Vishay IRF840B Data Sheet

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N-Channel MOSFET

G

D

S

TO-220AB

G

D

S

IRF840B

Vishay Siliconix

D Series Power MOSFET

PRODUCT SUMMARY

VDS (V) at TJ max. 550

R

max. at 25 °C ()VGS = 10 V 0.85

DS(on)

Q

(max.) (nC) 30

g

Q

(nC) 4

gs

Q

(nC) 7

gd

Configuration Single

FEATURES

•Optimal Design

- Low Area Specific On-Resistance

- Low Input Capacitance (C

iss

)

- Reduced Capacitive Switching Losses

- High Body Diode Ruggedness

- Avalanche Energy Rated (UIS)

• Optimal Efficiency and Operation

- Low Cost

- Simple Gate Drive Circuitry

- Low Figure-of-Merit (FOM): R

on

x Q

g

- Fast Switching

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

Note

* Lead (Pb)-containing terminations are not RoHS-compliant.

Exemptions may apply.

APPLICATIONS

• Consumer Electronics

- Displays (LCD or Plasma TV)

• Server and Telecom Power Supplies

- SMPS

• Industrial

- Welding

- Induction Heating

- Motor Drives

• Battery Chargers

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free IRF840BPbF

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage AC (f > 1 Hz) 30

T

= 25 °C

Continuous Drain Current (T

Pulsed Drain Current

Linear Derating Factor 1.25 W/°C

Single Pulse Avalanche Energy

Maximum Power Dissipation P

Operating Junction and Storage Temperature Range T

Drain-Source Voltage Slope T

Reverse Diode dV/dt

Soldering Recommendations (Peak Temperature)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.
b. V

= 50 V, starting TJ = 25 °C, L = 2.3 mH, Rg = 25 , IAS = 5 A.

DD

c. 1.6 mm from case.
d. I

 ID, starting TJ = 25 °C.

SD

S12-1375-Rev. A, 18-Jun-12

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

= 150 °C) VGS at 10 V

J

a

b

d

c

For technical questions, contact: [e-mail]

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

C

= 100 °C 5.5

C

= 125 °C

J

for 10 s 300 °C

1

DS

V

GS

I

D

IDM 18

E

AS

D

, T

J

stg

dV/dt

500

± 30

8.7

29 mJ

156 W

- 55 to + 150 °C

24

0.37

Document Number: 91521

V Gate-Source Voltage

AT

V/ns

S

D

G

IRF840B

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THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thJC

-62

-0.8

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 250 μA - 0.58 - V/°C

DS

Gate-Source Threshold Voltage (N) V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance

a

DS

GS(th)

V

GSS

DSS

VGS = 10 V ID = 4 A - 0.70 0.85 

DS(on)

g

fs

Dynamic

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Effective Output Capacitance, Energy

b

Related

Effective Output Capacitance, Time

c

Related

Total Gate Charge Q

iss

-52-

oss

-8-

rss

C

o(er)

C

o(tr)

g

V

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Gate Input Resistance R

-7-

gd

d(on)

r

-1734

d(off)

-1122

f

f = 1 MHz, open drain - 1.8 - 

g

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current I

Diode Forward Voltage V

Reverse Recovery Time t

Reverse Recovery Charge Q

Reverse Recovery Current I

S

SM

SD

rr

rr

RRM

MOSFET symbol
showing the

integral reverse
p - n junction diode

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.
b. C
c. C

is a fixed capacitance that gives the same energy as C

oss(er)

is a fixed capacitance that gives the same charging time as C

oss(tr)

VGS = 0 V, ID = 250 μA 500 - - V

VDS = VGS, ID = 250 μA 3 - 5 V

= ± 30 V - - ± 100 nA

GS

VDS = 500 V, VGS = 0 V - - 1

= 400 V, VGS = 0 V, TJ = 125 °C - - 10

V

DS

VDS = 20 V, ID = 4 A - 3 - S

VGS = 0 V,

V

= 100 V,

DS

f = 1 MHz

= 0 V to 400 V, VGS = 0 V

V

DS

= 10 V ID = 4 A, VDS = 400 V

GS

= 400 V, ID = 4 A

V

DD

R

= 9.1 , V

g

GS

= 10 V

TJ = 25 °C, IS = 4 A, VGS = 0 V - - 1.2 V

TJ = 25 °C, IF = IS = 4 A,

dI/dt = 100 A/μs, V

while VDS is rising from 0 % to 80 % V

oss

oss

while V

= 20 V

R

is rising from 0 % to 80 % V

DS

Vishay Siliconix

°C/W

- 527 -

-46-

-64-

-1530

-1326

-1632

--8

--32

- 308 - ns

-1.8-μC

-11-A

.

DSS

DSS

.

μA

pF

nC Gate-Source Charge Qgs -4-

ns

A

S12-1375-Rev. A, 18-Jun-12

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

2

Document Number: 91521

VDS, Drain-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

0 5 10 15 20 25 30

0

4

8

12

16

20

TOP 15 V

14 V
13 V
12 V
11 V
10 V

9.0 V

8.0 V

7.0 V

6.0 V

TJ = 25 °C

VDS, Drain-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

0 5 10 15 20 25 30

0

3

6

9

12

15

TOP 15 V

14 V
13 V
12 V
11 V
10 V

9.0 V

8.0 V

7.0 V

6.0 V

5.0 V

TJ = 150 °C

VGS, Gate-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

0

4

8

12

16

20

0 5 10 15 20

25

TJ = 25 °C

TJ = 150 °C

TJ, Junction Temperature (°C)

R

DS(on)

, Drain-to-Source

- 60 - 40 - 20020 40 60 80 100 120

140

160

On Resistance (Normalized)

0

0.5

1

1.5

2

2.5

3

VGS = 10 V

ID = 4 A

VDS, Drain-to-Source Voltage (V)

Capacitance (pF)

C

rss

1

10

100

1000

0 100 200 300 400 500

C

iss

C

oss

V

GS

= 0 V, f = 1 MHz

C

iss

= Cgs + Cgd, Cds Shorted

C

rss

= C

gd

C

oss

= Cds + C

gd

0 5 10 15 20 25

Qg, Total Gate Charge (nC)

V

GS

, Gate-to-Source Voltage (V)

16

4

0

24

20

12

8

VDS = 400 V
V

DS

= 250 V

V

DS

= 100 V

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

IRF840B

Vishay Siliconix

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 3 - Typical Transfer Characteristics

S12-1375-Rev. A, 18-Jun-12

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

3

For technical questions, contact: [e-mail]

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Document Number: 91521