IRFPS37N50A, SiHFPS37N50A
Vishay Siliconix
Power MOSFET
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FEATURES |
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PRODUCT SUMMARY |
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• Low Gate Charge Qg Results in Simple Drive |
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VDS (V) |
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500 |
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Requirement |
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RDS(on) (Max.) ( ) |
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VGS = 10 V |
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0.13 |
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Available |
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• Improved Gate, Avalanche and Dynamic dV/dt |
RoHS* |
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Qg (Max.) (nC) |
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180 |
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Ruggedness |
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COMPLIANT |
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Qgs (nC) |
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46 |
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Qgd (nC) |
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71 |
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• Fully Characterized Capacitance and Avalanche Voltage |
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Configuration |
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Single |
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and Current |
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• Effective Coss Specified |
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Super-247 |
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• Compliant to RoHS Directive 2002/95/EC |
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APPLICATIONS |
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G |
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• Switch Mode Power Supply (SMPS) |
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S |
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• Uninterruptible Power Supply |
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• High Speed Power Switching |
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G |
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S |
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N-Channel MOSFET |
TYPICAL SMPS TOPOLOGIES |
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• Full Bridge Converters |
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• Power Factor Correction Boost |
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ORDERING INFORMATION |
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Package |
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Super-247 |
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Lead (Pb)-free |
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IRFPS37N50APbF |
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SiHFPS37N50A-E3 |
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SnPb |
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IRFPS37N50A |
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SiHFPS37N50A |
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ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) |
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PARAMETER |
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SYMBOL |
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LIMIT |
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UNIT |
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Drain-Source Voltage |
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VDS |
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500 |
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V |
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Gate-Source Voltage |
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VGS |
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± 30 |
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Continuous Drain Current |
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VGS at 10 V |
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TC = 25 °C |
ID |
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36 |
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TC = 100 °C |
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23 |
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A |
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Pulsed Drain Currenta |
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IDM |
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144 |
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Linear Derating Factor |
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3.6 |
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W/°C |
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Single Pulse Avalanche Energyb |
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EAS |
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1260 |
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mJ |
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Repetitive Avalanche Currenta |
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IAR |
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36 |
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A |
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Repetitive Avalanche Energya |
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EAR |
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44 |
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mJ |
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Maximum Power Dissipation |
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TC = 25 °C |
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PD |
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446 |
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W |
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Peak Diode Recovery dV/dtc |
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dV/dt |
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3.5 |
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V/ns |
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Operating Junction and Storage Temperature Range |
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TJ, Tstg |
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- 55 to + 150 |
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°C |
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Soldering Recommendations (Peak Temperature) |
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for 10 s |
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300d |
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Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 1.94 mH, Rg = 25 , IAS = 36 A (see fig. 12).
c. ISD 36 A, dI/dt 145 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91258 |
www.vishay.com |
S11-0111-Rev. C, 07-Feb-11 |
1 |
IRFPS37N50A, SiHFPS37N50A
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER |
SYMBOL |
TYP. |
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Maximum Junction-to-Ambient |
RthJA |
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40 |
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Case-to-Sink, Flat, Greased Surface |
RthCS |
0.24 |
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°C/W |
Maximum Junction-to-Case (Drain) |
RthJC |
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0.28 |
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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER |
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SYMBOL |
TEST CONDITIONS |
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MIN. |
TYP. |
MAX. |
UNIT |
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Static |
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Drain-Source Breakdown Voltage |
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VDS |
VGS = 0 V, ID = 250 μA |
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500 |
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V |
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Gate-Source Threshold Voltage |
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VGS(th) |
VDS = VGS, ID = 250 μA |
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2.0 |
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4.0 |
V |
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Gate-Source Leakage |
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IGSS |
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VGS = ± 30 V |
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± 100 |
nA |
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Zero Gate Voltage Drain Current |
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IDSS |
VDS = 500 V, VGS = 0 V |
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25 |
μA |
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VDS = 400 V, VGS = 0 V, TJ = 150 °C |
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250 |
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Drain-Source On-State Resistance |
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RDS(on) |
VGS = 10 V |
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ID = 22 Ab |
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0.13 |
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Forward Transconductance |
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gfs |
VDS = 50 V, ID = 22 Ab |
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20 |
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S |
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Dynamic |
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Input Capacitance |
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Ciss |
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VGS = 0 V, |
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5579 |
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Output Capacitance |
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Coss |
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VDS = 25 V, |
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810 |
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f = 1.0 MHz, see fig. 5 |
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Reverse Transfer Capacitance |
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Crss |
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36 |
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pF |
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Output Capacitance |
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Coss |
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VDS = 1.0 V , f = 1.0 MHz |
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7905 |
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VGS = 0 V |
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VDS = 400 V , f = 1.0 MHz |
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221 |
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Effective Output Capacitance |
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Coss eff. |
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VDS = 0 V to 400 V |
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400 |
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Total Gate Charge |
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Qg |
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ID = 36 A, VDS = 400 V, |
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180 |
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Gate-Source Charge |
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Qgs |
VGS = 10 V |
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46 |
nC |
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see fig. 6 and 13b |
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Gate-Drain Charge |
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Qgd |
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71 |
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Turn-On Delay Time |
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td(on) |
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23 |
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Rise Time |
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tr |
VDD = 250 V, ID = 36 A, |
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98 |
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RG = 2.15 , RD = 7.0 |
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Turn-Off Delay Time |
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td(off) |
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see fig. 10b |
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Fall Time |
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tf |
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80 |
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Drain-Source Body Diode Characteristics |
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Continuous Source-Drain Diode Current |
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IS |
MOSFET symbol |
D |
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36 |
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showing the |
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Pulsed Diode Forward Currenta |
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ISM |
integral reverse |
G |
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144 |
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p - n junction diode |
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S |
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Body Diode Voltage |
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VSD |
TJ = 25 °C, IS = 36 A, VGS = 0 Vb |
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1.5 |
V |
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Body Diode Reverse Recovery Time |
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trr |
TJ = 25 °C, IF = 36 A, dI/dt = 100 A/μsb |
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570 |
860 |
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Body Diode Reverse Recovery Charge |
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Qrr |
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8.6 |
13 |
μC |
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Forward Turn-On Time |
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ton |
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) |
Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.Pulse width 300 μs; duty cycle 2 %.
c.Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.
www.vishay.com |
Document Number: 91258 |
2 |
S11-0111-Rev. C, 07-Feb-11 |
IRFPS37N50A, SiHFPS37N50A
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
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1000 |
VGS |
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TOP |
15V |
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<![if ! IE]> <![endif]>(A) |
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10V |
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8.0V |
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7.0V |
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6.0V |
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<![if ! IE]> <![endif]>Current |
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100 |
5.5V |
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5.0V |
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BOTTOM 4.5V |
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<![if ! IE]> <![endif]>Drain-to-Source |
10 |
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1 |
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4.5V |
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<![if ! IE]> <![endif]>, |
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<![if ! IE]> <![endif]>D |
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<![if ! IE]> <![endif]>I |
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20µs PULSE WIDTH |
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0.1 |
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TJ= 25 °C |
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0.1 |
1 |
10 |
100 |
VDS , Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
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100 |
VGS |
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TOP |
15V |
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<![if ! IE]> <![endif]>(A) |
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10V |
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8.0V |
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7.0V |
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<![if ! IE]> <![endif]>Current |
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6.0V |
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5.5V |
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5.0V |
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BOTTOM 4.5V |
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<![if ! IE]> <![endif]>Drain-to-Source |
10 |
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4.5V |
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<![if ! IE]> <![endif]>, |
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<![if ! IE]> <![endif]>D |
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<![if ! IE]> <![endif]>I |
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20µs PULSE WIDTH |
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1 |
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TJ= 150 °C |
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0.1 |
1 |
10 |
100 |
VDS , Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
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1000 |
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<![if ! IE]> <![endif]>(A) |
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<![if ! IE]> <![endif]>Current |
100 |
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<![if ! IE]> <![endif]>Drain-to-Source |
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T = 150°C |
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J |
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T = 25°C |
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10 |
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J |
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<![if ! IE]> <![endif]>, |
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<![if ! IE]> <![endif]>D |
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<![if ! IE]> <![endif]>I |
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V DS= 50V |
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1 |
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20µs PULSE WIDTH |
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4.0 |
5.0 |
6.0 |
7.0 |
8.0 |
9.0 |
VGS , Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
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3.0 |
I |
= 36A |
<![if ! IE]> <![endif]>Resistance |
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D |
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2.5 |
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<![if ! IE]> <![endif]>Source-to-Drain On |
<![if ! IE]> <![endif]>(Normalized) |
2.0 |
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1.5 |
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1.0 |
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<![if ! IE]> <![endif]>, |
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<![if ! IE]> <![endif]>DS(on) |
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0.5 |
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<![if ! IE]> <![endif]>R |
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0.0 |
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VGS = 10V |
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-60 |
-40 -20 0 20 40 60 80 100 120 140 160 |
TJ, Junction Temperature ( °C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91258 |
www.vishay.com |
S11-0111-Rev. C, 07-Feb-11 |
3 |