Vishay IRFB20N50K, SiHFB20N50K Data Sheet

IRFB20N50K, SiHFB20N50K

Power MOSFET

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 500

(Ω)V

R

DS(on)

Q

(Max.) (nC) 110

g

(nC) 33

Q

gs

Q

(nC) 54

gd

Configuration Single

TO-220

= 10 V 0.21

GS

D

FEATURES

• Low Gate Charge Qg Results in Simple Drive
Requirement

• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness

• Fully Characterized Capacitance and Avalanche Voltage
and Current

•Low R

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Switch Mode Power Supply (SMPS)

G

S

D

G

N-Channel MOSFET

S

• Uninterruptible Power Supply

• High Speed Power Switching

• Hard Switched and High Frequency Circuits

ORDERING INFORMATION

Package TO-220

Lead (Pb)-free

SnPb

IRFB20N50KPbF
SiHFB20N50K-E3
IRFB20N50K
SiHFB20N50K

Available

RoHS*

COMPLIANT

DS(on)

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

= 25 °C

T

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

C

= 100 °C 12

C

DS

± 30

GS

I

D

IDM 80

Linear Derating Factor 2.2 W/°C

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

b

a

a

= 25 °C P

C

c

Operating Junction and Storage Temperature Range T

E

AS

I

AR

E

AR

D

dV/dt 10 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw 10 N

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Starting T
c. I

SD

= 25 °C, L = 1.6 mH, Rg = 25 Ω, IAS = 20 A.

J

≤ 20 A, dI/dt ≤ 350 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91101 www.vishay.com
S09-2236-Rev. D, 05-Apr-10 1

500

20

330 mJ

20 A

28 mJ

280 W

- 55 to + 150

d

V

AT

°C

IRFB20N50K, SiHFB20N50K

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.61 - V/°C

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Output Capacitance C

Effective Output Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Pulse width ≤ 400 µs; duty cycle ≤ 2 %.

DS

GS(th)

V

GSS

DSS

VGS = 10 V ID = 12 A

DS(on)

fs

iss

- 320 -

oss

-34-

rss

oss

eff. VDS = 0 V to 400 V - 160 -

oss

g

--33

gs

--54

gd

d(on)

r

-45-

d(off)

-33-

f

S

I

SM

SD

rr

rr

on

V

V

GS

V

GS

Rg = 7.5 Ω, VGS = 10 V, see fig. 10

MOSFET symbol
showing the
integral reverse

p - n junction diode

TJ = 25 °C, IF = 20 A, dI/dt = 100 A/µs

-58

0.50 -

°C/WCase-to-Sink, Flat, Greased Surface R

-0.45

VGS = 0 V, ID = 250 µA 500 - - V

VDS = VGS, ID = 250 µA 3.0 - 5.0 V

= ± 30 V - - ± 100 nA

GS

VDS = 500 V, VGS = 0 V - - 50

= 400 V, VGS = 0 V, TJ = 125 °C - - 250

DS

b

- 0.21 0.25 Ω

VDS = 50 V, ID = 12 A 11 - - S

VGS = 0 V,

= 25 V,

V

DS

- 2870 -

f = 1.0 MHz, see fig. 5

V

= 1.0 V, f = 1.0 MHz - 3480 -

DS

= 0 V

= 400 V, f = 1.0 MHz - 85 -

V

DS

- - 110

= 20 A, VDS = 400 V

I

= 10 V

D

see fig. 6 and 13

b

-22-

V

= 250 V, ID = 20 A

DD

G

TJ = 25 °C, IS = 20 A, VGS = 0 V

b

D

S

b

-74-

--20

--80

--1.5V

- 520 780 ns

b

-5.38.0µC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

µA

pF

nC Gate-Source Charge Q

ns

A

www.vishay.com Document Number: 91101
2 S09-2236-Rev. D, 05-Apr-10

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

10

rent (A)

VGS
15 V

Top

12 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

Bottom 5.0 V

IRFB20N50K, SiHFB20N50K

Vishay Siliconix

100.0

TJ= 150 °C

10.0

1

0.1

Drain-to-Source Cur
,

D

I

5.0V

20 µs Pulse Width
TJ = 25 °C

0.01

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics

100

10

rent (A)

1

VGS
15 V

Top

12 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

Bottom 5.0 V

5.0V

0.1

Drain-to-Source Cur
,

D

I

20 µs Pulse Width
TJ = 25 °C

0.01

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics

1.0

Drain-to-Source Current (A)

0.1

,

D

I

TJ= 25 °C

VDS= 50 V

0.0

5.0 6.0 7.0 8.0 9.0 10.0

20 ms Pulse width

V ,GS Gate-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

3.5

3.0

2.5

2.0

1.5

1.0

, Drain-to-Source On-Resistance

DS(on)

(normalised)

r

0.5

0.0

20 A

I =

D

V

GS

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature (°C)

Fig. 4 - Normalized On-Resistance vs. Temperature

= 10 V

Document Number: 91101 www.vishay.com
S09-2236-Rev. D, 05-Apr-10 3