Vishay IRF9530S, SiHF9530S Data Sheet

www.vishay.com

S

G

D

P-Channel MOSFET

Available

Available

IRF9530S, SiHF9530S

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) -100

R

()V

DS(on)

Q

max. (nC) 38

g

Q

(nC) 6.8

gs

Q

(nC) 21

gd

Configuration Single

= -10 V 0.30

GS

FEATURES

• Surface mount

• Available in tape and reel

• Dynamic dV/dt rating

• Repetitive avalanche rated

•P-channel

• 175 °C operating temperature

• Fast switching

• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912

Note

*

D2PAK (TO-263)

Thi s datasheet pro vi des information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.

DESCRIPTION

Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,

D

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ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK (TO-263) is a surface mount power package
capable of accommodating die sizes up to HEX-4. It
provides the highest power capability and the lowest
possible on-resistance in any existing surface mount
package. The D2PAK (TO-263) is suitable for high current
applications because of its low internal connection
resistance and can dissipate up to 2.0 W in a typical surface
mount application.

ORDERING INFORMATION

Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHF9530S-GE3 SiHF9530STRL-GE3

Lead (Pb)-free

IRF9530SPbF IRF9530STRLPbF
SiHF9530S-E3 SiHF9530STL-E3

Note

a. See device orientation.

a

SiHF9530STRR-GE3 a

a

IRF9530STRRPbF a

a

SiHF9530STR-E3

a

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

a

at - 10 V

GS

C

= 100 °C -8.2

C

DS

± 20

GS

I

D

IDM -48
Linear Derating Factor 0.59
Linear Derating Factor (PCB mount)
Single Pulse Avalanche Energy
Avalanche Current

a

Repetitive Avalanche Energy
Maximum Power Dissipation T
Maximum Power Dissipation (PCB mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak temperature)

e

b

a

= 25 °C

e

c

d

C

TA = 25 °C 3.7

for 10 s 300

E

AS

I

AR

E

AR

P

D

dV/dt - 5.5 V/ns

, T

J

stg

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= -25 V, starting TJ = 25 °C, L = 4.2 mH, Rg = 25 , IAS = -12 A (see fig. 12).

DD

c. ISD  - 12 A, dI/dt  140 A/μs, VDD  VDS, TJ  175 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).

S16-0754-Rev. D, 02-May-16

1

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

-100

-12

0.025
400 mJ

-12 A

8.8 mJ

88

-55 to +175

Document Number: 91077





V

AT

W/°C

W

°C

IRF9530S, SiHF9530S

D

S

G

S

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G

www.vishay.com

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Ambient 
(PCB mount)

a

Maximum Junction-to-Case (Drain) R

thJA

R

thJA

thJC

-62

-40

-1.7

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material). 

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = -1 mA - -0.10 - V/°C

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

DS

GS(th)

V

GSS

DSS

VGS = -10 V ID = -7.2 A

DS(on)

fs

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

iss

- 340 -

oss

-93-

rss

g

--6.8

gs

--21

gd

d(on)

r

d(off)

-39-

f

D

V

-31-

Between lead,
6 mm (0.25") from
package and center of

Internal Source Inductance L

Gate Input Resistance R

S

g

die contact

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

S

I

SM

SD

rr

rr

on

MOSFET symbol
showing the 
integral reverse
p -n junction diode

TJ = 25 °C, IF = -12 A, dI/dt = 100 A/μs

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.

VGS = 0, ID = -250 μA -100 - - V

VDS = VGS, ID = -250 μA -2.0 - -4.0 V

= ± 20 V - - ± 100 nA

GS

VDS = -100 V, VGS = 0 V - - -100

= -80 V, VGS = 0 V, TJ = 150 °C - - -500

V

DS

VDS = -50 V, ID = -7.2 A

b

b

VGS = 0 V,

V

= -25 V,

DS

f = 1.0 MHz, see fig. 5

= -12 A, VDS = -80 V,

I

= -10 V

GS

V

R

= 12 , RD = 3.9 , see fig. 10

G

D

see fig. 6 and 13

= -50 V, ID = -12 A,

DD

b

b

f = 1 MHz, open drain 0.4 - 3.3 

TJ = 25 °C, IS = -12 A, VGS = 0 V

b

b

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Vishay Siliconix

°C/W

- - 0.30 

3.7 - - S

- 860 -

--38

-12-

-52-

-4.5-

-7.5-

---12

---48

---6.3V

- 120 240 ns

-0.460.92μC

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

S16-0754-Rev. D, 02-May-16

2

Document Number: 91077

www.vishay.com

10

1

10

0

10

0

10

1

- V

DS

,

Drain-to-Source Voltage (V)

- I

D

, Drain Current (A)

Bottom

To p

V

GS

- 15 V

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

- 4.5 V

20 µs Pulse Width
T

C

= 175 °C

91077_02

- 4.5 V

10

-1

I

D

= - 12 A

V

GS

= - 10 V

3.0

0.0

0.5

1.0

1.5

2.0

2.5

T

J

,

Junction Temperature (°C)

R

DS(on)

, Drain-to-Source On Resistance

(Normalized)

91077_04

- 60- 40 - 20 0 20 40 60 80 100 120 140 160 180

1800

1500

1200

900

0

300

600

10

0

10

1

Capacitance (pF)

- V

DS

,

Drain-to-Source Voltage (V)

C

iss

C

rss

C

oss

V

GS

= 0 V, f = 1 MHz

C

iss

= Cgs + Cgd, Cds Shorted

C

rss

= C

gd

C

oss

= Cds + C

gd

91077_05

QG, Total Gate Charge (nC)

- V

GS

, Gate-to-Source Voltage (V)

20

16

12

8

0

4

0

10

50

40

3020

V

DS

= - 20 V

V

DS

= - 50 V

For test circuit
see figure 13

V

DS

= - 80 V

91077_06

ID = - 12 A

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

V

GS

- 15 V

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

- 4.5 V

- 4.5 V

20 µs Pulse Width

= 25 °C

T

C

0

10

1

10

- VDS, Drain-to-Source Voltage (V)

1

10

, Drain Current (A)

D

- I

0

10

10

91077_01

To p

Bottom

-1

IRF9530S, SiHF9530S

Vishay Siliconix

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, T

25 °C

1

10

175 °C

= 175 °C

C

Fig. 4 - Normalized On-Resistance vs. Temperature

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

, Drain Current (A)

D

- I

91077_03

S16-0754-Rev. D, 02-May-16

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

0

4

5678910

- V

GS

10

Gate-to-Source Voltage (V)

,

20 µs Pulse Width
V

= - 50 V

DS

Fig. 3 - Typical Transfer Characteristics

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

3

Document Number: 91077