Vishay IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Data Sheet

N-Channel MOSFET

G

D

S

D2PAK (TO-263)

G

D

S

I2PAK (TO-262)

G

D

S

IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) 500

()V

R

DS(on)

Q

(Max.) (nC) 39

g

Q

(nC) 10

gs

Q

(nC) 19

gd

Configuration Single

= 10 V 0.85

GS

FEATURES

• Halogen-free According to IEC 61249-2-21
Definition

• Ultra Low Gate Charge

• Reduced Gate Drive Requirement

• Enhanced 30 V VGS Rating

• Reduced C

• Extremely High Frequency Operation

• Repetitive Avalanche Rated

• Compliant to RoHS Directive 2002/95/EC

iss

, C

oss

, C

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DESCRIPTION

This new series of low charge Power MOSFETs achieve
significantly lower gate charge then conventional Power
MOSFETs. Utilizing the new LCDMOS (low charge device
Power MOSFETs) technology, the device improvements are
achieved without added product cost, allowing for reduced
gate drive requirements and total system savings. In
addition, reduced switching losses and improved efficiency
are achievable in a variety of high frequency applications.
Frequencies of a few MHz at high current are possible using
the new low charge Power MOSFETs.
These device improvements combined with the proven
ruggedness and reliability that characterize Power
MOSFETs offer the designer a new power transistor
standard for switching applications.

ORDERING INFORMATION

Package D2PAK (TO-263) I2PAK (TO-262)
Lead (Pb)-free and Halogen-free SiHF840LCS-GE3 SiHF840LCL-GE3

Lead (Pb)-free

Note

a. See device orientation.

IRF840LCSPbF IRF840LCLPbF
SiHF840LCS-E3 SiHF840LCL-E3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate-Source Voltage V

= 25 °C

T

Continuous Drain Current V

Pulsed Drain Current

a, e

at 10 V

GS

C

T

= 100 °C 5.1

C

DS

± 30

GS

I

D

IDM 28

Linear Derating Factor 1.0 W/°C

c, e

b, e

a

= 25 °C

T

C

T

= 25 °C 3.1

A

Single Pulse Avalanche Energy
Avalanche Current

a

Repetiitive Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T

E

AS

I

AR

E

AR

P

D

dV/dt 3.5 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I

SD

d. 1.6 mm from case.
e. Uses IRF840LC, SiHF840LC data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91068
S11-1050-Rev. C, 30-May-11 1

= 25 °C, L = 14 mH, Rg = 25 , IAS = 8.0 A (see fig. 12).

J

 8.0 A, dI/dt  100 A/μs, VDD  VDS, TJ  150 °C.

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This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

500

8.0

510 mJ

8.0 A
13 mJ

125

- 55 to + 150

d

www.vishay.com/doc?91000

V

A

W

°C

IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient
(PCB Mounted, Steady-State)

a

Maximum Junction-to-Case (Drain) R

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. Uses SiHF840LC data and test conditions.

a

R

thJA

thJC

DS

GS(th)

V

GSS

-40
°C/W

-1.0

VGS = 0, ID = 250 μA 500 - - V

c

-0.63-V/°C

VDS = VGS, ID = 250 μA 2.0 - 4.0 V

= ± 20 V - - ± 100 nA

GS

VDS = 500 V, VGS = 0 V - - 25

DSS

VGS = 10 V ID = 4.8 A

DS(on)

fs

iss

- 170 -

oss

-18-

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g

--10

gs

--19

gd

d(on)

r

-27-

d(off)

-19-

f

S

I

SM

SD

rr

rr

on

V

= 400 V, VGS = 0 V, TJ = 125 °C - - 250

DS

VDS = 50 V, ID = 4.8 A

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

b

b

c

- - 0.85 

4.0 - - S

- 1100 -

--39

= 8.0 A, VDS = 400 V,

I

V

GS

= 10 V

D

see fig. 6 and 13

b, c

-12-

V

= 250 V, ID = 8.0 A,

DD

R

= 9.1 , RD = 30 , see fig. 10

g

b, c

MOSFET symbol
showing the
integral reverse
p - n junction diode

TJ = 25 °C, IS = 8.0 A, VGS = 0 V

G

b

TJ = 25 °C, IF = 8.0 A, dI/dt = 100 A/μs

D

S

-25-

--8.0

--28

--2.0V

- 490 740 ns

b, c

-3.04.5μC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

A

www.vishay.com Document Number: 91068
2 S11-1050-Rev. C, 30-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

91068_01

Bottom

To p

V

GS

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width
T

C

= 25 °C

4.5 V

VDS, Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

10

0

10

1

10

1

10

0

10

-1

10

-1

10

1

10

0

10

-1

10

0

10

1

V

DS

,

Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

Bottom

To p

V

GS

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width
T

C

= 150 °C

91068_02

4.5 V

10

-1

20 µs Pulse Width
V

DS

= 50 V

10

1

10

0

I

D

, Drain Current (A)

V

GS

,

Gate-to-Source Voltage (V)

5678910

4

25 °C

150 °C

91068_03

IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Vishay Siliconix

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

3.0
I

= 8.0 A

D

= 10 V

V

GS

2.5

2.0

1.5

(Normalized)

1.0

, Drain-to-Source On Resistance

0.5

DS(on)

0.0

R

91068_04

- 60 - 40 - 20 0 20 40 60 80

T

Junction Temperature (°C)

,

J

120 140 160

100

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91068 www.vishay.com
S11-1050-Rev. C, 30-May-11 3

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This document is subject to change without notice.

www.vishay.com/doc?91000