Vishay IRF9530S, SiHF9530S Data Sheet

IRF9530S, SiHF9530S

www.vishay.com

Vishay Siliconix

S16-0754-Rev. D, 02-May-16

1

Document Number: 91077

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Power MOSFET

FEATURES

• Surface mount

• Available in tape and reel

• Dynamic dV/dt rating

• Repetitive avalanche rated

•P-channel

• 175 °C operating temperature

• Fast switching

• Material categorization: for definitions of

compliance please see www.vishay.com/doc?99912

Note

*

Thi s datasheet pro vi des information about parts that are



RoHS-compliant and / or parts that are non-RoHS-compliant. For



example, parts with lead (Pb) terminations are not RoHS-compliant.



Please see the information / tables in this datasheet for details.

DESCRIPTION

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The D

2

PAK (TO-263) is a surface mount power package

capable of accommodating die sizes up to HEX-4. It

provides the highest power capability and the lowest

possible on-resistance in any existing surface mount

package. The D

2

PAK (TO-263) is suitable for high current

applications because of its low internal connection

resistance and can dissipate up to 2.0 W in a typical surface

mount application.

Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

DD

= -25 V, starting T

J

= 25 °C, L = 4.2 mH, R

g

= 25 , I

AS

= -12 A (see fig. 12).

c. I

SD

 - 12 A, dI/dt  140 A/μs, V

DD

 V

DS

, T

J

 175 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

PRODUCT SUMMARY

V

DS

(V) -100

R

DS(on)

()V

GS

= -10 V 0.30

Q

g

max. (nC) 38

Q

gs

(nC) 6.8

Q

gd

(nC) 21

Configuration Single

S

G

D

P-Channel MOSFET

D

2

PAK (TO-263)

G

D

S

Available

Available

ORDERING INFORMATION

Package D

2

PAK (TO-263) D

2

PAK (TO-263) D

2

PAK (TO-263)

Lead (Pb)-free and Halogen-free SiHF9530S-GE3 SiHF9530STRL-GE3

a

SiHF9530STRR-GE3

a

Lead (Pb)-free

IRF9530SPbF IRF9530STRLPbF

a

IRF9530STRRPbF

a

SiHF9530S-E3 SiHF9530STL-E3

a

SiHF9530STR-E3

a

ABSOLUTE MAXIMUM RATINGS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

DS

-100

V

Gate-Source Voltage V

GS

± 20

Continuous Drain Current V

GS

at - 10 V

T

C

= 25 °C

I

D

-12

AT

C

= 100 °C -8.2

Pulsed Drain Current

a

I

DM

-48

Linear Derating Factor 0.59

W/°C

Linear Derating Factor (PCB mount)

e

0.025

Single Pulse Avalanche Energy

b

E

AS

400 mJ

Avalanche Current

a

I

AR

-12 A

Repetitive Avalanche Energy

a

E

AR

8.8 mJ

Maximum Power Dissipation T

C

= 25 °C

P

D

88

W

Maximum Power Dissipation (PCB mount)

e

T

A

= 25 °C 3.7

Peak Diode Recovery dV/dt

c

dV/dt - 5.5 V/ns

Operating Junction and Storage Temperature Range T

J

, T

stg

-55 to +175

°C

Soldering Recommendations (Peak temperature)

d

for 10 s 300

IRF9530S, SiHF9530S

www.vishay.com

Vishay Siliconix

S16-0754-Rev. D, 02-May-16

2

Document Number: 91077

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material). 

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width  300 μs; duty cycle  2 %.

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

thJA

-62

°C/W

Maximum Junction-to-Ambient 

(PCB mount)

a

R

thJA

-40

Maximum Junction-to-Case (Drain) R

thJC

-1.7

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

DS

V

GS

= 0, I

D

= -250 μA -100 - - V

V

DS

Temperature Coefficient V

DS

/T

J

Reference to 25 °C, I

D

= -1 mA - -0.10 - V/°C

Gate-Source Threshold Voltage V

GS(th)

V

DS

= V

GS

, I

D

= -250 μA -2.0 - -4.0 V

Gate-Source Leakage I

GSS

V

GS

= ± 20 V - - ± 100 nA

Zero Gate Voltage Drain Current I

DSS

V

DS

= -100 V, V

GS

= 0 V - - -100

μA

V

DS

= -80 V, V

GS

= 0 V, T

J

= 150 °C - - -500

Drain-Source On-State Resistance R

DS(on)

V

GS

= -10 V I

D

= -7.2 A

b

- - 0.30 

Forward Transconductance g

fs

V

DS

= -50 V, I

D

= -7.2 A

b

3.7 - - S

Dynamic

Input Capacitance C

iss

V

GS

= 0 V,

V

DS

= -25 V,

f = 1.0 MHz, see fig. 5

- 860 -

pFOutput Capacitance C

oss

- 340 -

Reverse Transfer Capacitance C

rss

-93-

Total Gate Charge Q

g

V

GS

= -10 V

I

D

= -12 A, V

DS

= -80 V,

see fig. 6 and 13

b

--38

nC Gate-Source Charge Q

gs

--6.8

Gate-Drain Charge Q

gd

--21

Turn-On Delay Time t

d(on)

V

DD

= -50 V, I

D

= -12 A,

R

G

= 12 , R

D

= 3.9 , see fig. 10

b

-12-

ns

Rise Time t

r

-52-

Turn-Off Delay Time t

d(off)

-31-

Fall Time t

f

-39-

Internal Drain Inductance L

D

Between lead,

6 mm (0.25") from

package and center of

die contact

-4.5-

nH

Internal Source Inductance L

S

-7.5-

Gate Input Resistance R

g

f = 1 MHz, open drain 0.4 - 3.3 

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

S

MOSFET symbol

showing the 

integral reverse

p -n junction diode

---12

A

Pulsed Diode Forward Current

a

I

SM

---48

Body Diode Voltage V

SD

T

J

= 25 °C, I

S

= -12 A, V

GS

= 0 V

b

---6.3V

Body Diode Reverse Recovery Time t

rr

T

J

= 25 °C, I

F

= -12 A, dI/dt = 100 A/μs

b

- 120 240 ns

Body Diode Reverse Recovery Charge Q

rr

-0.460.92μC

Forward Turn-On Time t

on

Intrinsic turn-on time is negligible (turn-on is dominated by L

S

and L

D

)

D

S

G

S

D

G

IRF9530S, SiHF9530S

www.vishay.com

Vishay Siliconix

S16-0754-Rev. D, 02-May-16

3

Document Number: 91077

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics, T

C

= 25 °C

Fig. 2 - Typical Output Characteristics, T

C

= 175 °C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

91077_01

Bottom

To p

V

GS

- 15 V

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

- 4.5 V

20 µs Pulse Width

T

C

= 25 °C

- 4.5 V

- V

DS

, Drain-to-Source Voltage (V)

- I

D

, Drain Current (A)

10

0

10

1

10

1

10

0

10

-1

10

1

10

0

10

0

10

1

- V

DS

,

Drain-to-Source Voltage (V)

- I

D

, Drain Current (A)

Bottom

To p

V

GS

- 15 V

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

- 4.5 V

20 µs Pulse Width

T

C

= 175 °C

91077_02

- 4.5 V

10

-1

20 µs Pulse Width

V

DS

= - 50 V

10

1

10

0

- I

D

, Drain Current (A)

- V

GS

,

Gate-to-Source Voltage (V)

5678910

4

25 °C

175 °C

91077_03

I

D

= - 12 A

V

GS

= - 10 V

3.0

0.0

0.5

1.0

1.5

2.0

2.5

T

J

,

Junction Temperature (°C)

R

DS(on)

, Drain-to-Source On Resistance

(Normalized)

91077_04

- 60- 40 - 20 0 20 40 60 80 100 120 140 160 180

1800

1500

1200

900

0

300

600

10

0

10

1

Capacitance (pF)

- V

DS

,

Drain-to-Source Voltage (V)

C

iss

C

rss

C

oss

V

GS

= 0 V, f = 1 MHz

C

iss

= C

gs

+ C

gd

, C

ds

Shorted

C

rss

= C

gd

C

oss

= C

ds

+ C

gd

91077_05

Q

G

, Total Gate Charge (nC)

- V

GS

, Gate-to-Source Voltage (V)

20

16

12

8

0

4

0

10

50

40

3020

V

DS

= - 20 V

V

DS

= - 50 V

For test circuit

see figure 13

V

DS

= - 80 V

91077_06

I

D

= - 12 A