Vishay IRFP460LC, SiHFP460LC Data Sheet

Power MOSFET

IRFP460LC, SiHFP460LC

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 500

R

(Ω)V

DS(on)

Q

(Max.) (nC) 120

g

Q

(nC) 32

gs

Q

(nC) 49

gd

Configuration Single

TO-247

= 10 V 0.27

GS

D

FEATURES

• Ultra Low Gate Charge

• Reduced Gate Drive Requirement

• Enhanced 30 V V

• Reduced C

• Isolated Central Mounting Hole

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Lead (Pb)-free Available

DESCRIPTION

This new series of low charge Power MOSFETs achieve
significantly lower gate charge over conventional MOSFETs.

G

Utilizing advanced Power MOSFETs technology the device
improvements allow for reduced gate drive requirements,
faster switching speeds and increased total system savings.

S

D

G

N-Channel MOSFET

S

These device improvements combined with the proven
ruggedness and reliabiltity of Power MOSFETs offer the
designer a new standard in power transistors for switching
applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because its isolated mounting hole.

ORDERING INFORMATION

Package TO-247

Lead (Pb)-free

SnPb

IRFP460LCPbF
SiHFP460LC-E3
IRFP460LC
SiHFP460LC

iss

, C

GS

oss

Rating

, C

rss

Available

RoHS*

COMPLIANT

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

C

= 100 °C 12

C

DS

± 30

GS

I

D

IDM 80
Linear Derating Factor 2.2 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt

b

a

a

= 25 °C P

c

C

Operating Junction and Storage Temperature Range T

E

AS

I

AR

E

AR

D

dV/dt 3.5 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= 25 V, starting TJ = 25 °C, L = 4.3 mH, RG = 25 Ω, IAS = 20 A (see fig. 12).

DD

≤ 20 A, dI/dt ≤ 160 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.

c. I

SD

d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91235 www.vishay.com
S-81360-Rev. A, 28-Jul-08 1

500

20

960 mJ

20 A
28 mJ

280 W

- 55 to + 150

d

10 lbf · in

1.1 N · m

V

AT

°C

IRFP460LC, SiHFP460LC

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.59 -

V

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

Drain-Source Body Diode Characteristics

DS

GS(th)

V

GSS

DSS

V

DS(on)

fs

iss

- 440 -

oss

-39-

rss

g

--32

gs

--49

gd

d(on)

r

-40-

d(off)

-43-

f

D

V

V

R

Between lead,
6 mm (0.25") from
package and center of

S

die contact

--

0.24 -

°C/WCase-to-Sink, Flat, Greased Surface R

-0.45

VGS = 0 V, ID = 250 µA 500 - -

VDS = VGS, ID = 250 µA 2.0 - 4.0 V

= ± 20 V - - ± 100 nA

GS

VDS = 500 V, VGS = 0 V - - 25

= 400 V, VGS = 0 V, TJ = 125 °C - - 250

DS

= 10 V ID = 12 A

GS

VDS = 50 V, ID = 12 A

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

b

b

--0.27Ω

12 - - S

- 3600 -

- - 120

= 20 A, VDS = 400 V,

I

= 10 V

GS

D

see fig. 6 and 13

b

-18-

V

= 250 V, ID = 20 A

DD

= 4.3 Ω, RD = 12 Ω, see fig. 10

G

G

b

D

S

-77-

-5.0-

-13-

V

V/°C

µA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

S

I

SM

SD

rr

rr

on

MOSFET symbol
showing the
integral reverse
p - n junction diode

TJ = 25 °C, IS = 20 A, VGS = 0 V

TJ = 25 °C, IF = 20 A, dI/dt = 100 A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

D

G

S

b

--20

--80

--1.8V

- 570 860 ns

b

A

-6.69.9µC

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

www.vishay.com Document Number: 91235
2 S-81360-Rev. A, 28-Jul-08

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

IRFP460LC, SiHFP460LC

Vishay Siliconix

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, T

= 150 °C

C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91235 www.vishay.com
S-81360-Rev. A, 28-Jul-08 3