Vishay IRFZ40, SiHFZ40 Data Sheet

Power MOSFET

TO-220AB

G

D

S

IRFZ40, SiHFZ40

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 60

R

()V

DS(on)

Q

(Max.) (nC) 67

g

Q

(nC) 18

gs

Q

(nC) 25

gd

Configuration Single

= 10 V 0.028

GS

D

FEATURES

• Dynamic dV/dt Rating

• 175 °C Operating Temperature

•Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and

G

cost-effectiveness.
The TO-220AB package is universially preferred for
commercial-industrial applications at power dissipation

S

N-Channel MOSFET

levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free

SnPb

IRFZ40PbF

SiHFZ40-E3

IRFZ40

SiHFZ40

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

Continuous Drain Current

Pulsed Drain Current

a

e

VGS at 10 V

= 25 °C

T

C

= 100 °C 36

C

DS

± 20

GS

I

D

IDM 200

Linear Derating Factor 1.0 W/°C

Single Pulse Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range T

Soldering Recommendations (Peak Temperature)

b

= 25 °C P

C

c

d

for 10 s 300

E

AS

D

dV/dt 4.5 V/ns

, T

J

stg

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= 25 V, starting TJ = 25 °C, L = 44 μH, Rg = 25 , IAS = 51 A (see fig. 12).

DD

c. I

 51 A, dI/dt  250 A/μs, VDD  VDS, TJ  175 °C.

SD

d. 1.6 mm from case.
e. Current limited by the package, (die current = 51 A).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91385 www.vishay.com
S11-0520-Rev. B, 21-Mar-11 1

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

60

50

100 mJ

150 W

- 55 to + 175

10 lbf · in

1.1 N · m

www.vishay.com/doc?91000

V

AContinuous Drain Current T

°C

IRFZ40, SiHFZ40

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.060 - V/°C

V

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.

DS

GS(th)

V

GSS

DSS

VGS = 10 V ID = 31 A

DS(on)

fs

iss

- 920 -

oss

- 170 -

rss

g

--18

gs

--

gd

d(on)

r

-45-

d(off)

-92-

f

D

V

V

GS

R

Between lead,
6 mm (0.25") from
package and center of

S

S

I

SM

SD

rr

rr

on

die contact

MOSFET symbol
showing the

integral reverse
p - n junction diode

TJ = 25 °C, IF = 51 A, dI/dt = 100 A/s

-62

0.50 -

°C/WCase-to-Sink, Flat, Greased Surface R

-1.0

VGS = 0 V, ID = 250 μA 60 - - V

VDS = VGS, ID = 250 μA 2.0 - 4.0 V

= ± 20 V - - ± 100 nA

GS

VDS = 60 V, VGS = 0 V - - 25

= 48 V, VGS = 0 V, TJ = 125 °C - - 250

DS

b

- - 0.028 

VDS = 25 V, ID = 31 A 15 - - S

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

- 1900 -

--67

= 51 A, VDS = 48 V,

I

= 10 V

D

see fig. 6 and 13

b

25

-14-

V

= 30 V, ID = 51 A,

DD

= 9.1 , RD = 0.55 , see fig. 10

g

G

G

TJ = 25 °C, IS = 51 A, VGS = 0 V

b

D

S

D

S

b

- 110 -

-4.5-

-7.5-

--50

- - 200

--2.5V

- 120 180 ns

- 0.53 0.80 nC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

μA

pFOutput Capacitance C

nC

ns

nH

A

www.vishay.com Document Number: 91385
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This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

IRFZ40, SiHFZ40

Vishay Siliconix

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, T

= 175 °C

C

Fig. 1 - Typical Transfer Characteristics

Fig. 2 - Normalized On-Resistance vs. Temperature

Document Number: 91385 www.vishay.com
S11-0520-Rev. B, 21-Mar-11 3

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

IRFZ40, SiHFZ40

Vishay Siliconix

Fig. 3 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 4 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 5 - Typical Source-Drain Diode Forward Voltage

Fig. 3 - Maximum Safe Operating Area

www.vishay.com Document Number: 91385
4 S11-0520-Rev. B, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

IRFZ40, SiHFZ40

V

DS

90 %

10 %

V

GS

t

d(on)

t

r

t

d(off)

t

f

R

G

I

AS

0.01 Ω

t

p

D.U.T.

L

V

DS

+

-

V

DD

10 V

Var y tp to obtain
required I

AS

I

AS

V

DS

V

DD

V

DS

t

p

Vishay Siliconix

R

D.U.T.

D

+

-

V

DS

V

GS

R

G

10 V

Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

Fig. 10a - Switching Time Test Circuit

V

DD

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig. 10b - Switching Time Waveforms

Document Number: 91385 www.vishay.com
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THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 12a - Unclamped Inductive Test Circuit

Fig. 12b - Unclamped Inductive Waveforms

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

IRFZ40, SiHFZ40

D.U.T.

3 mA

V

GS

V

DS

I

G

I

D

0.3 µF

0.2 µF

50 kΩ

12 V

Current regulator

Current sampling resistors

Same type as D.U.T.

+

-

Vishay Siliconix

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Q

10 V

V

Q

GS

G

G

Q

GD

Charge

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test

www.vishay.com Document Number: 91385
6 S11-0520-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Peak Diode Recovery dV/dt Test Circuit

IRFZ40, SiHFZ40

Vishay Siliconix

D.U.T.

+

-

R

g

Driver gate drive

P.W.

+

-

Period

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

• dV/dt controlled by R

• Driver same type as D.U.T.

•

I

controlled by duty factor “D”

SD

• D.U.T. - device under test

-

D =

g

P.W.

Period

+

+

V

DD

-

V

= 10 Va

GS

D.U.T. l

waveform

SD

Reverse
recovery
current

Re-applied
voltage

D.U.T. V

Inductor current

Note

a. V

waveform

DS

= 5 V for logic level devices

GS

Body diode forward

current

dI/dt

Diode recovery

dV/dt

Body diode forward drop

Ripple ≤ 5 %

V

DD

I

SD

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see www.vishay.com/ppg?91385

.

Document Number: 91385 www.vishay.com
S11-0520-Rev. B, 21-Mar-11 7

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

www.vishay.com

M

*

3

2

1

L

L(1)

D

H(1)

Q

Ø P

A

F

J(1)

b(1)

e(1)

e

E

b

C

Package Information

Vishay Siliconix

TO-220-1

DIM.

A 4.24 4.65 0.167 0.183

b 0.69 1.02 0.027 0.040

b(1) 1.14 1.78 0.045 0.070

c 0.36 0.61 0.014 0.024

D 14.33 15.85 0.564 0.624

E 9.96 10.52 0.392 0.414

e 2.41 2.67 0.095 0.105

e(1) 4.88 5.28 0.192 0.208

F 1.14 1.40 0.045 0.055

H(1) 6.10 6.71 0.240 0.264

J(1) 2.41 2.92 0.095 0.115

L 13.36 14.40 0.526 0.567

L(1) 3.33 4.04 0.131 0.159

Ø P 3.53 3.94 0.139 0.155

Q 2.54 3.00 0.100 0.118

ECN: X15-0364-Rev. C, 14-Dec-15
DWG: 6031

Note

• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM

MILLIMETERS INCHES

MIN. MAX. MIN. MAX.

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Revison: 14-Dec-15

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ASE Xi’an

For technical questions, contact: [e-mail]

Package Picture

1

Document Number: 66542

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Revision: 13-Jun-16

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Document Number: 91000