Vishay IRFZ40, SiHFZ40 Data Sheet

IRFZ40, SiHFZ40

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)		60
RDS(on) ( )	VGS = 10 V		0.028
Qg (Max.) (nC)		67
Qgs (nC)		18
Qgd (nC)		25
Configuration		Single

TO-220AB

D S

N-Channel MOSFET

FEATURES

• Dynamic dV/dt Rating

• 175 °C Operating Temperature

• Fast Switching

•Ease of Paralleling

•Simple Drive Requirements

•Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220AB package is universially preferred for commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

ORDERING INFORMATION
Package		TO-220AB

Lead (Pb)-free		IRFZ40PbF

		SiHFZ40-E3
		SiHFZ40-E3

SnPb		IRFZ40
SnPb		SiHFZ40
		SiHFZ40

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER			SYMBOL	LIMIT		UNIT

Drain-Source Voltage			VDS	60		V
Gate-Source Voltage			VGS	± 20		V
Gate-Source Voltage			VGS	± 20
Continuous Drain Currente	VGS at 10 V	TC = 25 °C	ID	50
Continuous Drain Current	VGS at 10 V	TC = 100 °C	ID	36		A
Continuous Drain Current		TC = 100 °C		36		A
Pulsed Drain Currenta			IDM	200
Linear Derating Factor				1.0		W/°C

Single Pulse Avalanche Energyb			EAS	100		mJ
Maximum Power Dissipation	TC = 25 °C		PD	150		W
Peak Diode Recovery dV/dtc			dV/dt	4.5		V/ns
Operating Junction and Storage Temperature Range			TJ, Tstg	- 55 to + 175		°C
Soldering Recommendations (Peak Temperature)d	for 10 s			300		°C
Soldering Recommendations (Peak Temperature)d	for 10 s			300
Mounting Torque	6-32 or M3 screw			10		lbf · in

				1.1		N · m
				1.1		N · m

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 44 μH, Rg = 25 , IAS = 51 A (see fig. 12).
c. ISD 51 A, dI/dt 250 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
e. Current limited by the package, (die current = 51 A).
* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91385					www.vishay.com
S11-0520-Rev. B, 21-Mar-11					1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFZ40, SiHFZ40

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER	SYMBOL	TYP.	MAX.	UNIT

Maximum Junction-to-Ambient	RthJA	-	62
Case-to-Sink, Flat, Greased Surface	RthCS	0.50	-	°C/W
Maximum Junction-to-Case (Drain)	RthJC	-	1.0

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

VDS Temperature Coefficient

VDS/TJ

Reference to 25 °C, ID = 1 mA

0.060

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.0

4.0

Gate-Source Leakage

IGSS

VGS = ± 20 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 60 V, VGS = 0 V

μA

VDS = 48 V, VGS = 0 V, TJ = 125 °C

250

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 31 Ab

0.028

Forward Transconductance

gfs

VDS = 25 V, ID = 31 A

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

1900

Output Capacitance

Coss

VDS = 25 V,

920

f = 1.0 MHz, see fig. 5

Reverse Transfer Capacitance

Crss

170

Total Gate Charge

VGS = 10 V

ID = 51 A, VDS = 48 V,

Gate-Source Charge

Qgs

see fig. 6 and 13b

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

Rise Time

VDD = 30 V, ID = 51 A,

110

Turn-Off Delay Time

td(off)

Rg = 9.1 , RD = 0.55 , see fig. 10b

Fall Time

Internal Drain Inductance

Between lead,

4.5

6 mm (0.25") from

Internal Source Inductance

package and center of

7.5

die contact

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

Pulsed Diode Forward Currenta

ISM

integral reverse

200

p - n junction diode

Body Diode Voltage

VSD

TJ = 25 °C, IS = 51 A, VGS = 0 Vb

2.5

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 51 A, dI/dt = 100 A/ s

120

180

Body Diode Reverse Recovery Charge

Qrr

0.53

0.80

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width 300 μs; duty cycle 2 %.

www.vishay.com	Document Number: 91385
2	S11-0520-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFZ40, SiHFZ40

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics, TC = 25 °C						Fig. 1 - Typical Transfer Characteristics
Fig. 1 - Typical Output Characteristics, TC = 25 °C						Fig. 1 - Typical Transfer Characteristics

Fig. 2 - Typical Output Characteristics, TC = 175 °C	Fig. 2 - Normalized On-Resistance vs. Temperature

Document Number: 91385	www.vishay.com
S11-0520-Rev. B, 21-Mar-11	3

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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