IRFZ44R, SiHFZ44R
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) |
|
|
|
60 |
|
|
|
|
|||||
RDS(on) (Ω) |
|
VGS = 10 V |
|
|
|
|
|
0.028 |
|||||
Qg (Max.) (nC) |
|
|
|
67 |
|
|
|
|
|||||
Qgs (nC) |
|
|
|
18 |
|
|
|
|
|||||
Qgd (nC) |
|
|
|
25 |
|
|
|
|
|||||
Configuration |
|
|
|
Single |
|||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
D |
||||
TO-220AB |
|
G |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
S |
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|||
G |
D |
|
|
|
|
|
S |
||||||
|
|
|
|
|
|
|
|
N-Channel MOSFET
FEATURES
• Advanced Process Technology
• Ultra Low On-Resistance |
Available |
|
RoHS* |
||
• Dynamic dV/dt Rating |
||
• 175 °C Operating Temperature |
COMPLIANT |
|
|
||
• Fast Switching |
|
|
• Fully Avalanche Rated |
|
• Drop in Replacement of the IRFZ44, SiHFZ44 for Linear/Audio Applications
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
ORDERING INFORMATION |
|
|
|
|
|
|
|
|
|
Package |
|
|
TO-220AB |
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
Lead (Pb)-free |
|
|
IRFZ44RPbF |
|
|
|
|
||
|
|
|
|
|
|
|
|
||
|
|
SiHFZ44R-E3 |
|
|
|
|
|||
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
SnPb |
|
|
IRFZ44R |
|
|
|
|
||
|
|
|
|
|
|
|
|
||
|
|
SiHFZ44R |
|
|
|
|
|||
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) |
|
|
|
||||||
PARAMETER |
|
|
|
|
SYMBOL |
LIMIT |
|
UNIT |
|
|
|
|
|
|
|
|
|
|
|
Drain-Source Voltage |
|
|
|
|
VDS |
60 |
|
V |
|
Gate-Source Voltage |
|
|
|
|
VGS |
± 20 |
|
||
|
|
|
|
|
|
||||
Continuous Drain Currente |
|
VGS at 10 V |
TC = 25 °C |
|
ID |
50 |
|
|
|
Continuous Drain Current |
|
TC = 100 °C |
|
36 |
|
A |
|||
|
|
|
|
|
|||||
Pulsed Drain Currenta |
|
|
|
|
|
IDM |
200 |
|
|
Linear Derating Factor |
|
|
|
|
|
1.0 |
|
W/°C |
|
|
|
|
|
|
|
|
|
|
|
Single Pulse Avalanche Energyb |
|
|
|
|
EAS |
100 |
|
mJ |
|
Maximum Power Dissipation |
|
TC = 25 °C |
|
PD |
150 |
|
W |
||
Peak Diode Recovery dV/dtc |
|
|
|
|
|
dV/dt |
4.5 |
|
V/ns |
Operating Junction and Storage Temperature Range |
|
|
|
|
TJ, Tstg |
- 55 to + 175 |
|
°C |
|
Soldering Recommendations (Peak Temperature)d |
|
for 10 s |
|
|
300 |
|
|
||
Mounting Torque |
|
6-32 or M3 screw |
|
|
10 |
|
lbf · in |
||
|
|
|
|
|
|
||||
|
|
|
1.1 |
|
N · m |
||||
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
Notes |
|
|
|
|
|
|
|
|
|
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). |
|
|
|
||||||
b. VDD = 25 V, starting TJ = 25 °C, L = 44 μH, Rg = 25 Ω, IAS = 51 A (see fig. 12). |
|
|
|
|
|||||
c. ISD ≤ 51 A, dV/dt ≤ 250 A/μs, VDD ≤ VDS, TJ ≤ 175 °C. |
|
|
|
|
|
|
|
|
|
d. 1.6 mm from case. |
|
|
|
|
|
|
|
|
|
e. Current limited by the package, (die current = 51 A). |
|
|
|
|
|
|
|
|
|
* Pb containing terminations are not RoHS compliant, exemptions may apply |
|
|
|
|
|||||
|
|
|
|
|
|
|
|
|
|
Document Number: 91292 |
|
|
|
|
|
|
www.vishay.com |
||
S11-0517-Rev. B, 21-Mar-11 |
|
|
|
|
|
|
1 |
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFZ44R, SiHFZ44R
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER |
SYMBOL |
TYP. |
MAX. |
UNIT |
|
|
|
|
|
Maximum Junction-to-Ambient |
RthJA |
- |
62 |
|
Case-to-Sink, Flat, Greased Surface |
RthCS |
0.50 |
- |
°C/W |
Maximum Junction-to-Case (Drain) |
RthJC |
- |
1.0 |
|
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER |
|
SYMBOL |
|
TEST CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
|||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Static |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Drain-Source Breakdown Voltage |
|
VDS |
|
VGS = 0 V, ID = 250 μA |
60 |
- |
- |
V |
|||||||||||
VDS Temperature Coefficient |
|
VDS/TJ |
Reference to 25 °C, ID = 1 mA |
- |
0.060 |
- |
V/°C |
||||||||||||
Gate-Source Threshold Voltage |
|
VGS(th) |
|
VDS = VGS, ID = 250 μA |
2.0 |
- |
4.0 |
V |
|||||||||||
Gate-Source Leakage |
|
IGSS |
|
VGS = ± 20 |
|
|
|
|
|
|
|
- |
- |
± 100 |
nA |
||||
Zero Gate Voltage Drain Current |
|
IDSS |
|
VDS = 60 V, VGS = 0 V |
- |
- |
25 |
μA |
|||||||||||
|
VDS = 48 V, VGS = 0 V, TJ = 150 °C |
- |
- |
250 |
|||||||||||||||
|
|
|
|
||||||||||||||||
Drain-Source On-State Resistance |
|
RDS(on) |
VGS = 10 V |
|
|
|
ID = 31 Ab |
- |
- |
0.028 |
Ω |
||||||||
Forward Transconductance |
|
gfs |
|
VDS = 25 V, ID = 31 Ab |
15 |
- |
- |
S |
|||||||||||
Dynamic |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Input Capacitance |
|
Ciss |
|
VGS = 0 V, |
|
|
|
|
|
|
|
- |
1900 |
- |
|
||||
Output Capacitance |
|
Coss |
|
|
|
|
|
|
|
|
|
|
|
pF |
|||||
|
|
VDS = 25 V, |
|
|
|
|
|
|
|
- |
920 |
- |
|||||||
|
|
|
|
f = 1.0 MHz, see fig. 5 |
|
|
|
|
|||||||||||
Reverse Transfer Capacitance |
|
Crss |
|
- |
170 |
- |
|
||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||
Total Gate Charge |
|
Qg |
|
|
|
|
ID = 51 A, VDS = 48 V, |
- |
- |
67 |
|
||||||||
Gate-Source Charge |
|
Qgs |
VGS = 10 V |
|
|
- |
- |
18 |
nC |
||||||||||
|
|
|
|
see fig. 6 and 13b |
|||||||||||||||
Gate-Drain Charge |
|
Qgd |
|
|
|
|
|
|
|
|
|
|
|
|
|
- |
- |
25 |
|
Turn-On Delay Time |
|
td(on) |
|
|
|
|
|
|
|
|
|
|
|
|
|
- |
14 |
- |
|
Rise Time |
|
tr |
|
VDD = 30 V, ID = 51 A, |
- |
110 |
- |
ns |
|||||||||||
|
|
|
|
|
|
|
|||||||||||||
Turn-Off Delay Time |
|
td(off) |
Rg = 9.1 Ω, RD = 0.55 Ω, see fig. 10b |
- |
45 |
- |
|
||||||||||||
Fall Time |
|
tf |
|
|
|
|
|
|
|
|
|
|
|
|
|
- |
92 |
- |
|
Internal Drain Inductance |
|
LD |
Between lead, |
|
|
|
|
|
|
|
|
|
D |
- |
4.5 |
- |
|
||
|
6 mm (0.25") from |
|
|
|
|
|
|
|
|
|
|||||||||
Internal Source Inductance |
|
LS |
package and center of |
G |
|
|
|
|
|
- |
7.5 |
- |
nH |
||||||
|
die contact |
|
|
|
|
|
|
|
|
|
S |
|
|||||||
|
|
|
|
|
|
|
|
|
|
|
|||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
Drain-Source Body Diode Characteristics |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Continuous Source-Drain Diode Current |
|
IS |
MOSFET symbol |
|
|
|
|
|
|
|
|
D |
- |
- |
50c |
|
|||
|
showing the |
|
|
|
|
|
|
|
|
|
|
A |
|||||||
Pulsed Diode Forward Currenta |
|
ISM |
integral reverse |
|
|
|
|
G |
|
|
|
|
|
- |
- |
200 |
|
||
|
p - n junction diode |
|
|
|
|
|
|
|
S |
|
|||||||||
|
|
|
|
|
|
|
|
|
|||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Body Diode Voltage |
|
V |
T |
= 25 °C, I |
S |
= 51 A, V |
GS |
= 0 Vb |
- |
- |
2.5 |
V |
|||||||
|
|
SD |
J |
|
|
|
|
|
|
|
|
|
|
|
|||||
Body Diode Reverse Recovery Time |
|
trr |
TJ = 25 °C, IF = 51 A, dI/dt = 100 A/μsb |
- |
120 |
180 |
ns |
||||||||||||
Body Diode Reverse Recovery Charge |
|
Qrr |
- |
0.53 |
0.80 |
μC |
|||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||
Forward Turn-On Time |
|
ton |
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) |
Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
c.Current limited by the package (die current = 51 A).
www.vishay.com |
Document Number: 91292 |
2 |
S11-0517-Rev. B, 21-Mar-11 |
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFZ44R, SiHFZ44R
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
<![if ! IE]><![endif]>RDS(on) , Drain-to-Source On Resistance (Normalized)
Fig. 2 - Typical Output Characteristics
|
Fig. 3 - Typical Transfer Characteristics |
2.5 |
ID = 51A |
2.0 |
|
1.5 |
|
1.0 |
|
0.5
VGS=10V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91292 |
www.vishay.com |
S11-0517-Rev. B, 21-Mar-11 |
3 |
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000