Vishay IRF9620S, SiHF9620S Data Sheet

S

G

D

P-Channel MOSFET

Power MOSFET

IRF9620S, SiHF9620S

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) - 200

()V

R

DS(on)

Q

(Max.) (nC) 22

g

Q

(nC) 12

gs

Q

(nC) 10

gd

Configuration Single

= - 10 V 1.5

GS

FEATURES

• Halogen-free According to IEC 61249-2-21
Definition

• Surface Mount

• Available in Tape and Reel

• Dynamic dV/dt Rating

• P-Channel

•Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

D2PAK (TO-263)

D

G

S

The Power MOSFETs technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of the Power MOSFETs
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.

2

PAK (TO-263) is a surface mount power package

The D
capable of accommodating die sizes up to HEX-4. It
provides the highest power capability and the lowest
possible on-resistance in any existing surface mount
package. The D

2

PAK (TO-263) is suitable for high current
applications because of its low internal connection
resistance and can dissipate up to 2.0 W in a typical surface
mount application.

ORDERING INFORMATION

Package D2PAK (TO-263) D2PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHF9620S-GE3 SiHF9620STRL-GE3

Lead (Pb)-free

Note

a. See device orientation.

IRF9620SPbF IRF9620STRLPbF
SiHF9620S-E3 SiHF9620STL-E3

a

a

a

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate-Source Voltage V

= 25 °C

T

Continuous Drain Current V

Pulsed Drain Current
Linear Derating Factor 0.32
Linear Derating Factor (PCB Mount)
Inductive Current, Clamp I
Maximum Power Dissipation T
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak Temperature) for 10 s 300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).
b. Not Applicable
c. I

 - 3.5 A, dI/dt  95 A/μs, VDD  VDS, TJ  150 °C.

SD

d. 1.6 mm from case.
e. When mounted on 1” square PCB (FR-4 or G-10 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91083
S11-1051-Rev. C, 30-May-11 1

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

a

e

e

c

This document is subject to change without notice.

at - 10 V

GS

TA = 25 °C 3.0

C

= 100 °C - 2.0

C

= 25 °C

C

www.vishay.com

DS

± 20

GS

I

D

IDM - 14

LM

P

D

dV/dt - 5.0 V/ns

, T

J

stg

- 200

- 3.5

0.025

- 14 A
40

- 55 to + 150

d

www.vishay.com/doc?91000

V

AT

W/°C

W

°C

IRF9620S, SiHF9620S

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Ambient
(PCB Mount)

a

Maximum Junction-to-Case (Drain) R

thJA

R

thJA

thJC

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.22 - V/°C

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).
b. Pulse width  300 μs; duty cycle  2 %.

DS

GS(th)

V

GSS

DSS

VGS = - 10 V ID = - 1.5 A

DS(on)

fs

iss

- 100 -

oss

-30-

rss

g

--12

gs

--10

gd

d(on)

r

-20-

d(off)

-15-

f

D

S

S

I

SM

SD

rr

rr

on

TJ = 25 °C, IF = - 3.5 A, dI/dt = 100 A/μs

--62

--40

--3.1

VGS = 0, ID = - 250 μA - 200 - - V

VDS = VGS, ID = - 250 μA - 2.0 - - 4.0 V

= ± 20 V - - ± 100 nA

GS

VDS = - 200 V, VGS = 0 V - - - 100

V

= - 160 V, VGS = 0 V, TJ = 125 °C - - - 500

DS

b

--1.5

VDS = - 50 V, ID = - 1.5 A 1.0 - - S

VGS = 0 V,

V

= - 25 V,

DS

f = 1.0 MHz, see fig. 10

- 350 -

--22

= - 4.0 A, VDS = - 160 V,

I

V

GS

= - 10 V

D

see fig. 11 and 18

b

-15-

V

= - 100 V, ID = - 1.5 A,

DD

R

= 50 , RD = 67 , see fig. 17

G

Between lead,
6 mm (0.25") from
package and center of
die contact

MOSFET symbol
showing the
integral reverse
p - n junction diode

TJ = 25 °C, IS = - 3.5 A, VGS = 0 V

b

D

G

S

D

G

S

b

-25-

-4.5-

-7.5-

--- 3.5

--- 14

--- 7.0V

- 300 450 ns

b

-1.92.9nC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

°C/W

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

www.vishay.com Document Number: 91083
2 S11-1051-Rev. C, 30-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

91083_01

80 µs Pulse Test

VDS, Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

- 10

- 5

V

GS

= - 10, - 9, - 8, - 7 V

- 4 V

- 6 V

- 5 V

- 4

0

- 1

- 2

- 3

0

- 50- 40

- 30- 20

91083_02

VGS, Gate-to-Source Voltage (V)

I

D

, Drain Current (A)

- 2

- 5

- 4

0

- 1

- 2

- 3

0

- 10- 8

- 6- 4

80 µs Pulse Test
V

DS

> I

D(on)

x R

DS(on)

max.

T

J

= - 55 °C

T

J

= 25 °C

T

J

= 125 °C

100 µs

1 ms

10 ms

Operation in this area limited

by R

DS(on)

Negative VDS, Drain-to-Source Voltage (V)

Negative I

D

, Drain Current (A)

TC = 25 °C
T

J

= 150 °C

Single Pulse

10

2

2

5

0.1

1

2

5

10

2

5

25

110

25

10

2

10

3

25

91083_04

2.0

1.0

0.1

10

-5

10

-4

10

-3

10

-2

0.1 1.0 10

P

DM

t

1

t

2

t1, Square Wave Pulse Duration (s)

Z

thJC

(t)/R

thJC

, Normalized Effective Transient

Notes:

1. Duty Factor, D = t

1/t2

2. Per Unit Base = R

thJC

= 3.12 °C/W

3. T

JM

- TC = PDM Z

thJC

(t)

Single Pulse (Transient
Thermal Impedence)

0.2

0.05

0.02

0.01

91083_05

0.1

D = 0.5

0.5

0.2

0.05

0.02

0.01

25 25 25 25 25 25

Thermal Impedence (Per Unit)

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

- 5

80 µs Pulse Test

- 4

IRF9620S, SiHF9620S

Vishay Siliconix

V

= - 10, - 9, - 8, - 7 V

GS

Fig. 1 - Typical Output Characteristics

- 3

- 2

, Drain Current (A)

D

I

- 1

0

91083_03

- 6 V

- 5 V

- 4 V

- 1

0

- 3- 2

VDS, Drain-to-Source Voltage (V)

Fig. 3 - Typical Saturation Characteristics

- 5- 4

Fig. 2 - Typical Transfer Characteristics

Document Number: 91083 www.vishay.com
S11-1051-Rev. C, 30-May-11 3

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration

This document is subject to change without notice.

Fig. 4 - Maximum Safe Operating Area

www.vishay.com/doc?91000