Vishay IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Data Sheet
N-Channel MOSFET
G
D
S
D2PAK
(TO-263)
G
D
S
I2PAK
(TO-262)
G
D
S
IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) 800
R
()V
DS(on)
Q
(Max.) (nC) 78
g
Q
(nC) 9.6
gs
Q
(nC) 45
gd
Configuration Single
= 10 V 3.0
GS
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
•Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
ORDERING INFORMATION
Package D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262)
a
Lead (Pb)-free and Halogen-free SiHFBE30S-GE3 SiHFBE30STRL-GE3
Lead (Pb)-free
Note
a. See device orientation.
IRFBE30SPbF IRFBE30STRLPbF
SiHFBE30S-E3 SiHFBE30STL-E3
SiHFBE30L-GE3
a
IRFBE30LPbF
a
SiHFBE30L-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
T
= 100 °C 2.6
C
DS
± 20
GS
I
D
IDM 16
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energy
Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
b
a
= 25 °C P
c
C
E
AS
I
AR
E
AR
D
dV/dt 2.0 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Mounting Torque 6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
= 50 V, starting TJ = 25 °C, L = 29 mH, Rg = 25 , IAS = 4.1 A (see fig. 12).
b. V
DD
c. ISD 4.1 A, dI/dt 100 A/μs, VDD 600 V, TJ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91119
S11-1053-Rev. C, 30-May-11 1
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This document is subject to change without notice.
www.vishay.com
800
4.1
260 mJ
4.1 A
13 mJ
125 W
- 55 to + 150
d
10 lbf · in
1.1 N · m
www.vishay.com/doc?91000
V
A
°C
IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain) R
thJA
thCS
thJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.90 - V/°C
V
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
DS
GS(th)
V
GSS
DSS
VGS = 10 V ID = 2.5 A
DS(on)
fs
iss
- 310 -
oss
- 190 -
rss
g
--9.6
gs
--45
gd
d(on)
r
-82-
d(off)
-30-
f
D
S
S
I
SM
SD
rr
rr
on
--62
-0.50-
--1.0
VGS = 0 V, ID = 250 μA 800 - - V
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
= ± 20 V - - ± 100 nA
GS
VDS = 800 V, VGS = 0 V - - 100
V
= 640 V, VGS = 0 V, TJ = 125 °C - - 500
DS
b
--3.0
VDS = 100 V, ID = 2.5 A 2.5 - - S
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
- 1300 -
--78
= 4.1 A, VDS = 400 V,
I
V
= 10 V
GS
D
see fig. 6 and 13
b
-12-
V
= 400 V, ID = 4.1 A,
DD
R
= 12 , RD = 95 , see fig. 10
g
Between lead,
6 mm (0.25") from
package and center of
die contact
G
MOSFET symbol
showing the
integral reverse
G
p - n junction diode
TJ = 25 °C, IS = 4.1 A, VGS = 0 V
TJ = 25 °C, IF = 4.1 A, dI/dt = 100 A/μs
b
D
S
D
S
b
-33-
-4.5-
-7.5-
--4.1
--16
--1.8V
- 480 720 ns
b
-1.82.7nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
°C/WCase-to-Sink, Flat, Greased Surface R
μA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
A
www.vishay.com Document Number: 91119
2 S11-1053-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, T
= 150 °C
C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91119 www.vishay.com
S11-1053-Rev. C, 30-May-11 3
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This document is subject to change without notice.
www.vishay.com/doc?91000
IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
www.vishay.com Document Number: 91119
4 S11-1053-Rev. C, 30-May-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This document is subject to change without notice.
www.vishay.com/doc?91000
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