Vishay IRFB11N50A, SiHFB11N50A Data Sheet

IRFB11N50A, SiHFB11N50A

*

Power MOSFET

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 500

R

(Ω)V

DS(on)

Q

(Max.) (nC) 52

g

Q

(nC) 13

gs

Q

(nC) 18

gd

Configuration Single

TO-220

= 10 V 0.52

GS

D

FEATURES

• Low Gate Charge Qg Results in Simple Drive
Requirement

• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness

• Fully Characterized Capacitance and
Avalanche Voltage and current

• Lead (Pb)-free Available

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

G

• High Speed Power Switching

APPLICABLE OFF LINE SMPS TOPOLOGIES

S

D

G

N-Channel MOSFET

S

• Two Transistor Forward

• Half and Full Bridge

• Power Factor Correction Boost

ORDERING INFORMATION

Package TO-220

Lead (Pb)-free

SnPb

IRFB11N50APbF
SiHFB11N50A-E3
IRFB11N50A
SiHFB11N50A

Available

RoHS

COMPLIANT

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

C

= 100 °C 7.0

C

DS

± 30

GS

I

D

IDM 44

Linear Derating Factor 1.3 W/°C

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

b

a

a

= 25 °C P

c

C

Operating Junction and Storage Temperature Range T

E

AS

I

AR

E

AR

D

dV/dt 6.9 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I

SD

= 25 °C, L = 4.5 mH, RG = 25 Ω, IAS = 11 A (see fig. 12).

J

≤ 11 A, dI/dt ≤ 140 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91094 www.vishay.com
S-81243-Rev. B, 21-Jul-08 1

500

11

275 mJ

11 A

17 mJ

170 W

- 55 to + 150

d

10 lbf · in

1.1 N · m

V

AT

°C

IRFB11N50A, SiHFB11N50A

Vishay Siliconix

THERMAL RESISTANCE

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Output Capacitance C

Effective Output Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. C

effective is a fixed capacitance that gives the same charging time as C

oss

DS

GS(th)

V

GSS

DSS

VGS = 10 V ID = 6.6 A

DS(on)

fs

iss

- 208 -

oss

-8.1-

rss

oss

eff. VDS = 0 V to 400 V - 97 -

oss

g

--13

gs

--18

gd

d(on)

r

-32-

d(off)

-28-

f

S

I

SM

SD

rr

rr

on

V

V

GS

V

GS

MOSFET symbol
showing the
integral reverse

p - n junction diode

TJ = 25 °C, IF = 11 A, dI/dt = 100 A/µs

-62

0.50 -

°C/WCase-to-Sink, Flat, Greased Surface R

-0.75

VGS = 0 V, ID = 250 µA 500 - - V

VDS = VGS, ID = 250 µA 2.0 - 4.0 V

= ± 30 V - - ± 100 nA

GS

VDS = 500 V, VGS = 0 V - - 25

= 400 V, VGS = 0 V, TJ = 150 °C - - 250

DS

b

- - 0.52 Ω

VDS = 50 V, ID = 6.6 A 6.1 - - S

VGS = 0 V,

= 25 V,

V

DS

- 1423 -

f = 1.0 MHz, see fig. 5

V

= 1.0 V, f = 1.0 MHz - 2000 -

DS

= 0 V

= 400 V, f = 1.0 MHz - 55 -

V

DS

--52

= 11 A, VDS = 400 V

I

= 10 V

D

see fig. 6 and 13

b

-14-

V

= 250 V, ID = 11 A

DD

R

= 9.1 Ω, RD = 22 Ω, see fig. 10

G

G

TJ = 25 °C, IS = 11 A, VGS = 0 V

b

D

S

b

-35-

--11

--44

--1.5V

- 510 770 ns

b

-3.45.1µC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

while VDS is rising from 0 to 80 % VDS.

oss

µA

pF

nC Gate-Source Charge Q

ns

A

www.vishay.com Document Number: 91094
2 S-81243-Rev. B, 21-Jul-08

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

10

TOP

BOTTOM

VGS
15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

IRFB11N50A, SiHFB11N50A

Vishay Siliconix

100

10

°

T = 150 C

J

°

T = 25 C

J

1

D

I , Drain-to-Source Current (A)

4.5V

20µs PULSE WIDTH

°

T = 25 C

0.1

0.1 1 10 100

V , Drain-to-Source Voltage (V)

DS

J

Fig. 1 - Typical Output Characteristics

100

10

D

I , Drain-to-Source Current (A)

1

VGS

TOP

15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM

4.5V

4.5V

1 10 100

V , Drain-to-Source Volt age (V)

DS

20µs PULSE WIDTH
T = 150 C

°

J

Fig. 2 - Typical Output Characteristics

1

D

I , Drain-to-Source Current (A)

V = 50V

DS

0.1

4.0 5.0 6.0 7.0 8.0 9.0

V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDT H

Fig. 3 - Typical Transfer Characteristics

3.0

2.5

2.0

1.5

(Normalized)

1.0

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

11A

I =

D

V =

GS

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

°

Fig. 4 - Normalized On-Resistance vs. Temperature

10V

Document Number: 91094 www.vishay.com
S-81243-Rev. B, 21-Jul-08 3