Vishay IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L Data Sheet
N-Channel MOSFET
G
D
S
D2PAK (TO-263)
G
D
S
I2PAK (TO-262)
G
D
S
IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) 600
()V
R
DS(on)
Q
(Max.) (nC) 18
g
Q
(nC) 3.0
gs
Q
(nC) 8.9
gd
Configuration Single
= 10 V 4.4
GS
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount (IRFBC20S, SiHFBC20S)
•
Low-Profile Through-Hole (IRFBC20L, SiHFBC20L)
• Available in Tape and Reel (IRFBC20, SiiHFBC20S)
• Dynamic dV/dt Rating
• 150 °C Operating Temperature
•Fast Switching
• Fully Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
2
The D
PAK is a surface mount power package capable of
the accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
2
D
PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application. The
through-hole version (IRFBC20L, SiHFBC20L) is a available
for low-profile applications.
ORDERING INFORMATION
Package D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262)
Lead (Pb)-free and Halogen-free SiHFBC20S-GE3 SiHFBC20STRL-GE3
Lead (Pb)-free
IRFBC20SPbF IRFBC20STRLPbF
SiHFBC20S-E3 SiHFBC20STL-E3
Note
a. See device orientation.
a
a
a
SiHFBC20L-GE3
IRFBC20LPbF
SiHFBC20L-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current
Pulsed Drain Current
a, e
e
VGS at 10 V
C
= 100 °C 1.4
C
DS
± 20
GS
I
D
IDM 8.0
Linear Derating Factor 0.40 W/°C
c, e
b, e
a
T
= 25 °C
A
= 25 °C 50
T
C
Single Pulse Avalanche Energy
Avalanche Current
a
Repetiitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
E
AS
I
AR
E
AR
P
D
dV/dt 3.0 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 50 V, starting TJ = 25 °C, L = 31 mH, Rg = 25 , IAS = 2.2 A (see fig. 12).
DD
c. I
2.2 A, dI/dt 40 A/μs, VDD VDS, TJ 150 °C.
SD
d. 1.6 mm from case.
e. Uses IRFBC20, SiHFBC20 data and test conditions.
600
2.2
84 mJ
2.2 A
5.0 mJ
3.1
- 55 to + 150
d
V
AT
W
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91107
S11-1052-Rev. C, 30-May-11 1
www.vishay.com
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient (PCB
Mounted, steady-state)
a
Maximum Junction-to-Case (Drain) R
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Source Inductance L
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Uses IRFBC20, SiHFBC20 data and test conditions.
a
R
thJA
thJC
DS
GS(th)
V
GSS
-40
°C/W
-2.5
VGS = 0, ID = 250 μA 600 - - V
c
-0.88-V/°C
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
= ± 20 V - - ± 100 nA
GS
VDS = 600 V, VGS = 0 V - - 100
DSS
VGS = 10 V ID = 1.3 A
DS(on)
fs
iss
-48-
oss
-8.6-
rss
g
--3.0
gs
--8.9
gd
d(on)
r
-30-
d(off)
-25-
f
S
S
I
SM
SD
rr
rr
on
V
= 480 V, VGS = 0 V, TJ = 125 °C - - 500
DS
VDS = 50 V, ID = 1.3 A
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
b
c
c
--4.4
1.4 - - S
- 350 -
--18
= 2.0 A, VDS = 360 V,
I
V
= 10 V
GS
D
see fig. 6 and 13
b, c
-10-
V
= 300 V, ID = 2.0 A,
DD
R
= 18 , RD = 150 , see fig. 10
g
b, c
-23-
Between lead, and center of die contact - 7.5 - nH
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IS = 2.2 A, VGS = 0 V
TJ = 25 °C, IF = 2.0 A, dI/dt = 100 A/μs
D
G
S
b
b, c
--2.2
--8.0
--1.6V
- 290 580 ns
- 0.67 1.3 μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
μA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
A
www.vishay.com Document Number: 91107
2 S11-1052-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, T
= 150 °C
C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91107 www.vishay.com
S11-1052-Rev. C, 30-May-11 3
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This document is subject to change without notice.
www.vishay.com/doc?91000
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