Vishay IRFPS40N60K, SiHFPS40N60K Data Sheet
IRFPS40N60K, SiHFPS40N60K
N-Channel MOSFET
G
D
S
Available
RoHS*
COMPLIANT
Power MOSFET
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 600
()V
R
DS(on)
Q
(Max.) (nC) 330
g
Q
(nC) 84
gs
Q
(nC) 150
gd
Configuration Single
= 10 V 0.110
GS
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Enhanced Body Diode dV/dt Capability
• Compliant to RoHS Directive 2002/95/EC
Super-247
APPLICATIONS
• Hard Switching Primary or PFC Switch
• Switch Mode Power Supply (SMPS)
S
D
G
• Uninterruptible Power Supply
• High Speed Power Switching
• Motor Drive
ORDERING INFORMATION
Package Super-247
Lead (Pb)-free
SnPb
IRFPS40N60KPbF
SiHFPS40N60K-E3
IRFPS40N60K
SiHFPS40N60K
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
= 100 °C 24
C
DS
± 30
GS
I
D
IDM 160
Linear Derating Factor 4.5 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
b
a
a
= 25 °C P
c
C
Operating Junction and Storage Temperature Range T
E
AS
I
AR
E
AR
D
dV/dt 7.5 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
SD
d. 1.6 mm from case.
= 25 °C, L = 0.84 mH, Rg = 25 , IAS = 38 A, dV/dt = 5.5 V/ns (see fig. 12a).
J
38 A, dI/dt 150 A/μs, VDD VDS, TJ 150 °C.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91261 www.vishay.com
S11-0112-Rev. B, 31-Jan-11 1
600
40
600 mJ
40 A
57 mJ
570 W
- 55 to + 150
d
V
AT
°C
IRFPS40N60K, SiHFPS40N60K
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain) R
thJA
thCS
thJC
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.63 - V/°C
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Output Capacitance C
Effective Output Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Body Diode Recovery Current I
Forward Turn-On Time t
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. C
eff. is a fixed capacitance that gives the same charging time as C
oss
DS
GS(th)
V
GSS
DSS
VGS = 10 V ID = 24 A
DS(on)
fs
iss
- 750 -
oss
-75-
rss
oss
eff. VDS = 0 V to 480 V
oss
g
--84
gs
- - 150
gd
d(on)
r
-97-
d(off)
-60-
f
S
V
V
GS
V
GS
MOSFET symbol
showing the
integral reverse
I
SM
SD
rr
RRM
on
rr
p - n junction diode
TJ = 25 °C
T
= 125 °C - 730 1090
J
TJ = 25 °C - 14 20
T
= 125 °C - 17 25
J
-40
0.24 -
°C/WCase-to-Sink, Flat, Greased Surface R
-0.22
VGS = 0 V, ID = 250 μA 600 - - V
VDS = VGS, ID = 250 μA 3.0 - 5.0 V
= ± 30 V - - ± 100 nA
GS
VDS = 600 V, VGS = 0 V - - 50
= 480 V, VGS = 0 V, TJ = 125 °C - - 250
DS
VDS = 50 V, ID = 24 A
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
V
DS
= 0 V
V
DS
= 1.0 V , f = 1.0 MHz - 9440 -
= 480 V , f = 1.0 MHz - 200 -
b
b
- 0.110 0.130
21 - - S
- 7970 -
c
- 260 -
- - 330
I
= 38 A, VDS = 480 V,
D
see fig. 6 and 13
= 10 V
= 300 V, ID = 38 A,
V
DD
R
= 4.3 , see fig. 10
G
TJ = 25 °C, IS = 38 A, VGS = 0 V
b
-47-
- 110 -
b
D
G
S
b
--40
- - 160
--1.5V
- 630 950
= 38 A, dI/dt = 100
I
F
A/μs
TJ = 25 °C - 39 58 A
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
while VDS is rising from 0 % to 80 % VDS.
oss
μA
pF
nC Gate-Source Charge Q
ns
A
ns
μC
www.vishay.com Document Number: 91261
2 S11-0112-Rev. B, 31-Jan-11
IRFPS40N60K, SiHFPS40N60K
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
4.5V
20μs PULSE WIDTH
Tj = 25°C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
4.5V
20μs PULSE WIDTH
Tj = 150°C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix
1000
Fig. 1 - Typical Output Characteristics
100
10
1
0.1
D
I , Drain-to-Source Current (A)
0.01
4 6 8 10 11 13 15
°
T = 150 C
J
°
T = 25 C
J
V , Gate-to-Source Voltage (V)
GS
V = 50V
DS
20μs PULSE WIDT H
Fig. 3 - Typical Transfer Characteristics
3.5
38A
I =
D
3.0
2.5
2.0
Fig. 2 - Typical Output Characteristics
Document Number: 91261 www.vishay.com
S11-0112-Rev. B, 31-Jan-11 3
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
V =
GS
°
Fig. 4 - Normalized On-Resistance vs. Temperature
10V
Loading...