Vishay IRFP9140, SiHFP9140 Data Sheet

IRFP9140, SiHFP9140

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)		- 100
RDS(on) (Ω)	VGS = - 10 V		0.20
Qg (Max.) (nC)		61
Qgs (nC)		14
Qgd (nC)		29
Configuration		Single

S

TO-247AC

G

S

D

G D

P-Channel MOSFET

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated	Available

	• P-Channel	RoHS*
		COMPLIANT

•Isolated Central Mounting Hole

•175 °C Operating Temperature

•Fast Switching

•Ease of Paralleling

•Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mouting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.

ORDERING INFORMATION
Package					TO-247AC
Lead (Pb)-free					IRFP9140PbF
					SiHFP9140-E3
SnPb					IRFP9140
					SiHFP9140
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER							SYMBOL	LIMIT		UNIT
Drain-Source Voltage							VDS	- 100		V
Gate-Source Voltage							VGS	± 20
Continuous Drain Current		VGS at - 10 V			TC = 25 °C		ID	- 21
					TC = 100 °C			- 15		A
Pulsed Drain Currenta							IDM	- 84
Linear Derating Factor								1.2		W/°C
Single Pulse Avalanche Energyb							EAS	960		mJ
Repetitive Avalanche Currenta							IAR	- 21		A
Repetitive Avalanche Energya							EAR	18		mJ
Maximum Power Dissipation			TC = 25 °C				PD	180		W
Peak Diode Recovery dV/dtc							dV/dt	- 5.5		V/ns
Operating Junction and Storage Temperature Range							TJ, Tstg	- 55 to + 175		°C
Soldering Recommendations (Peak Temperature)			for 10 s					300d
Mounting Torque			6-32 or M3 screw					10		lbf · in
								1.1		N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 °C, L = 3.3 mH, Rg = 25			Ω, IAS = - 21 A (see fig. 12).
c. ISD ≤ - 21 A, dI/dt ≤ 200 A/μs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91238									www.vishay.com
S11-0444-Rev. B, 14-Mar-11									1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFP9140, SiHFP9140

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

RthJA

-

40

Case-to-Sink, Flat, Greased Surface

RthCS

0.24

-

°C/W

Maximum Junction-to-Case (Drain)

RthJC

-

0.83

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = - 250 μA

- 100

-

-

V

VDS Temperature Coefficient

VDS/TJ

Reference to 25 °C, ID = - 1 mA

-

- 0.087

-

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 μA

- 2.0

-

- 4.0

V

Gate-Source Leakage

IGSS

VGS = ± 20 V

-

-

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = - 100 V, VGS = 0 V

-

-

- 100

μA

VDS = - 80 V, VGS = 0 V, TJ = 150 °C

-

-

- 500

Drain-Source On-State Resistance

R

DS(on)

V

GS

= - 10 V

I

D

= - 13 Ab

-

-

0.20

Ω

Forward Transconductance

g

fs

V

DS

= - 50 V, I

= - 13 Ab

6.2

-

-

S

D

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

-

1400

-

Output Capacitance

Coss

pF

VDS = - 25 V,

-

590

-

Reverse Transfer Capacitance

Crss

f = 1.0 MHz, see fig. 5

-

140

-

Total Gate Charge

Qg

ID = - 19 A, VDS = - 80 V,

-

-

61

Gate-Source Charge

Qgs

VGS = - 10 V

-

-

14

nC

see fig. 6 and 13b

Gate-Drain Charge

Qgd

-

-

29

Turn-On Delay Time

td(on)

-

16

-

Rise Time

tr

VDD

= - 50 V, ID

= - 19 A,

-

73

-

ns

Turn-Off Delay Time

td(off)

Rg = 9.1 Ω, RD = 2.4

Ω, see fig. 10b

-

34

-

Fall Time

tf

-

57

-

Internal Drain Inductance

LD

Between lead,

D

-

5.0

-

6 mm (0.25") from

nH

package and center of

G

Internal Source Inductance

LS

die contact

-

13

-

S

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

MOSFET symbol

D

-

-

- 21

showing the

A

integral reverse

Pulsed Diode Forward Currenta

ISM

G

-

-

- 84

p - n junction diode

S

Body Diode Voltage

VSD

TJ = 25 °C, IS = - 21 A, VGS = 0 Vb

-

-

- 5.0

V

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = - 19 A, dI/dt = 100 A/μsb

-

130

260

ns

Body Diode Reverse Recovery Charge

Qrr

-

0.35

0.70

μC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width ≤ 300 μs; duty cycle ≤ 2 %.

www.vishay.com	Document Number: 91238
2	S11-0444-Rev. B, 14-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFP9140, SiHFP9140

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics, TC = 25 °C	Fig. 3 - Typical Transfer Characteristics

Fig. 2 - Typical Output Characteristics, TC = 175 °C

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91238	www.vishay.com
S11-0444-Rev. B, 14-Mar-11	3

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000