Vishay IRF9610S, SiHF9610S Data Sheet

www.vishay.com

S

G

D

P-Channel MOSFET

IRF9610S, SiHF9610S

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) - 200

R

()V

DS(on)

Q

(Max.) (nC) 11

g

(nC) 7

Q

gs

Q

(nC) 4

gd

Configuration Single

= - 10 V 3

GS

FEATURES

• Surface Mount

• Available in Tape and Reel

• Dynamic dV/dt Rating

•P-Channel

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912

Note

* Lead (Pb)-containing terminations are not RoHS-compliant.

D2PAK (TO-263)

Exemptions may apply.

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.

2

The D

D

G

S

PAK (TO-263) is a surface mount power package
capable of accommodating die sizes up to HEX-4. It
provides the highest power capability and the lowest
possible on-resistance in any existing surface mount
package. The D
applications because of its low internal connection
resistance and can dissipate up to 2 W in a typical surface
mount application.

ORDERING INFORMATION

Package D2PAK (TO-263)

SiHF9610S-GE3

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

SiHF9610STRR-GE3

SiHF9610STRL-GE3

IRF9610SPbF

SiHF9610S-E3

IRF9610STRRPbF

IRF9610STRLPbF

2

PAK (TO-263) is suitable for high current

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

Linear Derating Factor 0.16

Linear Derating Factor (PCB Mount)

Maximum Power Dissipation T

Maximum Power Dissipation (PCB Mount)

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range T

Soldering Recommendations (Peak Temperature) for 10 s 300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).
b. I

 - 1.8 A, dI/dt  70 A/μs, VDD  VDS, TJ  150 °C.

SD

c. 1.6 mm from case.
d. When mounted on 1" square PCB (FR-4 or G-10 material).

S12-1558-Rev. D, 02-Jul-12

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

a

d

d

b

For technical questions, contact: [e-mail]

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

at - 10 V

GS

TA = 25 °C 3

C

= 100 °C - 1

C

= 25 °C

C

1

DS

± 20

GS

I

D

IDM - 7

P

D

dV/dt - 5 V/ns

, T

J

stg

- 200

- 1.8

0.025

20

- 55 to + 150

c

Document Number: 91081

V

AT

W/°C

W

°C

D

S

G

S

D

G

IRF9610S, SiHF9610S

www.vishay.com

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Ambient
(PCB Mount)

a

Maximum Junction-to-Case (Drain) R

thJA

R

thJA

thJC

-62

-40

-6.4

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.23 - V/°C

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

DS

GS(th)

V

GSS

DSS

VGS = - 10 V ID = - 0.90 A

DS(on)

fs

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

iss

-50-

oss

-15-

rss

g

--7

gs

--4

gd

d(on)

r

d(off)

-8-

f

D

V

-1-

Between lead,
6 mm (0.25") from
package and center of

Internal Source Inductance L

S

die contact

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

S

I

SM

SD

rr

rr

on

MOSFET symbol
showing the
integral reverse
p - n junction diode

TJ = 25 °C, IF = - 1.8 A, dI/dt = 100 A/μs

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).
b. Pulse width  300 μs; duty cycle  2 %.

VGS = 0, ID = - 250 μA - 200 - - V

VDS = VGS, ID = - 250 μA - 2 - - 4 V

= ± 20 V - - ± 100 nA

GS

VDS = - 200 V, VGS = 0 V - - - 100

V

= - 160 V, VGS = 0 V, TJ = 125 °C - - - 500

DS

b

VDS = - 50 V, ID = - 0.90 A

b

VGS = 0 V,

V

= - 25 V,

DS

f = 1 MHz, see fig. 10

= - 3.5 A, VDS = - 160 V,

I

= - 10 V

GS

V

R

= 50 , RD = 110 , see fig. 17

G

TJ = 25 °C, IS = - 1.8 A, VGS = 0 V

D

see fig. 11 and 18

= - 100 V, ID = - 0.90 A,

DD

b

b

b

b

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Vishay Siliconix

°C/W

--3

0.90 - - S

- 170 -

--11

-8-

-15-

-4.5-

-7.5-

--- 1.8

--- 7

--- 5.8V

- 240 360 ns

-1.72.6μC

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

S12-1558-Rev. D, 02-Jul-12

2

Document Number: 91081

91081_01

VDS, Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

- 10

- 2.40

- 4 V

- 6 V

- 5 V

V

GS

= - 10, - 9, - 8, - 7 V

- 1.92

- 1.44

- 0.96

- 0.48

0.00
0

- 20

- 30 - 40

- 50

80 µs Pulse Test

V

GS

,

Gate-to-Source Voltage (V)

I

D

, Drain Current (A)

80 µs Pulse Test
V

DS

> I

D(on)

x R

DS(on)

max.

91081_02

- 2

- 2.40

- 1.92

- 1.44

- 0.96

- 0.48

0.00
0 - 4 - 6 - 8 - 10

T

J

= - 55 °C

T

J

= 25 °C

T

J

= 125 °C

80 µs Pulse Test

I

D

, Drain Current (A)

V

DS

,

Drain-to-Source Voltage (V)

91081_03

- 4 V

- 6 V

- 5 V

V

GS

= - 10, - 9, - 8 V

- 7 V

- 2

- 2.40

- 1.92

- 1.44

- 0.96

- 0.48

0.00
0 - 4 - 6 - 8 - 10

100 µs

1 ms

10 ms

Operation in this area limited

by R

DS(on)

Negative VDS, Drain-to-Source Voltage (V)

Negative I

D

, Drain Current (A)

TC = 25 °C
T

J

= 150 °C

Single Pulse

10

2

2

5

0.1

1

2

5

10

2

5

25

110

25

10

2

10

3

25

91081_04

2.0

1.0

0.1

10

-5

10

-4

10

-3

10

-2

0.1 1.0 10

P

DM

t

1

t

2

t1, Square Wave Pulse Duration (s)

Z

thJC

(t)/R

thJC

, Normalized Effective Transie

Notes:

1. Duty Factor, D = t

1/t2

2. Per Unit Base = R

thJC

= 6.4 °C/W

3. T

JM

- TC = PDM Z

thJC

(t)

0.2

0.05

0.02

0.01

91081_05

0.1

D = 0.5

0.5

0.2

0.05

0.02

0.01

25 25 25 25 25 25

Thermal Impedence (Per Unit)

Single Pulse (Transient
Thermal Impedence)

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

IRF9610S, SiHF9610S

Vishay Siliconix

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Transfer Characteristics

Fig. 3 - Typical Saturation Characteristics

Fig. 4 - Maximum Safe Operating Area

Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to.Case vs. Pulse Duration

S12-1558-Rev. D, 02-Jul-12

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

3

Document Number: 91081