Vishay IRFPC50LC, SiHFPC50LC Data Sheet
Power MOSFET
N-Channel MOSFET
G
D
S
TO-247AC
G
D
S
Available
RoHS*
COMPLIANT
IRFPC50LC, SiHFPC50LC
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 600
(Ω)V
R
DS(on)
Q
(Max.) (nC) 84
g
Q
(nC) 18
gs
Q
(nC) 36
gd
= 10 V 0.60
GS
Configuration Single
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Ultra Low Gate Charge
• Reduced Gate Drive Requirement
• Enhanced 30 V V
• Reduced C
iss
, C
GS
oss
Rating
, C
rss
• Isolated Central Mounting Hole
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
This new ser
significantly lower gate charge over conventional MOSFETs.
Utilizing advanced Power MOSFET technology the device
improvements allow for reduced gate drive requirements,
faster switching speeds and increased total system savings.
These device improvements combined with the proven
ruggedness and reliability of Power MOSFETs offer the
designer a new standard in power transistors for switching
applications.
The TO-247AC package is preferred for
commercial-industrial applications where higher power levels
preclude the use of TO-220AB devices. The TO-247AC is
similar but superior to the earlier TO-218 package because its
isolated mounting hole.
TO-247AC
IRFPC50LCPbF
SiHFPC50LC-E3
IRFPC50LC
SiHFPC50LC
ies of low charge Power MOSFETs achieve
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
= 100 °C 7.3
C
DS
± 30
GS
I
D
IDM 44
Linear Derating Factor 1.5 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
b
a
a
= 25 °C P
c
C
Operating Junction and Storage Temperature Range T
E
AS
I
AR
E
AR
D
dV/dt 3.0 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Mounting Torque 6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
= 25 V, starting TJ = 25 °C, L = 13 mH, Rg = 25 Ω, IAS = 11 A (see fig. 12).
b. V
DD
≤ 11 A, dI/dt ≤ 100 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
c. I
SD
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91242 www.vishay.com
S11-0443-Rev. B, 14-Mar-11 1
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
600
11
920 mJ
11 A
19 mJ
190 W
- 55 to + 150
d
10 lbf · in
1.1 N · m
www.vishay.com/doc?91000
V
AT
°C
IRFPC50LC, SiHFPC50LC
D
S
G
S
D
G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain) R
thJA
thCS
thJC
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.59 -
V
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
DS
GS(th)
V
GSS
DSS
V
DS(on)
fs
iss
- 270 -
oss
-28-
rss
g
--18
gs
--36
gd
d(on)
r
-41-
d(off)
-26-
f
D
V
V
R
Between lead,
6 mm (0.25") from
package and center of
S
die contact
-40
0.24 -
°C/WCase-to-Sink, Flat, Greased Surface R
-0.65
VGS = 0 V, ID = 250 μA 600 - -
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
= ± 20 V - - ± 100 nA
GS
VDS = 600 V, VGS = 0 V - - 25
= 480 V, VGS = 0 V, TJ = 125 °C - - 250
DS
= 10 V ID = 6.6 A
GS
VDS = 100 V, ID = 6.6 A
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
b
b
--0.60Ω
7.0 - - S
- 2300 -
--84
= 11 A, VDS = 360 V,
I
= 10 V
GS
D
see fig. 6 and 13
b
-17-
V
= 300 V, ID = 11 A ,
DD
= 6.2 Ω, RD = 30 Ω, see fig. 10
g
b
-32-
-5.0-
-13-
V
V/°C
μA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
I
SM
SD
rr
rr
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IS = 11 A, VGS = 0 V
b
TJ = 25 °C, IF = 11 A, dI/dt = 100 A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
--11
--44
--1.4V
- 590 890 ns
b
-4.56.8μC
A
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
www.vishay.com Document Number: 91242
2 S11-0443-Rev. B, 14-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRFPC50LC, SiHFPC50LC
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, T
= 150 °C
C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91242 www.vishay.com
S11-0443-Rev. B, 14-Mar-11 3
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
Loading...