Vishay IRFP460LC, SiHFP460LC Data Sheet

IRFP460LC, SiHFP460LC

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)				500
RDS(on) (Ω)		VGS = 10 V			0.27
Qg (Max.) (nC)				120
Qgs (nC)				32
Qgd (nC)				49
Configuration				Single
						D
TO-247
		G
	S
	D					S
	G
		N-Channel MOSFET

FEATURES

• Ultra Low Gate Charge
• Reduced Gate Drive Requirement		Available
• Enhanced 30 V VGS Rating		RoHS*
• Reduced Ciss, Coss, Crss		COMPLIANT
•	Isolated Central Mounting Hole
• Dynamic dV/dt Rating
•	Repetitive Avalanche Rated
•	Lead (Pb)-free Available

DESCRIPTION

This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliabiltity of Power MOSFETs offer the designer a new standard in power transistors for switching applications.

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole.

ORDERING INFORMATION

	Package	TO-247
	Lead (Pb)-free	IRFP460LCPbF
		SiHFP460LC-E3
	SnPb	IRFP460LC
		SiHFP460LC

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER				SYMBOL	LIMIT	UNIT
Drain-Source Voltage				VDS	500	V
Gate-Source Voltage				VGS	± 30
Continuous Drain Current		VGS at 10 V	TC = 25 °C	ID	20
			TC = 100 °C		12	A
Pulsed Drain Currenta				IDM	80
Linear Derating Factor					2.2	W/°C
Single Pulse Avalanche Energyb				EAS	960	mJ
Repetitive Avalanche Currenta				IAR	20	A
Repetitive Avalanche Energya				EAR	28	mJ
Maximum Power Dissipation		TC = 25 °C		PD	280	W
Peak Diode Recovery dV/dtc				dV/dt	3.5	V/ns
Operating Junction and Storage Temperature Range				TJ, Tstg	- 55 to + 150	°C
Soldering Recommendations (Peak Temperature)		for 10 s			300d
Mounting Torque		6-32 or M3 screw			10	lbf · in
					1.1	N · m

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.VDD = 25 V, starting TJ = 25 °C, L = 4.3 mH, RG = 25 Ω, IAS = 20 A (see fig. 12).

c.ISD ≤ 20 A, dI/dt ≤ 160 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.

d.1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91235	www.vishay.com
S-81360-Rev. A, 28-Jul-08	1

IRFP460LC, SiHFP460LC

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER	SYMBOL	TYP.	MAX.	UNIT
Maximum Junction-to-Ambient	RthJA	-	-
Case-to-Sink, Flat, Greased Surface	RthCS	0.24	-	°C/W
Maximum Junction-to-Case (Drain)	RthJC	-	0.45

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

500

-

-

V

VDS Temperature Coefficient

VDS/TJ

Reference to 25 °C, ID = 1 mA

-

0.59

-

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

2.0

-

4.0

V

Gate-Source Leakage

IGSS

VGS = ± 20 V

-

-

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 500 V, VGS = 0 V

-

-

25

µA

VDS = 400 V, VGS = 0 V, TJ = 125 °C

-

-

250

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 12 Ab

-

-

0.27

Ω

Forward Transconductance

gfs

VDS = 50 V, ID = 12 Ab

12

-

-

S

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

-

3600

-

Output Capacitance

Coss

pF

VDS = 25 V,

-

440

-

f = 1.0 MHz, see fig. 5

Reverse Transfer Capacitance

Crss

-

39

-

Total Gate Charge

Qg

ID = 20 A, VDS = 400 V,

-

-

120

Gate-Source Charge

Qgs

VGS = 10 V

-

-

32

nC

see fig. 6 and 13b

Gate-Drain Charge

Qgd

-

-

49

Turn-On Delay Time

td(on)

-

18

-

Rise Time

tr

VDD = 250 V, ID = 20 A

-

77

-

ns

Turn-Off Delay Time

td(off)

R

G

= 4.3 Ω, R

D

= 12 Ω, see fig. 10b

-

40

-

Fall Time

tf

-

43

-

Internal Drain Inductance

LD

Between lead,

D

-

5.0

-

6 mm (0.25") from

nH

Internal Source Inductance

LS

package and center of

G

-

13

-

die contact

S

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

MOSFET symbol

D

-

-

20

showing the

A

Pulsed Diode Forward Currenta

ISM

integral reverse

G

-

-

80

p - n junction diode

S

Body Diode Voltage

VSD

TJ = 25 °C, IS = 20 A, VGS = 0 Vb

-

-

1.8

V

Body Diode Reverse Recovery Time

trr

T = 25 °C, I

= 20 A, dI/dt = 100 A/µsb

-

570

860

ns

F

Body Diode Reverse Recovery Charge

Qrr

J

-

6.6

9.9

µC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

www.vishay.com	Document Number: 91235
2	S-81360-Rev. A, 28-Jul-08

IRFP460LC, SiHFP460LC

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

		Fig. 3 - Typical Transfer Characteristics
Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, TC = 150 °C

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91235	www.vishay.com
S-81360-Rev. A, 28-Jul-08	3