Vishay IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L Data Sheet

IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)				600
RDS(on) ( )			VGS = 10 V	4.4
Qg (Max.) (nC)				18
Qgs (nC)				3.0
Qgd (nC)				8.9
Configuration				Single
				D
I2PAK (TO-262)		D2PAK (TO-263)
		G	G
	D S		D
G			S
				S
				N-Channel MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition

• Surface Mount (IRFBC20S, SiHFBC20S)

• Low-Profile Through-Hole (IRFBC20L, SiHFBC20L)

• Available in Tape and Reel (IRFBC20, SiiHFBC20S)

• Dynamic dV/dt Rating

•150 °C Operating Temperature

•Fast Switching

•Fully Avalanche Rated

•Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The D2PAK is a surface mount power package capable of the accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRFBC20L, SiHFBC20L) is a available for low-profile applications.

ORDERING INFORMATION

Package

D2PAK (TO-263)

D2PAK (TO-263)

I2PAK (TO-262)

Lead (Pb)-free and Halogen-free

SiHFBC20S-GE3

SiHFBC20STRL-GE3a

SiHFBC20L-GE3

Lead (Pb)-free

IRFBC20SPbF

IRFBC20STRLPbFa

IRFBC20LPbF

SiHFBC20S-E3

SiHFBC20STL-E3a

SiHFBC20L-E3

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

600

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Currente

VGS at 10 V

TC = 25 °C

ID

2.2

TC

= 100 °C

1.4

A

Pulsed Drain Currenta, e

IDM

8.0

Linear Derating Factor

0.40

W/°C

Single Pulse Avalanche Energyb, e

EAS

84

mJ

Avalanche Currenta

IAR

2.2

A

Repetiitive Avalanche Energya

EAR

5.0

mJ

Maximum Power Dissipation

TA = 25 °C

PD

3.1

W

TC = 25 °C

50

Peak Diode Recovery dV/dtc, e

dV/dt

3.0

V/ns

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

300d

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.VDD = 50 V, starting TJ = 25 °C, L = 31 mH, Rg = 25 , IAS = 2.2 A (see fig. 12).

c.ISD 2.2 A, dI/dt 40 A/μs, VDD VDS, TJ 150 °C.

d.1.6 mm from case.

e.Uses IRFBC20, SiHFBC20 data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91107	www.vishay.com
S11-1052-Rev. C, 30-May-11	1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER	SYMBOL	TYP.	MAX.	UNIT
Maximum Junction-to-Ambient (PCB	RthJA	-	40
Mounted, steady-state)a				°C/W
Maximum Junction-to-Case (Drain)	RthJC	-	2.5

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER		SYMBOL	TEST CONDITIONS								MIN.	TYP.	MAX.	UNIT
Static
Drain-Source Breakdown Voltage		VDS	VGS = 0, ID = 250 μA								600	-	-	V
VDS Temperature Coefficient		VDS/TJ	Reference to 25 °C, ID = 1 mAc								-	0.88	-	V/°C
Gate-Source Threshold Voltage		VGS(th)	VDS = VGS, ID = 250 μA								2.0	-	4.0	V
Gate-Source Leakage		IGSS		VGS = ± 20 V							-	-	± 100	nA
Zero Gate Voltage Drain Current		IDSS	VDS = 600 V, VGS = 0 V								-	-	100	μA
			VDS = 480 V, VGS = 0 V, TJ = 125 °C								-	-	500
Drain-Source On-State Resistance		RDS(on)	VGS = 10 V		ID = 1.3 Ab						-	-	4.4
Forward Transconductance		gfs	VDS = 50 V, ID = 1.3 Ac								1.4	-	-	S
Dynamic
Input Capacitance		Ciss			VGS = 0 V,						-	350	-
Output Capacitance		Coss			VDS = 25 V,						-	48	-	pF
			f = 1.0 MHz, see fig. 5c
Reverse Transfer Capacitance		Crss									-	8.6	-
Total Gate Charge		Qg			ID = 2.0 A, VDS = 360 V,						-	-	18
Gate-Source Charge		Qgs	VGS = 10 V								-	-	3.0	nC
					see fig. 6 and 13b, c
Gate-Drain Charge		Qgd									-	-	8.9
Turn-On Delay Time		td(on)									-	10	-
Rise Time		tr	VDD = 300 V, ID = 2.0 A,								-	23	-	ns
Turn-Off Delay Time		td(off)	Rg = 18 , RD = 150 , see fig. 10b, c								-	30	-
Fall Time		tf									-	25	-
Internal Source Inductance		LS	Between lead, and center of die contact								-	7.5	-	nH
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current		IS	MOSFET symbol								-	-	2.2
			showing the							D				A
			integral reverse
Pulsed Diode Forward Currenta		ISM			G						-	-	8.0
			p - n junction diode							S
Body Diode Voltage		VSD	TJ = 25 °C, IS = 2.2 A, VGS = 0 Vb								-	-	1.6	V
Body Diode Reverse Recovery Time		trr	TJ = 25 °C, IF = 2.0 A, dI/dt = 100 A/μsb, c								-	290	580	ns
Body Diode Reverse Recovery Charge		Qrr									-	0.67	1.3	μC
Forward Turn-On Time		ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width 300 μs; duty cycle 2 %.

c.Uses IRFBC20, SiHFBC20 data and test conditions.

www.vishay.com	Document Number: 91107
2	S11-1052-Rev. C, 30-May-11
	This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics, TC = 25 °C		Fig. 3 - Typical Transfer Characteristics

Fig. 2 - Typical Output Characteristics, TC = 150 °C

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91107	www.vishay.com
S11-1052-Rev. C, 30-May-11	3

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000