Vishay IRFBC40AS, SiHFBC40AS Data Sheet

IRFBC40AS, SiHFBC40AS

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)	600
RDS(on) ( )	VGS = 10 V	1.2
Qg (Max.) (nC)	42
Qgs (nC)	10
Qgd (nC)	20
Configuration	Single

D

D2PAK (TO-263)

G

G D S

S

N-Channel MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition

• Low Gate Charge Qg results in Simple Drive Requirement

• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

•Fully Characterized Capacitance and Avalanche Voltage and Current

•Effective Coss Specified

•Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•Switch Mode Power Supply (SMPS)

•Uninterruptible Power Supply

•High Speed Power Switching

TYPICAL SMPS TOPOLOGIES

• Single Transistor Forward

ORDERING INFORMATION
Package	D2PAK (TO-263)				D2PAK (TO-263)				D2PAK (TO-263)
Lead (Pb)-free and Halogen-free	SiHFBC40AS-GE3				SiHFBC40ASTRL-GE3a				SiHFBC40ASTRR-GE3a
Lead (Pb)-free	IRFBC40ASPbF				IRFBC40ASTRLPbFa				IRFBC40ASTRRPbFa
	SiHFBC40AS-E3				SiHFBC40ASTL-E3a				SiHFBC40ASTR-E3a
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER						SYMBOL			LIMIT		UNIT
Drain-Source Voltage						VDS		600			V
Gate-Source Voltage						VGS		± 30
Continuous Drain Currente		VGS at 10 V		TC = 25 °C		ID		6.2
				TC = 100 °C				3.9			A
Pulsed Drain Currenta, e						IDM		25
Linear Derating Factor								1.0			W/°C
Single Pulse Avalanche Energyb						EAS		570			mJ
Repetitive Avalanche Currenta						IAR		6.2			A
Repetitive Avalanche Energya						EAR		13			mJ
Maximum Power Dissipation			TC = 25 °C			PD		125			W
Peak Diode Recovery dV/dtc, e						dV/dt		6.0			V/ns
Operating Junction and Storage Temperature Range						TJ, Tstg		- 55 to + 150			°C
Soldering Recommendations (Peak Temperature)			for 10 s						300d

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Starting TJ = 25 °C, L = 29.6 mH, Rg = 25 , IAS = 6.2 A (see fig. 12).

c.ISD 6.2 A, dI/dt 88 A/μs, VDD VDS, TJ 150 °C.

d.1.6 mm from case.

e.Uses IRFBC40A, SiHFBC40A data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91113	www.vishay.com
S11-1053-Rev. C, 30-May-11	1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFBC40AS, SiHFBC40AS

Vishay Siliconix

THERMAL RESISTANCE RATINGS

	PARAMETER	SYMBOL	TYP.	MAX.	UNIT
	Maximum Junction-to-Ambient	RthJA	-	40	°C/W
	Maximum Junction-to-Case (Drain)	RthJC	-	1.0

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER		SYMBOL	TEST CONDITIONS									MIN.	TYP.	MAX.	UNIT
Static
Drain-Source Breakdown Voltage		VDS	VGS = 0 V, ID = 250 μA									600	-	-	V
VDS Temperature Coefficient		VDS/TJ	Reference to 25 °C, ID = 1 mAd									-	0.66	-	V/°C
Gate-Source Threshold Voltage		VGS(th)	VDS = VGS, ID = 250 μA									2.0	-	4.0	V
Gate-Source Leakage		IGSS	VGS = ± 30 V									-	-	± 100	nA
Zero Gate Voltage Drain Current		IDSS	VDS = 600 V, VGS = 0 V									-	-	25	μA
			VDS = 480 V, VGS = 0 V, TJ = 125 °C									-	-	250
Drain-Source On-State Resistance		RDS(on)	VGS = 10 V		ID = 3.7 Ab							-	-	1.2
Forward Transconductance		gfs	VDS = 50 V, ID = 3.7 A									3.4	-	-	S
Dynamic
Input Capacitance		Ciss		VGS = 0 V,								-	1036	-
Output Capacitance		Coss
				VDS = 25 V,								-	136	-
			f = 1.0 MHz, see fig. 5
Reverse Transfer Capacitance		Crss										-	7.0	-	pF
Output Capacitance		Coss			VDS = 1.0 V, f = 1.0 MHz							-	1487	-
			VGS = 0 V		VDS = 480 V, f = 1.0 MHz							-	36	-
Output Capacitance Effective		Coss eff.			VDS = 0 V to 480 Vc							-	48	-
Total Gate Charge		Qg			ID = 6.2 A, VDS = 480 V,							-	-	42
Gate-Source Charge		Qgs	VGS = 10 V									-	-	10	nC
					see fig. 6 and 13b
Gate-Drain Charge		Qgd										-	-	20
Turn-On Delay Time		td(on)										-	13	-
Rise Time		tr	VDD = 300 V, ID = 6.2 A,									-	23	-
			Rg = 9.1 , RD = 47												ns
Turn-Off Delay Time		td(off)										-	31	-
				see fig. 10b
Fall Time		tf										-	18	-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current		IS	MOSFET symbol								D	-	-	6.2
			showing the												A
			integral reverse		G
Pulsed Diode Forward Currenta		ISM	p - n junction diode								S	-	-	25
Body Diode Voltage		VSD	TJ = 25 °C, IS = 6.2 A, VGS = 0 Vb									-	-	1.5	V
Body Diode Reverse Recovery Time		trr	TJ = 25 °C, IF = 6.2 A, dI/dt = 100 A/μsb									-	431	647	ns
Body Diode Reverse Recovery Charge		Qrr										-	1.8	2.8	μC
Forward Turn-On Time		ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width 300 μs; duty cycle 2 %.

c.COSS eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising fom 0 to 80 % VDS.

d.Uses IRHFBC40A/SiHFBC40A data and test conditions.

www.vishay.com	Document Number: 91113
2	S11-1053-Rev. C, 30-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFBC40AS, SiHFBC40AS

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

	Fig. 1 - Typical Output Characteristics				Fig. 3 - Typical Transfer Characteristics

Fig. 2 - Typical Output Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91113	www.vishay.com
S11-1053-Rev. C, 30-May-11	3

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000