Vishay IRFD110, SiHFD110 Data Sheet

IRFD110, SiHFD110

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)		100
RDS(on) ( )	VGS = 10 V	0.54
Qg (Max.) (nC)		8.3
Qgs (nC)		2.3
Qgd (nC)		3.8
Configuration		Single
		D
	HVMDIP
	G
	S
	G
D		S
	N-Channel MOSFET

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated	Available

	• For Automatic Insertion	RoHS*
		COMPLIANT

•End Stackable

•175 °C Operating Temperature

•Fast Switching and Ease of Paralleling

•Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.

ORDERING INFORMATION
Package				HVMDIP
Lead (Pb)-free				IRFD110PbF
				SiHFD110-E3
SnPb				IRFD110
				SiHFD110
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER						SYMBOL	LIMIT		UNIT
Drain-Source Voltage						VDS	100		V
Gate-Source Voltage						VGS	± 20
Continuous Drain Current		VGS at 10 V		TA = 25 °C		ID	1.0
				TA = 100 °C			0.71		A
Pulsed Drain Currenta						IDM	8.0
Linear Derating Factor							0.0083		W/°C
Single Pulse Avalanche Energyb						EAS	140		mJ
Repetitive Avalanche Currenta						IAR	1.0		A
Repetitive Avalanche Energya						EAR	0.13		mJ
Maximum Power Dissipation		TA = 25 °C				PD	1.3		W
Peak Diode Recovery dV/dtc						dV/dt	5.5		V/ns
Operating Junction and Storage Temperature Range						TJ, Tstg	- 55 to + 175		°C
Soldering Recommendations (Peak Temperature)		for 10 s					300d
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 52 mH, Rg = 25 , IAS = 2.0 A (see fig. 12).
c. ISD 5.6 A, dI/dt 75 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91127								www.vishay.com
S10-2466-Rev. C, 25-Oct-10								1

IRFD110, SiHFD110

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER	SYMBOL	TYP.	MAX.	UNIT
Maximum Junction-to-Ambient	RthJA	-	120	°C/W

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER		SYMBOL	TEST CONDITIONS								MIN.	TYP.	MAX.	UNIT
Static
Drain-Source Breakdown Voltage		VDS	VGS = 0 V, ID = 250 μA								100	-	-	V
VDS Temperature Coefficient		VDS/TJ	Reference to 25 °C, ID = 1 mA								-	0.12	-	V/°C
Gate-Source Threshold Voltage		VGS(th)	VDS = VGS, ID = 250 μA								2.0	-	4.0	V
Gate-Source Leakage		IGSS		VGS = ± 20 V							-	-	± 100	nA
Zero Gate Voltage Drain Current		IDSS	VDS = 100 V, VGS = 0 V								-	-	25	μA
			VDS = 80 V, VGS = 0 V, TJ = 150 °C								-	-	250
Drain-Source On-State Resistance		RDS(on)	VGS = 10 V		ID = 0.60 Ab						-	-	0.54
Forward Transconductance		gfs	VDS = 50 V, ID = 0.60 Ab								0.80	-	-	S
Dynamic
Input Capacitance		Ciss			VGS = 0 V,						-	180	-
Output Capacitance		Coss												pF
					VDS = 25 V,						-	81	-
			f = 1.0 MHz, see fig. 5
Reverse Transfer Capacitance		Crss									-	15	-
Total Gate Charge		Qg			ID = 5.6 A, VDS = 80 V,						-	-	8.3
Gate-Source Charge		Qgs	VGS = 10 V								-	-	2.3	nC
					see fig. 6 and 13b
Gate-Drain Charge		Qgd									-	-	3.8
Turn-On Delay Time		td(on)									-	6.9	-
Rise Time		tr	VDD = 50 V, ID = 5.6 A,								-	16	-	ns
Turn-Off Delay Time		td(off)	Rg = 24 , RD = 8.4			, see fig. 10b					-	15	-
Fall Time		tf									-	9.4	-
Internal Drain Inductance		LD	Between lead,						D		-	4.0	-
			6 mm (0.25") from
			package and center of			G								nH
Internal Source Inductance		LS	die contact						S		-	6.0	-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current		IS	MOSFET symbol							D	-	-	1.0
			showing the											A
			integral reverse			G
Pulsed Diode Forward Currenta
		ISM	p - n junction diode							S	-	-	8.0
Body Diode Voltage		VSD	TJ = 25 °C, IS = 1.0 A, VGS = 0 Vb								-	-	2.5	V
Body Diode Reverse Recovery Time		trr	TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/μsb								-	100	200	ns
Body Diode Reverse Recovery Charge		Qrr									-	0.44	0.88	μC
Forward Turn-On Time		ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width 300 μs; duty cycle 2 %.

www.vishay.com	Document Number: 91127
2	S10-2466-Rev. C, 25-Oct-10

IRFD110, SiHFD110

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

	Top	VGS
		15 V
	101	10 V
<![if ! IE]> <![endif]>(A)		8.0 V
		7.0 V
<![if ! IE]> <![endif]>Current		6.0 V
		5.5 V
		5.0 V
	Bottom	4.5 V
<![if ! IE]> <![endif]>,Drain	100
			4.5 V
<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>I
			20 µs Pulse Width
			TA = 25 °C
	10-1	100	101

91127_01

VDS, Drain-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics, TA = 25 °C

	101
<![if ! IE]> <![endif]>(A)							25	°C
											175	°C
<![if ! IE]> <![endif]>CurrentDrain,	100
<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>I
	10-1												20 µs Pulse Width
													VDS = 50 V
	4		5		6		7				8					9		10
91127_03			VGS, Gate-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

VGS

		101	Top	15 V
				10 V
	<![if ! IE]> <![endif]>(A)			8.0 V
				7.0 V
	<![if ! IE]> <![endif]>Current
				6.0 V
				5.5 V
				5.0 V
		100	Bottom	4.5 V	4.5 V
	<![if ! IE]> <![endif]>, Drain
	<![if ! IE]> <![endif]>D
	<![if ! IE]> <![endif]>I
					20 µs Pulse Width
					TA = 175 °C
		10-1		100	101

91127_02

VDS, Drain-to-Source Voltage (V)

<![if ! IE]>

<![endif]>RDS(on), Drain-to-Source On Resistance (Normalized)

91127_04

3.0
		ID = 5.6 A
2.5		VGS = 10 V
2.0
1.5
1.0
0.5

0.0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 180

TJ, Junction Temperature (°C)

Fig. 2 - Typical Output Characteristics, TA = 175 °C

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91127	www.vishay.com
S10-2466-Rev. C, 25-Oct-10	3