IRFBE30, SiHFBE30
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) |
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800 |
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RDS(on) ( ) |
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VGS = 10 V |
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3.0 |
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Qg (Max.) (nC) |
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78 |
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Qgs (nC) |
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9.6 |
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Qgd (nC) |
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45 |
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Configuration |
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Single |
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TO-220AB |
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N-Channel MOSFET
FEATURES |
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• Dynamic dV/dt Rating |
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• Repetitive Avalanche Rated |
Available |
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• Fast Switching |
RoHS* |
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COMPLIANT |
•Ease of Paralleling
•Simple Drive Requirements
•Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
ORDERING INFORMATION |
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Package |
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TO-220AB |
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Lead (Pb)-free |
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IRFBE30PbF |
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SiHFBE30-E3 |
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SnPb |
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IRFBE30 |
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SiHFBE30 |
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ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) |
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PARAMETER |
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SYMBOL |
LIMIT |
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UNIT |
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Drain-Source Voltage |
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VDS |
800 |
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V |
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Gate-Source Voltage |
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VGS |
± 20 |
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Continuous Drain Current |
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VGS at 10 V |
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TC = 25 °C |
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ID |
4.1 |
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TC = 100 °C |
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2.6 |
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A |
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Pulsed Drain Currenta |
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IDM |
16 |
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Linear Derating Factor |
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1.0 |
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W/°C |
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Single Pulse Avalanche Energyb |
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EAS |
260 |
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mJ |
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Repetitive Avalanche Currenta |
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IAR |
4.1 |
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A |
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Repetitive Avalanche Energya |
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EAR |
13 |
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mJ |
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Maximum Power Dissipation |
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TC = 25 °C |
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PD |
125 |
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W |
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Peak Diode Recovery dV/dtc |
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dV/dt |
2.0 |
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V/ns |
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Operating Junction and Storage Temperature Range |
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TJ, Tstg |
- 55 to + 150 |
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°C |
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Soldering Recommendations (Peak Temperature) |
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for 10 s |
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300d |
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Mounting Torque |
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6-32 or M3 screw |
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10 |
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lbf · in |
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1.1 |
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N · m |
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Notes |
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a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). |
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b. VDD = 50 V, starting TJ = 25 °C, L = 29 mH, Rg = 25 , IAS = 4.1 A (see fig. 12). |
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c. ISD 4.1 A, dI/dt 100 A/μs, VDD 600, TJ 150 °C. |
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d. 1.6 mm from case. |
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* Pb containing terminations are not RoHS compliant, exemptions may apply |
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Document Number: 91118 |
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www.vishay.com |
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S11-0516-Rev. B, 21-Mar-11 |
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1 |
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBE30, SiHFBE30
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER |
SYMBOL |
TYP. |
MAX. |
UNIT |
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Maximum Junction-to-Ambient |
RthJA |
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62 |
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Case-to-Sink, Flat, Greased Surface |
RthCS |
0.50 |
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°C/W |
Maximum Junction-to-Case (Drain) |
RthJC |
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1.0 |
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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER |
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SYMBOL |
TEST CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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Static |
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Drain-Source Breakdown Voltage |
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VDS |
VGS = 0 V, ID = 250 μA |
800 |
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V |
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VDS Temperature Coefficient |
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VDS/TJ |
Reference to 25 °C, ID = 1 mA |
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0.9 |
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V/°C |
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Gate-Source Threshold Voltage |
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VGS(th) |
VDS = VGS, ID = 250 μA |
2.0 |
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4.0 |
V |
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Gate-Source Leakage |
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IGSS |
VGS = ± 20 V |
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± 100 |
nA |
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Zero Gate Voltage Drain Current |
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IDSS |
VDS = 800 V, VGS = 0 V |
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100 |
μA |
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VDS = 640 V, VGS = 0 V, TJ = 125 °C |
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500 |
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Drain-Source On-State Resistance |
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RDS(on) |
VGS = 10 V |
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ID = 2.5 Ab |
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3.0 |
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Forward Transconductance |
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gfs |
VDS = 100 V, ID = 2.5 Ab |
2.5 |
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Dynamic |
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Input Capacitance |
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Ciss |
VGS = 0 V, |
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1300 |
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Output Capacitance |
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Coss |
VDS = 25 V, |
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310 |
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pF |
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Reverse Transfer Capacitance |
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Crss |
f = 1.0 MHz, see fig. 5 |
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190 |
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Total Gate Charge |
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Qg |
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ID = 4.1 A, VDS = 400 V, |
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78 |
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Gate-Source Charge |
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Qgs |
VGS = 10 V |
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9.6 |
nC |
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see fig. 6 and 13b |
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Gate-Drain Charge |
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Qgd |
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45 |
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Turn-On Delay Time |
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td(on) |
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12 |
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Rise Time |
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tr |
VDD = 400 V, ID = 4.1 A |
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33 |
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Turn-Off Delay Time |
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td(off) |
Rg = 12 , RD = 95 , see fig. 10b |
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82 |
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Fall Time |
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tf |
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30 |
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Internal Drain Inductance |
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LD |
Between lead, |
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4.5 |
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6 mm (0.25") from |
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Internal Source Inductance |
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LS |
package and center of |
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7.5 |
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nH |
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die contact |
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Drain-Source Body Diode Characteristics |
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Continuous Source-Drain Diode Current |
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IS |
MOSFET symbol |
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D |
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4.1 |
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showing the |
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A |
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integral reverse |
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Pulsed Diode Forward Currenta |
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I |
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- |
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16 |
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SM |
p - n junction diode |
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Body Diode Voltage |
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VSD |
TJ = 25 °C, IS = 4.1 A, VGS = 0 Vb |
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1.8 |
V |
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Body Diode Reverse Recovery Time |
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trr |
TJ = 25 °C, IF = 4.1 A, dI/dt = 100 A/μsb |
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480 |
720 |
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Body Diode Reverse Recovery Charge |
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Qrr |
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1.8 |
2.7 |
μC |
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Forward Turn-On Time |
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ton |
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) |
Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.Pulse width 300 μs; duty cycle 2 %.
www.vishay.com |
Document Number: 91118 |
2 |
S11-0516-Rev. B, 21-Mar-11 |
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBE30, SiHFBE30
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
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Fig. 1 - Typical Output Characteristics, TC = 25 °C |
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Fig. 3 - Typical Transfer Characteristics |
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Fig. 2 - Typical Output Characteristics, TC = 150 °C |
Fig. 4 - Normalized On-Resistance vs. Temperature |
Document Number: 91118 |
www.vishay.com |
S11-0516-Rev. B, 21-Mar-11 |
3 |
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000