Vishay IRFPC50A, SiHFPC50A Data Sheet

IRFPC50A, SiHFPC50A

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)		600
RDS(on) ( )	VGS = 10 V		0.58
Qg (Max.) (nC)		70
Qgs (nC)		19
Qgd (nC)		28
Configuration		Single

FEATURES

• Low Gate Charge Qg Results in Simple Drive
Requirement	Available
• Improved Gate, Avalanche and Dynamic dV/dt	RoHS*
Ruggedness	COMPLIANT

•Fully Characterized Capacitance and Avalanche Voltage and Current

•Effective Coss Specified

					D						• Compliant to RoHS Directive 2002/95/EC
TO-247AC											APPLICATIONS
											• Switch Mode Power Supply (SMPS)
	G										• Uninterruptable Power Supply
											• High Speed Power Switching
	S
	D										TYPICAL SMPS TOPOLOGY
G					S
	N-Channel MOSFET										• PFC Boost

ORDERING INFORMATION
Package				TO-247AC
Lead (Pb)-free				IRFPC50APbF
				SiHFPC50A-E3
SnPb				IRFPC50A
				SiHFPC50A
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER					SYMBOL		LIMIT		UNIT
Drain-Source Voltage						VDS	600		V
Gate-Source Voltage						VGS	± 30
Continuous Drain Current		VGS at 10 V		TC = 25 °C		ID	11
				TC = 100 °C			7.0		A
Pulsed Drain Currenta						IDM	44
Linear Derating Factor							1.4		W/°C
Single Pulse Avalanche Energyb						EAS	920		mJ
Repetitive Avalanche Currenta						IAR	11		A
Repetitive Avalanche Energya						EAR	18		mJ
Maximum Power Dissipation		TC = 25 °C				PD	180		W
Peak Diode Recovery dV/dtc						dV/dt	4.9		V/ns
Operating Junction and Storage Temperature Range						TJ, Tstg	- 55 to + 150		°C
Soldering Recommendations (Peak Temperature)		for 10 s					300d
Mounting Torque		6-32 or M3 screw					10		lbf · in
							1.1		N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 15 mH, Rg = 25 , IAS = 11 A (see fig. 12).
c. ISD 11 A, dI/dt 126 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91241								www.vishay.com
S11-0443-Rev. B, 14-Mar-11								1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFPC50A, SiHFPC50A

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER	SYMBOL	TYP.	MAX.	UNIT
Maximum Junction-to-Ambient	RthJA	-	40
Case-to-Sink, Flat, Greased Surface	RthCS	0.24	-	°C/W
Maximum Junction-to-Case (Drain)	RthJC	-	0.65

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER		SYMBOL	TEST CONDITIONS								MIN.	TYP.	MAX.	UNIT
Static
Drain-Source Breakdown Voltage		VDS	VGS = 0 V, ID = 250 μA								600	-	-	V
VDS Temperature Coefficient		VDS/TJ	Reference to 25 °C, ID = 1 mA								-	0.65	-	V/°C
Gate-Source Threshold Voltage		VGS(th)	VDS = VGS, ID = 250 μA								2.0	-	4.0	V
Gate-Source Leakage		IGSS		VGS = ± 30 V							-	-	± 100	nA
Zero Gate Voltage Drain Current		IDSS	VDS = 600 V, VGS = 0 V								-	-	25	μA
			VDS = 480 V, VGS = 0 V, TJ = 125 °C								-	-	250
Drain-Source On-State Resistance		RDS(on)	VGS = 10 V		ID = 6.0 Ab						-	-	0.58
Forward Transconductance		gfs	VDS = 50 V, ID = 6.0 Ab								7.7	-	-	S
Dynamic
Input Capacitance		Ciss		VGS = 0 V,							-	2100	-
Output Capacitance		Coss		VDS = 25 V,							-	270	-
			f = 1.0 MHz, see fig. 5
Reverse Transfer Capacitance		Crss									-	9.7	-	pF
Output Capacitance		Coss		VDS = 1.0 V, f = 1.0 MHz							-	2830	-
			VGS = 0 V	VDS = 480 V, f = 1.0 MHz							-	74	-
Effective Output Capacitance		Coss eff.		VDS = 0 V to 480 Vc							-	81	-
Total Gate Charge		Qg		ID = 11 A, VDS = 480 V							-	-	70
Gate-Source Charge		Qgs	VGS = 10 V								-	-	19	nC
					see fig. 6 and 13b
Gate-Drain Charge		Qgd									-	-	28
Turn-On Delay Time		td(on)									-	15	-
Rise Time		tr	VDD = 300 V, ID = 11 A								-	40	-	ns
			Rg = 6.2 , RD= 30
Turn-Off Delay Time		td(off)									-	33	-
				see fig. 10b
Fall Time		tf									-	29	-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current		IS	MOSFET symbol							D	-	-	11
			showing the											A
Pulsed Diode Forward Currenta		ISM	integral reverse		G					S	-	-	44
			p - n junction diode
Body Diode Voltage		VSD	TJ = 25 °C, IS = 11 A, VGS = 0 Vb								-	-	1.4	V
Body Diode Reverse Recovery Time		trr	TJ = 25 °C, IF = 11 A,								-	500	740	ns
Body Diode Reverse Recovery Charge		Qrr	dI/dt = 100 A/μsb								-	4.0	6.0	μC
Forward Turn-On Time		ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width 300 μs; duty cycle 2 %.

c.Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.

www.vishay.com	Document Number: 91241
2	S11-0443-Rev. B, 14-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFPC50A, SiHFPC50A

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

	100	VGS
	TOP	15V
<![if ! IE]> <![endif]>(A)		10V
		8.0V
		7.0V
<![if ! IE]> <![endif]>Current		6.0V
		5.5V
		5.0V
	BOTTOM 4.5V
	10
<![if ! IE]> <![endif]>Drain-to-Source	1		4.5V
<![if ! IE]> <![endif]>,
<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>I
			20μs PULSE WIDTH
	0.1		TJ= 25 °C
		1	10	100
	0.1

VDS , Drain-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics

	100	VGS
	TOP	15V
<![if ! IE]> <![endif]>(A)		10V
		8.0V
		7.0V
<![if ! IE]> <![endif]>Current		6.0V
		5.5V
		5.0V
	BOTTOM 4.5V
<![if ! IE]> <![endif]>Drain-to-Source	10
			4.5V
<![if ! IE]> <![endif]>,
<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>I
			20μs PULSE WIDTH
	1		TJ= 150 °C
		10	100
	1

VDS, Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics

	100
<![if ! IE]> <![endif]>Current (A)	TJ = 150°C
<![if ! IE]> <![endif]>Drain-to-Source	10
	T = 25°C
	J
<![if ! IE]> <![endif]>,
<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>I
	VDS=100V50V

20μs PULSE WIDTH 1

4.0 5.0 6.0 7.0 8.0 9.0

VGS, Gate-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

		3.0	I	= 13A
<![if ! IE]> <![endif]>Resistance			D
		2.5
<![if ! IE]> <![endif]>Source-to-Drain On	<![if ! IE]> <![endif]>(Normalized)	2.0
		1.5
		1.0
<![if ! IE]> <![endif]>,
<![if ! IE]> <![endif]>DS(on)		0.5
<![if ! IE]> <![endif]>R		0.0		VGS=10V
				-40 -20 0 20 40 60 80 100 120 140 160
		-60

TJ, Junction Temperature ( °C)

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91241	www.vishay.com
S11-0443-Rev. B, 14-Mar-11	3

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000