Vishay IRFPE30, SiHFPE30 Data Sheet
Power MOSFET
TO-247AC
G
D
S
Available
RoHS*
COMPLIANT
IRFPE30, SiHFPE30
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 800
(Ω)V
R
DS(on)
Q
(Max.) (nC) 78
g
Q
(nC) 9.6
gs
Q
(nC) 45
gd
Configuration Single
= 10 V 3.0
GS
D
FEATURES
• Dynamic dV/dt Rated
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
•Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third Generation Power MOSFETs from Vishay provide the
designer with best combination of fast switching, ruggedized
G
device design, low on-resistance and cost-effectiveness.
The TO-247AC package is preferred for
commercial-industrial applications where higher power
levels preclude the use of TO-220AB devices. The
S
N-Channel MOSFET
TO-247AC is similar but superior to the earlier TO-218
package because of its isolated mounting hole. It also
provides greater creepage distance between pins to meet
the requirements of most safety specifications.
ORDERING INFORMATION
Package TO-247AC
Lead (Pb)-free
SnPb
IRFPE30PbF
SiHFPE30-E3
IRFPE30
SiHFPE30
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
= 100 °C 2.6
T
C
DS
± 20
GS
I
D
IDM 16
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
b
a
a
= 25 °C P
c
C
E
AS
I
AR
E
AR
D
dV/dt 2.0 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Mounting Torque 6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 50 V, starting TJ = 25 °C, L = 18 mH, Rg = 25 Ω, IAS = 4.1 A (see fig. 12).
DD
c. I
≤ 4.1 A, dI/dt ≤ 100 A/μs, VDD ≤ 600, TJ ≤ 150 °C.
SD
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91246 www.vishay.com
S11-0442-Rev. B, 14-Mar-11 1
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
800
4.1
170 mJ
4.1 A
13 mJ
125 W
- 55 to + 150
d
10 lbf · in
1.1 N · m
www.vishay.com/doc?91000
V
A
°C
IRFPE30, SiHFPE30
D
S
G
S
D
G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain) R
thJA
thCS
thJC
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.90 -
V
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
DS
GS(th)
V
GSS
DSS
V
DS(on)
fs
iss
- 310 -
oss
- 190 -
rss
g
--9.6
gs
--45
gd
d(on)
r
-82-
d(off)
-30-
f
D
V
V
R
Between lead,
6 mm (0.25") from
package and center of
S
die contact
-40
0.24 -
-1.0
VGS = 0 V, ID = 250 μA 800 - -
VDS = VGS, ID = 250 μA 2.0 - 4.0
= ± 20 V - - ± 100
GS
VDS = 800 V, VGS = 0 V - - 100
= 640 V, VGS = 0 V, TJ = 125 °C - - 500
DS
= 10 V ID = 2.5 A
GS
VDS = 50 V, ID = 2.5 A
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
b
b
--3.0
2.4 - -
- 1300 -
--78
= 4.1 A, VDS = 400 V,
I
= 10 V
GS
D
see fig. 6 and 13
b
-12-
V
= 400 V, ID = 4.1 A ,
DD
= 12 Ω, RD = 95 Ω, see fig. 10
g
b
-33-
-5.0-
-13-
°C/WCase-to-Sink, Flat, Greased Surface R
V
V/°C
V
nA
μA
Ω
S
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
I
SM
SD
rr
rr
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IS = 4.1 A, VGS = 0 V
b
TJ = 25 °C, IF = 4.1 A, dI/dt = 100 A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
--4.1
--16
--1.8V
- 480 720 ns
b
-1.82.7μC
A
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
www.vishay.com Document Number: 91246
2 S11-0442-Rev. B, 14-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRFPE30, SiHFPE30
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, T
= 150 °C
C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91246 www.vishay.com
S11-0442-Rev. B, 14-Mar-11 3
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
Loading...