Vishay IRF840AS, SiHF840AS, IRF840AL, SiHF840AL Data Sheet

N-Channel MOSFET

G

D

S

D2PAK (TO-263)

G

D

S

I2PAK (TO-262)

G

D

S

IRF840AS, SiHF840AS, IRF840AL, SiHF840AL

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) 500

R

()V

DS(on)

Q

(Max.) (nC) 38

g

Q

(nC) 9.0

gs

Q

(nC) 18

gd

Configuration Single

= 10 V 0.85

GS

FEATURES

• Halogen-free According to IEC 61249-2-21
Definition

• Low Gate Charge Q
Requirement

• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness

• Fully Characterized Capacitance and
Avalanche Voltage and Current

• Effective C

Specified

oss

Results in Simple Drive

g

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High Speed Power Switching

TYPICAL SMPS TOPOLOGIES

• Two Transistor Forward

•Half Bridge

• Full Bridge

ORDERING INFORMATION

Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262)

Lead (Pb)-free and Halogen-free SiHF840AS-GE3 SiHF840ASTRL-GE3

Lead (Pb)-free

IRF840ASPbF IRF840ASTRLPbF

SiHF840AS-E3 SiHF840ASTL-E3

a

SiHF840ASTRR-GE3aSiHF840AL-GE3

a

IRF840ASTRRPbF

a

SiHF840ASTR-E3

a

a

IRF840ALPbF

SiHF840AL-E3

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

= 25 °C

T

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

C

= 100 °C 5.1

C

DS

± 30

GS

I

D

IDM 32

Linear Derating Factor 1.0 W/°C

c, e

b

a

a

T

= 25 °C

C

T

= 25 °C 3.1

A

E

AS

I

AR

E

AR

P

D

dV/dt 5.0 V/ns

, T

J

stg

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range T

Soldering Temperature for 10 s 300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I

SD

d. 1.6 mm from case.
e. Uses IRF840A, SiH840A data and test conditions.

= 25 °C, L = 16 mH, Rg = 25 , IAS = 8.0 A (see fig. 12).

J

 8.0 A, dI/dt  100 A/μs, VDD  VDS, TJ  150 °C.

500

8.0

510 mJ

8.0 A

13 mJ

125

- 55 to + 150

d

a

V

AT

W

°C

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91066
S11-1050-Rev. D, 30-May-11 1

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

S

D

G

IRF840AS, SiHF840AS, IRF840AL, SiHF840AL

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT

Maximum Junction-to-Ambient
(PCB Mount)

a

Maximum Junction-to-Case (Drain) R

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mAd -0.58-V/°C

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Output Capacitance C

Output Capacitance C

Effective Output Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. C

eff. is a fixed capacitance that gives the same charging time as C

oss

d. Uses IRF840A, SiHF840A data and test conditions

www.vishay.com Document Number: 91066
2 S11-1050-Rev. D, 30-May-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

a

R

thJA

thJC

DS

GS(th)

V

GSS

--40

--1.0

VGS = 0, ID = 250 μA 500 - - V

VDS = VGS, ID = 250 μA 2.0 - 4.0 V

= ± 30 V - - ± 100 nA

GS

VDS = 500 V, VGS = 0 V - - 25

DSS

VGS = 10 V ID = 4.8 A

DS(on)

fs

iss

- 155 -

oss

-8.0-

rss

oss

V

oss

eff. VDS = 0 V to 480 V

oss

g

--9.0

gs

--18

gd

d(on)

r

-26-

d(off)

-19-

f

S

I

SM

SD

rr

rr

on

V

= 400 V, VGS = 0 V, TJ = 125 °C - - 250

DS

b

- - 0.85 

VDS = 50 V, ID = 4.8 A 3.7 - - S

- 1018 -

56

f = 1.0 MHz, see fig. 5

V

= 0 V

GS

VGS = 0 V,

V

= 25 V,

DS

= 1.0 V, f = 1.0 MHz 1490

V

DS

= 400 V, f = 1.0 MHz 42

DS

c, d

--38

= 8.0 A, VDS = 400 V,

I

V

GS

= 10 V

D

see fig. 6 and 13

b, d

-11-

V

= 250 V, ID = 8.0 A,

DD

R

= 9.1 , RD = 31 , see fig. 10

g

b, d

MOSFET symbol
showing the
integral reverse
p - n junction diode

TJ = 25 °C, IS = 8.0 A, VGS = 0 V

b

TJ = 25 °C, IF = 8.0 A, dI/dt = 100 A/μs

-23-

--8.0

--32

--2.0V

- 422 633 ns

b

-2.03.0μC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

while VDS is rising from 0 %to 80 % VDS.

oss

This document is subject to change without notice.

www.vishay.com/doc?91000

°C/W

μA

pF

nC Gate-Source Charge Q

ns

A

10

2

10

1

91066_01

Bottom

To p

V

GS

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width
T

J

= 25 °C

4.5 V

VDS, Drain-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

10

2

10

1

0.1

0.1

10

2

10

1

0.1

10

2

10

1

0.1

91066_02

Bottom

To p

V

GS

15 V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width
T

J

= 150 °C

4.5 V

VDS, Drain-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

10

2

10

1

0.1

91066_03

TJ = 25 °C

20 µs Pulse Width
V

DS

= 50 V

I

D

, Drain-to-Source Current (A)

V

GS

,

Gate-to-Source Voltage (V)

4.0 5.0

6.0 7.0 8.0 9.0

TJ = 150 °C

IRF840AS, SiHF840AS, IRF840AL, SiHF840AL

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Vishay Siliconix

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

3.0
I

= 8.0 A

D

= 10 V

V

GS

2.5

2.0

1.5

(Normalized)

1.0

0.5

, Drain-to-Source On Resistance

DS(on)

0.0

R

91066_04

- 60 - 40 - 20 0 20

T

Junction Temperature (°C)

,

J

80 100 120 140 160

40 60

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91066 www.vishay.com
S11-1050-Rev. D, 30-May-11 3

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This document is subject to change without notice.

www.vishay.com/doc?91000