Vishay IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Data Sheet
N-Channel MOSFET
G
D
S
D2PAK (TO-263)
G
D
S
I2PAK (TO-262)
G
D
S
IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) 60
()V
R
DS(on)
Q
(Max.) (nC) 46
g
Q
(nC) 11
gs
Q
(nC) 22
gd
Configuration Single
= 10 V 0.050
GS
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Advanced Process Technology
• Surface Mount
• Low-Profile Through-Hole (IRFZ34L, SiHFZ34L)
• 175 °C Operating Temperature
•Fast Switching
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
2
The D
PAKis a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
2
D
PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2 W in a typical surface mount application.
The through-hole version (IRFZ34L, SiHFZ34L) is available
for low-profile applications.
ORDERING INFORMATION
Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262)
Lead (Pb)-free and Halogen-free - - SiHFZ34STRL-GE3 -
Lead (Pb)-free
Note
a. See device orientation.
IRFZ34SPbF IRFZ34STRRPbF
SiHFZ34S-E3 SiHFZ34STRPbF
a
a
IRFZ34STRLPbF
SiHFZ34STLPbF
a
a
IRFZ34LPbF
SiHFZ34L-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
Linear Derating Factor 0.59 W/°C
Single Pulse Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak Temperature) for 10 s 300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 25 V, Starting TJ = 25 °C, L = 260 μH, Rg = 25 , IAS = 30 A (see fig. 12).
DD
30 A, dI/dt 200 A/μs, VDD VDS, TJ 175 °C.
c. I
SD
d. 1.6 mm from case.
e. Uses IRFZ34, SiHFZ34 data and test conditions.
a, e
b, e
c, e
at 10 V
GS
C
= 100 °C 21
T
C
T
= 25 °C
C
= 25 °C 3.7
T
A
DS
± 20
GS
I
D
IDM 120
E
AS
P
D
dV/dt 4.5 V/ns
, T
J
stg
60
30
200 mJ
88
- 55 to + 175
d
V
A
W
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90368
S11-1045-Rev. C, 30-May-11 1
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This document is subject to change without notice.
www.vishay.com
www.vishay.com/doc?91000
IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient
(PCB Mount)
a
Maximum Junction-to-Case (Drain) R
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
R
thJA
thJC
DS
GS(th)
V
GSS
-40
°C / W
-1.7
VGS = 0 V, ID = 250 μA 60 - - V
c
- 0.065 - V/°C
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
= ± 20 V - - ± 100 nA
GS
VDS = 60 V, VGS = 0 V - - 25
DSS
VGS = 10 V ID = 18 A
DS(on)
fs
iss
- 600 -
oss
- 100 -
rss
g
--11
gs
--22
gd
d(on)
r
-29-
d(off)
-52-
f
V
= 48 V, VGS = 0 V, TJ = 150 °C - - 250
DS
VDS = 25 V, ID = 18 A
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
b
b
c
- - 0.05
9.3 - - S
- 1200 -
--46
= 30 A, VDS = 48 V,
I
V
GS
= 10 V
D
see fig. 6 and 13
b, c
-13-
V
= 30 V, ID = 30 A,
R
DD
= 12 , RD = 1.0 , see fig. 10
g
b, c
- 100 -
μA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
Internal Source Inductance L
S
Between lead, and center of die contact - 7.5 - nH
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
MOSFET symbol
showing the
integral reverse
I
SM
SD
rr
rr
on
p - n junction diode
TJ = 25 °C, IS = 30 A, VGS = 0 V
TJ = 25 °C, IF = 30 A, dI/dt = 100 A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
D
G
S
b
b, c
--30
A
- - 120
--1.6V
- 120 230 ns
- 700 1400 μC
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Uses IRFZ34, SiHFZ34 data and test conditions.
www.vishay.com Document Number: 90368
2 S11-1045-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 90368 www.vishay.com
S11-1045-Rev. C, 30-May-11 3
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This document is subject to change without notice.
www.vishay.com/doc?91000
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