Vishay IRFR420, IRFU420, SiHFR420, SiHFU420 Data Sheet

IRFR420, IRFU420, SiHFR420, SiHFU420

www.vishay.com	Vishay Siliconix
	Power MOSFET

PRODUCT SUMMARY

VDS (V)	500
RDS(on) ( )	VGS = 10 V		3.0
Qg max. (nC)	19
Qgs (nC)	3.3
Qgd (nC)	13
Configuration	Single

D

	DPAK	IPAK
	(TO-252)	(TO-251)
	D	D
				G
	G	S	D	S
		G
				S
				N-Channel MOSFET

FEATURES

• Dynamic dV/dt rating

• Repetitive avalanche rated

• Surface mount (IRFR420, SiHFR420)

• Straight lead (IRFU420, SiHFU420)

Available

•Available in tape and reel

•Fast switching

•Ease of paralleling

•Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.

ORDERING INFORMATION

Package	DPAK (TO-252)	DPAK (TO-252)	DPAK (TO-252)	DPAK (TO-252)	IPAK (TO-251)
Lead (Pb)-free and Halogen-free	SiHFR420-GE3	SiHFR420TR-GE3 a	SiHFR420TRL-GE3 a	SiHFR420TRR-GE3 a	SiHFU420-GE3
Lead (Pb)-free	IRFR420PbF	IRFR420TRPbF a	IRFR420TRLPbF a	IRFR420TRRPbF a	IRFU420PbF

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER				SYMBOL	LIMIT	UNIT
Drain-Source Voltage				VDS	500	V
Gate-Source Voltage				VGS	± 20
Continuous Drain Current		VGS at 10 V	TC = 25 °C	ID	2.4
			TC = 100 °C		1.5	A
Pulsed Drain Current a				IDM	8.0
Linear Derating Factor					0.33	W/°C
Linear Derating Factor (PCB mount) e					0.020
Single Pulse Avalanche Energy b				EAS	400	mJ
Repetitive Avalanche Current a				IAR	2.4	A
Repetitive Avalanche Energy a				EAR	4.2	mJ
Maximum Power Dissipation		TC = 25 °C		PD	42	W
Maximum Power Dissipation (PCB mount) e		TA = 25 °C			2.5
Peak Diode Recovery dV/dt c				dV/dt	3.5	V/ns
Operating Junction and Storage Temperature Range				TJ, Tstg	-55 to +150	°C
Soldering Recommendations (Peak temperature) d		for 10 s			260

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.VDD = 50 V, starting TJ = 25 °C, L = 124 mH, Rg = 25 , IAS = 2.4 A (see fig. 12).

c.ISD 2.4 A, dI/dt 50 A/μs, VDD VDS, TJ 150 °C.

d.1.6 mm from case.

e.When mounted on 1" square PCB (FR-4 or G-10 material).

S16-1522-Rev. E, 08-Aug-16	1	Document Number: 91275
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFR420, IRFU420, SiHFR420, SiHFU420

www.vishay.com				Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER	SYMBOL	TYP	MAX.		UNIT
Maximum Junction-to-Ambient	RthJA	-	110
Maximum Junction-to-Ambient (PCB mount) a	RthJA	-	50		°C/W
Maximum Junction-to-Case (Drain)	RthJC	-	3.0

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER		SYMBOL	TEST CONDITIONS								MIN.	TYP.	MAX.	UNIT
Static
Drain-Source Breakdown Voltage		VDS	VGS = 0 V, ID = 250 μA								500	-	-	V
VDS Temperature Coefficient		VDS/TJ	Reference to 25 °C, ID = 1 mA								-	0.59	-	V/°C
Gate-Source Threshold Voltage		VGS(th)	VDS = VGS, ID = 250 μA								2.0	-	4.0	V
Gate-Source Leakage		IGSS		VGS = ± 20 V							-	-	± 100	nA
Zero Gate Voltage Drain Current		IDSS	VDS = 500 V, VGS = 0 V								-	-	25	μA
			VDS = 400 V, VGS = 0 V, TJ = 125 °C								-	-	250
Drain-Source On-State Resistance		RDS(on)	VGS = 10 V			ID =1.4 A b					-	-	3.0
Forward Transconductance		gfs	VDS = 50 V, ID = 1.4 A								1.5	-	-	S
Dynamic
Input Capacitance		Ciss			VGS = 0 V,						-	360	-
Output Capacitance		Coss			VDS = 25 V,						-	92	-	pF
			f = 1.0 MHz, see fig. 5
Reverse Transfer Capacitance		Crss									-	37	-
Total Gate Charge		Qg									-	-	19
					ID = 2.1 A, VDS = 400 V,
Gate-Source Charge		Qgs	VGS = 10 V								-	-	3.3	nC
					see fig. 6 and 13 b
Gate-Drain Charge		Qgd									-	-	13
Turn-On Delay Time		td(on)									-	8.0	-
Rise Time		tr	VDD = 250 V, ID = 2.1 A,								-	8.6	-	ns
Turn-Off Delay Time		td(off)	Rg = 18 , RD = 120 , see fig. 10 b								-	33	-
Fall Time		tf									-	16	-
Internal Drain Inductance		LD	Between lead,						D		-	4.5	-
			6 mm (0.25") from
Internal Source Inductance		LS	package and center of			G					-	7.5	-	nH
			die contact						S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current		IS	MOSFET symbol							D	-	-	2.4
			showing the											A
			integral reverse			G
Pulsed Diode Forward Current a		I									-	-	8.0
			p - n junction diode
		SM								S
Body Diode Voltage		VSD	TJ = 25 °C, IS = 2.4 A, VGS = 0 V b								-	-	1.6	V
Body Diode Reverse Recovery Time		trr	TJ = 25 °C, IF = 2.1 A, dI/dt = 100 A/μs b								-	260	520	ns
Body Diode Reverse Recovery Charge		Qrr									-	0.70	1.4	μC
Forward Turn-On Time		ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width 300 μs; duty cycle 2 %.

S16-1522-Rev. E, 08-Aug-16	2	Document Number: 91275
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFR420, IRFU420, SiHFR420, SiHFU420

www.vishay.com	Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

	Fig. 1 - Typical Output Characteristics, TC = 25 °C				Fig. 3 - Typical Transfer Characteristics

Fig. 2 - Typical Output Characteristics, TC = 150 °C

Fig. 4 - Normalized On-Resistance vs. Temperature

S16-1522-Rev. E, 08-Aug-16	3	Document Number: 91275
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFR420, IRFU420, SiHFR420, SiHFU420

www.vishay.com	Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage		Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 8 - Maximum Safe Operating Area

S16-1522-Rev. E, 08-Aug-16	4	Document Number: 91275
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000