Vishay IRFPS38N60L, SiHFPS38N60L Data Sheet

IRFPS38N60L, SiHFPS38N60L

N-Channel MOSFET

Super-247

Available

RoHS*

COMPLIANT

Power MOSFET

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 600

()V

DS(on)

(Max.) (nC) 320

(nC) 85

(nC) 160

Configuration Single

= 10 V 0.12

FEATURES

• Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications

• Lower Gate Charge Results in Simple Drive Requirements

• Enhanced dV/dt Capabilities Offer Improved Ruggedness

• Higher Gate Voltage Threshold Offers Improved Noise Immunity

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Zero Voltage Switching SMPS

• Telecom and Server Power Supplies

• Uniterruptible Power Supplies

• Motor Control applications

ORDERING INFORMATION

Package Super-247

Lead (Pb)-free

SnPb

IRFPS38N60LPbF

SiHFPS38N60L-E3

IRFPS38N60L

SiHFPS38N60L

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

at 10 V

= 100 °C 24

± 30

IDM 150

Linear Derating Factor 4.3 W/°C

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

= 25 °C P

Operating Junction and Storage Temperature Range T

dV/dt 19 V/ns

, T

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 12). b. Starting T c. I

d. 1.6 mm from case.

= 25 °C, L = 0.91 mH, Rg = 25 , IAS = 38 A, dV/dt = 13 V/ns (see fig. 14a).

 38 A, dI/dt  630 A/μs, VDD  VDS, TJ  150 °C.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91259 www.vishay.com S11-0111-Rev. B, 07-Feb-11 1

600

680 mJ

38 A

54 mJ

540 W

- 55 to + 150

10 lbf · in

1.1 N · m

°C

IRFPS38N60L, SiHFPS38N60L

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R Case-to-Sink, Flat, Greased Surface R Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 410 - mV/°C

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Effective Output Capacitance C

Effective Output Capacitance (Energy Related)

Total Gate Charge Q

Gate-Drain Charge Q

Gate Resistance R

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Reverse Recovery Time I

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 12). b. Pulse width  300 μs; duty cycle  2 %. c. C

eff. is a fixed capacitance that gives the same charging time as C

oss

eff. (ER) is a fixed capacitance that stores the same energy as C

oss

www.vishay.com Document Number: 91259 2 S11-0111-Rev. B, 07-Feb-11

GS(th)

GSS

DSS

VGS = 10 V ID = 23 A

DS(on)

iss

- 740 -

oss

-72-

rss

eff.

oss

eff. (ER) - 260 -

oss

--85

- - 160

d(on)

-92-

d(off)

-69-

RRM

MOSFET symbol showing the

integral reverse p - n junction diode

-40

0.24 -

°C/W

-0.22

VGS = 0 V, ID = 250 μA 600 - - V

VDS = VGS, ID = 250 μA 3.0 - 5.0 V

= ± 30 V - - ± 100 nA

VDS = 600 V, VGS = 0 V - - 50 μA

= 480 V, VGS = 0 V, TJ = 125 °C - - 2.0 mA

VDS = 50 V, ID = 23 A

VGS = 0 V,

= 25 V,

- 0.12 0.15 

20 - - S

- 7990 -

f = 1.0 MHz, see fig. 5

= 0 V

= 0 V to 480 V

- 350 -

- - 320

= 38 A, VDS = 480 V

= 10 V

see fig. 7 and 15

f = 1 MHz, open drain - 1.2 - 

= 300 V, ID = 38 A,

-44-

- 130 -

RG = 4.3 , VGS = 10 V,

see fig. 11a and 11b

TJ = 25 °C, IS = 38 A, VGS = 0 V

TJ = 25 °C, IF = 38 A

= 125 °C, dI/dt = 100 A/μs

TJ = 25 °C, IF = 38 A, VGS = 0 V

= 125 °C, dI/dt = 100 A/μs

--38

- - 150

--1.5V

- 170 250

- 420 630

- 830 1240

- 2600 3900

TJ = 25 °C - 9.1 14 A

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

while VDS is rising form 0 % to 80 % VDS.

oss

while VDS is rising from 0 % to 80 % VDS.

oss

nC Gate-Source Charge Q

IRFPS38N60L, SiHFPS38N60L

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

0.001

0.01

0.1

100

1000

(

)

4.5V

20µs PULSE WIDTH Tj = 25°C

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

0.1

100

1000

(

)

4.5V

20µs PULSE WIDTH Tj = 150°C

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature (°C)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

(

)

(

)

ID= 38A

= 10V

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Vishay Siliconix

1000

)

100

(

t n e

r u

e c

r u o S

i a

r D

0.1

0.01

TJ= 25°C

4 6 8 10 12 14 16

VGS, Gate-to-Source Voltage (V)

TJ= 150°C

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

Document Number: 91259 www.vishay.com S11-0111-Rev. B, 07-Feb-11 3

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

+ 6 hidden pages