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IRFBC40LC, SiHFBC40LC
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) 600
R
()V
DS(on)
Q
max. (nC) 39
g
Q
(nC) 10
gs
Q
(nC) 19
gd
Configuration Single
= 10 V 1.2
GS
FEATURES
• Ultra low gate charge
• Reduced gate drive requirement
• Enhanced 30 V, V
• Reduced C
• Extremely high frequency operation
• Repetitive avalanche rated
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
*
Thi s datasheet pro vi des information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
TO-220AB
Please see the information / tables in this datasheet for details.
DESCRIPTION
This new series of low charge power MOSFETs achieve
significantly lower gate charge over conventional Power
MOSFETs. Utilizing the new LCDMOS technology, the
device improvements are achieved without added product
S
D
G
cost, allowing for reduced gate drive requirements and total
system savings. In addition reduced switching losses and
improved efficiency are achievable in a variety of high
frequency applications. Frequencies of a few MHz at high
current are possible using the new low charge power
MOSFETs.
These device improvements combined with the proven
ruggedness and reliability that are characteristic of power
MOSFETs offer the designer a new standard in power
transistors for switching applications.
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free
SnPb
IRFBC40LCPbF
SiHFBC40LC-E3
IRFBC40LC
SiHFBC40LC
iss
, C
oss
GS
rating
, C
rss
Available
Available
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
= 100 °C 3.9
C
DS
± 30
GS
I
D
IDM 25
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak temperature)
b
a
a
= 25 °C P
c
d
C
for 10 s 300
E
AS
I
AR
E
AR
D
dV/dt 3.0 V/ns
, T
J
stg
Mounting Torque 6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 50 V, starting TJ = 25 °C, L = 25 mH, Rg = 25 , IAS = 6.2 A (see fig. 12).
DD
c. ISD 6.2 A, dI/dt 80 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
S16-0763-Rev. D, 02-May-16
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
600
6.2
530 mJ
6.2 A
13 mJ
125 W
-55 to +150
10 lbf · in
1.1 N · m
Document Number: 91114
V
AT
°C
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IRFBC40LC, SiHFBC40LC
www.vishay.com
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain) R
thJA
thCS
thJC
-62
0.50 -
-1.0
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.70 - V/°C
V
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
DS
GS(th)
V
GSS
DSS
V
DS(on)
fs
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
iss
-140-
oss
-15-
rss
g
--10
gs
--19
gd
d(on)
r
-27-
d(off)
-17-
f
D
Between lead,
6 mm (0.25") from
package and center of
Internal Source Inductance L
S
die contact
VGS = 0 V, ID = 250 μA 600 - - V
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
= 20 - - ± 100 nA
GS
VDS = 600 V, VGS = 0 V - - 100
= 480 V, VGS = 0 V, TJ = 125 °C - - 500
V
DS
= 10 V ID = 3.7 A
GS
VDS = 100 V, ID = 3.7 A
b
b
VGS = 0 V
V
= 25 V
DS
f = 1.0 MHz, see fig. 5
= 6.2 A, VDS = 360 V,
I
V
= 10 V
GS
V
DD
R
= 9.1 , RD = 47, see fig. 10
g
D
see fig. 6 and 13
= 300 V, ID = 6.2 A
b
b
Vishay Siliconix
°C/WCase-to-Sink, Flat, Greased Surface R
μA
--1.2
3.7 - - S
- 1100 -
pFOutput Capacitance C
--39
nC Gate-Source Charge Q
-12-
-20-
-4.5-
-7.5-
ns
nH
Gate Input Resistance R
g
f = 1 MHz, open drain 0.6 - 3.9
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
MOSFET symbol
showing the
integral reverse
I
SM
SD
rr
rr
on
p - n junction diode
TJ = 25 °C, IS = 6.2 A, VGS = 0 V
TJ = 25 °C, IF = 6.2 A, dI/dt = 100 A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
D
G
S
b
--6.2
--25
--1.5V
- 440 680 ns
b
A
-2.13.2μC
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: hvm@vishay.com
S16-0763-Rev. D, 02-May-16
2
Document Number: 91114
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91114_01
Bottom
To p
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
20 µs Pulse Width
T
C
= 25 °C
4.5 V
VDS, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
10
0
10
1
10
1
10
0
10
-1
10
-2
10
-2
10
-1
10
2
20 µs Pulse Width
V
DS
= 100 V
10
1
10
0
10
-1
I
D
, Drain Current (A)
V
GS
,
Gate-to-Source Voltage (V)
5678910
4
25 °C
150 °C
91114_03
I
D
= 6.2 A
V
GS
= 10 V
3.0
0.0
0.5
1.0
1.5
2.0
2.5
T
J
,
Junction Temperature (°C)
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
91114_04
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
3.5
2400
2000
1600
1200
0
400
800
10
0
10
1
Capacitance (pF)
V
DS
,
Drain-to-Source Voltage (V)
C
iss
C
rss
C
oss
V
GS
= 0 V, f = 1 MHz
C
iss
= Cgs + Cgd, Cds Shorted
C
rss
= C
gd
C
oss
= Cds + C
gd
91114_05
QG, Total Gate Charge (nC)
V
GS
, Gate-to-Source Voltage (V)
20
16
12
8
0
4
0
8
40
3224
16
V
DS
= 180 V
V
DS
= 240 V
For test circuit
see figure 13
V
DS
= 300 V
91114_06
ID = 5.2 A
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRFBC40LC, SiHFBC40LC
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
V
1
10
To p
0
10
Bottom
-1
, Drain Current (A)
10
D
I
-2
10
-2
10
91114_02
Fig. 2 - Typical Output Characteristics, T
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
-1
10
V
Drain-to-Source Voltage (V)
,
DS
0
10
20 µs Pulse Width
= 150 °C
T
C
1
10
= 150 °C
C
4.5 V
Fig. 4 - Normalized On-Resistance vs. Temperature
2
10
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
S16-0763-Rev. D, 02-May-16
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Fig. 3 - Typical Transfer Characteristics
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: hvm@vishay.com
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
3
Document Number: 91114