Vishay IRFPC50A, SiHFPC50A Data Sheet
Power MOSFET
TO-247AC
G
D
S
IRFPC50A, SiHFPC50A
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 600
()V
R
DS(on)
Q
(Max.) (nC) 70
g
Q
(nC) 19
gs
Q
(nC) 28
gd
Configuration Single
= 10 V 0.58
GS
D
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Effective C
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
G
• Uninterruptable Power Supply
• High Speed Power Switching
S
N-Channel MOSFET
TYPICAL SMPS TOPOLOGY
• PFC Boost
ORDERING INFORMATION
Package TO-247AC
Lead (Pb)-free
SnPb
IRFPC50APbF
SiHFPC50A-E3
IRFPC50A
SiHFPC50A
Specified
oss
Available
RoHS*
COMPLIANT
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
= 100 °C 7.0
C
DS
± 30
GS
I
D
IDM 44
Linear Derating Factor 1.4 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
b
a
a
= 25 °C P
c
C
E
AS
I
AR
E
AR
D
dV/dt 4.9 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Mounting Torque 6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
SD
d. 1.6 mm from case.
= 25 °C, L = 15 mH, Rg = 25 , IAS = 11 A (see fig. 12).
J
11 A, dI/dt 126 A/μs, VDD VDS, TJ 150 °C.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91241 www.vishay.com
S11-0443-Rev. B, 14-Mar-11 1
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
600
11
920 mJ
11 A
18 mJ
180 W
- 55 to + 150
d
10 lbf · in
1.1 N · m
www.vishay.com/doc?91000
V
AT
°C
IRFPC50A, SiHFPC50A
S
D
G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
thJA
R
thCS
R
thJC
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Temperature Coefficient
V
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Output Capacitance C
Effective Output Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. C
eff. is a fixed capacitance that gives the same charging time as C
oss
DS
V
DS/TJ
GS(th)
V
GSS
DSS
V
DS(on)
fs
iss
-270-
oss
-9.7-
rss
oss
eff. VDS = 0 V to 480 V
oss
g
--19
gs
--28
gd
d(on)
r
-33-
d(off)
-29-
f
S
I
SM
SD
rr
rr
on
V
V
MOSFET symbol
showing the
integral reverse
p - n junction diode
-40
0.24 -
°C/W
-0.65
VGS = 0 V, ID = 250 μA 600 - - V
Reference to 25 °C, I
= 1 mA
D
-0.65-
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
= ± 30 V - - ± 100 nA
GS
VDS = 600 V, VGS = 0 V - - 25
V
= 480 V, VGS = 0 V, TJ = 125 °C - - 250
DS
= 10 V ID = 6.0 A
GS
VDS = 50 V, ID = 6.0 A
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
V
= 1.0 V, f = 1.0 MHz - 2830 -
DS
GS
= 0 V
= 480 V, f = 1.0 MHz - 74 -
V
DS
b
b
- - 0.58
7.7 - - S
-2100-
c
-81-
--70
= 11 A, VDS = 480 V
I
= 10 V
GS
D
see fig. 6 and 13
b
-15-
= 300 V, ID = 11 A
V
DD
R
= 6.2 , RD= 30
g
see fig. 10
b
-40-
--11
--44
TJ = 25 °C, IS = 11 A, VGS = 0 V
TJ = 25 °C, IF = 11 A,
dI/dt = 100 A/μs
b
--1.4V
- 500 740 ns
b
-4.06.0μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
while VDS is rising from 0 % to 80 % VDS.
oss
V/°C
μA
pF
nC Gate-Source Charge Q
ns
A
www.vishay.com Document Number: 91241
2 S11-0443-Rev. B, 14-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.1
1
10
100
0.1 1 10 100
20μs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
1 10 100
20μs PULSE WIDTH
T = 150 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain- to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
Fig. 1 - Typical Output Characteristics
IRFPC50A, SiHFPC50A
Vishay Siliconix
100
°
T = 150 C
J
10
°
T = 25 C
J
D
I , Drain-to-Source Current (A)
100V
V = 50V
DS
1
4.0 5.0 6.0 7.0 8.0 9.0
V , Gate-to-Source Voltage (V)
GS
Fig. 3 - Typical Transfer Characteristics
20μs PULSE WIDTH
Fig. 2 - Typical Output Characteristics
3.0
2.5
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
13A
I =
D
V =
10V
GS
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
°
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91241 www.vishay.com
S11-0443-Rev. B, 14-Mar-11 3
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
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