Vishay IRFBC30, SiHFBC30 Data Sheet
TO-220AB
G
D
S
Power MOSFET
IRFBC30, SiHFBC30
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 600
R
(Ω)V
DS(on)
Q
(Max.) (nC) 31
g
Q
(nC) 4.6
gs
Q
(nC) 17
gd
Configuration Single
= 10 V 2.2
GS
D
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
•Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
G
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
S
N-Channel MOSFET
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free
SnPb
IRFBC30PbF
SiHFBC30-E3
IRFBC30
SiHFBC30
Available
RoHS*
COMPLIANT
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
= 100 °C 2.3
C
DS
± 20
GS
I
D
IDM 14
Linear Derating Factor 0.59 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
b
a
a
= 25 °C P
c
C
Operating Junction and Storage Temperature Range T
E
AS
I
AR
E
AR
D
dV/dt 3.0 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Mounting Torque 6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
= 50 V, starting TJ = 25 °C, L = 41 mH, Rg = 25 Ω, IAS = 3.6 A (see fig. 12).
b. V
DD
c. I
≤ 3.6 A, dI/dt ≤ 60 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
SD
d. 1.6 mm from case.
600
3.6
290 mJ
3.6 A
7.4 mJ
74 W
- 55 to + 150
d
10 lbf · in
1.1 N · m
V
AT
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91110 www.vishay.com
S11-0515-Rev. B, 21-Mar-11 1
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
IRFBC30, SiHFBC30
D
S
G
S
D
G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain) R
thJA
thCS
thJC
-62
0.50 -
-1.7
°C/WCase-to-Sink, Flat, Greased Surface R
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.62 -
V
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain Source On-State Resistance R
Forward Transconductance g
DS
GS(th)
V
GSS
DSS
V
DS(on)
fs
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
iss
-86-
oss
-19-
rss
g
--4.6
gs
--17
gd
d(on)
r
-35-
d(off)
-14-
f
D
Between lead,
6 mm (0.25") from
package and center of
S
die contact
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
I
SM
SD
rr
rr
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IF = 3.6 A, dI/dt = 100 A/μs
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
VGS = 0 V, ID = 250 μA 600 - -
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
= ± 20 V - - ± 100 nA
GS
VDS = 600 V, VGS = 0 V - - 100
V
= 480 V, VGS = 0 V, TJ = 125 °C - - 500
DS
= 10 V ID = 2.2 A
GS
VDS = 100 V, ID = 2.2 A
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
b
b
--2.2Ω
2.5 - -
- 660 -
--31
= 3.6 A, VDS = 360 V,
I
V
GS
= 10 V
D
see fig. 6 and 13
b
-11-
V
= 300 V, ID = 3.6 A ,
DD
R
= 12 Ω, RD = 82 Ω, see fig. 10
g
b
-13-
-4.5-
-7.5-
--3.6
--14
TJ = 25 °C, IS = 3.6 A, VGS = 0 V
b
--1.6V
- 370 810 ns
b
-2.04.2μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
V
V/°C
μA
S
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
A
www.vishay.com Document Number: 91110
2 S11-0515-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
IRFBC30, SiHFBC30
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Vishay Siliconix
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, T
Document Number: 91110 www.vishay.com
S11-0515-Rev. B, 21-Mar-11 3
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
= 150 °C
C
This datasheet is subject to change without notice.
Fig. 4 - Normalized On-Resistance vs. Temperature
www.vishay.com/doc?91000
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