Vishay IRFR224, IRFU224, SiHFR224, SiHFU224 Data Sheet

IRFR224, IRFU224, SiHFR224, SiHFU224

www.vishay.com	Vishay Siliconix
	Power MOSFET

PRODUCT SUMMARY

VDS (V)		250
RDS(on) ( )	VGS = 10 V	1.1
Qg (Max.) (nC)		14
Qgs (nC)		2.7
Qgd (nC)		7.8
Configuration		Single
		D
DPAK	IPAK
(TO-252)	(TO-251)
D	D
	G
S	D S
G

G

S

N-Channel MOSFET

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Surface Mount (IRFR224, SiHFR224)

• Straight Lead (IRFU224, SiHFU224)

•Available in Tape and Reel

•Fast Switching

•Ease of Paralleling

•Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

DESCRIPTION

Third generation power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.

ORDERING INFORMATION

	Package	DPAK (TO-252)	DPAK (TO-252)	DPAK (TO-252)	IPAK (TO-251)
	Lead (Pb)-free and Halogen-free	SiHFR224-GE3	SiHFR224TR-GE3	SiHFR224TRL-GE3	SiHFU224-GE3
	Lead (Pb)-free	IRFR224PbF	IRFR224TRPbFa	IRFR224TRLPbFa	IRFU224PbF
		SiHFR224-E3	SiHFR224T-E3a	SiHFR224TL-E3a	SiHFU224-E3

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER				SYMBOL	LIMIT	UNIT
Drain-Source Voltage				VDS	250	V
Gate-Source Voltage				VGS	± 20
Continuous Drain Current		VGS at 10 V	TC = 25 °C	ID	3.8
			TC = 100 °C		2.4	A
Pulsed Drain Currenta				IDM	15
Linear Derating Factor					0.33	W/°C
Linear Derating Factor (PCB Mount)e					0.020
Single Pulse Avalanche Energyb				EAS	130	mJ
Repetitive Avalanche Currenta				IAR	3.8	A
Repetitive Avalanche Energya				EAR	4.2	mJ
Maximum Power Dissipation		TC = 25 °C		PD	42	W
Maximum Power Dissipation (PCB Mount)e		TA = 25 °C			2.5
Peak Diode Recovery dV/dtc				dV/dt	4.8	V/ns
Operating Junction and Storage Temperature Range				TJ, Tstg	- 55 to + 150	°C
Soldering Recommendations (Peak Temperature)d		for 10 s			260

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.VDD = 50 V; starting TJ = 25 °C, L = 14 mH, Rg = 25 , IAS = 3.8 A (see fig. 12).

c.ISD 3.8 A, dI/dt 90 A/μs, VDD VDS, TJ 150 °C.

d.1.6 mm from case.

e.When mounted on 1" square PCB (FR-4 or G-10 material).

S13-0165-Rev. C, 04-Feb-13	1	Document Number: 91271
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFR224, IRFU224, SiHFR224, SiHFU224

	www.vishay.com				Vishay Siliconix
	THERMAL RESISTANCE RATINGS
	PARAMETER	SYMBOL	TYP.	MAX.	UNIT
	Maximum Junction-to-Ambient	RthJA	-	50
	(PCB Mount)a
					°C/W
	Maximum Junction-to-Ambient	RthJA	-	110
	Maximum Junction-to-Case	RthJC	-	3.0

Note

a. When mounted on 1" square PCB ( FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

250

-

-

V

VDS Temperature Coefficient

VDS/TJ

Reference to 25 °C, ID = 1 mA

-

0.36

-

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.0

-

4.0

V

Gate-Source Leakage

IGSS

VGS = ± 20 V

-

-

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 250 V, VGS = 0 V

-

-

25

μA

VDS = 200 V, VGS = 0 V, TJ = 125 °C

-

-

250

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 2.3 Ab

-

-

1.1

Forward Transconductance

gfs

VDS = 50 V, ID = 2.3 Ab

1.5

-

-

S

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

-

260

-

Output Capacitance

Coss

pF

VDS = 25 V,

-

77

-

f = 1.0 MHz, see fig. 5c

Reverse Transfer Capacitance

Crss

-

15

-

Total Gate Charge

Qg

ID = 4.4 A, VDS = 200 V,

-

-

14

Gate-Source Charge

Qgs

VGS = 10 V

-

-

2.7

nC

b, c

see fig. 6 and 13

Gate-Drain Charge

Qgd

-

-

7.8

Turn-On Delay Time

td(on)

-

7.0

-

Rise Time

tr

VDD = 125 V, ID = 4.4 A,

-

13

-

ns

RG = 18 , RD = 28 ,

Turn-Off Delay Time

td(off)

-

20

-

b, c

see fig. 10

Fall Time

tf

-

12

-

Internal Drain Inductance

LD

Between lead,

D

-

4.5

-

6 mm (0.25") from

Internal Source Inductance

LS

package and center of

G

-

7.5

-

nH

die contact

S

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

MOSFET symbol

D

-

-

3.8

showing the

A

Pulsed Diode Forward Currenta

ISM

integral reverse

G

-

-

15

p - n junction diode

S

Body Diode Voltage

VSD

TJ = 25 °C, IS = 3.8 A, VGS = 0 Vb

-

-

1.8

V

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 4.4 A, dI/dt = 100 A/μsb

-

200

400

ns

Body Diode Reverse Recovery Charge

Qrr

-

0.93

1.9

μC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width 300 μs; duty cycle 2 %.

S13-0165-Rev. C, 04-Feb-13	2	Document Number: 91271
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

		IRFR224, IRFU224, SiHFR224, SiHFU224
	www.vishay.com	Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics, TC = 25 °C				Fig. 3 - Typical Transfer Characteristics

Fig. 2 - Typical Output Characteristics, TC = 150 °C

Fig. 4 - Normalized On-Resistance vs. Temperature

S13-0165-Rev. C, 04-Feb-13	3	Document Number: 91271
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFR224, IRFU224, SiHFR224, SiHFU224

www.vishay.com	Vishay Siliconix

					Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 8 - Maximum Safe Operating Area

S13-0165-Rev. C, 04-Feb-13	4	Document Number: 91271
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000