Vishay IRFPS40N60K, SiHFPS40N60K Data Sheet

IRFPS40N60K, SiHFPS40N60K

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

• Low Gate Charge Qg Results in Simple Drive

VDS (V)

600

Requirement

Available

RDS(on) ( )

VGS = 10 V

0.110

• Improved Gate, Avalanche and Dynamic dV/dt

RoHS*

Qg (Max.) (nC)

330

COMPLIANT

Ruggedness

Qgs (nC)

• Fully Characterized Capacitance and Avalanche Voltage

Qgd (nC)

150

and Current

Configuration

Single

• Enhanced Body Diode dV/dt Capability

• Compliant to RoHS Directive 2002/95/EC

Super-247

APPLICATIONS

• Hard Switching Primary or PFC Switch

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High Speed Power Switching

N-Channel MOSFET

• Motor Drive

ORDERING INFORMATION

Package

Super-247

Lead (Pb)-free

IRFPS40N60KPbF

SiHFPS40N60K-E3

SnPb

IRFPS40N60K

SiHFPS40N60K

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

600

Gate-Source Voltage

VGS

± 30

Continuous Drain Current

VGS at 10 V

TC = 25 °C

TC = 100 °C

Pulsed Drain Currenta

IDM

160

Linear Derating Factor

4.5

W/°C

Single Pulse Avalanche Energyb

EAS

600

Repetitive Avalanche Currenta

IAR

Repetitive Avalanche Energya

EAR

Maximum Power Dissipation

TC = 25 °C

570

Peak Diode Recovery dV/dtc

dV/dt

7.5

V/ns

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

300d

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Starting TJ = 25 °C, L = 0.84 mH, Rg = 25 , IAS = 38 A, dV/dt = 5.5 V/ns (see fig. 12a).

c.ISD 38 A, dI/dt 150 A/μs, VDD VDS, TJ 150 °C.

d.1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91261	www.vishay.com
S11-0112-Rev. B, 31-Jan-11	1

IRFPS40N60K, SiHFPS40N60K

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER	SYMBOL	TYP.	MAX.	UNIT

Maximum Junction-to-Ambient	RthJA	-	40
Case-to-Sink, Flat, Greased Surface	RthCS	0.24	-	°C/W
Maximum Junction-to-Case (Drain)	RthJC	-	0.22

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER	SYMBOL	TEST CONDITIONS		MIN.	TYP.	MAX.	UNIT

Static
Drain-Source Breakdown Voltage	VDS	VGS = 0 V, ID = 250 μA		600	-	-	V
VDS Temperature Coefficient	VDS/TJ	Reference to 25 °C, ID = 1 mA		-	0.63	-	V/°C
Gate-Source Threshold Voltage	VGS(th)	VDS = VGS, ID = 250 μA		3.0	-	5.0	V
Gate-Source Leakage	IGSS		VGS = ± 30 V	-	-	± 100	nA
Zero Gate Voltage Drain Current	IDSS	VDS = 600 V, VGS = 0 V		-	-	50	μA
Zero Gate Voltage Drain Current	IDSS	VDS = 480 V, VGS = 0 V, TJ = 125 °C		-	-	250	μA
		VDS = 480 V, VGS = 0 V, TJ = 125 °C		-	-	250
Drain-Source On-State Resistance	RDS(on)	VGS = 10 V	ID = 24 Ab	-	0.110	0.130
Forward Transconductance	gfs	VDS = 50 V, ID = 24 Ab		21	-	-	S
Dynamic
Input Capacitance	Ciss		VGS = 0 V,	-	7970	-
Output Capacitance	Coss		VDS = 25 V,	-	750	-
		f = 1.0 MHz, see fig. 5
Reverse Transfer Capacitance	Crss	f = 1.0 MHz, see fig. 5		-	75	-	pF
Reverse Transfer Capacitance	Crss			-	75	-
Output Capacitance	Coss		VDS = 1.0 V , f = 1.0 MHz	-	9440	-
			VDS = 1.0 V , f = 1.0 MHz	-	9440	-
		VGS = 0 V	VDS = 480 V , f = 1.0 MHz	-	200	-
		VGS = 0 V	VDS = 480 V , f = 1.0 MHz	-	200	-
Effective Output Capacitance	Coss eff.		VDS = 0 V to 480 Vc	-	260	-
Total Gate Charge	Qg		ID = 38 A, VDS = 480 V,	-	-	330
Gate-Source Charge	Qgs		ID = 38 A, VDS = 480 V,	-	-	84	nC
Gate-Source Charge	Qgs		see fig. 6 and 13b	-	-	84	nC
Gate-Drain Charge	Qgd		see fig. 6 and 13b	-	-	150
Gate-Drain Charge	Qgd			-	-	150
Turn-On Delay Time	td(on)	VGS = 10 V		-	47	-
Rise Time	tr		VDD = 300 V, ID = 38 A,	-	110	-	ns
Turn-Off Delay Time	td(off)		VDD = 300 V, ID = 38 A,	-	97	-	ns
Turn-Off Delay Time	td(off)		RG = 4.3 , see fig. 10b	-	97	-
Fall Time	tf			-	60	-

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current	IS	MOSFET symbol		D	-	-	40
Continuous Source-Drain Diode Current	IS	showing the			-	-	40
		showing the						A
		integral reverse		G				A
		integral reverse		G
Pulsed Diode Forward Currenta	ISM	p - n junction diode		S	-	-	160
Body Diode Voltage	VSD	TJ = 25 °C, IS = 38 A, VGS = 0 Vb			-	-	1.5	V
Body Diode Reverse Recovery Time	trr	TJ = 25 °C			-	630	950	ns
Body Diode Reverse Recovery Time	trr	TJ = 125 °C	IF = 38 A, dI/dt = 100		-	730	1090	ns
Body Diode Reverse Recovery Charge	Qrr	TJ = 25 °C		A/μs	-	14	20	μC
Body Diode Reverse Recovery Charge	Qrr	TJ = 125 °C			-	17	25	μC
		TJ = 125 °C			-	17	25
Body Diode Recovery Current	IRRM	TJ = 25 °C			-	39	58	A
Forward Turn-On Time	ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width 300 μs; duty cycle 2 %.

c.Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.

www.vishay.com	Document Number: 91261
2	S11-0112-Rev. B, 31-Jan-11

IRFPS40N60K, SiHFPS40N60K

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

	1000	VGS
	TOP	15V
		10V
<![if ! IE]> <![endif]>A)(t	100	8.0V
		7.0V
		6.0V
<![if ! IE]> <![endif]>n		5.5V
<![if ! IE]> <![endif]>err		5.5V
<![if ! IE]> <![endif]>err	10	5.0V
<![if ! IE]> <![endif]>u	10
<![if ! IE]> <![endif]>u	BOTTOM	4.5V
<![if ! IE]> <![endif]>Cecur	BOTTOM	4.5V
<![if ! IE]> <![endif]>Cecur	1
<![if ! IE]> <![endif]>oS-
<![if ! IE]> <![endif]>o-t	0.1
<![if ! IE]> <![endif]>nair	0.1		4.5V
<![if ! IE]> <![endif]>nair			4.5V
<![if ! IE]> <![endif]>D,
<![if ! IE]> <![endif]>D	0.01
<![if ! IE]> <![endif]>I	0.01		20μs PULSE WIDTH
			20μs PULSE WIDTH
	0.001		Tj = 25°C
	0.001
	0.1	1	10	100

VDS, Drain-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics

	100	VGS
		VGS
	TOP	15V
		10V
<![if ! IE]> <![endif]>)A(t		8.0V
		7.0V
		6.0V
<![if ! IE]> <![endif]>n		5.5V
<![if ! IE]> <![endif]>err		5.5V
<![if ! IE]> <![endif]>err	10	5.0V
<![if ! IE]> <![endif]>u	BOTTOM	4.5V
<![if ! IE]> <![endif]>Cecru	BOTTOM	4.5V
<![if ! IE]> <![endif]>Cecru			4.5V
<![if ! IE]> <![endif]>oS-			4.5V
<![if ! IE]> <![endif]>oS-
<![if ! IE]> <![endif]>ont-i	1
<![if ! IE]> <![endif]>aDr,
<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>I			20μs PULSE WIDTH
			20μs PULSE WIDTH
	0.1		Tj = 150°C
	0.1
	0.1	1	10	100

VDS, Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics

	1000
	100	T = 150	°C
		J
<![if ! IE]> <![endif]>(A)
<![if ! IE]> <![endif]>Current	10
<![if ! IE]> <![endif]>Source-to-Drain		T = 25 °C
	1		J
	1
<![if ! IE]> <![endif]>,	0.1
<![if ! IE]> <![endif]>D	0.1
<![if ! IE]> <![endif]>I
					V DS= 50V
	0.01				20μs PULSE WIDTH
	0.01
	4	6	8	10	11	13	15

V GS, Gate-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

		3.5
		ID = 38A
		3.0
<![if ! IE]> <![endif]>Drain-to-Source On Resistance		2.5
	<![if ! IE]> <![endif]>(Normalized)	2.0
		1.5
		1.0

<![if ! IE]> <![endif]>,		0.5
<![if ! IE]> <![endif]>DS(on)		0.5
<![if ! IE]> <![endif]>DS(on)											V GS = 10V
<![if ! IE]> <![endif]>R		0.0									V GS = 10V
		0.0
		-60	-40	-20	0	20	40	60	80	100	120	140	160
				T , Junction Temperature						( ° C)
				J

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91261	www.vishay.com
S11-0112-Rev. B, 31-Jan-11	3

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