IRFBC40, SiHFBC40
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) |
|
600 |
|
RDS(on) (Ω) |
VGS = 10 V |
|
1.2 |
Qg (Max.) (nC) |
|
60 |
|
Qgs (nC) |
|
8.3 |
|
Qgd (nC) |
|
30 |
|
Configuration |
|
Single |
|
|
|
|
|
D
TO-220AB
G
S
D
G S
N-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated |
Available |
• Fast Switching |
RoHS* |
|
COMPLIANT |
•Ease of Paralleling
•Simple Drive Requirements
•Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
ORDERING INFORMATION |
|
|
|
|
|
|
|
|
|
Package |
|
|
TO-220AB |
|
|
|
|
||
Lead (Pb)-free |
|
|
IRFBC40PbF |
|
|
|
|
||
|
|
|
|
|
|
|
|
||
|
|
SiHFBC40-E3 |
|
|
|
||||
|
|
|
|
|
|
|
|||
SnPb |
|
|
IRFBC40 |
|
|
|
|
||
|
|
SiHFBC40 |
|
|
|
|
|||
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) |
|
|
|
||||||
PARAMETER |
|
|
|
|
SYMBOL |
LIMIT |
|
UNIT |
|
|
|
|
|
|
|
|
|
|
|
Drain-Source Voltage |
|
|
|
|
VDS |
600 |
|
V |
|
Gate-Source Voltage |
|
|
|
|
VGS |
± 20 |
|
||
|
|
|
|
|
|
||||
Continuous Drain Current |
|
VGS at 10 V |
|
TC = 25 °C |
|
ID |
6.2 |
|
|
|
|
TC = 100 °C |
|
3.9 |
|
A |
|||
|
|
|
|
|
|
|
|||
Pulsed Drain Currenta |
|
|
|
|
IDM |
25 |
|
|
|
Linear Derating Factor |
|
|
|
|
|
1.0 |
|
W/°C |
|
|
|
|
|
|
|
|
|
|
|
Single Pulse Avalanche Energyb |
|
|
|
|
EAS |
570 |
|
mJ |
|
Repetitive Avalanche Currenta |
|
|
|
|
IAR |
6.2 |
|
A |
|
Repetitive Avalanche Energya |
|
|
|
|
EAR |
13 |
|
mJ |
|
Maximum Power Dissipation |
|
TC = 25 °C |
|
PD |
125 |
|
W |
||
Peak Diode Recovery dV/dtc |
|
|
|
|
dV/dt |
3.0 |
|
V/ns |
|
Operating Junction and Storage Temperature Range |
|
|
|
|
TJ, Tstg |
- 55 to + 150 |
|
°C |
|
Soldering Recommendations (Peak Temperature) |
|
for 10 s |
|
|
300d |
|
|||
|
|
|
|
|
|||||
Mounting Torque |
|
6-32 or M3 screw |
|
|
10 |
|
lbf · in |
||
|
|
|
|
|
|
||||
|
|
|
1.1 |
|
N · m |
||||
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
Notes |
|
|
|
|
|
|
|
|
|
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). |
|
|
|
||||||
b. VDD = 50 V, starting TJ = 25 °C, L = 27 mH, Rg = 25 Ω, IAS = 6.2 A (see fig. 12). |
|
|
|
|
|||||
c. ISD ≤ 6.2 A, dI/dt ≤ 80 A/μs, VDD ≤ VDS, TJ ≤ 150 °C. |
|
|
|
|
|
|
|
|
|
d. 1.6 mm from case. |
|
|
|
|
|
|
|
|
|
* Pb containing terminations are not RoHS compliant, exemptions may apply |
|
|
|
|
|||||
|
|
|
|
|
|
|
|
|
|
Document Number: 91115 |
|
|
|
|
|
|
www.vishay.com |
||
S11-0515-Rev. B, 21-Mar-11 |
|
|
|
|
|
|
1 |
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBC40, SiHFBC40
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER |
SYMBOL |
TYP. |
MAX. |
UNIT |
|
|
|
|
|
Maximum Junction-to-Ambient |
RthJA |
- |
62 |
|
Case-to-Sink, Flat, Greased Surface |
RthCS |
0.50 |
- |
°C/W |
Maximum Junction-to-Case (Drain) |
RthJC |
- |
1.0 |
|
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER |
|
SYMBOL |
TEST CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
|||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Static |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Drain-Source Breakdown Voltage |
|
VDS |
VGS = 0 V, ID = 250 μA |
600 |
- |
- |
V |
|||||||||||
VDS Temperature Coefficient |
|
VDS/TJ |
Reference to 25 °C, ID = 1 mA |
- |
0.7 |
- |
V/°C |
|||||||||||
Gate-Source Threshold Voltage |
|
VGS(th) |
VDS = VGS, ID = 250 μA |
2.0 |
- |
4.0 |
V |
|||||||||||
Gate-Source Leakage |
|
IGSS |
VGS = ± 20 V |
|
|
|
|
|
|
|
- |
- |
± 100 |
nA |
||||
Zero Gate Voltage Drain Current |
|
IDSS |
VDS = 600 V, VGS = 0 V |
- |
- |
100 |
μA |
|||||||||||
|
VDS = 480 V, VGS = 0 V, TJ = 125 °C |
- |
- |
500 |
||||||||||||||
|
|
|
|
|
||||||||||||||
Drain-Source On-State Resistance |
|
RDS(on) |
VGS = 10 V |
|
|
ID = 3.7Ab |
- |
- |
1.2 |
Ω |
||||||||
Forward Transconductance |
|
g |
fs |
V = 100 V, I |
D |
= 3.7 Ab |
4.7 |
- |
- |
S |
||||||||
|
|
|
DS |
|
|
|
|
|
|
|
|
|
|
|
||||
Dynamic |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Input Capacitance |
|
Ciss |
VGS = 0 V, |
|
|
|
|
|
|
|
- |
1300 |
- |
|
||||
Output Capacitance |
|
Coss |
VDS = 25 V, |
|
|
|
|
|
|
|
- |
160 |
- |
pF |
||||
Reverse Transfer Capacitance |
|
Crss |
f = 1.0 MHz, see fig. 5 |
- |
30 |
- |
|
|||||||||||
Total Gate Charge |
|
Qg |
|
ID = 6.2 A, VDS = 360 V, |
- |
- |
60 |
|
||||||||||
Gate-Source Charge |
|
Qgs |
VGS = 10 V |
- |
- |
8.3 |
nC |
|||||||||||
|
see fig. 6 and 13b |
|||||||||||||||||
Gate-Drain Charge |
|
Qgd |
|
- |
- |
30 |
|
|||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||
Turn-On Delay Time |
|
td(on) |
|
|
|
|
|
|
|
|
|
|
|
- |
13 |
- |
|
|
Rise Time |
|
tr |
VDD = 300 V, ID = 6.2 A, |
- |
18 |
- |
ns |
|||||||||||
Turn-Off Delay Time |
|
td(off) |
Rg = 9.1 Ω, RD = 47 Ω, see fig. 10b |
- |
55 |
- |
||||||||||||
|
|
|||||||||||||||||
Fall Time |
|
tf |
- |
20 |
- |
|
||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||
Internal Drain Inductance |
|
LD |
Between lead, |
|
|
|
|
|
|
|
D |
- |
4.5 |
- |
|
|||
|
6 mm (0.25") from |
|
|
|
|
|
|
|
|
|
|
|||||||
Internal Source Inductance |
|
LS |
package and center of |
|
G |
|
|
|
|
- |
7.5 |
- |
nH |
|||||
|
|
|
|
|
|
|||||||||||||
|
die contact |
|
|
|
|
|
|
|
||||||||||
|
|
|
|
|
|
|
|
S |
|
|||||||||
|
|
|
|
|
|
|
|
|
||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Drain-Source Body Diode Characteristics |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Continuous Source-Drain Diode Current |
|
IS |
MOSFET symbol |
|
|
|
|
|
|
|
|
D |
- |
- |
6.2 |
|
||
|
|
|
|
showing the |
|
|
|
|
|
|
|
|
|
|
|
|
A |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
Pulsed Diode Forward Currenta |
|
ISM |
integral reverse |
|
|
G |
|
|
|
|
- |
- |
25 |
|||||
|
|
|
|
p - n junction diode |
|
|
|
|
|
|
|
|
S |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||
Body Diode Voltage |
|
VSD |
TJ = 25 °C, IS = 6.2 A, VGS = 0 Vb |
- |
- |
1.5 |
V |
|||||||||||
Body Diode Reverse Recovery Time |
|
trr |
TJ = 25 °C, IF = 6.2 A, dI/dt = 100 A/μsb |
- |
450 |
940 |
ns |
|||||||||||
Body Diode Reverse Recovery Charge |
|
Qrr |
- |
3.8 |
7.9 |
μC |
||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|||||||
Forward Turn-On Time |
|
ton |
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) |
Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
www.vishay.com |
Document Number: 91115 |
2 |
S11-0515-Rev. B, 21-Mar-11 |
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBC40, SiHFBC40
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, TC = 25 °C |
|
|
|
Fig. 3 - Typical Transfer Characteristics |
|
||
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Fig. 2 - Typical Output Characteristics, TC = 150 °C |
Fig. 4 - Normalized On-Resistance vs. Temperature |
Document Number: 91115 |
www.vishay.com |
S11-0515-Rev. B, 21-Mar-11 |
3 |
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000