Vishay IRFBC40LC, SiHFBC40LC Data Sheet

www.vishay.com

N-Channel MOSFET

G

D

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IRFBC40LC, SiHFBC40LC

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) 600

R

()V

DS(on)

Q

max. (nC) 39

g

Q

(nC) 10

gs

Q

(nC) 19

gd

Configuration Single

= 10 V 1.2

GS

FEATURES

• Ultra low gate charge

• Reduced gate drive requirement

• Enhanced 30 V, V

• Reduced C

• Extremely high frequency operation

• Repetitive avalanche rated

• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

Note

*

Thi s datasheet pro vi des information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.

TO-220AB

Please see the information / tables in this datasheet for details.

DESCRIPTION

This new series of low charge power MOSFETs achieve
significantly lower gate charge over conventional Power
MOSFETs. Utilizing the new LCDMOS technology, the
device improvements are achieved without added product

S

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cost, allowing for reduced gate drive requirements and total
system savings. In addition reduced switching losses and
improved efficiency are achievable in a variety of high
frequency applications. Frequencies of a few MHz at high
current are possible using the new low charge power
MOSFETs.
These device improvements combined with the proven
ruggedness and reliability that are characteristic of power
MOSFETs offer the designer a new standard in power
transistors for switching applications.

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free

SnPb

IRFBC40LCPbF

SiHFBC40LC-E3

IRFBC40LC

SiHFBC40LC

iss

, C

oss

GS

rating

, C

rss

Available

Available





ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

C

= 100 °C 3.9

C

DS

± 30

GS

I

D

IDM 25

Linear Derating Factor 1.0 W/°C

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range T

Soldering Recommendations (Peak temperature)

b

a

a

= 25 °C P

c

d

C

for 10 s 300

E

AS

I

AR

E

AR

D

dV/dt 3.0 V/ns

, T

J

stg

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= 50 V, starting TJ = 25 °C, L = 25 mH, Rg = 25 , IAS = 6.2 A (see fig. 12).

DD

c. ISD  6.2 A, dI/dt  80 A/μs, VDD  VDS, TJ  150 °C.
d. 1.6 mm from case.

S16-0763-Rev. D, 02-May-16

1

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

600

6.2

530 mJ

6.2 A

13 mJ

125 W

-55 to +150

10 lbf · in

1.1 N · m

Document Number: 91114

V

AT

°C

IRFBC40LC, SiHFBC40LC

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www.vishay.com

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

-62

0.50 -

-1.0

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.70 - V/°C

V

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

DS

GS(th)

V

GSS

DSS

V

DS(on)

fs

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

iss

-140-

oss

-15-

rss

g

--10

gs

--19

gd

d(on)

r

-27-

d(off)

-17-

f

D

Between lead,
6 mm (0.25") from
package and center of

Internal Source Inductance L

S

die contact

VGS = 0 V, ID = 250 μA 600 - - V

VDS = VGS, ID = 250 μA 2.0 - 4.0 V

= 20 - - ± 100 nA

GS

VDS = 600 V, VGS = 0 V - - 100

= 480 V, VGS = 0 V, TJ = 125 °C - - 500

V

DS

= 10 V ID = 3.7 A

GS

VDS = 100 V, ID = 3.7 A

b

b

VGS = 0 V

V

= 25 V

DS

f = 1.0 MHz, see fig. 5

= 6.2 A, VDS = 360 V,

I

V

= 10 V

GS

V

DD

R

= 9.1 , RD = 47, see fig. 10

g

D

see fig. 6 and 13

= 300 V, ID = 6.2 A

b

b

Vishay Siliconix

°C/WCase-to-Sink, Flat, Greased Surface R

μA

--1.2

3.7 - - S

- 1100 -

pFOutput Capacitance C

--39

nC Gate-Source Charge Q

-12-

-20-

-4.5-

-7.5-

ns

nH

Gate Input Resistance R

g

f = 1 MHz, open drain 0.6 - 3.9 

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

S

MOSFET symbol
showing the 
integral reverse

I

SM

SD

rr

rr

on

p - n junction diode

TJ = 25 °C, IS = 6.2 A, VGS = 0 V

TJ = 25 °C, IF = 6.2 A, dI/dt = 100 A/μs

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

D

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S

b

--6.2

--25

--1.5V

- 440 680 ns

b

A

-2.13.2μC

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

S16-0763-Rev. D, 02-May-16

2

Document Number: 91114

www.vishay.com

91114_01

Bottom

To p

V

GS

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width
T

C

= 25 °C

4.5 V

VDS, Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

10

0

10

1

10

1

10

0

10

-1

10

-2

10

-2

10

-1

10

2

20 µs Pulse Width
V

DS

= 100 V

10

1

10

0

10

-1

I

D

, Drain Current (A)

V

GS

,

Gate-to-Source Voltage (V)

5678910

4

25 °C

150 °C

91114_03

I

D

= 6.2 A

V

GS

= 10 V

3.0

0.0

0.5

1.0

1.5

2.0

2.5

T

J

,

Junction Temperature (°C)

R

DS(on)

, Drain-to-Source On Resistance

(Normalized)

91114_04

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

3.5

2400

2000

1600

1200

0

400

800

10

0

10

1

Capacitance (pF)

V

DS

,

Drain-to-Source Voltage (V)

C

iss

C

rss

C

oss

V

GS

= 0 V, f = 1 MHz

C

iss

= Cgs + Cgd, Cds Shorted

C

rss

= C

gd

C

oss

= Cds + C

gd

91114_05

QG, Total Gate Charge (nC)

V

GS

, Gate-to-Source Voltage (V)

20

16

12

8

0

4

0

8

40

3224

16

V

DS

= 180 V

V

DS

= 240 V

For test circuit
see figure 13

V

DS

= 300 V

91114_06

ID = 5.2 A

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

IRFBC40LC, SiHFBC40LC

Vishay Siliconix

Fig. 1 - Typical Output Characteristics, TC = 25 °C

V

1

10

To p

0

10

Bottom

-1

, Drain Current (A)

10

D

I

-2

10

-2

10

91114_02

Fig. 2 - Typical Output Characteristics, T

GS

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

-1

10

V

Drain-to-Source Voltage (V)

,

DS

0

10

20 µs Pulse Width

= 150 °C

T

C

1

10

= 150 °C

C

4.5 V

Fig. 4 - Normalized On-Resistance vs. Temperature

2

10

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

S16-0763-Rev. D, 02-May-16

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 3 - Typical Transfer Characteristics

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

3

Document Number: 91114