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IRFD113
Data Sheet
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Vishay IRFD113, SiHFD113 Data Sheet

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HVMDIP
D
S
G
IRFD113, SiHFD113
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) 60
R
(Ω)V
DS(on)
Q
(Max.) (nC) 7
g
Q
(nC) 2
gs
Q
(nC) 7
gd
Configuration Single
= 10 V 0.8
GS
G
N-Channel MOSFET
FEATURES
• For Automatic Insertion
• Compact Plastic Package
•End Stackable
• Fast Switching
• Low Drive Current
• Easily Paralleled
• Excellent Temperature Stability
D
• Compliant to RoHS Directive 2002/95/EC
Note
* Pb containing terminations are not RoHS compliant, exemptions
may apply
DESCRIPTION
The HVMDIP technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HVMDIP design achieves
S
very low on-state resistance combined with high transconductance and extreme device ruggedness. HVMDIPs feature all of the established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling, and temperature stability of the electrical parameters. The HVMDIP 4 pin, dual-in-line package brings the advantages of HVMDIPs to high volume applications where automatic PC board insertion is desireable, such as circuit boards for computers, printers, telecommunications equipment, and consumer products. Their compatibility with automatic insertion equipment, low-profile and end stackable features represent the stat-of-the-art in power device packaging.
ORDERING INFORMATION
Package HVMDIP
Lead (Pb)-free
IRFD113PbF SiHFD113-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage
Gate-Source Voltage V
Continuous Drain Current V
Pulsed Drain Current
Linear Derating Factor 0.008 W/°C
Inductive Current, Clamped L = 100 μH I
Maximum Power Dissipation T
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak Temperature) for 10 s 300
Notes
a. T
= 25 °C to 150 °C
J
b. Repetitive rating; pulse width limited by maximum junction temperature. c. 1.6 mm from case.
S11-2479-Rev. A, 19-Dec-11
a
at 10 V TC = 25 °C I
b
GS
= 25 °C P
C
1
V
DS
± 20
GS
D
IDM 6.4
LM
D
, T
J
stg
- 55 to + 150
60
0.8
6.4 A
1.0 W
c
Document Number: 91487
V
A
°C
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
IRFD113, SiHFD113
www.vishay.com
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
thJA
- 120 °C/W
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
b
b
R
b
DS
GS(th)
V
GSS
DSS
I
D(on)
DS(on)
g
fs
VDS = max. rating x 0.8, VGS = 0 V, TC = 125 °C
V
VGS = 10 V ID = 0.8 A - 0.6 0.8 Ω
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
iss
-80100
oss
-2025
rss
g
-2-
gs
-7-
gd
d(on)
r
-1525
d(off)
-1020
f
D
S
Between lead, 2 mm (0.08") from package and center of die contact
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current I
Body Diode Voltage
a
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
SM
V
SD
rr
rr
on
MOSFET symbol showing the
integral reverse p - n junction diode
TJ = 150 °C, IF = 1.0 A, dI/dt = 100 A/μs
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
VGS = 0 V, ID = 250 μA 60 - -
VDS = VGS, ID = 250 μA 2.0 - 4.0
= ± 20 V - - ± 500 nA
GS
VDS = max. rating, VGS = 0 V - - 250
= 10 V VDS > I
GS
VDS > I
D(on)
x R
DS(on)
D(on)
x R
max. 0.8 - - A
DS(on)
max., ID = 0.8 A 0.8 1.2 - S
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz
= 4 A,
I
V
GS
= 10 V
V
= 0.5 VDS , ID = 0.8 A,
DD
R
D
V
= 0.8 max. rating
DS
= 50 Ω
g
D
G
S
D
G
S
TA = 25 °C, IS = 0.8 A, VGS = 0 V - - 2 V
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Vishay Siliconix
- - 1000
- 135 200
-57
-1020
-1525
-4.0-
-6.0-
--0.8
--6.4
- 100 - ns
-0.2-μC
V
μA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
A
S11-2479-Rev. A, 19-Dec-11
2
Document Number: 91487
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRFD113, SiHFD113
Vishay Siliconix
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Transfer Characteristics
Fig. 3 - Typical Saturation Characteristics
Fig. 4 - Maximum Safe Operatung Area
S11-2479-Rev. A, 19-Dec-11
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
3
Document Number: 91487
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IRFD113, SiHFD113
Vishay Siliconix
Fig. 5 - Typical Transconductance vs. Drain Current
Fig. 6 - Typical Source-Drain Diode Forward Voltage
Fig. 7 - Breakdown Voltage vs. Temperature
Fig. 8 - Normalized On-Resistance vs. Temperature
S11-2479-Rev. A, 19-Dec-11
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
4
Document Number: 91487
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IRFD113, SiHFD113
Vishay Siliconix
Fig. 9 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 10 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 11 - Typical On-Resistance vs. Darin Current
Fig. 12 - Maximum Darin Current vs. Case Temperature
S11-2479-Rev. A, 19-Dec-11
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
5
Document Number: 91487
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I
P
E
C
V
DS
V
DD
I
L
Fig. 13 - Power vs. Temperature Derating
IRFD113, SiHFD113
Vishay Siliconix
Fig. 17 - Gate Charge Test Circuit
Fig. 14 - Clamped Inductive Test Circuit
Fig. 15 - Clamped Inductive Waveforms
Fig. 18 - Typical Time to Accumulated 1 % Gate Failure
Fig. 16 - Switching Time Test Circuit
S11-2479-Rev. A, 19-Dec-11
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Fig. 19 - Typical High Temperature Reverse Bias (HTRB) Failure
6
Rate
Document Number: 91487
www.vishay.com
IRFD113, SiHFD113
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T.
+
-
R
g
Driver gate drive
P.W.
+
-
Period
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
• dV/dt controlled by R
• Driver same type as D.U.T.
I
controlled by duty factor “D”
•
SD
• D.U.T. - device under test
-
D =
g
P.W.
Period
+
+
V
DD
-
V
= 10 Va
GS
D.U.T. l
Reverse recovery current
D.U.T. V
Re-applied voltage
Inductor current
Note
a. V
waveform
SD
Body diode forward
waveform
DS
Body diode forward drop
Ripple ≤ 5 %
= 5 V for logic level devices
GS
current
dI/dt
Diode recovery
dV/dt
V
DD
I
SD
Fig. 20 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91487
S11-2479-Rev. A, 19-Dec-11
.
7
Document Number: 91487
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
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Revision: 13-Jun-16
1
Document Number: 91000
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