50c

showing the

Pulsed Diode Forward Currenta

ISM

integral reverse

200

p - n junction diode

Body Diode Voltage

= 25 °C, I

= 51 A, V

= 0 Vb

2.5

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 51 A, dI/dt = 100 A/μsb

120

180

Body Diode Reverse Recovery Charge

Qrr

0.53

0.80

μC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width ≤ 300 μs; duty cycle ≤ 2 %.

c.Current limited by the package (die current = 51 A).

www.vishay.com	Document Number: 91292
2	S11-0517-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFZ44R, SiHFZ44R

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics

<![if ! IE]>

<![endif]>RDS(on) , Drain-to-Source On Resistance (Normalized)

Fig. 2 - Typical Output Characteristics

	Fig. 3 - Typical Transfer Characteristics
2.5	ID = 51A
2.0
1.5
1.0

0.5

VGS=10V

0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91292	www.vishay.com
S11-0517-Rev. B, 21-Mar-11	3

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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