Vishay IRFBG30, SiHFBG30 Data Sheet

IRFBG30, SiHFBG30

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)

1000

RDS(on) (Ω)

VGS = 10 V

5.0

Qg (Max.) (nC)

Qgs (nC)

Qgd (nC)

Configuration

Single

TO-220AB

N-Channel MOSFET

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated	Available

	• Fast Switching	RoHS*
	• Fast Switching	COMPLIANT
		COMPLIANT

•Ease of Paralleling

•Simple Drive Requirements

•Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

ORDERING INFORMATION
Package		TO-220AB
Lead (Pb)-free		IRFBG30PbF

		SiHFBG30-E3
		SiHFBG30-E3
SnPb		IRFBG30
SnPb		SiHFBG30
		SiHFBG30


ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER			SYMBOL	LIMIT		UNIT

Drain-Source Voltage			VDS	1000		V
Gate-Source Voltage			VGS	± 20		V
Gate-Source Voltage			VGS	± 20
Continuous Drain Current	VGS at 10 V	TC = 25 °C	ID	3.1
Continuous Drain Current	VGS at 10 V	TC = 100 °C	ID	2.0		A
		TC = 100 °C		2.0		A
Pulsed Drain Currenta			IDM	12
Linear Derating Factor				1.0		W/°C

Single Pulse Avalanche Energyb			EAS	280		mJ
Repetitive Avalanche Currenta			IAR	3.1		A
Repetitive Avalanche Energya			EAR	13		mJ
Maximum Power Dissipation	TC = 25 °C		PD	125		W
Peak Diode Recovery dV/dtc			dV/dt	1.0		V/ns
Operating Junction and Storage Temperature Range			TJ, Tstg	- 55 to + 150		°C
Soldering Recommendations (Peak Temperature)	for 10 s			300d		°C
Soldering Recommendations (Peak Temperature)	for 10 s			300d
Mounting Torque	6-32 or M3 screw			10		lbf · in

				1.1		N · m
				1.1		N · m

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 55 mH, Rg = 25 Ω, IAS = 3.1 A (see fig. 12).
c. ISD ≤ 3.1 A, dI/dt ≤ 80 A/μs, VDD ≤ 600, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91124					www.vishay.com
S11-0517-Rev. B, 21-Mar-11					1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFBG30, SiHFBG30

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER	SYMBOL	TYP.	MAX.	UNIT

Maximum Junction-to-Ambient	RthJA	-	62
Case-to-Sink, Flat, Greased Surface	RthCS	0.50	-	°C/W
Maximum Junction-to-Case (Drain)	RthJC	-	1.0

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

1000

VDS Temperature Coefficient

VDS/TJ

Reference to 25 °C, ID = 1 mA

1.4

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.0

4.0

Gate-Source Leakage

IGSS

VGS = ± 20 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 1000 V, VGS = 0 V

100

μA

VDS = 800 V, VGS = 0 V, TJ = 125 °C

500

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 1.9 Ab

5.0

Forward Transconductance

= 10 V, I = 1.9 Ab

2.1

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

980

Output Capacitance

Coss

VDS = 25 V,

140

Reverse Transfer Capacitance

Crss

f = 1.0 MHz, see fig. 5

Total Gate Charge

ID = 3.1 A, VDS =400 V,

Gate-Source Charge

Qgs

VGS = 10 V

see fig. 6 and 13b

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

Rise Time

VDD = 500 V, ID = 3.1 A

Turn-Off Delay Time

td(off)

Rg = 12 Ω, RD = 170 Ω, see fig. 10b

Fall Time

Internal Drain Inductance

Between lead,

4.5

6 mm (0.25") from

Internal Source Inductance

package and center of

7.5

die contact

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

3.1

showing the

integral reverse

Pulsed Diode Forward Currenta

ISM

p - n junction diode

Body Diode Voltage

VSD

TJ = 25 °C, IS = 3.1 A, VGS = 0 Vb

1.8

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 3.1 A, dI/dt = 100 A/μsb

410

620

Body Diode Reverse Recovery Charge

Qrr

1.3

2.0

μC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width ≤ 300 μs; duty cycle ≤ 2 %.

www.vishay.com	Document Number: 91124
2	S11-0517-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFBG30, SiHFBG30

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

	Fig. 1 - Typical Output Characteristics, TC = 25 °C					Fig. 3 - Typical Transfer Characteristics
	Fig. 1 - Typical Output Characteristics, TC = 25 °C					Fig. 3 - Typical Transfer Characteristics

Fig. 2 - Typical Output Characteristics, TC = 150 °C

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91124	www.vishay.com
S11-0517-Rev. B, 21-Mar-11	3

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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