Vishay IRFBC40AS, SiHFBC40AS Data Sheet
N-Channel MOSFET
G
D
S
D2PAK (TO-263)
G
D
S
Power MOSFET
IRFBC40AS, SiHFBC40AS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 600
()V
R
DS(on)
Q
(Max.) (nC) 42
g
Q
(nC) 10
gs
Q
(nC) 20
gd
Configuration Single
= 10 V 1.2
GS
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Low Gate Charge Q
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Effective C
Specified
oss
results in Simple Drive
g
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Single Transistor Forward
ORDERING INFORMATION
Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263)
a
Lead (Pb)-free and Halogen-free SiHFBC40AS-GE3 SiHFBC40ASTRL-GE3
Lead (Pb)-free
IRFBC40ASPbF IRFBC40ASTRLPbF
SiHFBC40AS-E3 SiHFBC40ASTL-E3
Note
a. See device orientation.
SiHFBC40ASTRR-GE3a
a
IRFBC40ASTRRPbFa
a
SiHFBC40ASTR-E3
a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current
Pulsed Drain Current
a, e
e
VGS at 10 V
C
T
= 100 °C 3.9
C
DS
± 30
GS
I
D
IDM 25
Linear Derating Factor 1.0 W/°C
c, e
b
a
a
= 25 °C P
C
E
AS
I
AR
E
AR
D
dV/dt 6.0 V/ns
, T
J
stg
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak Temperature) for 10 s 300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
SD
d. 1.6 mm from case.
= 25 °C, L = 29.6 mH, Rg = 25 , IAS = 6.2 A (see fig. 12).
J
6.2 A, dI/dt 88 A/μs, VDD VDS, TJ 150 °C.
e. Uses IRFBC40A, SiHFBC40A data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91113
www.vishay.com
S11-1053-Rev. C, 30-May-11 1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
600
6.2
570 mJ
6.2 A
13 mJ
125 W
- 55 to + 150
d
www.vishay.com/doc?91000
V
A
°C
IRFBC40AS, SiHFBC40AS
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain) R
thJA
thJC
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Temperature Coefficient
V
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Output Capacitance C
Output Capacitance Effective C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. C
eff. is a fixed capacitance that gives the same charging time as C
OSS
d. Uses IRHFBC40A/SiHFBC40A data and test conditions.
DS
V
DS/TJ
GS(th)
V
GSS
DSS
VGS = 10 V ID = 3.7 A
DS(on)
fs
iss
- 136 -
oss
-7.0-
rss
oss
eff. VDS = 0 V to 480 V
oss
g
--
gs
--
gd
d(on)
r
-31-
d(off)
-18-
f
S
V
V
GS
V
GS
MOSFET symbol
showing the
integral reverse
I
SM
SD
rr
rr
on
p - n junction diode
TJ = 25 °C, IF = 6.2 A, dI/dt = 100 A/μs
-40
-1.0
°C/W
VGS = 0 V, ID = 250 μA 600 - - V
Reference to 25 °C, I
= 1 mA
D
d
-0.66-
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
= ± 30 V - - ± 100 nA
GS
VDS = 600 V, VGS = 0 V - - 25
= 480 V, VGS = 0 V, TJ = 125 °C - - 250
DS
b
--1.2
VDS = 50 V, ID = 3.7 A 3.4 - - S
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
= 1.0 V, f = 1.0 MHz - 1487 -
V
DS
= 0 V
= 10 V
V
= 480 V, f = 1.0 MHz - 36 -
DS
= 6.2 A, VDS = 480 V,
I
D
see fig. 6 and 13
c
b
- 1036 -
-48-
--
42
10
20
-13-
V
= 300 V, ID = 6.2 A,
DD
R
= 9.1 , RD = 47
g
see fig. 10
b
G
TJ = 25 °C, IS = 6.2 A, VGS = 0 V
D
S
b
-23-
--6.2
--25
--1.5V
- 431 647 ns
b
-1.82.8μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
while VDS is rising fom 0 to 80 % VDS.
oss
V/°C
μA
pF
nC Gate-Source Charge Q
ns
A
www.vishay.com Document Number: 91113
2 S11-1053-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRFBC40AS, SiHFBC40AS
Vishay Siliconix
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91113 www.vishay.com
S11-1053-Rev. C, 30-May-11 3
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This document is subject to change without notice.
www.vishay.com/doc?91000
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