Vishay IRFP9240, SiHFP9240 Data Sheet

IRFP9240, SiHFP9240

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)	- 200 V
RDS(on) (Max.) (Ω)	VGS = - 10 V		0.50
Qg (Max.) (nC)	44
Qgs (nC)	7.1
Qgd (nC)	27
Configuration	Single

S

TO-247AC

G

S

D

G D

P-Channel MOSFET

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated	Available

	• P-Channel	RoHS*
		COMPLIANT

•Isolated Central Mounting Hole

•Fast Switching

•Ease of Paralleling

•Simple Drive Requirements

•Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.

ORDERING INFORMATION

	Package	TO-247AC
	Lead (Pb)-free	IRFP9240PbF
		SiHFP9240-E3
	SnPb	IRFP9240
		SiHFP9240

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER						SYMBOL	LIMIT		UNIT
Drain-Source Voltage						VDS	- 200		V
Gate-Source Voltage						VGS	± 20
Continuous Drain Current		VGS at - 10 V		TC = 25 °C		ID	- 12
				TC = 100 °C			- 7.5		A
Pulsed Drain Currenta						IDM	- 48
Linear Derating Factor							1.2		W/°C
Single Pulse Avalanche Energyb						EAS	790		mJ
Repetitive Avalanche Currenta						IAR	- 12		A
Repetitive Avalanche Energya						EAR	15		mJ
Maximum Power Dissipation			TC = 25 °C			PD	150		W
Peak Diode Recovery dV/dtc						dV/dt	- 5.0		V/ns
Operating Junction and Storage Temperature Range						TJ, Tstg	- 55 to + 150		°C
Soldering Recommendations (Peak Temperature)			for 10 s				300d
Mounting Torque			6-32 or M3 screw				10		lbf · in
							1.1		N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 50 V, starting TJ = 25 °C, L = 8.2 mH, Rg = 25			Ω, IAS = - 12 A (see fig. 12).
c. ISD ≤ - 12 A, dI/dt ≤ 150 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91239								www.vishay.com
S11-0444-Rev. B, 14-Mar-11								1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFP9240, SiHFP9240

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER	SYMBOL	TYP.	MAX.	UNIT
Maximum Junction-to-Ambient	RthJA	-	40
Case-to-Sink, Flat, Greased Surface	RthCS	0.24	-	°C/W
Maximum Junction-to-Case (Drain)	RthJC	-	0.83

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

	PARAMETER	SYMBOL	TEST CONDITIONS			MIN.	TYP.	MAX.	UNIT
	Static
	Drain-Source Breakdown Voltage	VDS	VGS = 0 V, ID = - 250 μA			- 200	-	-	V
	VDS Temperature Coefficient	VDS/TJ	Reference to 25 °C, ID = - 1 mA			-	- 0.20	-	V/°C
	Gate-Source Threshold Voltage	VGS(th)	VDS = VGS, ID = - 250 μA			- 2.0	-	- 4.0	V
	Gate-Source Leakage	IGSS		VGS = ± 20 V		-	-	± 100	nA
	Zero Gate Voltage Drain Current	IDSS	VDS = - 200 V, VGS = 0 V			-	-	- 100	μA
			VDS = - 160 V, VGS = 0 V, TJ = 125 °C			-	-	- 500
	Drain-Source On-State Resistance	RDS(on)	VGS = - 10 V	ID = - 7.2 Ab		-	-	0.50	Ω
	Forward Transconductance	gfs	VDS = - 50 V, ID = - 7.2 A			4.2	-	-	S
	Dynamic
	Input Capacitance	Ciss		VGS = 0 V,		-	1200	-
	Output Capacitance	Coss							pF
				VDS = - 25 V,		-	370	-
	Reverse Transfer Capacitance	Crss	f = 1.0 MHz, see fig. 5			-	81	-
	Total Gate Charge	Qg				-	-	44
	Gate-Source Charge	Qgs	VGS = - 10 V	ID = - 11 A, VDS = - 160 V		-	-	7.1	nC
				see fig. 6 and 13b
	Gate-Drain Charge	Qgd				-	-	27
	Turn-On Delay Time	td(on)				-	14	-
	Rise Time	tr	VDD = - 100 V, ID		= - 11 A	-	43	-
	Turn-Off Delay Time	td(off)	RG = 9.1 Ω, RD= 8.6 Ω,			-	39	-	ns
				see fig. 10b
	Fall Time	tf				-	38	-
	Internal Drain Inductance	LD	Between lead,		D	-	5.0	-
			6 mm (0.25") from
									nH
			package and center of		G
	Internal Source Inductance	LS	die contact			-	13	-
					S
	Drain-Source Body Diode Characteristics
	Continuous Source-Drain Diode Current	IS	MOSFET symbol		D	-	-	- 12
			showing the
									A
			integral reverse		G
	Pulsed Diode Forward Currenta	ISM				-	-	- 48
			p - n junction diode		S
	Body Diode Voltage	VSD	TJ = 25 °C, IS = - 12 A, VGS = 0 Vb			-	-	- 5.0	V
	Body Diode Reverse Recovery Time	trr	TJ = 25 °C, IF = - 11 A, dI/dt = 100 A/μsb			-	250	300	ns
	Body Diode Reverse Recovery Charge	Qrr				-	2.9	3.6	μC
	Forward Turn-On Time	ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width ≤ 300 μs; duty cycle ≤ 2 %.

www.vishay.com	Document Number: 91239
2	S11-0444-Rev. B, 14-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFP9240, SiHFP9240

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

	Fig. 1 - Typical Output Characteristics, TC = 25 °C				Fig. 3 - Typical Transfer Characteristics

Fig. 2 - Typical Output Characteristics, TC = 150 °C

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91239	www.vishay.com
S11-0444-Rev. B, 14-Mar-11	3

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000