Vishay IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A Data Sheet

IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A

www.vishay.com	Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)		600
RDS(on) (Max.) ( )	VGS = 10 V		7.0
Qg (Max.) (nC)		14
Qgs (nC)		2.7
Qgd (nC)		8.1
Configuration		Single

FEATURES

•Low Gate Charge Qg Results in Simple Drive Requirement

• Improved Gate, Avalanche and Dynamic

dV/dt Ruggedness

• Fully Characterized Capacitance and

Avalanche Voltage and Current

•Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

			APPLICATIONS
DPAK	IPAK		• Switch Mode Power Supply (SMPS)
(TO-252)	(TO-251)		• Uninterruptible Power Supply
	D		• Uninterruptible Power Supply
D	D		• Power Factor Correction
D		G	• Power Factor Correction
		G

TYPICAL SMPS TOPOLOGIES

D S

• Low Power Single Transistor Flyback

N-Channel MOSFET

ORDERING INFORMATION

Package

DPAK (TO-252)

IPAK (TO-251)

Lead (Pb)-free and

SiHFR1N60A-GE3

SiHFR1N60ATRL-GE3a

SiHFR1N60ATR-GE3a

SiHFR1N60ATRR-GE3a

SiHFU1N60A-GE3

Halogen-free

Lead (Pb)-free

IRFR1N60APbF

IRFR1N60ATRLPbFa

IRFR1N60ATRPbFa

IRFR1N60ATRRPbFa

IRFU1N60APbF

SiHFR1N60A-E3

SiHFR1N60ATL-E3a

SiHFR1N60AT-E3a

SiHFR1N60ATR-E3a

SiHFU1N60A-E3

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

600

Gate-Source Voltage

VGS

± 30

Continuous Drain Current

VGS at 10 V

TC = 25 °C

1.4

TC = 100 °C

0.89

Pulsed Drain Currenta

IDM

5.6

Linear Derating Factor

0.28

W/°C

Single Pulse Avalanche Energyb

EAS

Repetitive Avalanche Currenta

IAR

1.4

Repetitive Avalanche Energya

EAR

3.6

Maximum Power Dissipation

TC = 25 °C

Peak Diode Recovery dV/dtc

dV/dt

3.8

V/ns

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)d

for 10 s

300

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Starting TJ = 25 °C, L = 95 mH, Rg = 25 , IAS = 1.4 A (see fig. 12).

c.ISD 1.4 A, dI/dt 180 A/μs, VDD VDS, TJ 150 °C.

d.1.6 mm from case.

S13-0171-Rev. D, 04-Feb-13	1	Document Number: 91267
	For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A

www.vishay.com				Vishay Siliconix
				Vishay Siliconix

THERMAL RESISTANCE RATINGS
PARAMETER	SYMBOL	TYP.	MAX.	UNIT

Maximum Junction-to-Ambient	RthJA	-	110
Maximum Junction-to-Ambient	RthJA	-	50	°C/W
(PCB Mount)a	RthJA	-	50	°C/W
Maximum Junction-to-Case (Drain)	RthJC	-	3.5

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER	SYMBOL	TEST CONDITIONS					MIN.	TYP.	MAX.	UNIT

Static
Drain-Source Breakdown Voltage	VDS	VGS = 0 V, ID = 250 μA					600	-	-	V
Gate-Source Threshold Voltage	VGS(th)	VDS = VGS, ID = 250 μA					2.0	-	4.0	V
Gate-Source Threshold Voltage	VGS(th)	VDS = VGS, ID = 250 μA					2.0	-	4.0
Gate-Source Leakage	IGSS		VGS = ± 30 V				-	-	± 100	nA
Zero Gate Voltage Drain Current	IDSS	VDS = 600 V, VGS = 0 V					-	-	25	μA
Zero Gate Voltage Drain Current	IDSS	VDS = 480 V, VGS = 0 V, TJ = 150 °C					-	-	250	μA
		VDS = 480 V, VGS = 0 V, TJ = 150 °C					-	-	250
Drain-Source On-State Resistance	RDS(on)	VGS = 10 V			ID = 0.84 Ab		-	-	7.0
Forward Transconductance	gfs	VDS = 50 V, ID = 0.84 A					0.88	-	-	S
Dynamic
Input Capacitance	Ciss			VGS = 0 V,			-	229	-
Output Capacitance	Coss			VDS = 25 V,			-	32.6	-
		f = 1.0 MHz, see fig. 5
Reverse Transfer Capacitance	Crss	f = 1.0 MHz, see fig. 5					-	2.4	-	pF
Reverse Transfer Capacitance	Crss						-	2.4	-
Output Capacitance	Coss				VDS = 1.0 V, f = 1.0 MHz		-	320	-
					VDS = 1.0 V, f = 1.0 MHz		-	320	-
		VGS = 0 V			VDS = 480 V, f = 1.0 MHz		-	11.5	-
		VGS = 0 V			VDS = 480 V, f = 1.0 MHz		-	11.5	-
Effective Output Capacitance	Coss eff.				VDS = 0 V to 480 Vc		-	130	-
Total Gate Charge	Qg				ID = 1.4 A, VDS = 400 V,		-	-	14
Gate-Source Charge	Qgs	VGS = 10 V			ID = 1.4 A, VDS = 400 V,		-	-	2.7	nC
Gate-Source Charge	Qgs	VGS = 10 V			see fig. 6 and 13b		-	-	2.7	nC
Gate-Drain Charge	Qgd						-	-	8.1
Turn-On Delay Time	td(on)						-	9.8	-
Rise Time	tr	VDD = 250 V, ID = 1.4 A,					-	14	-	ns
Turn-Off Delay Time	td(off)	Rg = 2.15 , RD = 178 , see fig. 10b					-	18	-	ns
		Rg = 2.15 , RD = 178 , see fig. 10b

Fall Time	tf						-	20	-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current	IS	MOSFET symbol				D	-	-	1.4
		showing the								A
		showing the								A
Pulsed Diode Forward Currenta	ISM	integral reverse			G		-	-	5.6
		p - n junction diode				S


Body Diode Voltage	VSD	TJ = 25 °C, IS = 1.4 A, VGS = 0 Vb					-	-	1.6	V
Body Diode Reverse Recovery Time	trr	TJ = 25 °C, IF = 1.4 A, dI/dt = 100 A/μsb					-	290	440	ns
Body Diode Reverse Recovery Charge	Qrr	TJ = 25 °C, IF = 1.4 A, dI/dt = 100 A/μsb					-	510	760	μC
Body Diode Reverse Recovery Charge	Qrr						-	510	760	μC
Forward Turn-On Time	ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width 300 μs; duty cycle 2 %.

c.Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.

S13-0171-Rev. D, 04-Feb-13	2	Document Number: 91267
	For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A

www.vishay.com	Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

	10	VGS
	TOP	15V
<![if ! IE]> <![endif]>(A)		10V
		8.0V
		7.0V
<![if ! IE]> <![endif]>Current		6.0V
		5.5V
		5.0V
	BOTTOM 4.5V
	1
<![if ! IE]> <![endif]>Drain-to-Source	0.1		4.5V
			4.5V

<![if ! IE]> <![endif]>,
<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>I
			20μs PULSE WIDTH
	0.01		TJ= 25 °C
	0.01	1	10	100
	0.1	1	10	100

VDS , Drain-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics

	10	VGS
	TOP	15V
<![if ! IE]> <![endif]>(A)		10V
		8.0V
		7.0V
<![if ! IE]> <![endif]>Current		6.0V
		5.5V
		5.0V
	BOTTOM 4.5V

<![if ! IE]> <![endif]>Drain-to-Source	1
<![if ! IE]> <![endif]>Drain-to-Source			4.5V
<![if ! IE]> <![endif]>,
<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>I
			20μs PULSE WIDTH
	0.1		TJ= 150 °C
	0.1	10	100
	1	10	100

VDS, Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics

	10
<![if ! IE]> <![endif]>(A)
<![if ! IE]> <![endif]>Current		T = 150°C
<![if ! IE]> <![endif]>Current		J
<![if ! IE]> <![endif]>Drain-to-Source	1
			T = 25°C
			J

<![if ! IE]> <![endif]>,
<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>I
				VDS= 100V
	0.1			20μs PULSE WIDTH
	0.1	5.0	6.0	7.0	8.0	9.0
	4.0	5.0	6.0	7.0	8.0	9.0

VGS, Gate-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

		3.0	I	= 1.4A
<![if ! IE]> <![endif]>Resistance			D
<![if ! IE]> <![endif]>Resistance		2.5
		2.5
<![if ! IE]> <![endif]>Source-to-Drain On	<![if ! IE]> <![endif]>(Normalized)	2.0
<![if ! IE]> <![endif]>Source-to-Drain On	<![if ! IE]> <![endif]>(Normalized)	1.5
		1.5
		1.0
<![if ! IE]> <![endif]>,
<![if ! IE]> <![endif]>DS(on)		0.5
		0.5
<![if ! IE]> <![endif]>R		0.0		VGS=10V
		0.0		-40 -20 0 20 40 60 80 100 120 140 160
		-60		-40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature ( °C)

Fig. 4 - Normalized On-Resistance vs. Temperature

S13-0171-Rev. D, 04-Feb-13	3	Document Number: 91267
	For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A

		www.vishay.com
	10000	V GS = 0V,	f = 1MHz
		V GS = 0V,	f = 1MHz
		Ciss = C gs + C gd,		C dsSHORTED
		Crss = C gd
		Coss= C ds+ C gd
<![if ! IE]> <![endif]>(pF)	1000
<![if ! IE]> <![endif]>(pF)
<![if ! IE]> <![endif]>C, Capacitance				Ciss
	100
	10			Coss
	10
				Crss
	1	10		100	A
	1	10		100	1000

VDS , Drain-to-Source Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

	20	ID = 1.4A
<![if ! IE]> <![endif]>(V)			VDS = 480V
<![if ! IE]> <![endif]>(V)	16		VDS = 300V
<![if ! IE]> <![endif]>Voltage	16		VDS = 120V
			VDS = 120V
	12
<![if ! IE]> <![endif]>Gate-to-Source	12
	8

<![if ! IE]> <![endif]>,
<![if ! IE]> <![endif]>GS	4
<![if ! IE]> <![endif]>GS
<![if ! IE]> <![endif]>V
					FOR TEST CIRCUIT
	0					SEE FIGURE 13
	0	2	4	6	8	10	12	14
	0	2	4	6	8	10	12	14

QG, Total Gate Charge (nC)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Vishay Siliconix

	10
<![if ! IE]> <![endif]>Current(A)		T = 150° C
<![if ! IE]> <![endif]>Drain		J
<![if ! IE]> <![endif]>Drain	1
<![if ! IE]> <![endif]>, Reverse				TJ = 25°C
<![if ! IE]> <![endif]>SD
<![if ! IE]> <![endif]>I
	0.1			VGS = 0 V
	0.1	0.6	0.8	1.0	1.2
	0.4	0.6	0.8	1.0	1.2

VSD ,Source-to-Drain Voltage (V)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

	100
	OPERATION IN THIS AREA LIMITED
			BY RDS(on)
<![if ! IE]> <![endif]>(A)	10
<![if ! IE]> <![endif]>Drain Current	10
			10us
	1		100us
<![if ! IE]> <![endif]>,
<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>I
			1ms
	TC = 25°C
	TJ = 150°C		10ms
	Single Pulse		10ms
	0.1	100	1000	10000
	10	100	1000	10000

VDS , Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area

S13-0171-Rev. D, 04-Feb-13	4	Document Number: 91267
	For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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