Vishay IRFBE30, SiHFBE30 Data Sheet

TO-220AB

G

D

S

Available

RoHS*

COMPLIANT

Power MOSFET

IRFBE30, SiHFBE30

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 800

R

()V

DS(on)

Q

(Max.) (nC) 78

g

Q

(nC) 9.6

gs

Q

(nC) 45

gd

Configuration Single

= 10 V 3.0

GS

D

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

•Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and

G

cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation

S

N-Channel MOSFET

levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free

SnPb

IRFBE30PbF
SiHFBE30-E3
IRFBE30
SiHFBE30

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

= 25 °C

T

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

C

= 100 °C 2.6

C

DS

± 20

GS

I

D

IDM 16

Linear Derating Factor 1.0 W/°C

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

b

a

a

= 25 °C P

c

C

Operating Junction and Storage Temperature Range T

E

AS

I

AR

E

AR

D

dV/dt 2.0 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= 50 V, starting TJ = 25 °C, L = 29 mH, Rg = 25 , IAS = 4.1 A (see fig. 12).

DD

c. I

 4.1 A, dI/dt  100 A/μs, VDD  600, TJ  150 °C.

SD

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91118 www.vishay.com
S11-0516-Rev. B, 21-Mar-11 1

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

800

4.1

260 mJ

4.1 A

13 mJ

125 W

- 55 to + 150

d

10 lbf · in

1.1 N · m

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V

AT

°C

IRFBE30, SiHFBE30

D

S

G

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

-62

0.50 -

-1.0

°C/WCase-to-Sink, Flat, Greased Surface R

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient  VDS/TJ Reference to 25 °C, ID = 1 mA - 0.9 -

V

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

DS

GS(th)

V

GSS

DSS

V

DS(on)

fs

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

iss

- 310 -

oss

- 190 -

rss

g

--9.6

gs

--45

gd

d(on)

r

-82-

d(off)

-30-

f

D

Between lead,
6 mm (0.25") from
package and center of

S

die contact

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

S

I

SM

SD

rr

rr

on

MOSFET symbol
showing the
integral reverse
p - n junction diode

TJ = 25 °C, IF = 4.1 A, dI/dt = 100 A/μs

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle 2 %.

VGS = 0 V, ID = 250 μA 800 - -

VDS = VGS, ID = 250 μA 2.0 -

= ± 20 V - -

GS

VDS = 800 V, VGS = 0 V - -

= 640 V, VGS = 0 V, TJ = 125 °C - -

V

DS

= 10 V ID = 2.5 A

GS

VDS = 100 V, ID = 2.5 A

VGS = 0 V,

= 25 V,

V

DS

b

b

--

2.5 - -

- 1300 -

4.0 V

± 100 nA

100

500

3.0 

f = 1.0 MHz, see fig. 5

--78

= 4.1 A, VDS = 400 V,

I

V

GS

= 10 V

D

see fig. 6 and 13

b

-12-

= 400 V, ID = 4.1 A

V

DD

R

= 12 , RD = 95, see fig. 10

g

b

-33-

-4.5-

-7.5-

G

TJ = 25 °C, IS = 4.1 A, VGS = 0 V

D

S

b

--4.1

--16

--

-

b

480 720 ns

-

1.8 2.7 μC

1.8 V

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

V

V/°C

μA

S

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

www.vishay.com Document Number: 91118
2 S11-0516-Rev. B, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

IRFBE30, SiHFBE30

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Vishay Siliconix

Fig. 3 - Typical Transfer Characteristics

T

Fig. 2 - Typical Output Characteristics,

Document Number: 91118 www.vishay.com
S11-0516-Rev. B, 21-Mar-11 3

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

= 150 °C

C

This datasheet is subject to change without notice.

Fig. 4 - Normalized On-Resistance vs. Temperature

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