Vishay IRFR420, IRFU420, SiHFR420, SiHFU420 Data Sheet
www.vishay.com
IRFR420, IRFU420, SiHFR420, SiHFU420
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) 500
R
()V
DS(on)
Q
max. (nC) 19
g
Q
(nC) 3.3
gs
Q
(nC) 13
gd
Configuration Single
DPAK
(TO-252)
D
IPAK
(TO-251)
D
= 10 V 3.0
GS
G
D
FEATURES
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Surface mount (IRFR420, SiHFR420)
• Straight lead (IRFU420, SiHFU420)
• Available in tape and reel
• Fast switching
• Ease of paralleling
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
S
G
S
D
G
N-Channel MOSFET
S
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)
Lead (Pb)-free and Halogen-free SiHFR420-GE3 SiHFR420TR-GE3
Lead (Pb)-free IRFR420PbF IRFR420TRPbF
Note
a. See device orientation.
a
SiHFR420TRL-GE3 aSiHFR420TRR-GE3 aSiHFU420-GE3
a
IRFR420TRLPbF a IRFR420TRRPbF a IRFU420PbF
Available
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
= 100 °C 1.5
C
DS
± 20
GS
I
D
IDM 8.0
Linear Derating Factor 0.33
Linear Derating Factor (PCB mount)
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Maximum Power Dissipation (PCB mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak temperature)
e
b
a
a
= 25 °C
e
c
d
C
TA = 25 °C 2.5
for 10 s 260
E
AS
I
AR
E
AR
P
D
dV/dt 3.5 V/ns
, T
J
stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 50 V, starting TJ = 25 °C, L = 124 mH, Rg = 25 , IAS = 2.4 A (see fig. 12).
DD
c. I
2.4 A, dI/dt 50 A/μs, VDD VDS, TJ 150 °C.
SD
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
S16-1522-Rev. E, 08-Aug-16
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
500
2.4
0.020
400 mJ
2.4 A
4.2 mJ
42
-55 to +150
Document Number: 91275
V
AT
W/°C
W
°C
IRFR420, IRFU420, SiHFR420, SiHFU420
D
S
G
S
D
G
www.vishay.com
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP MAX. UNIT
Maximum Junction-to-Ambient R
a
Maximum Junction-to-Case (Drain) R
thJA
R
thJA
thJC
- 110
-50
-3.0
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.59 - V/°C
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
DS
GS(th)
V
GSS
DSS
VGS = 10 V ID =1.4 A
DS(on)
fs
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
iss
-92-
oss
-37-
rss
g
--3.3
gs
--13
gd
d(on)
r
-33-
d(off)
-16-
f
D
Between lead,
6 mm (0.25") from
package and center of
Internal Source Inductance L
S
die contact
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
I
SM
SD
rr
rr
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IF = 2.1 A, dI/dt = 100 A/μs
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
VGS = 0 V, ID = 250 μA 500 - - V
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
= ± 20 V - - ± 100 nA
GS
VDS = 500 V, VGS = 0 V - - 25
= 400 V, VGS = 0 V, TJ = 125 °C - - 250
V
DS
b
VDS = 50 V, ID = 1.4 A 1.5 - - S
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
= 2.1 A, VDS = 400 V,
I
= 10 V
V
GS
V
R
= 18 , RD = 120 , see fig. 10
g
TJ = 25 °C, IS = 2.4 A, VGS = 0 V
D
see fig. 6 and 13
= 250 V, ID = 2.1 A,
DD
b
b
b
b
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Vishay Siliconix
°C/WMaximum Junction-to-Ambient (PCB mount)
--3.0
- 360 -
--19
-8.0-
-8.6-
-4.5-
-7.5-
--2.4
--8.0
--1.6V
- 260 520 ns
-0.701.4μC
μA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
A
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: hvm@vishay.com
S16-1522-Rev. E, 08-Aug-16
2
Document Number: 91275
IRFR420, IRFU420, SiHFR420, SiHFU420
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, T
= 150 °C
C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
S16-1522-Rev. E, 08-Aug-16
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
Document Number: 91275
www.vishay.com
IRFR420, IRFU420, SiHFR420, SiHFU420
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
S16-1522-Rev. E, 08-Aug-16
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
4
Document Number: 91275
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