Vishay IRFR420A, IRFU420A, SiHFR420A, SiHFU420A Data Sheet

IRFR420A, IRFU420A, SiHFR420A, SiHFU420A

www.vishay.com	Vishay Siliconix
	Power MOSFET

PRODUCT SUMMARY

VDS (V)	500
RDS(on) ( )	VGS = 10 V		3.0
Qg max. (nC)	17
Qgs (nC)	4.3
Qgd (nC)	8.5
Configuration	Single

D

	DPAK	IPAK
	(TO-252)	(TO-251)
	D	D
				G
	G	S	D	S
		G
				S
				N-Channel MOSFET

FEATURES

• Low gate Charge Qg results in simple drive requirement

• Improved gate, avalanche and dynamic dV/dt ruggedness

• Fully characterized capacitance and Available avalanche voltage and current

•Effective Coss specified

•Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

APPLICATIONS

•Switch mode power supply (SMPS)

•Uninterruptible power supply

•High speed power switching

ORDERING INFORMATION

Package	DPAK (TO-252)	DPAK (TO-252)	DPAK (TO-252)	IPAK (TO-251)
Lead (Pb)-free and Halogen-free	SiHFR420A-GE3	SiHFR420ATR-GE3 a	SiHFR420ATRL-GE3	SiHFU420A-GE3
Lead (Pb)-free	IRFR420APbF	IRFR420ATRPbF a	IRFR420ATRLPbF	IRFU420APbF

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER				SYMBOL	LIMIT	UNIT
Drain-Source Voltage				VDS	500	V
Gate-Source Voltage				VGS	± 30
Continuous Drain Current		VGS at 10 V	TC = 25 °C	ID	3.3
			TC = 100 °C		2.1	A
Pulsed Drain Current a				IDM	10
Linear Derating Factor					0.67	W/°C
Single Pulse Avalanche Energy b				EAS	140	mJ
Repetitive Avalanche Current a				IAR	2.5	A
Repetitive Avalanche Energy a				EAR	5.0	mJ
Maximum Power Dissipation		TC = 25 °C		PD	83	W
Peak Diode Recovery dV/dt c				dV/dt	3.4	V/ns
Operating Junction and Storage Temperature Range				TJ, Tstg	-55 to +150	°C
Soldering Recommendations (Peak temperature) d		for 10 s			300

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Starting TJ = 25 °C, L = 45 mH, Rg = 25 , IAS = 2.5 A (see fig. 12).

c.ISD 2.5 A, dI/dt 270 A/μs, VDD VDS, TJ 150 °C.

d.1.6 mm from case.

S16-1522-Rev. D, 08-Aug-16	1	Document Number: 91274
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFR420A, IRFU420A, SiHFR420A, SiHFU420A

www.vishay.com				Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER	SYMBOL	TYP.	MAX.	UNIT
Maximum Junction-to-Ambient	RthJA	-	62
Case-to-Sink, Flat, Greased Surface	RthCS	0.50	-	°C/W
Maximum Junction-to-Case (Drain)	RthJC	-	1.5

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER		SYMBOL	TEST CONDITIONS											MIN.	TYP.	MAX.	UNIT
Static
Drain-Source Breakdown Voltage		VDS	VGS = 0 V, ID = 250 μA											500	-	-	V
VDS Temperature Coefficient		VDS/TJ	Reference to 25 °C, ID = 1 mA											-	0.60	-	V/°C
Gate-Source Threshold Voltage		VGS(th)	VDS = VGS, ID = 250 μA											2.0	-	4.5	V
Gate-Source Leakage		IGSS	VGS = ± 30 V											-	-	± 100	nA
Zero Gate Voltage Drain Current		IDSS	VDS = 500 V, VGS = 0 V											-	-	25	μA
			VDS = 400 V, VGS = 0 V, TJ = 125 °C											-	-	250
Drain-Source On-State Resistance		RDS(on)	VGS = 10 V				ID = 1.5 A b							-	-	3.0
Forward Transconductance		gfs	VDS = 50 V, ID = 1.5 A											1.4	-	-	S
Dynamic
Input Capacitance		Ciss		VGS = 0 V,										-	340	-
Output Capacitance		Coss		VDS = 25 V,										-	53	-	pF
			f = 1.0 MHz, see fig. 5
Reverse Transfer Capacitance		Crss												-	2.7	-
Output Capacitance		Coss				VDS = 1.0 V, f = 1.0 MHz								-	490	-
			VGS = 0 V		VDS = 400 V, f = 1.0 MHz									-	15	-	pF
Effective Output Capacitance		Coss eff.					VDS = 0 V to 400 V c							-	28	-
Total Gate Charge		Qg				ID = 2.5 A, VDS = 400 V,								-	-	17
Gate-Source Charge		Qgs	VGS = 10 V											-	-	4.3	nC
							see fig. 6 and 13 b
Gate-Drain Charge		Qgd												-	-	8.5
Turn-On Delay Time		td(on)												-	8.1	-
Rise Time		tr	VDD = 250 V, ID = 2.5 A,											-	12	-	ns
Turn-Off Delay Time		td(off)	R = 21 , R		D		= 97 , see fig. 10 b							-	16	-
			g
Fall Time		tf												-	13	-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current		IS	MOSFET symbol										D	-	-	3.3
			showing the														A
			integral reverse				G
Pulsed Diode Forward Current a		I												-	-	10
			p - n junction diode
		SM											S
Body Diode Voltage		VSD	TJ = 25 °C, IS = 2.5 A, VGS = 0 V b											-	-	1.6	V
Body Diode Reverse Recovery Time		trr	TJ = 25 °C, IF = 2.5 A, dI/dt = 100 A/μs b											-	330	500	ns
Body Diode Reverse Recovery Charge		Qrr												-	760	1140	μC
Forward Turn-On Time		ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width 300 μs; duty cycle 2 %.

c.Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.

S16-1522-Rev. D, 08-Aug-16	2	Document Number: 91274
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFR420A, IRFU420A, SiHFR420A, SiHFU420A

www.vishay.com	Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

	10	VGS
	TOP	15V
<![if ! IE]> <![endif]>(A)		10V
		8.0V
		7.0V
<![if ! IE]> <![endif]>Current		6.0V
		5.5V
		5.0V
	BOTTOM 4.5V
	1
<![if ! IE]> <![endif]>-to-Source
<![if ! IE]> <![endif]>Drain	0.1		4.5V
<![if ! IE]> <![endif]>,
<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>I
			20μs PULSE WIDTH
	0.01		TJ= 25 °C
		1	10	100
	0.1

VDS , Drain-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics

	10	VGS
	TOP	15V
<![if ! IE]> <![endif]>(A)		10V
		8.0V
		7.0V
<![if ! IE]> <![endif]>Current		6.0V
		5.5V
		5.0V
	BOTTOM 4.5V
<![if ! IE]> <![endif]>Drain-to-Source	1
		4.5V
<![if ! IE]> <![endif]>,
<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>I

20μs PULSE WIDTH

TJ= 150 °C

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics

	10
<![if ! IE]> <![endif]>(A)	T = 150°C
<![if ! IE]> <![endif]>Current	J
	1
<![if ! IE]> <![endif]>Source	TJ = 25°C
<![if ! IE]> <![endif]>-to-
<![if ! IE]> <![endif]>, Drain	0.1
<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>I
	VDS= 50V

20μs PULSE WIDTH 0.01

		4.0					5.0								6.0				7.0				8.0										9.0
										VGS, Gate-to-Source Voltage (V)
		Fig. 3 - Typical Transfer Characteristics
		3.0
<![if ! IE]> <![endif]>Resistance				I	D			=	2.5A
		2.5
<![if ! IE]> <![endif]>Source-to-DrainOn
	<![if ! IE]> <![endif]>(Normalized)	2.0
		1.5
<![if ! IE]> <![endif]>,		1.0
<![if ! IE]> <![endif]>DS(on)		0.5
<![if ! IE]> <![endif]>R		0.0																						V		GS		=		10V
							-40 -20 0								20 40				60 80				100 120 140 160
		-60

TJ, Junction Temperature ( °C)

Fig. 4 - Normalized On-Resistance vs. Temperature

S16-1522-Rev. D, 08-Aug-16	3	Document Number: 91274
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFR420A, IRFU420A, SiHFR420A, SiHFU420A

		www.vishay.com
	10 000	VGS = 0V,		f = 1 MHz
		C	= C	+ C	,	C	shorted
		iss	gs	gd		ds
		C	= C
		rss	gd
	1000	Coss = Cds+ Cgd
<![if ! IE]> <![endif]>p)F			Ciss
<![if ! IE]> <![endif]>(
<![if ! IE]> <![endif]>nec
<![if ! IE]> <![endif]>at	100
<![if ! IE]> <![endif]>capi
			Coss
<![if ! IE]> <![endif]>Ca C,
	10
			Crss
	1
	1	10			100		1000
		VDS , Drain-to-Source Voltage (V)

Vishay Siliconix

	10
<![if ! IE]> <![endif]>(A)
<![if ! IE]> <![endif]>Drain Current		T = 150°C
		J
	1
<![if ! IE]> <![endif]>, Reverse			T = 25°C
			J
<![if ! IE]> <![endif]>SD
<![if ! IE]> <![endif]>I
	0.1			VGS = 0 V
		0.6	0.8	1.0	1.2
	0.4

VSD ,Source-to-Drain Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

	20	ID = 2.5A		VDS= 400V
<![if ! IE]> <![endif]>(V)
				VDS= 250V
				VDS= 100V
<![if ! IE]> <![endif]>Voltage
	15
<![if ! IE]> <![endif]>, Gate-to-Source	10
	5
<![if ! IE]> <![endif]>GS
<![if ! IE]> <![endif]>V
				FOR TEST CIRCUIT
	0			SEE FIGURE 13
		4	8	12	16
	0

QG, Total Gate Charge (nC)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

	100
	OPERATION IN THIS AREA LIMITED
			BY RDS(on)
<![if ! IE]> <![endif]>(A)	10		10us
<![if ! IE]> <![endif]>Current
			100us
<![if ! IE]> <![endif]>, Drain
	1
<![if ! IE]> <![endif]>D			1ms
<![if ! IE]> <![endif]>I
	TC = 25°C		10ms
	TJ = 150°C
	Single Pulse
	0.1	100	1000	10000
	10

VDS, Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area

S16-1522-Rev. D, 08-Aug-16	4	Document Number: 91274
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000