IRFBF30, SiHFBF30
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) |
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900 |
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RDS(on) ( ) |
VGS = 10 V |
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3.7 |
Qg (Max.) (nC) |
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78 |
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Qgs (nC) |
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10 |
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Qgd (nC) |
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42 |
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Configuration |
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Single |
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D
TO-220AB
G
S
D
G S
N-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated |
Available |
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• Fast Switching |
RoHS* |
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COMPLIANT |
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•Ease of Paralleling
•Simple Drive Requirements
•Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universially preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
ORDERING INFORMATION
Package |
TO-220AB |
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Lead (Pb)-free |
IRFBF30PbF |
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SiHFBF30-E3 |
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SnPb |
IRFBF30 |
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SiHFBF30 |
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ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER |
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SYMBOL |
LIMITE |
UNIT |
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Drain-Source Voltage |
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VDS |
900 |
V |
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Gate-Source Voltage |
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VGS |
± 20 |
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Continuous Drain Current |
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VGS at 10 V |
TC = 25 °C |
ID |
3.6 |
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TC = 100 °C |
2.3 |
A |
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Pulsed Drain Currenta |
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IDM |
14 |
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Linear Derating Factor |
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1.0 |
W/°C |
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Single Pulse Avalanche Energyb |
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EAS |
250 |
mJ |
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Repetitive Avalanche Currenta |
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IAR |
3.6 |
A |
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Repetitive Avalanche Energya |
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EAR |
13 |
mJ |
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Maximum Power Dissipation |
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TC = 25 °C |
PD |
125 |
W |
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Peak Diode Recovery dV/dtc |
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dV/dt |
1.5 |
V/ns |
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Operating Junction and Storage Temperature Range |
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TJ, Tstg |
- 55 to + 150 |
°C |
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Soldering Recommendations (Peak Temperature) |
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for 10 s |
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300d |
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Mounting Torque |
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6-32 or M3 screw |
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10 |
lbf · in |
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1.1 |
N · m |
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Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.VDD = 50 V, starting TJ = 25 °C, L = 36 mH, Rg = 25 , IAS = 3.6 A (see fig. 12).
c.ISD 3.6 A, dI/dt 70 A/μs, VDD 600, TJ 150 °C.
d.1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91122 |
www.vishay.com |
S11-0516-Rev. B, 21-Mar-11 |
1 |
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBF30, SiHFBF30
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER |
SYMBOL |
TYP. |
MAX. |
UNIT |
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Maximum Junction-to-Ambient |
RthJA |
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62 |
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Case-to-Sink, Flat, Greased Surface |
RthCS |
0.50 |
- |
°C/W |
Maximum Junction-to-Case (Drain) |
RthJC |
- |
1.0 |
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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER |
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SYMBOL |
TEST CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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Static |
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Drain-Source Breakdown Voltage |
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VDS |
VGS = 0 V, ID = 250 μA |
900 |
- |
- |
V |
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VDS Temperature Coefficient |
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VDS/TJ |
Reference to 25 °C, ID = 1 mA |
- |
1.1 |
- |
V/°C |
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Gate-Source Threshold Voltage |
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VGS(th) |
VDS = VGS, ID = 250 μA |
2.0 |
- |
4.0 |
V |
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Gate-Source Leakage |
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IGSS |
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VGS = ± 20 V |
- |
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± 100 |
nA |
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Zero Gate Voltage Drain Current |
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IDSS |
VDS = 900 V, VGS = 0 V |
- |
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100 |
μA |
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VDS = 720 V, VGS = 0 V, TJ = 125 °C |
- |
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500 |
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Drain-Source On-State Resistance |
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RDS(on) |
VGS = 10 V |
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ID = 2.2 Ab |
- |
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3.7 |
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Forward Transconductance |
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gfs |
VDS = 100 V, ID = 2.2 Ab |
2.3 |
- |
- |
S |
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Dynamic |
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Input Capacitance |
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Ciss |
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VGS = 0 V, |
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1200 |
- |
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Output Capacitance |
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Coss |
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VDS = 25 V, |
- |
320 |
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pF |
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f = 1.0 MHz, see fig. 5 |
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Reverse Transfer Capacitance |
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Crss |
- |
200 |
- |
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Total Gate Charge |
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Qg |
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ID = 3.6 A, VDS = 360 V, |
- |
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78 |
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Gate-Source Charge |
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Qgs |
VGS = 10 V |
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- |
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10 |
nC |
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see fig. 6 and 13b |
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Gate-Drain Charge |
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Qgd |
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- |
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42 |
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Turn-On Delay Time |
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td(on) |
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14 |
- |
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Rise Time |
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tr |
VDD = 450 V, ID = 3.6 A, |
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25 |
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ns |
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Turn-Off Delay Time |
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td(off) |
Rg = 12 , RD = 120 , see fig. 10b |
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90 |
- |
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Fall Time |
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tf |
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30 |
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Internal Drain Inductance |
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LD |
Between lead, |
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D |
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4.5 |
- |
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6 mm (0.25") from |
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package and center of |
G |
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nH |
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Internal Source Inductance |
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LS |
die contact |
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S |
- |
7.5 |
- |
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Drain-Source Body Diode Characteristics |
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Continuous Source-Drain Diode Current |
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IS |
MOSFET symbol |
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D |
- |
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3.6 |
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showing the |
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A |
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Pulsed Diode Forward Currenta |
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ISM |
integral reverse |
G |
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- |
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14 |
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p - n junction diode |
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S |
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Body Diode Voltage |
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VSD |
TJ = 25 °C, IS = 3.6 A, VGS = 0 Vb |
- |
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1.8 |
V |
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Body Diode Reverse Recovery Time |
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trr |
TJ = 25 °C, IF = 3.6 A, dI/dt = 100 A/μsb |
- |
430 |
650 |
ns |
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Body Diode Reverse Recovery Charge |
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Qrr |
- |
1.4 |
2.1 |
μC |
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Forward Turn-On Time |
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ton |
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) |
Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.Pulse width 300 μs; duty cycle 2 %.
www.vishay.com |
Document Number: 91122 |
2 |
S11-0516-Rev. B, 21-Mar-11 |
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBF30, SiHFBF30
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, TC = 25 °C |
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Fig. 3 - Typical Transfer Characteristics |
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Fig. 2 -Typical Output Characteristics, TC = 150 °C |
Fig. 4 - Normalized On-Resistance vs. Temperature |
Document Number: 91122 |
www.vishay.com |
S11-0516-Rev. B, 21-Mar-11 |
3 |
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000