IRFBC40AS, SiHFBC40AS
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) |
600 |
|
RDS(on) ( ) |
VGS = 10 V |
1.2 |
Qg (Max.) (nC) |
42 |
|
Qgs (nC) |
10 |
|
Qgd (nC) |
20 |
|
Configuration |
Single |
|
|
|
|
D
D2PAK (TO-263)
G
G D S
S
N-Channel MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• Low Gate Charge Qg results in Simple Drive Requirement
• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
•Fully Characterized Capacitance and Avalanche Voltage and Current
•Effective Coss Specified
•Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
•Switch Mode Power Supply (SMPS)
•Uninterruptible Power Supply
•High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Single Transistor Forward
ORDERING INFORMATION |
|
|
|
|
|
|
|
|
|
|
|
Package |
D2PAK (TO-263) |
|
|
D2PAK (TO-263) |
|
D2PAK (TO-263) |
|
||||
Lead (Pb)-free and Halogen-free |
SiHFBC40AS-GE3 |
|
|
SiHFBC40ASTRL-GE3a |
|
SiHFBC40ASTRR-GE3a |
|||||
Lead (Pb)-free |
IRFBC40ASPbF |
|
|
IRFBC40ASTRLPbFa |
|
IRFBC40ASTRRPbFa |
|||||
SiHFBC40AS-E3 |
|
|
SiHFBC40ASTL-E3a |
|
SiHFBC40ASTR-E3a |
||||||
|
|
|
|
||||||||
Note |
|
|
|
|
|
|
|
|
|
|
|
a. See device orientation. |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) |
|
|
|
|
|||||||
PARAMETER |
|
|
|
|
|
SYMBOL |
|
|
LIMIT |
|
UNIT |
|
|
|
|
|
|
|
|
|
|
|
|
Drain-Source Voltage |
|
|
|
|
|
VDS |
|
600 |
|
V |
|
Gate-Source Voltage |
|
|
|
|
|
VGS |
|
± 30 |
|
||
|
|
|
|
|
|
|
|
||||
Continuous Drain Currente |
|
VGS at 10 V |
TC = 25 °C |
ID |
|
6.2 |
|
|
|||
|
TC = 100 °C |
|
3.9 |
|
A |
||||||
|
|
|
|
|
|
|
|||||
Pulsed Drain Currenta, e |
|
|
|
|
|
IDM |
|
25 |
|
|
|
Linear Derating Factor |
|
|
|
|
|
|
|
1.0 |
|
W/°C |
|
|
|
|
|
|
|
|
|
|
|
|
|
Single Pulse Avalanche Energyb |
|
|
|
|
|
EAS |
|
570 |
|
mJ |
|
Repetitive Avalanche Currenta |
|
|
|
|
|
IAR |
|
6.2 |
|
A |
|
Repetitive Avalanche Energya |
|
|
|
|
|
EAR |
|
13 |
|
mJ |
|
Maximum Power Dissipation |
|
|
TC = 25 °C |
|
PD |
|
125 |
|
W |
||
Peak Diode Recovery dV/dtc, e |
|
|
|
|
|
dV/dt |
|
6.0 |
|
V/ns |
|
Operating Junction and Storage Temperature Range |
|
|
|
TJ, Tstg |
|
- 55 to + 150 |
|
°C |
|||
Soldering Recommendations (Peak Temperature) |
|
for 10 s |
|
|
|
|
300d |
|
|||
|
|
|
|
|
|
|
Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.Starting TJ = 25 °C, L = 29.6 mH, Rg = 25 , IAS = 6.2 A (see fig. 12).
c.ISD 6.2 A, dI/dt 88 A/μs, VDD VDS, TJ 150 °C.
d.1.6 mm from case.
e.Uses IRFBC40A, SiHFBC40A data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91113 |
www.vishay.com |
S11-1053-Rev. C, 30-May-11 |
1 |
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBC40AS, SiHFBC40AS
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER |
SYMBOL |
TYP. |
MAX. |
UNIT |
|
|
|
|
|
|
|
Maximum Junction-to-Ambient |
RthJA |
- |
40 |
°C/W |
|
Maximum Junction-to-Case (Drain) |
RthJC |
- |
1.0 |
||
|
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER |
|
SYMBOL |
TEST CONDITIONS |
|
MIN. |
TYP. |
MAX. |
UNIT |
|||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Static |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Drain-Source Breakdown Voltage |
|
VDS |
VGS = 0 V, ID = 250 μA |
|
600 |
- |
- |
V |
|||||||
VDS Temperature Coefficient |
|
VDS/TJ |
Reference to 25 °C, ID = 1 mAd |
|
- |
0.66 |
- |
V/°C |
|||||||
Gate-Source Threshold Voltage |
|
VGS(th) |
VDS = VGS, ID = 250 μA |
|
2.0 |
- |
4.0 |
V |
|||||||
Gate-Source Leakage |
|
IGSS |
VGS = ± 30 V |
|
- |
- |
± 100 |
nA |
|||||||
Zero Gate Voltage Drain Current |
|
IDSS |
VDS = 600 V, VGS = 0 V |
|
- |
- |
25 |
μA |
|||||||
|
VDS = 480 V, VGS = 0 V, TJ = 125 °C |
- |
- |
250 |
|||||||||||
|
|
|
|
||||||||||||
Drain-Source On-State Resistance |
|
RDS(on) |
VGS = 10 V |
|
ID = 3.7 Ab |
|
- |
- |
1.2 |
|
|||||
Forward Transconductance |
|
gfs |
VDS = 50 V, ID = 3.7 A |
|
3.4 |
- |
- |
S |
|||||||
Dynamic |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Input Capacitance |
|
Ciss |
|
VGS = 0 V, |
|
- |
1036 |
- |
|
||||||
Output Capacitance |
|
Coss |
|
|
|
|
|
|
|||||||
|
|
VDS = 25 V, |
|
- |
136 |
- |
|
||||||||
|
|
|
f = 1.0 MHz, see fig. 5 |
|
|
|
|
|
|||||||
Reverse Transfer Capacitance |
|
Crss |
|
- |
7.0 |
- |
pF |
||||||||
|
|
|
|
|
|
|
|
|
|
||||||
Output Capacitance |
|
Coss |
|
|
VDS = 1.0 V, f = 1.0 MHz |
- |
1487 |
- |
|||||||
|
|
|
|
||||||||||||
|
VGS = 0 V |
|
VDS = 480 V, f = 1.0 MHz |
- |
36 |
- |
|
||||||||
|
|
|
|
|
|||||||||||
Output Capacitance Effective |
|
Coss eff. |
|
|
VDS = 0 V to 480 Vc |
- |
48 |
- |
|
||||||
Total Gate Charge |
|
Qg |
|
|
ID = 6.2 A, VDS = 480 V, |
- |
- |
42 |
|
||||||
Gate-Source Charge |
|
Qgs |
VGS = 10 V |
|
- |
- |
10 |
nC |
|||||||
|
|
see fig. 6 and 13b |
|||||||||||||
Gate-Drain Charge |
|
Qgd |
|
|
|
|
|
|
|
|
|
- |
- |
20 |
|
Turn-On Delay Time |
|
td(on) |
|
|
|
|
|
|
|
|
|
- |
13 |
- |
|
Rise Time |
|
tr |
VDD = 300 V, ID = 6.2 A, |
|
- |
23 |
- |
|
|||||||
|
|
|
Rg = 9.1 , RD = 47 |
|
|
|
|
ns |
|||||||
Turn-Off Delay Time |
|
td(off) |
|
- |
31 |
- |
|||||||||
|
|
see fig. 10b |
|
|
|||||||||||
Fall Time |
|
tf |
|
|
|
|
|
|
|
|
|
- |
18 |
- |
|
Drain-Source Body Diode Characteristics |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Continuous Source-Drain Diode Current |
|
IS |
MOSFET symbol |
D |
- |
- |
6.2 |
|
|||||||
|
|
|
showing the |
|
|
|
|
|
|
|
|
|
|
A |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
integral reverse |
G |
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|||||
Pulsed Diode Forward Currenta |
|
ISM |
p - n junction diode |
|
|
|
|
|
S |
- |
- |
25 |
|
||
|
|
|
|
|
|
|
|||||||||
|
|
|
|
|
|
|
|
|
|
|
|||||
Body Diode Voltage |
|
VSD |
TJ = 25 °C, IS = 6.2 A, VGS = 0 Vb |
|
- |
- |
1.5 |
V |
|||||||
Body Diode Reverse Recovery Time |
|
trr |
TJ = 25 °C, IF = 6.2 A, dI/dt = 100 A/μsb |
- |
431 |
647 |
ns |
||||||||
Body Diode Reverse Recovery Charge |
|
Qrr |
- |
1.8 |
2.8 |
μC |
|||||||||
|
|
|
|
|
|
|
|
|
|
||||||
Forward Turn-On Time |
|
ton |
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) |
Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.Pulse width 300 μs; duty cycle 2 %.
c.COSS eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising fom 0 to 80 % VDS.
d.Uses IRHFBC40A/SiHFBC40A data and test conditions.
www.vishay.com |
Document Number: 91113 |
2 |
S11-1053-Rev. C, 30-May-11 |
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBC40AS, SiHFBC40AS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
|
Fig. 1 - Typical Output Characteristics |
|
|
|
Fig. 3 - Typical Transfer Characteristics |
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Fig. 2 - Typical Output Characteristics |
Fig. 4 - Normalized On-Resistance vs. Temperature |
Document Number: 91113 |
www.vishay.com |
S11-1053-Rev. C, 30-May-11 |
3 |
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000