Vishay IRF840LC, SiHF840LC Data Sheet

TO-220AB

G

D

S

Available

RoHS*

COMPLIANT

Power MOSFET

IRF840LC, SiHF840LC

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 500

(Ω)V

R

DS(on)

Q

(Max.) (nC) 39

g

Q

(nC) 10

gs

Q

(nC) 19

gd

= 10 V 0.85

GS

FEATURES

• Ultra Low Gate Charge

• Reduced Gate Drive Requirement

• Enhanced 30 V V

• Reduced C

• Extremely High Frequency Operation

• Repetitive Avalanche Rated

• Compliant to RoHS Directive 2002/95/EC

Configuration Single

D

DESCRIPTION

This new series of low charge Power MOSFETs achieve
signiticantly lower gate charge over conventional MOSFETs.
Utilizing the new LCDMOS technology, the device
improvements are achieved without added product cost,

G

allowing for reduced gate drive requirements and total
system savings. In addition, reduced switching losses and
improved efficiency are achievable in a variety of high
frequency applications. Frequencies of a few MHz at high

S

N-Channel MOSFET

current are possible using the new low charge MOSFETs.
These device improvements combined with the proven

ruggedness and reliability that are characteristic of Power
MOSFETs offer the designer a new standard in power
transistors for switching applications.

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free

SnPb

IRF840LCPbF
SiHF840LC-E3
IRF840LC
SiHF840LC

iss

, C

GS

oss

Rating

, C

rss

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate-Source Voltage V

= 25 °C

T

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

C

T

= 100 °C 5.1

C

DS

± 30

GS

I

D

IDM 28
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt

b

a

a

= 25 °C P

c

C

Operating Junction and Storage Temperature Range T

E

AS

I

AR

E

AR

D

dV/dt 3.5 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= 50 V, starting TJ = 25 °C, L = 14 mH, Rg = 25 Ω, IAS = 8.0 A (see fig. 12).

DD

c. I

≤ 8.0 A, dI/dt ≤ 100 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.

SD

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91067 www.vishay.com
S11-0506-Rev. B, 21-Mar-11 1

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

500

8.0

510 mJ

8.0 A
13 mJ

125 W

- 55 to + 150

d

10 lbf · in

1.1 N · m

www.vishay.com/doc?91000

V

A

°C

IRF840LC, SiHF840LC

Vishay Siliconix

THERMAL RESISTANCE

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

-62

0.50 -

-1.0

°C/WCase-to-Sink, Flat, Greased Surface R

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient

V

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

DS

ΔV

DS/TJ

GS(th)

V

GSS

DSS

V

DS(on)

fs

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

iss

-170-

oss

-18-

rss

g

--10

gs

--19

gd

d(on)

r

-27-

d(off)

-19-

f

D

Between lead,
6 mm (0.25") from
package and center of

Internal Source Inductance L

S

die contact

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

S

I

SM

SD

rr

rr

on

MOSFET symbol
showing the
integral reverse
p - n junction diode

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.

VGS = 0 V, ID = 250 μA 500 - - V

Reference to 25 °C, I

= 1 mA

D

-0.63-

VDS = VGS, ID = 250 μA 2.0 - 4.0 V

= ± 20 V - - ± 100 nA

GS

VDS = 500 V, VGS = 0 V - - 25

V

= 400V, VGS = 0 V, TJ = 125 °C - - 250

DS

= 10 V ID = 4.8 A

GS

VDS = 50 V, ID = 4.8 A

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

b

b

- - 0.85 Ω

4.0 - - S

-1100-

--39

= 8.0 A, VDS = 400 V

I

V

GS

= 10 V

D

see fig. 6 and 13

b

-12-

= 250 V, ID = 8.0 A,

V

DD

R

= 9.1 Ω, RD= 30 Ω

g

see fig. 10

b

G

G

TJ = 25 °C, IS = 8.0 A, VGS = 0 V

TJ = 25 °C, IF = 8.0 A,

dI/dt = 100 A/μs

b

D

S

D

S

b

-25-

-4.5-

-7.5-

--8.0

--28

--2.0V

- 490 740 ns

-3.04.5μC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

V/°C

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

www.vishay.com Document Number: 91067
2 S11-0506-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

91067_01

Bottom

To p

V

GS

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width
T

C

= 25 °C

4.5 V

VDS, Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

10

0

10

1

10

1

10

0

10

-1

10

-1

10

1

10

0

10

-1

10

0

10

1

V

DS

,

Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

Bottom

To p

V

GS

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width
T

C

= 150 °C

91067_02

4.5 V

10

-1

I

D

= 8.0 A

V

GS

= 10 V

3.0

0.0

0.5

1.0

1.5

2.0

2.5

T

J

,

Junction Temperature (°C)

R

DS(on)

, Drain-to-Source On Resistance

(Normalized)

91067_04

- 60 - 40 - 20 0 20 40 60 80

100

120 140 160

IRF840LC, SiHF840LC

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics, TC = 25 °C

1

10

0

, Drain Current (A)

10

D

I

4

91067_03

Fig. 3 - Typical Transfer Characteristics

Vishay Siliconix

150 °C

25 °C

20 µs Pulse Width
V

= 50 V

DS

5678910

V

Gate-to-Source Voltage (V)

,

GS

Document Number: 91067 www.vishay.com
S11-0506-Rev. B, 21-Mar-11 3

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 2 - Typical Output Characteristics, T

This datasheet is subject to change without notice.

= 150 °C

C

Fig. 4 - Normalized On-Resistance vs. Temperature

www.vishay.com/doc?91000