Vishay IRFR220, IRFU220, SiHFR220, SiHFU220 Data Sheet

IRFR220, IRFU220, SiHFR220, SiHFU220

www.vishay.com	Vishay Siliconix
	Power MOSFET

PRODUCT SUMMARY

VDS (V)	200
RDS(on) ( )	VGS = 10 V		0.80
Qg (Max.) (nC)	14
Qgs (nC)	3.0
Qgd (nC)	7.9
Configuration	Single

D

DPAK	IPAK
(TO-252)	(TO-251)
D	D
				G
G	S	D	S
	G			S
				N-Channel MOSFET

FEATURES

• Dynamic dV/dt rating

• Repetitive avalanche rated

• Surface mount (IRFR220, SiHFR220)

• Straight lead (IRFU220, SiHFU220)

• Available in tape and reel

Available

•Fast switching

•Ease of paralleling

•Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.

ORDERING INFORMATION

Package	DPAK (TO-252)	DPAK (TO-252)	DPAK (TO-252)	DPAK (TO-252)	IPAK (TO-251)
Lead (Pb)-free and Halogen-free	SiHFR220-GE3	SiHFR220TRL-GE3	-	-	SiHFU220-GE3
Lead (Pb)-free	IRFR220PbF	IRFR220TRLPbF a	IRFR220TRPbF a	IRFR220TRRPbF a	IRFU220PbF

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER				SYMBOL	LIMIT	UNIT
Drain-Source Voltage				VDS	200	V
Gate-Source Voltage				VGS	± 20
Continuous Drain Current		VGS at 10 V	TC = 25 °C	ID	4.8
			TC = 100 °C		3.0	A
Pulsed Drain Currenta				IDM	19
Linear Derating Factor					0.33	W/°C
Linear Derating Factor (PCB Mount) e					0.020
Single Pulse Avalanche Energy b				EAS	161	mJ
Repetitive Avalanche Current a				IAR	4.8	A
Repetitive Avalanche Energy a				EAR	4.2	mJ
Maximum Power Dissipation		TC = 25 °C		PD	42	W
Maximum Power Dissipation (PCB mount) e		TA = 25 °C			2.5
Peak Diode Recovery dV/dt c				dV/dt	5.0	V/ns
Operating Junction and Storage Temperature Range				TJ, Tstg	-55 to +150	°C
Soldering Recommendations (Peak temperature) d		for 10 s			260

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.VDD = 50 V, starting TJ = 25 °C, L = 14 mH, Rg = 25 , IAS = 4.8 A (see fig. 12).

c.ISD 5.2 A, dI/dt 95 A/μs, VDD VDS, TJ 150 °C.

d.1.6 mm from case.

e.When mounted on 1" square PCB (FR-4 or G-10 material).

S15-2678-Rev. F, 16-Nov-15	1	Document Number: 91270
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFR220, IRFU220, SiHFR220, SiHFU220

www.vishay.com					Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER	SYMBOL	MIN.	TYP.	MAX.		UNIT
Maximum Junction-to-Ambient	RthJA	-	-	110
Maximum Junction-to-Ambient	RthJA	-	-	50		°C/W
(PCB mount) a
Maximum Junction-to-Case (Drain)	RthJC	-	-	3.0

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER		SYMBOL	TEST CONDITIONS										MIN.	TYP.	MAX.	UNIT
Static
Drain-Source Breakdown Voltage		VDS	VGS = 0 V, ID = 250 μA										200	-	-	V
VDS Temperature Coefficient		VDS/TJ	Reference to 25 °C, ID = 1 mA										-	0.29	-	V/°C
Gate-Source Threshold Voltage		VGS(th)	VDS = VGS, ID = 250 μA										2.0	-	4.0	V
Gate-Source Leakage		IGSS		VGS = ± 20 V									-	-	± 100	nA
Zero Gate Voltage Drain Current		IDSS	VDS = 200 V, VGS = 0 V										-	-	25	μA
			VDS = 160 V, VGS = 0 V, TJ = 125 °C										-	-	250
Drain-Source On-State Resistance		RDS(on)	VGS = 10 V			ID = 2.9 A b							-	-	0.80
Forward Transconductance		gfs	VDS = 50 V, ID = 2.9 A b										1.7	-	-	S
Dynamic
Input Capacitance		Ciss			VGS = 0 V,								-	260	-
Output Capacitance		Coss			VDS = 25 V,								-	100	-	pF
			f = 1.0 MHz, see fig. 5
Reverse Transfer Capacitance		Crss											-	30	-
Total Gate Charge		Qg			ID = 4.8 A, VDS = 160 V,								-	-	14
Gate-Source Charge		Qgs	VGS = 10 V										-	-	3.0	nC
					see fig. 6 and 13 b
Gate-Drain Charge		Qgd											-	-	7.9
Turn-On Delay Time		td(on)											-	7.2	-
Rise Time		tr	VDD = 100 V, ID = 4.8 A,										-	22	-	ns
Turn-Off Delay Time		td(off)	RG = 18 , RD = 20 , see fig. 10 b										-	19	-
Fall Time		tf											-	13	-
Internal Drain Inductance		LD	Between lead,								D		-	4.5	-
			6 mm (0.25") from
Internal Source Inductance		LS	package and center of			G							-	7.5	-	nH
			die contact								S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current		IS	MOSFET symbol									D	-	-	4.8
			showing the
			integral reverse			G										A
Pulsed Diode Forward Current a		I	p - n junction diode										-	-	19
		SM										S
Body Diode Voltage		VSD	TJ = 25 °C, IS = 4.8 A, VGS = 0 V b										-	-	1.8	V
Body Diode Reverse Recovery Time		trr	TJ = 25 °C, IF = 4.8 A, dI/dt = 100 A/μs b										-	150	300	ns
Body Diode Reverse Recovery Charge		Qrr											-	0.91	1.8	μC
Forward Turn-On Time		ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width 300 μs; duty cycle 2 %.

S15-2678-Rev. F, 16-Nov-15	2	Document Number: 91270
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFR220, IRFU220, SiHFR220, SiHFU220

www.vishay.com	Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics, TC = 25 °C		Fig. 3 - Typical Transfer Characteristics

Fig. 2 - Typical Output Characteristics, TC = 150 °C

Fig. 4 - Normalized On-Resistance vs. Temperature

S15-2678-Rev. F, 16-Nov-15	3	Document Number: 91270
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFR220, IRFU220, SiHFR220, SiHFU220

www.vishay.com	Vishay Siliconix

					Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 8 - Maximum Safe Operating Area

S15-2678-Rev. F, 16-Nov-15	4	Document Number: 91270
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000