Vishay IRFPE40, SiHFPE40 Data Sheet

IRFPE40, SiHFPE40

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)

800

RDS(on) (Ω)

VGS = 10 V

2.0

Qg (Max.) (nC)

130

Qgs (nC)

17

Qgd (nC)

72

Configuration

Single

D

TO-247AC

G

S

D

S

G

N-Channel MOSFET

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated	Available

	• Isolated Central Mounting Hole	RoHS*
		COMPLIANT

•Fast Switching

•Ease of Paralleling

•Simple Drive Requirements

•Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.

ORDERING INFORMATION
Package				TO-247AC
Lead (Pb)-free				IRFPE450PbF
				SiHFPE450-E3
SnPb				IRFPE450
				SiHFPE450
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER					SYMBOL		LIMIT		UNIT
Drain-Source Voltage						VDS	800		V
Gate-Source Voltage						VGS	± 20
Continuous Drain Current		VGS at 10 V		TC = 25 °C		ID	5.4
				TC = 100 °C			3.4		A
Pulsed Drain Currenta						IDM	22
Linear Derating Factor							1.2		W/°C
Single Pulse Avalanche Energyb						EAS	490		mJ
Repetitive Avalanche Currenta						IAR	5.4		A
Repetitive Avalanche Energya						EAR	15		mJ
Maximum Power Dissipation		TC = 25 °C				PD	150		W
Peak Diode Recovery dV/dtc						dV/dt	2.0		V/ns
Operating Junction and Storage Temperature Range						TJ, Tstg	- 55 to + 150		°C
Soldering Recommendations (Peak Temperature)		for 10 s					300d
Mounting Torque		6-32 or M3 screw					10		lbf · in
							1.1		N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 31 mH, Rg = 25 Ω, IAS = 5.4 A (see fig. 12).
c. ISD ≤ 5.4 A, dI/dt ≤ 120 A/μs, VDD ≤ 600, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91247								www.vishay.com
S11-0442-Rev. B, 14-Mar-11								1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFPE40, SiHFPE40

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER	SYMBOL	TYP.	MAX.	UNIT
Maximum Junction-to-Ambient	RthJA	-	40
Case-to-Sink, Flat, Greased Surface	RthCS	0.24	-	°C/W
Maximum Junction-to-Case (Drain)	RthJC	-	0.83

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER		SYMBOL	TEST CONDITIONS										MIN.	TYP.	MAX.	UNIT
Static
Drain-Source Breakdown Voltage		VDS	VGS = 0 V, ID = 250 μA										800	-	-	V
VDS Temperature Coefficient		VDS/TJ	Reference to 25 °C, ID = 1 mA										-	0.98	-	V/°C
Gate-Source Threshold Voltage		VGS(th)	VDS = VGS, ID = 250 μA										2.0	-	4.0	V
Gate-Source Leakage		IGSS		VGS = ± 20 V									-	-	± 100	nA
Zero Gate Voltage Drain Current		IDSS	VDS = 800 V, VGS = 0 V										-	-	100	μA
			VDS = 640 V, VGS = 0 V, TJ = 125 °C										-	-	500
Drain-Source On-State Resistance		RDS(on)	VGS = 10 V				ID = 3.2 Ab						-	-	2.0	Ω
Forward Transconductance		gfs	VDS = 100 V, ID = 3.2 Ab										3.0	-	-	S
Dynamic
Input Capacitance		Ciss		VGS = 0 V,									-	1900	-
Output Capacitance		Coss														pF
				VDS = 25 V,									-	470	-
			f = 1.0 MHz, see fig. 5
Reverse Transfer Capacitance		Crss											-	280	-
Total Gate Charge		Qg			ID = 5.4 A, VDS = 400 V,								-	-	130
Gate-Source Charge		Qgs	VGS = 10 V										-	-	17	nC
						see fig. 6 and 13b
Gate-Drain Charge		Qgd											-	-	72
Turn-On Delay Time		td(on)											-	16	-
Rise Time		tr	VDD = 400 V, ID = 5.4 A,										-	36	-	ns
Turn-Off Delay Time		td(off)	Rg = 9.1 Ω, RD = 75 Ω, see fig. 10b										-	100	-
Fall Time		tf											-	32	-
Internal Drain Inductance		LD	Between lead,								D		-	5.0	-
			6 mm (0.25") from
			package and center of				G									nH
Internal Source Inductance		LS	die contact								S		-	13	-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current		IS	MOSFET symbol									D	-	-	5.4
			showing the													A
Pulsed Diode Forward Currenta		ISM	integral reverse				G						-	-	22
			p - n junction diode									S
Body Diode Voltage		VSD	TJ = 25 °C, IS = 5.4 A, VGS = 0 Vb										-	-	1.8	V
Body Diode Reverse Recovery Time		trr	TJ = 25 °C, IF = 5.4 A, dI/dt = 100 A/μsb										-	550	830	ns
Body Diode Reverse Recovery Charge		Qrr											-	2.4	3.6	μC
Forward Turn-On Time		ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width ≤ 300 μs; duty cycle ≤ 2 %.

www.vishay.com	Document Number: 91247
2	S11-0442-Rev. B, 14-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFPE40, SiHFPE40

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

				Fig. 3 - Typical Transfer Characteristics
Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, TC = 150 °C

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91247	www.vishay.com
S11-0442-Rev. B, 14-Mar-11	3

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000