Vishay IRFD110, SiHFD110 Data Sheet

Power MOSFET

N-Channel MOSFET

G

D

S

HVMDIP

D

S

G

IRFD110, SiHFD110

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 100

R

()V

DS(on)

Q

(Max.) (nC) 8.3

g

Q

(nC) 2.3

gs

Q

(nC) 3.8

gd

Configuration Single

= 10 V 0.54

GS

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• For Automatic Insertion

•End Stackable

• 175 °C Operating Temperature

• Fast Switching and Ease of Paralleling

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable
case style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain serves as a thermal
link to the mounting surface for power dissipation levels up
to 1 W.

ORDERING INFORMATION

Package HVMDIP

Lead (Pb)-free

SnPb

IRFD110PbF
SiHFD110-E3
IRFD110
SiHFD110

Available

RoHS*

COMPLIANT

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

= 25 °C

T

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

A

= 100 °C 0.71

A

DS

± 20

GS

I

D

IDM 8.0

Linear Derating Factor 0.0083 W/°C

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range T

b

a

a

= 25 °C P

A

c

E

AS

I

AR

E

AR

D

dV/dt 5.5 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= 25 V, starting TJ = 25 °C, L = 52 mH, Rg = 25 , IAS = 2.0 A (see fig. 12).

DD

c. I

 5.6 A, dI/dt  75 A/μs, VDD  VDS, TJ  175 °C.

SD

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91127 www.vishay.com
S10-2466-Rev. C, 25-Oct-10 1

100

1.0

140 mJ

1.0 A

0.13 mJ

1.3 W

- 55 to + 175

d

V

AT

°C

IRFD110, SiHFD110

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

thJA

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.12 - V/°C

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.

DS

GS(th)

V

GSS

DSS

VGS = 10 V ID = 0.60 A

DS(on)

fs

iss

-81-

oss

-15-

rss

g

--2.3

gs

--3.8

gd

d(on)

r

-15-

d(off)

-9.4-

f

D

V

V

GS

R

Between lead,
6 mm (0.25") from
package and center of

S

S

die contact

MOSFET symbol
showing the

integral reverse

I

SM

SD

rr

rr

on

p - n junction diode

TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/μs

- 120 °C/W

VGS = 0 V, ID = 250 μA 100 - - V

VDS = VGS, ID = 250 μA 2.0 - 4.0 V

= ± 20 V - - ± 100 nA

GS

VDS = 100 V, VGS = 0 V - - 25

= 80 V, VGS = 0 V, TJ = 150 °C - - 250

DS

VDS = 50 V, ID = 0.60 A

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

b

b

- - 0.54 

0.80 - - S

- 180 -

--8.3

= 5.6 A, VDS = 80 V,

I

= 10 V

D

see fig. 6 and 13

b

-6.9-

V

= 50 V, ID = 5.6 A,

DD

= 24 , RD = 8.4 , see fig. 10

g

G

G

TJ = 25 °C, IS = 1.0 A, VGS = 0 V

b

D

S

D

S

b

-16-

-4.0-

-6.0-

--1.0

--8.0

--2.5V

- 100 200 ns

b

- 0.44 0.88 μC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

www.vishay.com Document Number: 91127
2 S10-2466-Rev. C, 25-Oct-10

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

91127_02

10

1

10

0

10

0

10

1

10

-1

Bottom

To p

V

GS

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width
T

A

= 175 °C

4.5 V

VDS, Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

91127_03

10

1

10

0

I

D

, Drain Current (A)

V

GS

,

Gate-to-Source Voltage (V)

5678910

4

10

-1

25 °C

175 °C

20 µs Pulse Width
V

DS

= 50 V

91127_04

I

D

= 5.6 A

V

GS

= 10 V

3.0

0.0

0.5

1.0

1.5

2.0

2.5

- 60 - 40 - 20 0 20 406080 100 120 140 160

T

J

,

Junction Temperature (°C)

R

DS(on)

, Drain-to-Source On Resistance

(Normalized)

180

V

15 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

GS

To p

1

10

Bottom

0

10

IRFD110, SiHFD110

Vishay Siliconix

, Drain Current (A)

D

I

4.5 V

20 µs Pulse Width

= 25 °C

T

A

91127_01

-1

10

0

10

VDS, Drain-to-Source Voltage (V)

1

10

Fig. 1 - Typical Output Characteristics, TA = 25 °C

Fig. 3 - Typical Transfer Characteristics

Document Number: 91127 www.vishay.com
S10-2466-Rev. C, 25-Oct-10 3

Fig. 2 - Typical Output Characteristics, T

= 175 °C

A

Fig. 4 - Normalized On-Resistance vs. Temperature