IRFP9140, SiHFP9140
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) |
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- 100 |
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RDS(on) (Ω) |
VGS = - 10 V |
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0.20 |
Qg (Max.) (nC) |
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61 |
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Qgs (nC) |
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14 |
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Qgd (nC) |
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29 |
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Configuration |
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Single |
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S
TO-247AC
G
S
D
G D
P-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated |
Available |
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• P-Channel |
RoHS* |
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COMPLIANT |
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•Isolated Central Mounting Hole
•175 °C Operating Temperature
•Fast Switching
•Ease of Paralleling
•Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mouting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
ORDERING INFORMATION |
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Package |
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TO-247AC |
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Lead (Pb)-free |
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IRFP9140PbF |
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SiHFP9140-E3 |
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SnPb |
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IRFP9140 |
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SiHFP9140 |
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ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) |
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PARAMETER |
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SYMBOL |
LIMIT |
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UNIT |
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Drain-Source Voltage |
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VDS |
- 100 |
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V |
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Gate-Source Voltage |
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VGS |
± 20 |
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Continuous Drain Current |
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VGS at - 10 V |
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TC = 25 °C |
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ID |
- 21 |
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TC = 100 °C |
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- 15 |
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A |
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Pulsed Drain Currenta |
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IDM |
- 84 |
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Linear Derating Factor |
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1.2 |
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W/°C |
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Single Pulse Avalanche Energyb |
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EAS |
960 |
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mJ |
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Repetitive Avalanche Currenta |
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IAR |
- 21 |
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A |
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Repetitive Avalanche Energya |
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EAR |
18 |
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mJ |
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Maximum Power Dissipation |
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TC = 25 °C |
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PD |
180 |
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W |
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Peak Diode Recovery dV/dtc |
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dV/dt |
- 5.5 |
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V/ns |
Operating Junction and Storage Temperature Range |
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TJ, Tstg |
- 55 to + 175 |
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°C |
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Soldering Recommendations (Peak Temperature) |
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for 10 s |
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300d |
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Mounting Torque |
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6-32 or M3 screw |
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10 |
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lbf · in |
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1.1 |
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N · m |
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Notes |
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a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). |
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b. VDD = - 25 V, starting TJ = 25 °C, L = 3.3 mH, Rg = 25 |
Ω, IAS = - 21 A (see fig. 12). |
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c. ISD ≤ - 21 A, dI/dt ≤ 200 A/μs, VDD ≤ VDS, TJ ≤ 175 °C. |
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d. 1.6 mm from case. |
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* Pb containing terminations are not RoHS compliant, exemptions may apply |
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Document Number: 91238 |
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www.vishay.com |
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S11-0444-Rev. B, 14-Mar-11 |
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1 |
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP9140, SiHFP9140
Vishay Siliconix
THERMAL RESISTANCE RATINGS |
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PARAMETER |
SYMBOL |
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TYP. |
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MAX. |
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UNIT |
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Maximum Junction-to-Ambient |
RthJA |
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- |
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40 |
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Case-to-Sink, Flat, Greased Surface |
RthCS |
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0.24 |
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- |
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°C/W |
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Maximum Junction-to-Case (Drain) |
RthJC |
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- |
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0.83 |
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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) |
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PARAMETER |
SYMBOL |
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TEST CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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Static |
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Drain-Source Breakdown Voltage |
VDS |
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VGS = 0 V, ID = - 250 μA |
- 100 |
- |
- |
V |
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VDS Temperature Coefficient |
VDS/TJ |
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Reference to 25 °C, ID = - 1 mA |
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- 0.087 |
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V/°C |
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Gate-Source Threshold Voltage |
VGS(th) |
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VDS = VGS, ID = - 250 μA |
- 2.0 |
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- 4.0 |
V |
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Gate-Source Leakage |
IGSS |
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VGS = ± 20 V |
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± 100 |
nA |
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Zero Gate Voltage Drain Current |
IDSS |
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VDS = - 100 V, VGS = 0 V |
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- 100 |
μA |
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VDS = - 80 V, VGS = 0 V, TJ = 150 °C |
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- 500 |
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Drain-Source On-State Resistance |
R |
DS(on) |
V |
GS |
= - 10 V |
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I |
D |
= - 13 Ab |
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0.20 |
Ω |
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Forward Transconductance |
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g |
fs |
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V |
DS |
= - 50 V, I |
= - 13 Ab |
6.2 |
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S |
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D |
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Dynamic |
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Input Capacitance |
Ciss |
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VGS = 0 V, |
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1400 |
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Output Capacitance |
Coss |
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pF |
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VDS = - 25 V, |
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590 |
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Reverse Transfer Capacitance |
Crss |
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f = 1.0 MHz, see fig. 5 |
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140 |
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Total Gate Charge |
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Qg |
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ID = - 19 A, VDS = - 80 V, |
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61 |
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Gate-Source Charge |
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Qgs |
VGS = - 10 V |
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14 |
nC |
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see fig. 6 and 13b |
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Gate-Drain Charge |
Qgd |
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- |
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Turn-On Delay Time |
td(on) |
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16 |
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Rise Time |
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tr |
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VDD |
= - 50 V, ID |
= - 19 A, |
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73 |
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Turn-Off Delay Time |
td(off) |
Rg = 9.1 Ω, RD = 2.4 |
Ω, see fig. 10b |
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34 |
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Fall Time |
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tf |
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57 |
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Internal Drain Inductance |
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LD |
Between lead, |
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D |
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5.0 |
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6 mm (0.25") from |
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nH |
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package and center of |
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Internal Source Inductance |
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LS |
die contact |
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13 |
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S |
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Drain-Source Body Diode Characteristics |
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Continuous Source-Drain Diode Current |
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IS |
MOSFET symbol |
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D |
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- 21 |
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showing the |
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A |
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integral reverse |
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Pulsed Diode Forward Currenta |
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ISM |
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G |
- |
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- 84 |
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p - n junction diode |
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Body Diode Voltage |
VSD |
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TJ = 25 °C, IS = - 21 A, VGS = 0 Vb |
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- 5.0 |
V |
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Body Diode Reverse Recovery Time |
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trr |
TJ = 25 °C, IF = - 19 A, dI/dt = 100 A/μsb |
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130 |
260 |
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Body Diode Reverse Recovery Charge |
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Qrr |
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0.35 |
0.70 |
μC |
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Forward Turn-On Time |
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ton |
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Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) |
Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
www.vishay.com |
Document Number: 91238 |
2 |
S11-0444-Rev. B, 14-Mar-11 |
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP9140, SiHFP9140
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, TC = 25 °C |
Fig. 3 - Typical Transfer Characteristics |
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Fig. 2 - Typical Output Characteristics, TC = 175 °C |
Fig. 4 - Normalized On-Resistance vs. Temperature |
Document Number: 91238 |
www.vishay.com |
S11-0444-Rev. B, 14-Mar-11 |
3 |
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000