IRFP460LC, SiHFP460LC
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) |
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500 |
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RDS(on) (Ω) |
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VGS = 10 V |
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0.27 |
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Qg (Max.) (nC) |
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120 |
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Qgs (nC) |
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32 |
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Qgd (nC) |
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49 |
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Configuration |
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Single |
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TO-247 |
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G |
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S |
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D |
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N-Channel MOSFET |
FEATURES
• Ultra Low Gate Charge |
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• Reduced Gate Drive Requirement |
Available |
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• Enhanced 30 V VGS Rating |
RoHS* |
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• Reduced Ciss, Coss, Crss |
COMPLIANT |
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Isolated Central Mounting Hole |
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• Dynamic dV/dt Rating |
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Repetitive Avalanche Rated |
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Lead (Pb)-free Available |
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DESCRIPTION
This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliabiltity of Power MOSFETs offer the designer a new standard in power transistors for switching applications.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole.
ORDERING INFORMATION
Package |
TO-247 |
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Lead (Pb)-free |
IRFP460LCPbF |
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SiHFP460LC-E3 |
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SnPb |
IRFP460LC |
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SiHFP460LC |
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ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER |
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SYMBOL |
LIMIT |
UNIT |
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Drain-Source Voltage |
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VDS |
500 |
V |
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Gate-Source Voltage |
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VGS |
± 30 |
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Continuous Drain Current |
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VGS at 10 V |
TC = 25 °C |
ID |
20 |
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TC = 100 °C |
12 |
A |
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Pulsed Drain Currenta |
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IDM |
80 |
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Linear Derating Factor |
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2.2 |
W/°C |
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Single Pulse Avalanche Energyb |
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EAS |
960 |
mJ |
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Repetitive Avalanche Currenta |
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IAR |
20 |
A |
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Repetitive Avalanche Energya |
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EAR |
28 |
mJ |
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Maximum Power Dissipation |
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TC = 25 °C |
PD |
280 |
W |
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Peak Diode Recovery dV/dtc |
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dV/dt |
3.5 |
V/ns |
Operating Junction and Storage Temperature Range |
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TJ, Tstg |
- 55 to + 150 |
°C |
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Soldering Recommendations (Peak Temperature) |
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for 10 s |
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300d |
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Mounting Torque |
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6-32 or M3 screw |
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10 |
lbf · in |
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1.1 |
N · m |
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Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.VDD = 25 V, starting TJ = 25 °C, L = 4.3 mH, RG = 25 Ω, IAS = 20 A (see fig. 12).
c.ISD ≤ 20 A, dI/dt ≤ 160 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d.1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91235 |
www.vishay.com |
S-81360-Rev. A, 28-Jul-08 |
1 |
IRFP460LC, SiHFP460LC
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER |
SYMBOL |
TYP. |
MAX. |
UNIT |
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Maximum Junction-to-Ambient |
RthJA |
- |
- |
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Case-to-Sink, Flat, Greased Surface |
RthCS |
0.24 |
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°C/W |
Maximum Junction-to-Case (Drain) |
RthJC |
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0.45 |
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER |
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SYMBOL |
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TEST CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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Static |
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Drain-Source Breakdown Voltage |
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VDS |
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VGS = 0 V, ID = 250 µA |
500 |
- |
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V |
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VDS Temperature Coefficient |
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VDS/TJ |
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Reference to 25 °C, ID = 1 mA |
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0.59 |
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V/°C |
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Gate-Source Threshold Voltage |
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VGS(th) |
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VDS = VGS, ID = 250 µA |
2.0 |
- |
4.0 |
V |
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Gate-Source Leakage |
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IGSS |
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VGS = ± 20 V |
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± 100 |
nA |
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Zero Gate Voltage Drain Current |
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IDSS |
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VDS = 500 V, VGS = 0 V |
- |
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25 |
µA |
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VDS = 400 V, VGS = 0 V, TJ = 125 °C |
- |
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250 |
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Drain-Source On-State Resistance |
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RDS(on) |
VGS = 10 V |
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ID = 12 Ab |
- |
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0.27 |
Ω |
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Forward Transconductance |
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gfs |
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VDS = 50 V, ID = 12 Ab |
12 |
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S |
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Dynamic |
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Input Capacitance |
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Ciss |
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VGS = 0 V, |
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3600 |
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Output Capacitance |
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Coss |
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pF |
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VDS = 25 V, |
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440 |
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f = 1.0 MHz, see fig. 5 |
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Reverse Transfer Capacitance |
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Crss |
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39 |
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Total Gate Charge |
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Qg |
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ID = 20 A, VDS = 400 V, |
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120 |
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Gate-Source Charge |
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Qgs |
VGS = 10 V |
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32 |
nC |
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see fig. 6 and 13b |
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Gate-Drain Charge |
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Qgd |
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- |
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49 |
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Turn-On Delay Time |
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td(on) |
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18 |
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Rise Time |
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tr |
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VDD = 250 V, ID = 20 A |
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77 |
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ns |
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Turn-Off Delay Time |
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td(off) |
R |
G |
= 4.3 Ω, R |
D |
= 12 Ω, see fig. 10b |
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40 |
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Fall Time |
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tf |
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43 |
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Internal Drain Inductance |
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LD |
Between lead, |
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D |
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5.0 |
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6 mm (0.25") from |
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nH |
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Internal Source Inductance |
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LS |
package and center of |
G |
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13 |
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die contact |
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Drain-Source Body Diode Characteristics |
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Continuous Source-Drain Diode Current |
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IS |
MOSFET symbol |
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D |
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20 |
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showing the |
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A |
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Pulsed Diode Forward Currenta |
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ISM |
integral reverse |
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G |
- |
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80 |
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p - n junction diode |
S |
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Body Diode Voltage |
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VSD |
TJ = 25 °C, IS = 20 A, VGS = 0 Vb |
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1.8 |
V |
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Body Diode Reverse Recovery Time |
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trr |
T = 25 °C, I |
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= 20 A, dI/dt = 100 A/µsb |
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570 |
860 |
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F |
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Body Diode Reverse Recovery Charge |
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Qrr |
J |
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6.6 |
9.9 |
µC |
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Forward Turn-On Time |
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ton |
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) |
Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com |
Document Number: 91235 |
2 |
S-81360-Rev. A, 28-Jul-08 |
IRFP460LC, SiHFP460LC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
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Fig. 3 - Typical Transfer Characteristics |
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Fig. 1 - Typical Output Characteristics, TC = 25 °C |
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Fig. 2 - Typical Output Characteristics, TC = 150 °C |
Fig. 4 - Normalized On-Resistance vs. Temperature |
Document Number: 91235 |
www.vishay.com |
S-81360-Rev. A, 28-Jul-08 |
3 |